JP2003522296A - イオンビーム真空スパッタリング装置および方法 - Google Patents
イオンビーム真空スパッタリング装置および方法Info
- Publication number
- JP2003522296A JP2003522296A JP2001525747A JP2001525747A JP2003522296A JP 2003522296 A JP2003522296 A JP 2003522296A JP 2001525747 A JP2001525747 A JP 2001525747A JP 2001525747 A JP2001525747 A JP 2001525747A JP 2003522296 A JP2003522296 A JP 2003522296A
- Authority
- JP
- Japan
- Prior art keywords
- accelerator grid
- vacuum sputtering
- substrate
- target
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 78
- 238000010884 ion-beam technique Methods 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 150000002500 ions Chemical class 0.000 claims abstract description 79
- 239000000463 material Substances 0.000 claims abstract description 45
- 238000000151 deposition Methods 0.000 claims abstract description 35
- 238000000605 extraction Methods 0.000 claims abstract description 26
- 230000010354 integration Effects 0.000 claims abstract description 13
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000003321 amplification Effects 0.000 claims description 6
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 6
- 230000003750 conditioning effect Effects 0.000 claims description 3
- 230000008021 deposition Effects 0.000 abstract description 27
- 238000010586 diagram Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 230000004907 flux Effects 0.000 description 10
- 239000002131 composite material Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000007737 ion beam deposition Methods 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 102100030872 28S ribosomal protein S15, mitochondrial Human genes 0.000 description 1
- 241001137251 Corvidae Species 0.000 description 1
- 101100041177 Homo sapiens MRPS15 gene Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000009123 feedback regulation Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3142—Ion plating
- H01J2237/3146—Ion beam bombardment sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9922110.3 | 1999-09-17 | ||
| GBGB9922110.3A GB9922110D0 (en) | 1999-09-17 | 1999-09-17 | Ion beam vacuum sputtering apparatus and method |
| PCT/GB2000/003577 WO2001022470A1 (en) | 1999-09-17 | 2000-09-18 | Ion beam vacuum sputtering apparatus and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003522296A true JP2003522296A (ja) | 2003-07-22 |
| JP2003522296A5 JP2003522296A5 (enExample) | 2007-11-01 |
Family
ID=10861175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001525747A Pending JP2003522296A (ja) | 1999-09-17 | 2000-09-18 | イオンビーム真空スパッタリング装置および方法 |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP1212777B1 (enExample) |
| JP (1) | JP2003522296A (enExample) |
| AT (1) | ATE363726T1 (enExample) |
| AU (1) | AU7433800A (enExample) |
| DE (1) | DE60035054T2 (enExample) |
| GB (1) | GB9922110D0 (enExample) |
| WO (1) | WO2001022470A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102674395B1 (ko) * | 2023-12-04 | 2024-06-12 | 주식회사 디에프텍 | 이온빔 소스를 이용하여 내플라즈마 특성 향상을 위한 코팅 방법 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4439169B2 (ja) * | 2002-09-10 | 2010-03-24 | 株式会社アルバック | 真空処理方法及び真空装置 |
| JP2009545101A (ja) | 2006-07-20 | 2009-12-17 | アビザ テクノロジー リミティド | プラズマ源 |
| CN101490789B (zh) | 2006-07-20 | 2011-04-13 | 阿维扎技术有限公司 | 离子源 |
| US8425741B2 (en) | 2006-07-20 | 2013-04-23 | Aviza Technology Limited | Ion deposition apparatus having rotatable carousel for supporting a plurality of targets |
| GB0921791D0 (en) * | 2009-12-14 | 2010-01-27 | Aviza Technologies Ltd | Ion beam source |
| US9097076B2 (en) | 2013-02-07 | 2015-08-04 | Weatherford Technology Holdings, Llc | Hard surfacing non-metallic slip components for downhole tools |
| US9273527B2 (en) | 2013-02-07 | 2016-03-01 | Weatherford Technology Holdings, Llc | Hard surfacing metallic slip components for downhole tools |
| CN113301704B (zh) * | 2021-05-17 | 2023-08-22 | 中国科学院近代物理研究所 | 一种抑制差分系统充气气流效应的装置及方法 |
| CN114302549B (zh) * | 2021-12-31 | 2024-02-20 | 中山市博顿光电科技有限公司 | 射频离子源系统及射频离子源控制方法 |
| CN114381702B (zh) * | 2021-12-31 | 2023-01-06 | 北京航空航天大学 | 一种新型高能离子束流产生方法 |
| EP4250335A1 (en) * | 2022-03-25 | 2023-09-27 | Impedans Ltd | Apparatus for non-invasive sensing of radio-frequency current spectra flowing in a plasma processing chamber |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07113173A (ja) * | 1993-10-13 | 1995-05-02 | Hitachi Ltd | イオンビームスパッタ装置 |
| JPH0967670A (ja) * | 1995-08-25 | 1997-03-11 | Nissin Electric Co Ltd | イオンビームスパッタリング装置 |
| JP2001502468A (ja) * | 1996-10-24 | 2001-02-20 | ノルディコ・リミテッド | イオン銃 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0390692A3 (en) * | 1989-03-29 | 1991-10-02 | Terumo Kabushiki Kaisha | Method of forming thin film, apparatus for forming thin film and sensor |
-
1999
- 1999-09-17 GB GBGB9922110.3A patent/GB9922110D0/en not_active Ceased
-
2000
- 2000-09-18 JP JP2001525747A patent/JP2003522296A/ja active Pending
- 2000-09-18 AU AU74338/00A patent/AU7433800A/en not_active Abandoned
- 2000-09-18 WO PCT/GB2000/003577 patent/WO2001022470A1/en not_active Ceased
- 2000-09-18 AT AT00962690T patent/ATE363726T1/de not_active IP Right Cessation
- 2000-09-18 DE DE60035054T patent/DE60035054T2/de not_active Expired - Lifetime
- 2000-09-18 EP EP00962690A patent/EP1212777B1/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07113173A (ja) * | 1993-10-13 | 1995-05-02 | Hitachi Ltd | イオンビームスパッタ装置 |
| JPH0967670A (ja) * | 1995-08-25 | 1997-03-11 | Nissin Electric Co Ltd | イオンビームスパッタリング装置 |
| JP2001502468A (ja) * | 1996-10-24 | 2001-02-20 | ノルディコ・リミテッド | イオン銃 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102674395B1 (ko) * | 2023-12-04 | 2024-06-12 | 주식회사 디에프텍 | 이온빔 소스를 이용하여 내플라즈마 특성 향상을 위한 코팅 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE60035054D1 (de) | 2007-07-12 |
| AU7433800A (en) | 2001-04-24 |
| EP1212777B1 (en) | 2007-05-30 |
| EP1212777A1 (en) | 2002-06-12 |
| DE60035054T2 (de) | 2008-01-03 |
| WO2001022470A1 (en) | 2001-03-29 |
| GB9922110D0 (en) | 1999-11-17 |
| ATE363726T1 (de) | 2007-06-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Bradley et al. | The distribution of ion energies at the substrate in an asymmetric bi-polar pulsed DC magnetron discharge | |
| JP2003522296A (ja) | イオンビーム真空スパッタリング装置および方法 | |
| EP0739001B1 (en) | Deposition of insulating thin film by plurality of ion beams | |
| JPH06220627A (ja) | 成膜装置 | |
| US20080073587A1 (en) | Sputtering coating of protective layer for charged particle beam processing | |
| JP2824502B2 (ja) | 荷電粒子を用いたスパッタリング装置及びスパッタリング蒸着方法 | |
| JPH0853764A (ja) | プラズマの均一性を改善するマグネトロンにおけるマルチプル・アノードの使用 | |
| JPH06158312A (ja) | 酸化金属皮膜の蒸着装置及び蒸着方法 | |
| WO2007120967A2 (en) | Rf powered target for increasing deposition uniformity in sputtering systems | |
| US6338775B1 (en) | Apparatus and method for uniformly depositing thin films over substrates | |
| JP3535224B2 (ja) | スパッタ法によって基板上に膜を堆積させる方法 | |
| JPH07109571A (ja) | 電子ビーム式連続蒸着装置 | |
| US8314403B2 (en) | Gas field ion source with coated tip | |
| Lu et al. | Measurement of electron energy distribution function in an argon/copper plasma for ionized physical vapor deposition | |
| US20020014402A1 (en) | Sputtering system, sputtering support system and sputtering control method | |
| WO2005091329A2 (en) | Sputtering device for manufacturing thin films | |
| JP3949205B2 (ja) | マグネトロンカソードを備えたメタル配線スパッタ装置 | |
| JP3403383B2 (ja) | イオン源制御方法およびイオン源制御装置 | |
| JP3937272B2 (ja) | スパッタ装置及びスパッタ方法 | |
| JP3038828B2 (ja) | プラズマ処理方法 | |
| JPS6240386A (ja) | Ｅｃｒプラズマ処理装置 | |
| JPH10121243A (ja) | 真空薄膜成形装置 | |
| JP2000144417A (ja) | 高周波スパッタリング装置 | |
| JPH09202968A (ja) | スパッタ装置及び堆積膜形成方法 | |
| EP1381703B1 (en) | A method for determining a critical size of an inclusion in aluminum or aluminum alloy sputtering target |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20070817 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070830 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070830 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20070817 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101208 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110225 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110304 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20110803 |