ATE323787T1 - Plasmaunterstützte filmabscheidung - Google Patents
Plasmaunterstützte filmabscheidungInfo
- Publication number
- ATE323787T1 ATE323787T1 AT03816980T AT03816980T ATE323787T1 AT E323787 T1 ATE323787 T1 AT E323787T1 AT 03816980 T AT03816980 T AT 03816980T AT 03816980 T AT03816980 T AT 03816980T AT E323787 T1 ATE323787 T1 AT E323787T1
- Authority
- AT
- Austria
- Prior art keywords
- electrode
- certain embodiments
- interior cavity
- deposition chamber
- plasma
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title abstract 4
- 238000000151 deposition Methods 0.000 abstract 6
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 238000000429 assembly Methods 0.000 abstract 1
- 230000000712 assembly Effects 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Health & Medical Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Saccharide Compounds (AREA)
- Formation Of Insulating Films (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US43452202P | 2002-12-18 | 2002-12-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE323787T1 true ATE323787T1 (de) | 2006-05-15 |
Family
ID=33449676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT03816980T ATE323787T1 (de) | 2002-12-18 | 2003-12-18 | Plasmaunterstützte filmabscheidung |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US7157123B2 (de) |
| EP (1) | EP1579027B1 (de) |
| JP (1) | JP2006521462A (de) |
| AT (1) | ATE323787T1 (de) |
| AU (1) | AU2003304125A1 (de) |
| CA (1) | CA2509952A1 (de) |
| DE (1) | DE60304745T2 (de) |
| WO (1) | WO2004101844A1 (de) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7077721B2 (en) | 2000-02-17 | 2006-07-18 | Applied Materials, Inc. | Pad assembly for electrochemical mechanical processing |
| DE10352144B8 (de) * | 2003-11-04 | 2008-11-13 | Von Ardenne Anlagentechnik Gmbh | Vakuumbeschichtungsanlage zum Beschichten von längserstreckten Substraten |
| FR2865420B1 (fr) * | 2004-01-28 | 2007-09-14 | Saint Gobain | Procede de nettoyage d'un substrat |
| TWI390062B (zh) * | 2004-03-05 | 2013-03-21 | Tosoh Corp | 圓柱形濺射標靶,陶瓷燒結體,以及製造燒結體的方法 |
| DE102004020768A1 (de) | 2004-04-16 | 2005-11-17 | Centrotherm Photovoltaics Gmbh + Co. Kg | Plasmareaktor mit hoher Produktivität |
| WO2006017349A1 (en) | 2004-07-12 | 2006-02-16 | Cardinal Cg Company | Low-maintenance coatings |
| CA2586842C (en) * | 2004-11-15 | 2013-01-08 | Cardinal Cg Company | Methods and equipment for depositing coatings having sequenced structures |
| US8092660B2 (en) | 2004-12-03 | 2012-01-10 | Cardinal Cg Company | Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films |
| US7923114B2 (en) | 2004-12-03 | 2011-04-12 | Cardinal Cg Company | Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films |
| WO2007051105A2 (en) * | 2005-10-24 | 2007-05-03 | Soleras Ltd. | Cathode incorporating fixed or rotating target in combination with a moving magnet assembly and applications thereof |
| US20070089982A1 (en) * | 2005-10-24 | 2007-04-26 | Hendryk Richert | Sputtering target and method/apparatus for cooling the target |
| EP1783815A1 (de) * | 2005-11-07 | 2007-05-09 | ARCELOR France | Verfahren und Anlage zum Ätzen eines Metallbandes mittels Vakuum-Magnetron-Zerstäubung |
| JP5177958B2 (ja) * | 2006-03-31 | 2013-04-10 | Hoya株式会社 | 処理データ管理システム、磁気ディスク製造装置用の処理システム、および、磁気ディスク製造装置のデータ管理方法 |
| JP2009534563A (ja) | 2006-04-19 | 2009-09-24 | 日本板硝子株式会社 | 同等の単独の表面反射率を有する対向機能コーティング |
| US20080011599A1 (en) | 2006-07-12 | 2008-01-17 | Brabender Dennis M | Sputtering apparatus including novel target mounting and/or control |
| KR101512166B1 (ko) | 2007-09-14 | 2015-04-14 | 카디날 씨지 컴퍼니 | 관리가 용이한 코팅 기술 |
| US9175383B2 (en) * | 2008-01-16 | 2015-11-03 | Applied Materials, Inc. | Double-coating device with one process chamber |
| WO2010053921A1 (en) | 2008-11-04 | 2010-05-14 | Apogee Enterprises, Inc. | Coated glass surfaces and method for coating a glass substrate |
| DE102009015737B4 (de) * | 2009-03-31 | 2013-12-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Magnetron-Beschichtungsmodul sowie Magnetron-Beschichtungsverfahren |
| CN101988189B (zh) * | 2009-08-07 | 2012-10-10 | 鸿富锦精密工业(深圳)有限公司 | 磁控溅射靶及采用该磁控溅射靶的磁控溅射装置 |
| KR20120085254A (ko) * | 2009-09-05 | 2012-07-31 | 제너럴 플라즈마, 인크. | 플라스마 증강 화학적 기상 증착 장치 |
| JP5270505B2 (ja) * | 2009-10-05 | 2013-08-21 | 株式会社神戸製鋼所 | プラズマcvd装置 |
| DE102010063685B4 (de) * | 2010-02-21 | 2012-07-12 | Von Ardenne Anlagentechnik Gmbh | Magnetronanordnung mit einem Hohltarget |
| US9142392B2 (en) | 2013-04-29 | 2015-09-22 | Varian Semiconductor Equipment Associates, Inc. | Self-cleaning radio frequency plasma source |
| CN103993274A (zh) * | 2014-05-09 | 2014-08-20 | 浙江上方电子装备有限公司 | 一种磁控溅射系统及其清洁方法 |
| US10816703B2 (en) | 2015-09-28 | 2020-10-27 | Tru Vue, Inc. | Near infrared reflective coatings |
| AU2017254469B2 (en) | 2016-04-19 | 2021-04-01 | Apogee Enterprises, Inc. | Coated glass surfaces and method for coating a glass substrate |
| WO2018093985A1 (en) | 2016-11-17 | 2018-05-24 | Cardinal Cg Company | Static-dissipative coating technology |
| US10513459B2 (en) | 2017-05-04 | 2019-12-24 | Apogee Enterprises, Inc. | Low emissivity coatings, glass surfaces including the same, and methods for making the same |
| CN112820619B (zh) * | 2021-03-06 | 2024-12-31 | 东莞市峰谷纳米科技有限公司 | 一种等离子表面清洁装置 |
| DE102022000838A1 (de) | 2022-03-10 | 2023-09-14 | Helmut Popp | Anlage zum Herstellen von wenigstens einer dünnsten Schicht |
| WO2025192042A1 (ja) * | 2024-03-13 | 2025-09-18 | 株式会社ジャパンディスプレイ | 成膜装置および窒化物半導体膜の成膜方法 |
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| JPS6089573A (ja) * | 1983-10-20 | 1985-05-20 | Ricoh Co Ltd | 透明導電膜 |
| DE3521318A1 (de) * | 1985-06-14 | 1986-12-18 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und vorrichtung zum behandeln, insbesondere zum beschichten, von substraten mittels einer plasmaentladung |
| US5512102A (en) * | 1985-10-14 | 1996-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
| DE3709177A1 (de) * | 1987-03-20 | 1988-09-29 | Leybold Ag | Verfahren und vorrichtung zur regelung der reaktiven schichtabscheidung auf substraten mittels magnetronkatoden |
| US4849087A (en) * | 1988-02-11 | 1989-07-18 | Southwall Technologies | Apparatus for obtaining transverse uniformity during thin film deposition on extended substrate |
| JPH0215174A (ja) * | 1988-07-01 | 1990-01-18 | Canon Inc | マイクロ波プラズマcvd装置 |
| US5082685A (en) * | 1989-07-24 | 1992-01-21 | Tdk Corporation | Method of conducting plasma treatment |
| US5047131A (en) * | 1989-11-08 | 1991-09-10 | The Boc Group, Inc. | Method for coating substrates with silicon based compounds |
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| US5045166A (en) * | 1990-05-21 | 1991-09-03 | Mcnc | Magnetron method and apparatus for producing high density ionic gas discharge |
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| DE4126236C2 (de) * | 1991-08-08 | 2000-01-05 | Leybold Ag | Rotierende Magnetron-Kathode und Verwendung einer rotierenden Magnetron-Kathode |
| JPH0768620B2 (ja) * | 1991-09-30 | 1995-07-26 | 中外炉工業株式会社 | 金属ストリップの表面清浄化装置 |
| GB9121665D0 (en) | 1991-10-11 | 1991-11-27 | Boc Group Plc | Sputtering processes and apparatus |
| FR2703073B1 (fr) * | 1993-03-26 | 1995-05-05 | Lorraine Laminage | Procédé et dispositif pour le revêtement en continu d'un matériau métallique en défilement par un dépôt de polymère à gradient de composition, et produit obtenu par ce procédé. |
| JP3319023B2 (ja) * | 1993-04-15 | 2002-08-26 | カシオ電子工業株式会社 | 記録装置 |
| CA2123479C (en) * | 1993-07-01 | 1999-07-06 | Peter A. Sieck | Anode structure for magnetron sputtering systems |
| US5531834A (en) * | 1993-07-13 | 1996-07-02 | Tokyo Electron Kabushiki Kaisha | Plasma film forming method and apparatus and plasma processing apparatus |
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| JPH09106899A (ja) * | 1995-10-11 | 1997-04-22 | Anelva Corp | プラズマcvd装置及び方法並びにドライエッチング装置及び方法 |
| US5743966A (en) * | 1996-05-31 | 1998-04-28 | The Boc Group, Inc. | Unwinding of plastic film in the presence of a plasma |
| BE1010420A3 (fr) | 1996-07-12 | 1998-07-07 | Cockerill Rech & Dev | Procede pour la formation d'un revetement sur un substrat et installation pour la mise en oeuvre de ce procede. |
| US6110540A (en) * | 1996-07-12 | 2000-08-29 | The Boc Group, Inc. | Plasma apparatus and method |
| DE19740793C2 (de) * | 1997-09-17 | 2003-03-20 | Bosch Gmbh Robert | Verfahren zur Beschichtung von Oberflächen mittels einer Anlage mit Sputterelektroden und Verwendung des Verfahrens |
| US6055929A (en) * | 1997-09-24 | 2000-05-02 | The Dow Chemical Company | Magnetron |
| TW460599B (en) * | 1998-01-14 | 2001-10-21 | Toshiba Corp | Method for forming fine wiring pattern |
| US6365010B1 (en) * | 1998-11-06 | 2002-04-02 | Scivac | Sputtering apparatus and process for high rate coatings |
| WO2000044207A1 (en) * | 1999-01-20 | 2000-07-27 | Nkt Research Center A/S | Method for the excitation of a plasma and a use of the method |
| JP3088721B1 (ja) * | 1999-08-11 | 2000-09-18 | キヤノン販売株式会社 | 不純物処理装置及び不純物処理装置のクリーニング方法 |
| US6462482B1 (en) * | 1999-12-02 | 2002-10-08 | Anelva Corporation | Plasma processing system for sputter deposition applications |
| JP3953247B2 (ja) * | 2000-01-11 | 2007-08-08 | 株式会社日立国際電気 | プラズマ処理装置 |
| AU2001273762A1 (en) * | 2000-07-03 | 2002-01-14 | Speedel Pharma Ag | Process for the preparation of (r)-2-alkyl-3-phenyl-1-propanols |
| WO2002084702A2 (en) | 2001-01-16 | 2002-10-24 | Lampkin Curtis M | Sputtering deposition apparatus and method for depositing surface films |
| SG149680A1 (en) * | 2001-12-12 | 2009-02-27 | Semiconductor Energy Lab | Film formation apparatus and film formation method and cleaning method |
| KR100846484B1 (ko) * | 2002-03-14 | 2008-07-17 | 삼성전자주식회사 | Rmim 전극 및 그 제조방법 및 이를 채용하는 스퍼터링장치 |
| US6812648B2 (en) * | 2002-10-21 | 2004-11-02 | Guardian Industries Corp. | Method of cleaning ion source, and corresponding apparatus/system |
-
2003
- 2003-12-18 CA CA002509952A patent/CA2509952A1/en not_active Abandoned
- 2003-12-18 AT AT03816980T patent/ATE323787T1/de not_active IP Right Cessation
- 2003-12-18 AU AU2003304125A patent/AU2003304125A1/en not_active Abandoned
- 2003-12-18 US US10/739,887 patent/US7157123B2/en not_active Expired - Lifetime
- 2003-12-18 JP JP2004571910A patent/JP2006521462A/ja not_active Withdrawn
- 2003-12-18 EP EP03816980A patent/EP1579027B1/de not_active Expired - Lifetime
- 2003-12-18 DE DE60304745T patent/DE60304745T2/de not_active Expired - Lifetime
- 2003-12-18 WO PCT/US2003/041981 patent/WO2004101844A1/en not_active Ceased
-
2006
- 2006-11-22 US US11/562,689 patent/US20070102291A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP1579027A1 (de) | 2005-09-28 |
| US20070102291A1 (en) | 2007-05-10 |
| US7157123B2 (en) | 2007-01-02 |
| AU2003304125A1 (en) | 2004-12-03 |
| CA2509952A1 (en) | 2004-11-25 |
| DE60304745T2 (de) | 2007-01-25 |
| US20040163945A1 (en) | 2004-08-26 |
| WO2004101844A1 (en) | 2004-11-25 |
| JP2006521462A (ja) | 2006-09-21 |
| EP1579027B1 (de) | 2006-04-19 |
| DE60304745D1 (de) | 2006-05-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |