ATE402490T1 - Fototransistor - Google Patents

Fototransistor

Info

Publication number
ATE402490T1
ATE402490T1 AT05702742T AT05702742T ATE402490T1 AT E402490 T1 ATE402490 T1 AT E402490T1 AT 05702742 T AT05702742 T AT 05702742T AT 05702742 T AT05702742 T AT 05702742T AT E402490 T1 ATE402490 T1 AT E402490T1
Authority
AT
Austria
Prior art keywords
barrier
active region
gate
holes
spaced
Prior art date
Application number
AT05702742T
Other languages
English (en)
Inventor
John M Shannon
Stanley D Brotherton
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE402490T1 publication Critical patent/ATE402490T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
AT05702742T 2004-01-24 2005-01-21 Fototransistor ATE402490T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0401578.0A GB0401578D0 (en) 2004-01-24 2004-01-24 Phototransistor

Publications (1)

Publication Number Publication Date
ATE402490T1 true ATE402490T1 (de) 2008-08-15

Family

ID=31971405

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05702742T ATE402490T1 (de) 2004-01-24 2005-01-21 Fototransistor

Country Status (9)

Country Link
US (2) US7723667B2 (de)
EP (1) EP1711968B1 (de)
JP (1) JP4702720B2 (de)
KR (1) KR101116412B1 (de)
CN (1) CN100505332C (de)
AT (1) ATE402490T1 (de)
DE (1) DE602005008376D1 (de)
GB (1) GB0401578D0 (de)
WO (1) WO2005071758A2 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
GB2437768A (en) * 2006-05-03 2007-11-07 Seiko Epson Corp Photosensing TFT
CN101558348B (zh) 2006-09-29 2013-03-06 佛罗里达大学研究基金公司 用于红外检测和显示的方法和设备
CA2680043A1 (en) 2007-03-05 2008-09-12 Arokia Nathan Sensor pixels, arrays and array systems and methods therefor
RU2509392C2 (ru) * 2008-08-01 2014-03-10 Тел Солар Аг Способ изготовления структуры фотоэлектрического элемента
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
WO2011050336A2 (en) * 2009-10-22 2011-04-28 Sionyx, Inc. Semiconductor devices having an enhanced absorption region and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
CN102906886B (zh) 2010-05-24 2016-11-23 佛罗里达大学研究基金会公司 用于在红外上转换装置上提供电荷阻挡层的方法和设备
EP2583312A2 (de) 2010-06-18 2013-04-24 Sionyx, Inc. Lichtempfindliche hochgeschwindigkeitsvorrichtungen und verfahren dafür
KR101829777B1 (ko) * 2011-03-09 2018-02-20 삼성디스플레이 주식회사 광 감지 센서
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
KR102059208B1 (ko) 2011-06-30 2020-02-07 유니버시티 오브 플로리다 리서치 파운데이션, 인코포레이티드 이득을 갖는 적외선을 검출하는 방법 및 장치
EP2732402A2 (de) 2011-07-13 2014-05-21 Sionyx, Inc. Biometrische bildgebungsvorrichtungen und entsprechende verfahren
KR101539671B1 (ko) 2011-11-21 2015-07-27 삼성전자주식회사 복합 투명 전극을 포함하는 그래핀 기반 포토 디텍터와 그 제조방법 및 포토 디텍터를 포함하는 장치
KR101955336B1 (ko) 2012-03-13 2019-03-07 삼성전자주식회사 광 센싱 트랜지스터, 이의 제조방법 및 이를 채용한 디스플레이 패널
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
KR20150130303A (ko) 2013-02-15 2015-11-23 사이오닉스, 아이엔씨. 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
WO2014209421A1 (en) 2013-06-29 2014-12-31 Sionyx, Inc. Shallow trench textured regions and associated methods
KR102114343B1 (ko) * 2013-11-06 2020-05-22 삼성전자주식회사 센싱 픽셀 및 이를 포함하는 이미지 센서
US10276816B2 (en) * 2014-12-11 2019-04-30 International Business Machines Corporation Illumination sensitive current control device
US10192892B2 (en) 2015-05-29 2019-01-29 Palo Alto Research Center Incorporated Active matrix backplane formed using thin film optocouplers
US9946135B2 (en) 2015-05-29 2018-04-17 Palo Alto Research Center Incorporated High voltage thin film optical switch
WO2017039774A2 (en) 2015-06-11 2017-03-09 University Of Florida Research Foundation, Incorporated Monodisperse, ir-absorbing nanoparticles and related methods and devices
KR102441586B1 (ko) * 2015-06-17 2022-09-07 삼성전자주식회사 광전자소자
US10397529B2 (en) 2017-04-28 2019-08-27 Palo Alto Research Center Incorporated Transparent optical coupler active matrix array
GB201819570D0 (en) * 2018-11-30 2019-01-16 Univ Surrey Multiple-gate transistor
CN109949785B (zh) * 2019-02-25 2021-03-23 中国船舶重工集团公司第七二六研究所 基于ⅲ型弯张换能器的拖曳线阵成阵结构
US11885674B2 (en) 2020-07-01 2024-01-30 Honeywell International Inc. Phototransistor apparatus and method of operating the phototransistor apparatus
CN116351352A (zh) * 2021-12-28 2023-06-30 彩科(苏州)生物科技有限公司 具有对称漏电流的晶体管光镊及包括该光镊的微流体设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5019876A (en) * 1978-07-14 1991-05-28 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor photo-electric converter
JPS5723280A (en) * 1980-07-18 1982-02-06 Nippon Telegr & Teleph Corp <Ntt> Field effect type light detector
JPH0654804B2 (ja) * 1984-01-30 1994-07-20 松下電器産業株式会社 固体撮像装置
US4665325A (en) * 1984-01-30 1987-05-12 Matsushita Electric Industrial Co., Ltd. Solid state image sensor with signal amplification
JP2813217B2 (ja) * 1989-11-20 1998-10-22 株式会社日立製作所 半導体装置
JPH0519876A (ja) * 1991-07-10 1993-01-29 Seiko Instr Inc 半導体集積回路装置
KR100193102B1 (ko) * 1994-08-25 1999-06-15 무명씨 반도체 장치 및 그 제조방법
JP3089971B2 (ja) * 1995-01-20 2000-09-18 カシオ計算機株式会社 光電変換素子の駆動方法
US6060723A (en) * 1997-07-18 2000-05-09 Hitachi, Ltd. Controllable conduction device
TW565939B (en) 2000-04-07 2003-12-11 Koninkl Philips Electronics Nv Electronic device manufacture
GB0014961D0 (en) * 2000-06-20 2000-08-09 Koninkl Philips Electronics Nv Light-emitting matrix array display devices with light sensing elements
JP2003187593A (ja) 2001-12-19 2003-07-04 Toshiba Corp 半導体装置及び不揮発性半導体記憶装置

Also Published As

Publication number Publication date
US20100182596A1 (en) 2010-07-22
JP2007519250A (ja) 2007-07-12
WO2005071758A3 (en) 2005-10-27
JP4702720B2 (ja) 2011-06-15
DE602005008376D1 (de) 2008-09-04
US7982178B2 (en) 2011-07-19
CN100505332C (zh) 2009-06-24
EP1711968B1 (de) 2008-07-23
US20090206237A1 (en) 2009-08-20
GB0401578D0 (en) 2004-02-25
EP1711968A2 (de) 2006-10-18
CN1910760A (zh) 2007-02-07
KR101116412B1 (ko) 2012-04-12
US7723667B2 (en) 2010-05-25
WO2005071758A2 (en) 2005-08-04
KR20070004589A (ko) 2007-01-09

Similar Documents

Publication Publication Date Title
ATE402490T1 (de) Fototransistor
TW200613310A (en) Organic photosensitive devices
JP2011216672A5 (de)
FR2926924B1 (fr) Source radiogene comprenant au moins une source d&#39;electrons associee a un dispositif photoelectrique de commande
TW200601558A (en) Image sensor with optical guard ring and fabrication method thereof
JP2011211697A5 (de)
WO2007019073A3 (en) Backside silicon wafer design reducing image artifacts from infrared radiation
EP1648030A3 (de) Matrix organischer Transistoren
TW200635062A (en) MOS image sensor
JP2011211182A5 (de)
EP2012361A3 (de) Organisches lichtemittierendes Element und Herstellungsverfahren dafür
WO2013006699A3 (en) Monolithically integrated active snubber
RU2012118396A (ru) Твердотельное устройство захвата изображения
EP3435416A3 (de) Bildgebungsvorrichtung
TW200725878A (en) CMOS image sensor
EP2701196A3 (de) Halbleiterbauelement mit geneigter Source-/Drain und zugehörige Verfahren
EP2587540A3 (de) Verfahren zum Zurückstellen einer photoelektrischen Umwandlungsvorrichtung und photoelektrische Umwandlungsvorrichtung
PH12020050066A1 (en) Light-emitting devices and methods for manufacturing the same
TW200629421A (en) Method of producing semiconductor device
EP2639838A3 (de) Phototransistor für optische berührungsempfindliche Bildschirme und Verfahren zur Herstellung des Phototransistors
JP2011082426A5 (de)
JP2005268814A5 (de)
TW200715552A (en) Power semiconductor device with interconnected gate trenches
ATE443334T1 (de) Optoelektronische pinzetten
TW200509396A (en) Active pixel cell using negative to positive voltage swing transfer transistor

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties