ATE389239T1 - Halbleiteranordnung bestehend aus einer anordnung von elektrisch programmierbaren nichtflüchtigen speicherelementen - Google Patents

Halbleiteranordnung bestehend aus einer anordnung von elektrisch programmierbaren nichtflüchtigen speicherelementen

Info

Publication number
ATE389239T1
ATE389239T1 AT01272169T AT01272169T ATE389239T1 AT E389239 T1 ATE389239 T1 AT E389239T1 AT 01272169 T AT01272169 T AT 01272169T AT 01272169 T AT01272169 T AT 01272169T AT E389239 T1 ATE389239 T1 AT E389239T1
Authority
AT
Austria
Prior art keywords
arrangement
volatile memory
wire
fuse wire
electrically programmable
Prior art date
Application number
AT01272169T
Other languages
English (en)
Inventor
Guoqiao Tao
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE389239T1 publication Critical patent/ATE389239T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
AT01272169T 2000-12-22 2001-12-07 Halbleiteranordnung bestehend aus einer anordnung von elektrisch programmierbaren nichtflüchtigen speicherelementen ATE389239T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP00204786 2000-12-22

Publications (1)

Publication Number Publication Date
ATE389239T1 true ATE389239T1 (de) 2008-03-15

Family

ID=8172545

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01272169T ATE389239T1 (de) 2000-12-22 2001-12-07 Halbleiteranordnung bestehend aus einer anordnung von elektrisch programmierbaren nichtflüchtigen speicherelementen

Country Status (8)

Country Link
US (1) US6559483B2 (de)
EP (1) EP1346412B1 (de)
JP (1) JP4223283B2 (de)
KR (1) KR100800637B1 (de)
CN (1) CN1222997C (de)
AT (1) ATE389239T1 (de)
DE (1) DE60133218T2 (de)
WO (1) WO2002052647A2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7102910B2 (en) 2002-12-05 2006-09-05 Koninklijke Philips Electronics, N.V. Programmable non-volatile semiconductor memory device
US20060035474A1 (en) * 2004-08-10 2006-02-16 Pavel Komilovich Increasing retention time for memory devices
KR100871697B1 (ko) * 2007-01-17 2008-12-08 삼성전자주식회사 열발산 구조를 포함하는 전기 퓨즈
US9318607B2 (en) * 2013-07-12 2016-04-19 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
CN104659013A (zh) * 2013-11-19 2015-05-27 中芯国际集成电路制造(上海)有限公司 电熔丝结构及半导体器件
CN104701296B (zh) * 2013-12-05 2018-10-16 中芯国际集成电路制造(上海)有限公司 电熔丝结构及其形成方法和半导体器件
US9791499B2 (en) * 2014-05-20 2017-10-17 International Business Machines Corporation Circuit to detect previous use of computer chips using passive test wires
DE102015121044B4 (de) 2015-12-03 2020-02-06 Infineon Technologies Ag Anschlussblock mit zwei Arten von Durchkontaktierungen und elektronische Vorrichtung, einen Anschlussblock umfassend
CN109244040B (zh) * 2018-07-23 2021-08-20 珠海市杰理科技股份有限公司 芯片熔丝结构及芯片

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4814853A (en) * 1981-10-28 1989-03-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device with programmable fuse
US4507756A (en) * 1982-03-23 1985-03-26 Texas Instruments Incorporated Avalanche fuse element as programmable device
GB2260219B (en) * 1991-10-01 1995-08-30 Northern Telecom Ltd Improvements in integrated circuits
US5444287A (en) * 1994-08-10 1995-08-22 International Business Machines Corporation Thermally activated noise immune fuse
TW317643B (de) * 1996-02-23 1997-10-11 Handotai Energy Kenkyusho Kk
JPH10275905A (ja) * 1997-03-31 1998-10-13 Mitsubishi Electric Corp シリコンウェーハの製造方法およびシリコンウェーハ
JP3244037B2 (ja) * 1997-10-31 2002-01-07 日本電気株式会社 半導体装置及びその製造方法
JPH11234823A (ja) * 1998-02-10 1999-08-27 Hitachi Ltd ガス絶縁開閉装置
US6259146B1 (en) * 1998-07-17 2001-07-10 Lsi Logic Corporation Self-aligned fuse structure and method with heat sink
US6496416B1 (en) * 2000-12-19 2002-12-17 Xilinx, Inc. Low voltage non-volatile memory cell

Also Published As

Publication number Publication date
CN1222997C (zh) 2005-10-12
KR20020076321A (ko) 2002-10-09
JP4223283B2 (ja) 2009-02-12
WO2002052647A3 (en) 2002-10-31
JP2004516683A (ja) 2004-06-03
DE60133218T2 (de) 2008-07-31
CN1404628A (zh) 2003-03-19
EP1346412A2 (de) 2003-09-24
US20020079513A1 (en) 2002-06-27
US6559483B2 (en) 2003-05-06
WO2002052647A2 (en) 2002-07-04
EP1346412B1 (de) 2008-03-12
DE60133218D1 (de) 2008-04-24
KR100800637B1 (ko) 2008-02-01

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