ATE323787T1 - Plasmaunterstützte filmabscheidung - Google Patents

Plasmaunterstützte filmabscheidung

Info

Publication number
ATE323787T1
ATE323787T1 AT03816980T AT03816980T ATE323787T1 AT E323787 T1 ATE323787 T1 AT E323787T1 AT 03816980 T AT03816980 T AT 03816980T AT 03816980 T AT03816980 T AT 03816980T AT E323787 T1 ATE323787 T1 AT E323787T1
Authority
AT
Austria
Prior art keywords
electrode
certain embodiments
interior cavity
deposition chamber
plasma
Prior art date
Application number
AT03816980T
Other languages
English (en)
Inventor
Klaus Hartig
Original Assignee
Cardinal Cg Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cardinal Cg Co filed Critical Cardinal Cg Co
Application granted granted Critical
Publication of ATE323787T1 publication Critical patent/ATE323787T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853Hygiene
    • H01J37/32862In situ cleaning of vessels and/or internal parts
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405Cleaning of reactor or parts inside the reactor by using reactive gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Saccharide Compounds (AREA)
  • Formation Of Insulating Films (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
AT03816980T 2002-12-18 2003-12-18 Plasmaunterstützte filmabscheidung ATE323787T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US43452202P 2002-12-18 2002-12-18

Publications (1)

Publication Number Publication Date
ATE323787T1 true ATE323787T1 (de) 2006-05-15

Family

ID=33449676

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03816980T ATE323787T1 (de) 2002-12-18 2003-12-18 Plasmaunterstützte filmabscheidung

Country Status (8)

Country Link
US (2) US7157123B2 (de)
EP (1) EP1579027B1 (de)
JP (1) JP2006521462A (de)
AT (1) ATE323787T1 (de)
AU (1) AU2003304125A1 (de)
CA (1) CA2509952A1 (de)
DE (1) DE60304745T2 (de)
WO (1) WO2004101844A1 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7077721B2 (en) 2000-02-17 2006-07-18 Applied Materials, Inc. Pad assembly for electrochemical mechanical processing
DE10352144B8 (de) * 2003-11-04 2008-11-13 Von Ardenne Anlagentechnik Gmbh Vakuumbeschichtungsanlage zum Beschichten von längserstreckten Substraten
FR2865420B1 (fr) * 2004-01-28 2007-09-14 Saint Gobain Procede de nettoyage d'un substrat
TWI390062B (zh) * 2004-03-05 2013-03-21 Tosoh Corp 圓柱形濺射標靶,陶瓷燒結體,以及製造燒結體的方法
DE102004020768A1 (de) 2004-04-16 2005-11-17 Centrotherm Photovoltaics Gmbh + Co. Kg Plasmareaktor mit hoher Produktivität
WO2006017349A1 (en) 2004-07-12 2006-02-16 Cardinal Cg Company Low-maintenance coatings
CA2586842C (en) * 2004-11-15 2013-01-08 Cardinal Cg Company Methods and equipment for depositing coatings having sequenced structures
US8092660B2 (en) 2004-12-03 2012-01-10 Cardinal Cg Company Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films
US7923114B2 (en) 2004-12-03 2011-04-12 Cardinal Cg Company Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films
WO2007051105A2 (en) * 2005-10-24 2007-05-03 Soleras Ltd. Cathode incorporating fixed or rotating target in combination with a moving magnet assembly and applications thereof
US20070089982A1 (en) * 2005-10-24 2007-04-26 Hendryk Richert Sputtering target and method/apparatus for cooling the target
EP1783815A1 (de) * 2005-11-07 2007-05-09 ARCELOR France Verfahren und Anlage zum Ätzen eines Metallbandes mittels Vakuum-Magnetron-Zerstäubung
JP5177958B2 (ja) * 2006-03-31 2013-04-10 Hoya株式会社 処理データ管理システム、磁気ディスク製造装置用の処理システム、および、磁気ディスク製造装置のデータ管理方法
JP2009534563A (ja) 2006-04-19 2009-09-24 日本板硝子株式会社 同等の単独の表面反射率を有する対向機能コーティング
US20080011599A1 (en) 2006-07-12 2008-01-17 Brabender Dennis M Sputtering apparatus including novel target mounting and/or control
KR101512166B1 (ko) 2007-09-14 2015-04-14 카디날 씨지 컴퍼니 관리가 용이한 코팅 기술
US9175383B2 (en) * 2008-01-16 2015-11-03 Applied Materials, Inc. Double-coating device with one process chamber
WO2010053921A1 (en) 2008-11-04 2010-05-14 Apogee Enterprises, Inc. Coated glass surfaces and method for coating a glass substrate
DE102009015737B4 (de) * 2009-03-31 2013-12-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Magnetron-Beschichtungsmodul sowie Magnetron-Beschichtungsverfahren
CN101988189B (zh) * 2009-08-07 2012-10-10 鸿富锦精密工业(深圳)有限公司 磁控溅射靶及采用该磁控溅射靶的磁控溅射装置
KR20120085254A (ko) * 2009-09-05 2012-07-31 제너럴 플라즈마, 인크. 플라스마 증강 화학적 기상 증착 장치
JP5270505B2 (ja) * 2009-10-05 2013-08-21 株式会社神戸製鋼所 プラズマcvd装置
DE102010063685B4 (de) * 2010-02-21 2012-07-12 Von Ardenne Anlagentechnik Gmbh Magnetronanordnung mit einem Hohltarget
US9142392B2 (en) 2013-04-29 2015-09-22 Varian Semiconductor Equipment Associates, Inc. Self-cleaning radio frequency plasma source
CN103993274A (zh) * 2014-05-09 2014-08-20 浙江上方电子装备有限公司 一种磁控溅射系统及其清洁方法
US10816703B2 (en) 2015-09-28 2020-10-27 Tru Vue, Inc. Near infrared reflective coatings
AU2017254469B2 (en) 2016-04-19 2021-04-01 Apogee Enterprises, Inc. Coated glass surfaces and method for coating a glass substrate
WO2018093985A1 (en) 2016-11-17 2018-05-24 Cardinal Cg Company Static-dissipative coating technology
US10513459B2 (en) 2017-05-04 2019-12-24 Apogee Enterprises, Inc. Low emissivity coatings, glass surfaces including the same, and methods for making the same
CN112820619B (zh) * 2021-03-06 2024-12-31 东莞市峰谷纳米科技有限公司 一种等离子表面清洁装置
DE102022000838A1 (de) 2022-03-10 2023-09-14 Helmut Popp Anlage zum Herstellen von wenigstens einer dünnsten Schicht
WO2025192042A1 (ja) * 2024-03-13 2025-09-18 株式会社ジャパンディスプレイ 成膜装置および窒化物半導体膜の成膜方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6089573A (ja) * 1983-10-20 1985-05-20 Ricoh Co Ltd 透明導電膜
DE3521318A1 (de) * 1985-06-14 1986-12-18 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum behandeln, insbesondere zum beschichten, von substraten mittels einer plasmaentladung
US5512102A (en) * 1985-10-14 1996-04-30 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
DE3709177A1 (de) * 1987-03-20 1988-09-29 Leybold Ag Verfahren und vorrichtung zur regelung der reaktiven schichtabscheidung auf substraten mittels magnetronkatoden
US4849087A (en) * 1988-02-11 1989-07-18 Southwall Technologies Apparatus for obtaining transverse uniformity during thin film deposition on extended substrate
JPH0215174A (ja) * 1988-07-01 1990-01-18 Canon Inc マイクロ波プラズマcvd装置
US5082685A (en) * 1989-07-24 1992-01-21 Tdk Corporation Method of conducting plasma treatment
US5047131A (en) * 1989-11-08 1991-09-10 The Boc Group, Inc. Method for coating substrates with silicon based compounds
US5096562A (en) * 1989-11-08 1992-03-17 The Boc Group, Inc. Rotating cylindrical magnetron structure for large area coating
US5045166A (en) * 1990-05-21 1991-09-03 Mcnc Magnetron method and apparatus for producing high density ionic gas discharge
US5262032A (en) * 1991-05-28 1993-11-16 Leybold Aktiengesellschaft Sputtering apparatus with rotating target and target cooling
DE4126236C2 (de) * 1991-08-08 2000-01-05 Leybold Ag Rotierende Magnetron-Kathode und Verwendung einer rotierenden Magnetron-Kathode
JPH0768620B2 (ja) * 1991-09-30 1995-07-26 中外炉工業株式会社 金属ストリップの表面清浄化装置
GB9121665D0 (en) 1991-10-11 1991-11-27 Boc Group Plc Sputtering processes and apparatus
FR2703073B1 (fr) * 1993-03-26 1995-05-05 Lorraine Laminage Procédé et dispositif pour le revêtement en continu d'un matériau métallique en défilement par un dépôt de polymère à gradient de composition, et produit obtenu par ce procédé.
JP3319023B2 (ja) * 1993-04-15 2002-08-26 カシオ電子工業株式会社 記録装置
CA2123479C (en) * 1993-07-01 1999-07-06 Peter A. Sieck Anode structure for magnetron sputtering systems
US5531834A (en) * 1993-07-13 1996-07-02 Tokyo Electron Kabushiki Kaisha Plasma film forming method and apparatus and plasma processing apparatus
US5433786A (en) * 1993-08-27 1995-07-18 The Dow Chemical Company Apparatus for plasma enhanced chemical vapor deposition comprising shower head electrode with magnet disposed therein
TW293983B (de) * 1993-12-17 1996-12-21 Tokyo Electron Co Ltd
DE4418906B4 (de) * 1994-05-31 2004-03-25 Unaxis Deutschland Holding Gmbh Verfahren zum Beschichten eines Substrates und Beschichtungsanlage zu seiner Durchführung
JPH10509773A (ja) * 1995-04-25 1998-09-22 ザ ビーオーシー グループ インコーポレイテッド 基板上に誘電体層を形成するためのスパッタリング装置及び方法
JPH09106899A (ja) * 1995-10-11 1997-04-22 Anelva Corp プラズマcvd装置及び方法並びにドライエッチング装置及び方法
US5743966A (en) * 1996-05-31 1998-04-28 The Boc Group, Inc. Unwinding of plastic film in the presence of a plasma
BE1010420A3 (fr) 1996-07-12 1998-07-07 Cockerill Rech & Dev Procede pour la formation d'un revetement sur un substrat et installation pour la mise en oeuvre de ce procede.
US6110540A (en) * 1996-07-12 2000-08-29 The Boc Group, Inc. Plasma apparatus and method
DE19740793C2 (de) * 1997-09-17 2003-03-20 Bosch Gmbh Robert Verfahren zur Beschichtung von Oberflächen mittels einer Anlage mit Sputterelektroden und Verwendung des Verfahrens
US6055929A (en) * 1997-09-24 2000-05-02 The Dow Chemical Company Magnetron
TW460599B (en) * 1998-01-14 2001-10-21 Toshiba Corp Method for forming fine wiring pattern
US6365010B1 (en) * 1998-11-06 2002-04-02 Scivac Sputtering apparatus and process for high rate coatings
WO2000044207A1 (en) * 1999-01-20 2000-07-27 Nkt Research Center A/S Method for the excitation of a plasma and a use of the method
JP3088721B1 (ja) * 1999-08-11 2000-09-18 キヤノン販売株式会社 不純物処理装置及び不純物処理装置のクリーニング方法
US6462482B1 (en) * 1999-12-02 2002-10-08 Anelva Corporation Plasma processing system for sputter deposition applications
JP3953247B2 (ja) * 2000-01-11 2007-08-08 株式会社日立国際電気 プラズマ処理装置
AU2001273762A1 (en) * 2000-07-03 2002-01-14 Speedel Pharma Ag Process for the preparation of (r)-2-alkyl-3-phenyl-1-propanols
WO2002084702A2 (en) 2001-01-16 2002-10-24 Lampkin Curtis M Sputtering deposition apparatus and method for depositing surface films
SG149680A1 (en) * 2001-12-12 2009-02-27 Semiconductor Energy Lab Film formation apparatus and film formation method and cleaning method
KR100846484B1 (ko) * 2002-03-14 2008-07-17 삼성전자주식회사 Rmim 전극 및 그 제조방법 및 이를 채용하는 스퍼터링장치
US6812648B2 (en) * 2002-10-21 2004-11-02 Guardian Industries Corp. Method of cleaning ion source, and corresponding apparatus/system

Also Published As

Publication number Publication date
EP1579027A1 (de) 2005-09-28
US20070102291A1 (en) 2007-05-10
US7157123B2 (en) 2007-01-02
AU2003304125A1 (en) 2004-12-03
CA2509952A1 (en) 2004-11-25
DE60304745T2 (de) 2007-01-25
US20040163945A1 (en) 2004-08-26
WO2004101844A1 (en) 2004-11-25
JP2006521462A (ja) 2006-09-21
EP1579027B1 (de) 2006-04-19
DE60304745D1 (de) 2006-05-24

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