GB9922110D0 - Ion beam vacuum sputtering apparatus and method - Google Patents

Ion beam vacuum sputtering apparatus and method

Info

Publication number
GB9922110D0
GB9922110D0 GBGB9922110.3A GB9922110A GB9922110D0 GB 9922110 D0 GB9922110 D0 GB 9922110D0 GB 9922110 A GB9922110 A GB 9922110A GB 9922110 D0 GB9922110 D0 GB 9922110D0
Authority
GB
United Kingdom
Prior art keywords
power
accelerator grid
control signal
power supply
grid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB9922110.3A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nordiko Ltd
Original Assignee
Nordiko Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nordiko Ltd filed Critical Nordiko Ltd
Priority to GBGB9922110.3A priority Critical patent/GB9922110D0/en
Publication of GB9922110D0 publication Critical patent/GB9922110D0/en
Priority to AU74338/00A priority patent/AU7433800A/en
Priority to JP2001525747A priority patent/JP2003522296A/ja
Priority to EP00962690A priority patent/EP1212777B1/en
Priority to DE60035054T priority patent/DE60035054T2/de
Priority to PCT/GB2000/003577 priority patent/WO2001022470A1/en
Priority to AT00962690T priority patent/ATE363726T1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3142—Ion plating
    • H01J2237/3146—Ion beam bombardment sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electron Sources, Ion Sources (AREA)
GBGB9922110.3A 1999-09-17 1999-09-17 Ion beam vacuum sputtering apparatus and method Ceased GB9922110D0 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GBGB9922110.3A GB9922110D0 (en) 1999-09-17 1999-09-17 Ion beam vacuum sputtering apparatus and method
AU74338/00A AU7433800A (en) 1999-09-17 2000-09-18 Ion beam vacuum sputtering apparatus and method
JP2001525747A JP2003522296A (ja) 1999-09-17 2000-09-18 イオンビーム真空スパッタリング装置および方法
EP00962690A EP1212777B1 (en) 1999-09-17 2000-09-18 Ion beam vacuum sputtering apparatus and method
DE60035054T DE60035054T2 (de) 1999-09-17 2000-09-18 Ionenstrahl-Vakuumzerstäubungsapparatur und Verfahren
PCT/GB2000/003577 WO2001022470A1 (en) 1999-09-17 2000-09-18 Ion beam vacuum sputtering apparatus and method
AT00962690T ATE363726T1 (de) 1999-09-17 2000-09-18 Vorrichtung und verfahren zum vakuum- ionenstrahlsputtern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB9922110.3A GB9922110D0 (en) 1999-09-17 1999-09-17 Ion beam vacuum sputtering apparatus and method

Publications (1)

Publication Number Publication Date
GB9922110D0 true GB9922110D0 (en) 1999-11-17

Family

ID=10861175

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB9922110.3A Ceased GB9922110D0 (en) 1999-09-17 1999-09-17 Ion beam vacuum sputtering apparatus and method

Country Status (7)

Country Link
EP (1) EP1212777B1 (enExample)
JP (1) JP2003522296A (enExample)
AT (1) ATE363726T1 (enExample)
AU (1) AU7433800A (enExample)
DE (1) DE60035054T2 (enExample)
GB (1) GB9922110D0 (enExample)
WO (1) WO2001022470A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113301704A (zh) * 2021-05-17 2021-08-24 中国科学院近代物理研究所 一种抑制差分系统充气气流效应的装置及方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4439169B2 (ja) * 2002-09-10 2010-03-24 株式会社アルバック 真空処理方法及び真空装置
JP2009545101A (ja) 2006-07-20 2009-12-17 アビザ テクノロジー リミティド プラズマ源
CN101490789B (zh) 2006-07-20 2011-04-13 阿维扎技术有限公司 离子源
US8425741B2 (en) 2006-07-20 2013-04-23 Aviza Technology Limited Ion deposition apparatus having rotatable carousel for supporting a plurality of targets
GB0921791D0 (en) * 2009-12-14 2010-01-27 Aviza Technologies Ltd Ion beam source
US9097076B2 (en) 2013-02-07 2015-08-04 Weatherford Technology Holdings, Llc Hard surfacing non-metallic slip components for downhole tools
US9273527B2 (en) 2013-02-07 2016-03-01 Weatherford Technology Holdings, Llc Hard surfacing metallic slip components for downhole tools
CN114302549B (zh) * 2021-12-31 2024-02-20 中山市博顿光电科技有限公司 射频离子源系统及射频离子源控制方法
CN114381702B (zh) * 2021-12-31 2023-01-06 北京航空航天大学 一种新型高能离子束流产生方法
EP4250335A1 (en) * 2022-03-25 2023-09-27 Impedans Ltd Apparatus for non-invasive sensing of radio-frequency current spectra flowing in a plasma processing chamber
KR102674395B1 (ko) * 2023-12-04 2024-06-12 주식회사 디에프텍 이온빔 소스를 이용하여 내플라즈마 특성 향상을 위한 코팅 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0390692A3 (en) * 1989-03-29 1991-10-02 Terumo Kabushiki Kaisha Method of forming thin film, apparatus for forming thin film and sensor
JPH07113173A (ja) * 1993-10-13 1995-05-02 Hitachi Ltd イオンビームスパッタ装置
JPH0967670A (ja) * 1995-08-25 1997-03-11 Nissin Electric Co Ltd イオンビームスパッタリング装置
GB9622127D0 (en) * 1996-10-24 1996-12-18 Nordiko Ltd Ion gun

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113301704A (zh) * 2021-05-17 2021-08-24 中国科学院近代物理研究所 一种抑制差分系统充气气流效应的装置及方法
CN113301704B (zh) * 2021-05-17 2023-08-22 中国科学院近代物理研究所 一种抑制差分系统充气气流效应的装置及方法

Also Published As

Publication number Publication date
DE60035054D1 (de) 2007-07-12
AU7433800A (en) 2001-04-24
EP1212777B1 (en) 2007-05-30
EP1212777A1 (en) 2002-06-12
JP2003522296A (ja) 2003-07-22
DE60035054T2 (de) 2008-01-03
WO2001022470A1 (en) 2001-03-29
ATE363726T1 (de) 2007-06-15

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)