ATE363726T1 - Vorrichtung und verfahren zum vakuum- ionenstrahlsputtern - Google Patents

Vorrichtung und verfahren zum vakuum- ionenstrahlsputtern

Info

Publication number
ATE363726T1
ATE363726T1 AT00962690T AT00962690T ATE363726T1 AT E363726 T1 ATE363726 T1 AT E363726T1 AT 00962690 T AT00962690 T AT 00962690T AT 00962690 T AT00962690 T AT 00962690T AT E363726 T1 ATE363726 T1 AT E363726T1
Authority
AT
Austria
Prior art keywords
power
accelerator grid
control signal
power supply
grid
Prior art date
Application number
AT00962690T
Other languages
German (de)
English (en)
Inventor
Mervyn Davis
Gary Proudfoot
David Pearson
Original Assignee
Nordiko Technical Services Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nordiko Technical Services Ltd filed Critical Nordiko Technical Services Ltd
Application granted granted Critical
Publication of ATE363726T1 publication Critical patent/ATE363726T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3142—Ion plating
    • H01J2237/3146—Ion beam bombardment sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electron Sources, Ion Sources (AREA)
AT00962690T 1999-09-17 2000-09-18 Vorrichtung und verfahren zum vakuum- ionenstrahlsputtern ATE363726T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB9922110.3A GB9922110D0 (en) 1999-09-17 1999-09-17 Ion beam vacuum sputtering apparatus and method

Publications (1)

Publication Number Publication Date
ATE363726T1 true ATE363726T1 (de) 2007-06-15

Family

ID=10861175

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00962690T ATE363726T1 (de) 1999-09-17 2000-09-18 Vorrichtung und verfahren zum vakuum- ionenstrahlsputtern

Country Status (7)

Country Link
EP (1) EP1212777B1 (enExample)
JP (1) JP2003522296A (enExample)
AT (1) ATE363726T1 (enExample)
AU (1) AU7433800A (enExample)
DE (1) DE60035054T2 (enExample)
GB (1) GB9922110D0 (enExample)
WO (1) WO2001022470A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4439169B2 (ja) * 2002-09-10 2010-03-24 株式会社アルバック 真空処理方法及び真空装置
JP2009545101A (ja) 2006-07-20 2009-12-17 アビザ テクノロジー リミティド プラズマ源
CN101490789B (zh) 2006-07-20 2011-04-13 阿维扎技术有限公司 离子源
US8425741B2 (en) 2006-07-20 2013-04-23 Aviza Technology Limited Ion deposition apparatus having rotatable carousel for supporting a plurality of targets
GB0921791D0 (en) * 2009-12-14 2010-01-27 Aviza Technologies Ltd Ion beam source
US9097076B2 (en) 2013-02-07 2015-08-04 Weatherford Technology Holdings, Llc Hard surfacing non-metallic slip components for downhole tools
US9273527B2 (en) 2013-02-07 2016-03-01 Weatherford Technology Holdings, Llc Hard surfacing metallic slip components for downhole tools
CN113301704B (zh) * 2021-05-17 2023-08-22 中国科学院近代物理研究所 一种抑制差分系统充气气流效应的装置及方法
CN114302549B (zh) * 2021-12-31 2024-02-20 中山市博顿光电科技有限公司 射频离子源系统及射频离子源控制方法
CN114381702B (zh) * 2021-12-31 2023-01-06 北京航空航天大学 一种新型高能离子束流产生方法
EP4250335A1 (en) * 2022-03-25 2023-09-27 Impedans Ltd Apparatus for non-invasive sensing of radio-frequency current spectra flowing in a plasma processing chamber
KR102674395B1 (ko) * 2023-12-04 2024-06-12 주식회사 디에프텍 이온빔 소스를 이용하여 내플라즈마 특성 향상을 위한 코팅 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0390692A3 (en) * 1989-03-29 1991-10-02 Terumo Kabushiki Kaisha Method of forming thin film, apparatus for forming thin film and sensor
JPH07113173A (ja) * 1993-10-13 1995-05-02 Hitachi Ltd イオンビームスパッタ装置
JPH0967670A (ja) * 1995-08-25 1997-03-11 Nissin Electric Co Ltd イオンビームスパッタリング装置
GB9622127D0 (en) * 1996-10-24 1996-12-18 Nordiko Ltd Ion gun

Also Published As

Publication number Publication date
DE60035054D1 (de) 2007-07-12
AU7433800A (en) 2001-04-24
EP1212777B1 (en) 2007-05-30
EP1212777A1 (en) 2002-06-12
JP2003522296A (ja) 2003-07-22
DE60035054T2 (de) 2008-01-03
WO2001022470A1 (en) 2001-03-29
GB9922110D0 (en) 1999-11-17

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Legal Events

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