ATE321106T1 - Cmp systeme und verfahren zur verwendung von aminoenthaltenden polymerisaten - Google Patents
Cmp systeme und verfahren zur verwendung von aminoenthaltenden polymerisatenInfo
- Publication number
- ATE321106T1 ATE321106T1 AT03731907T AT03731907T ATE321106T1 AT E321106 T1 ATE321106 T1 AT E321106T1 AT 03731907 T AT03731907 T AT 03731907T AT 03731907 T AT03731907 T AT 03731907T AT E321106 T1 ATE321106 T1 AT E321106T1
- Authority
- AT
- Austria
- Prior art keywords
- amino
- methods
- amine
- containing polymers
- functional groups
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polyamides (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/051,241 US7004819B2 (en) | 2002-01-18 | 2002-01-18 | CMP systems and methods utilizing amine-containing polymers |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE321106T1 true ATE321106T1 (de) | 2006-04-15 |
Family
ID=21970141
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03731907T ATE321106T1 (de) | 2002-01-18 | 2003-01-13 | Cmp systeme und verfahren zur verwendung von aminoenthaltenden polymerisaten |
Country Status (9)
Country | Link |
---|---|
US (1) | US7004819B2 (de) |
EP (1) | EP1465957B1 (de) |
JP (2) | JP4579545B2 (de) |
KR (1) | KR100948225B1 (de) |
CN (2) | CN100412152C (de) |
AT (1) | ATE321106T1 (de) |
DE (1) | DE60304181T2 (de) |
TW (1) | TWI278498B (de) |
WO (1) | WO2003062338A1 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7524346B2 (en) * | 2002-01-25 | 2009-04-28 | Dupont Air Products Nanomaterials Llc | Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates |
US6776810B1 (en) * | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
US7160807B2 (en) * | 2003-06-30 | 2007-01-09 | Cabot Microelectronics Corporation | CMP of noble metals |
US6869336B1 (en) | 2003-09-18 | 2005-03-22 | Novellus Systems, Inc. | Methods and compositions for chemical mechanical planarization of ruthenium |
US7247567B2 (en) * | 2004-06-16 | 2007-07-24 | Cabot Microelectronics Corporation | Method of polishing a tungsten-containing substrate |
US7582127B2 (en) * | 2004-06-16 | 2009-09-01 | Cabot Microelectronics Corporation | Polishing composition for a tungsten-containing substrate |
JP4292117B2 (ja) * | 2004-07-15 | 2009-07-08 | Jsr株式会社 | 化学機械研磨用水系分散体及び化学機械研磨方法 |
US7161247B2 (en) * | 2004-07-28 | 2007-01-09 | Cabot Microelectronics Corporation | Polishing composition for noble metals |
US7563383B2 (en) | 2004-10-12 | 2009-07-21 | Cabot Mircroelectronics Corporation | CMP composition with a polymer additive for polishing noble metals |
US20060084271A1 (en) * | 2004-10-20 | 2006-04-20 | Yang Andy C | Systems, methods and slurries for chemical mechanical polishing |
US7504044B2 (en) | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
US7531105B2 (en) * | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
JP5563269B2 (ja) * | 2009-10-09 | 2014-07-30 | 四日市合成株式会社 | ガラスポリッシング加工用組成物 |
JP4772156B1 (ja) * | 2010-07-05 | 2011-09-14 | 花王株式会社 | シリコンウエハ用研磨液組成物 |
JP5925454B2 (ja) | 2010-12-16 | 2016-05-25 | 花王株式会社 | 磁気ディスク基板用研磨液組成物 |
WO2012103091A2 (en) * | 2011-01-24 | 2012-08-02 | Clarkson University | Abrasive free silicon chemical mechanical planarization |
US8665559B2 (en) * | 2012-03-19 | 2014-03-04 | Hewlett-Packard Development Company, L.P. | Magnetic head |
CN104647197B (zh) * | 2013-11-22 | 2019-01-04 | 安集微电子(上海)有限公司 | 一种用于抛光钽的化学机械抛光方法 |
WO2016140246A1 (ja) * | 2015-03-04 | 2016-09-09 | 日立化成株式会社 | Cmp用研磨液、及び、これを用いた研磨方法 |
US10221336B2 (en) | 2017-06-16 | 2019-03-05 | rohm and Hass Electronic Materials CMP Holdings, Inc. | Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them |
US10316218B2 (en) * | 2017-08-30 | 2019-06-11 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them |
US10815392B2 (en) | 2018-05-03 | 2020-10-27 | Rohm and Haas Electronic CMP Holdings, Inc. | Chemical mechanical polishing method for tungsten |
US10640681B1 (en) | 2018-10-20 | 2020-05-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for tungsten |
US10597558B1 (en) | 2018-10-20 | 2020-03-24 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for tungsten |
Family Cites Families (43)
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US4462188A (en) * | 1982-06-21 | 1984-07-31 | Nalco Chemical Company | Silica sol compositions for polishing silicon wafers |
US4452643A (en) | 1983-01-12 | 1984-06-05 | Halliburton Company | Method of removing copper and copper oxide from a ferrous metal surface |
JPS617393A (ja) * | 1984-06-21 | 1986-01-14 | Nippon Kokan Kk <Nkk> | 切削、研削加工および引抜加工用水溶性組成物 |
US4671851A (en) | 1985-10-28 | 1987-06-09 | International Business Machines Corporation | Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique |
US4789648A (en) | 1985-10-28 | 1988-12-06 | International Business Machines Corporation | Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias |
US4944836A (en) | 1985-10-28 | 1990-07-31 | International Business Machines Corporation | Chem-mech polishing method for producing coplanar metal/insulator films on a substrate |
US4956313A (en) | 1987-08-17 | 1990-09-11 | International Business Machines Corporation | Via-filling and planarization technique |
US4910155A (en) | 1988-10-28 | 1990-03-20 | International Business Machines Corporation | Wafer flood polishing |
US5352277A (en) | 1988-12-12 | 1994-10-04 | E. I. Du Pont De Nemours & Company | Final polishing composition |
US5137544A (en) | 1990-04-10 | 1992-08-11 | Rockwell International Corporation | Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing |
JPH0781132B2 (ja) | 1990-08-29 | 1995-08-30 | 株式会社フジミインコーポレーテッド | 研磨剤組成物 |
US5244534A (en) | 1992-01-24 | 1993-09-14 | Micron Technology, Inc. | Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs |
US5225034A (en) | 1992-06-04 | 1993-07-06 | Micron Technology, Inc. | Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing |
US5209816A (en) | 1992-06-04 | 1993-05-11 | Micron Technology, Inc. | Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing |
US5391258A (en) | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
US5340370A (en) | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
EP0686684A1 (de) * | 1994-06-06 | 1995-12-13 | Bayer Ag | Sägesuspension |
JP3397501B2 (ja) | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
US5527423A (en) | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
US5860848A (en) * | 1995-06-01 | 1999-01-19 | Rodel, Inc. | Polishing silicon wafers with improved polishing slurries |
US5741626A (en) | 1996-04-15 | 1998-04-21 | Motorola, Inc. | Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC) |
AU733839B2 (en) * | 1996-08-20 | 2001-05-24 | Rohm And Haas Company | Aqueous polish compositions containing acid-amine latexes |
US5876490A (en) * | 1996-12-09 | 1999-03-02 | International Business Machines Corporatin | Polish process and slurry for planarization |
US6099604A (en) | 1997-08-21 | 2000-08-08 | Micron Technology, Inc. | Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto |
US5968280A (en) | 1997-11-12 | 1999-10-19 | International Business Machines Corporation | Method for cleaning a surface |
JP4052607B2 (ja) * | 1998-04-20 | 2008-02-27 | 株式会社東芝 | 研磨剤及び半導体基板のポリッシング方法 |
JP2000109802A (ja) * | 1998-10-08 | 2000-04-18 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
US6290736B1 (en) | 1999-02-09 | 2001-09-18 | Sharp Laboratories Of America, Inc. | Chemically active slurry for the polishing of noble metals and method for same |
JP4171858B2 (ja) * | 1999-06-23 | 2008-10-29 | Jsr株式会社 | 研磨用組成物および研磨方法 |
EP1218464B1 (de) | 1999-08-13 | 2008-08-20 | Cabot Microelectronics Corporation | Chemisch-mechanische poliersysteme und verfahren zu ihrer verwendung |
ATE292167T1 (de) | 1999-08-13 | 2005-04-15 | Cabot Microelectronics Corp | Poliersystem mit stopmittel und verfahren zu seiner verwendung |
DE60006135T2 (de) | 1999-08-24 | 2004-07-08 | Rodel Holdings, Inc., Wilmington | Zusammensetzung und verfahren zum chemisch-mechanischen polieren von isolatoren und metallen |
TWI265567B (en) | 1999-08-26 | 2006-11-01 | Hitachi Chemical Co Ltd | Polishing medium for chemical-mechanical polishing, and polishing method |
JP2001139937A (ja) * | 1999-11-11 | 2001-05-22 | Hitachi Chem Co Ltd | 金属用研磨液及び研磨方法 |
EP1118647A1 (de) | 2000-01-18 | 2001-07-25 | Praxair S.T. Technology, Inc. | Polieraufschlämmung |
JP2001259998A (ja) * | 2000-03-02 | 2001-09-25 | Three M Innovative Properties Co | 親水性塗膜表面欠陥の補修及び艶出し方法 |
JP2002110595A (ja) * | 2000-09-29 | 2002-04-12 | Hitachi Ltd | 配線形成方法、研磨方法及び半導体装置の製造方法 |
TWI281493B (en) * | 2000-10-06 | 2007-05-21 | Mitsui Mining & Smelting Co | Polishing material |
JP3816743B2 (ja) * | 2000-11-24 | 2006-08-30 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
US6612911B2 (en) * | 2001-01-16 | 2003-09-02 | Cabot Microelectronics Corporation | Alkali metal-containing polishing system and method |
US7160432B2 (en) * | 2001-03-14 | 2007-01-09 | Applied Materials, Inc. | Method and composition for polishing a substrate |
JP2002299292A (ja) * | 2001-03-29 | 2002-10-11 | Asahi Kasei Corp | 金属研磨用組成物 |
US6632259B2 (en) * | 2001-05-18 | 2003-10-14 | Rodel Holdings, Inc. | Chemical mechanical polishing compositions and methods relating thereto |
-
2002
- 2002-01-18 US US10/051,241 patent/US7004819B2/en not_active Expired - Lifetime
-
2003
- 2003-01-13 CN CNB038024454A patent/CN100412152C/zh not_active Expired - Lifetime
- 2003-01-13 WO PCT/US2003/000822 patent/WO2003062338A1/en active IP Right Grant
- 2003-01-13 DE DE60304181T patent/DE60304181T2/de not_active Expired - Lifetime
- 2003-01-13 JP JP2003562207A patent/JP4579545B2/ja not_active Expired - Fee Related
- 2003-01-13 KR KR1020047011083A patent/KR100948225B1/ko active IP Right Grant
- 2003-01-13 AT AT03731907T patent/ATE321106T1/de not_active IP Right Cessation
- 2003-01-13 EP EP03731907A patent/EP1465957B1/de not_active Expired - Lifetime
- 2003-01-13 CN CN2008101305069A patent/CN101318309B/zh not_active Expired - Lifetime
- 2003-01-15 TW TW092100773A patent/TWI278498B/zh not_active IP Right Cessation
-
2009
- 2009-08-06 JP JP2009183386A patent/JP5378906B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1620488A (zh) | 2005-05-25 |
JP2009285828A (ja) | 2009-12-10 |
CN101318309A (zh) | 2008-12-10 |
US20030139116A1 (en) | 2003-07-24 |
DE60304181D1 (de) | 2006-05-11 |
CN101318309B (zh) | 2010-07-14 |
EP1465957A1 (de) | 2004-10-13 |
DE60304181T2 (de) | 2006-12-28 |
TWI278498B (en) | 2007-04-11 |
JP5378906B2 (ja) | 2013-12-25 |
TW200302244A (en) | 2003-08-01 |
CN100412152C (zh) | 2008-08-20 |
KR100948225B1 (ko) | 2010-03-18 |
JP2005515646A (ja) | 2005-05-26 |
US7004819B2 (en) | 2006-02-28 |
WO2003062338A1 (en) | 2003-07-31 |
EP1465957B1 (de) | 2006-03-22 |
JP4579545B2 (ja) | 2010-11-10 |
KR20040081458A (ko) | 2004-09-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |