ATE306730T1 - Herstellungsverfahren eines vcsel mit dielektrischem spiegel und selbsteinrichtender verstärkungsführung - Google Patents

Herstellungsverfahren eines vcsel mit dielektrischem spiegel und selbsteinrichtender verstärkungsführung

Info

Publication number
ATE306730T1
ATE306730T1 AT02746507T AT02746507T ATE306730T1 AT E306730 T1 ATE306730 T1 AT E306730T1 AT 02746507 T AT02746507 T AT 02746507T AT 02746507 T AT02746507 T AT 02746507T AT E306730 T1 ATE306730 T1 AT E306730T1
Authority
AT
Austria
Prior art keywords
aperture area
depositing
dielectric material
vcsel
self
Prior art date
Application number
AT02746507T
Other languages
English (en)
Inventor
Richard A Skogman
Original Assignee
Finisar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Finisar Corp filed Critical Finisar Corp
Application granted granted Critical
Publication of ATE306730T1 publication Critical patent/ATE306730T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Weting (AREA)
AT02746507T 2001-06-14 2002-06-13 Herstellungsverfahren eines vcsel mit dielektrischem spiegel und selbsteinrichtender verstärkungsführung ATE306730T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/881,167 US6975661B2 (en) 2001-06-14 2001-06-14 Method and apparatus for producing VCSELS with dielectric mirrors and self-aligned gain guide
PCT/US2002/018587 WO2002103864A2 (en) 2001-06-14 2002-06-13 Vcsels with dielectric mirror and self-aligned gain guide and method of production

Publications (1)

Publication Number Publication Date
ATE306730T1 true ATE306730T1 (de) 2005-10-15

Family

ID=25377906

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02746507T ATE306730T1 (de) 2001-06-14 2002-06-13 Herstellungsverfahren eines vcsel mit dielektrischem spiegel und selbsteinrichtender verstärkungsführung

Country Status (9)

Country Link
US (1) US6975661B2 (de)
EP (1) EP1413026B1 (de)
JP (1) JP2004531896A (de)
KR (1) KR20040010719A (de)
AT (1) ATE306730T1 (de)
DE (1) DE60206633T2 (de)
HK (1) HK1066104A1 (de)
TW (1) TW589771B (de)
WO (1) WO2002103864A2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2379797A (en) * 2001-09-15 2003-03-19 Zarlink Semiconductor Ab Surface Emitting Laser
JP4236840B2 (ja) * 2001-12-25 2009-03-11 富士フイルム株式会社 半導体レーザ素子
JP3729263B2 (ja) * 2002-09-25 2005-12-21 セイコーエプソン株式会社 面発光型半導体レーザおよびその製造方法、光モジュール、光伝達装置
JP4576986B2 (ja) * 2004-11-10 2010-11-10 セイコーエプソン株式会社 光素子
JP4581635B2 (ja) * 2004-11-10 2010-11-17 セイコーエプソン株式会社 光素子
US20060165143A1 (en) * 2005-01-24 2006-07-27 Matsushita Electric Industrial Co., Ltd. Nitride semiconductor laser device and manufacturing method thereof
KR100794673B1 (ko) * 2005-12-06 2008-01-14 한국전자통신연구원 수직 공진 표면 발광 레이저 다이오드의 ｄｂｒ 구조물 및그 제조방법과 수직 공진 표면 발광 레이저 다이오드
US7369595B2 (en) 2005-12-06 2008-05-06 Electronics And Telecommunications Research Institute Distributed Bragg reflector (DBR) structure in vertical cavity surface emitting laser (VCSEL) diode, method of manufacturing the same, and VCSEL diode
KR100794667B1 (ko) * 2005-12-06 2008-01-14 한국전자통신연구원 수직 공진 표면 발광 레이저 다이오드의 ｄｂｒ 구조물 및그 제조방법과 수직 공진 표면 발광 레이저 다이오드
US8559127B2 (en) 2010-12-22 2013-10-15 Seagate Technology Llc Integrated heat assisted magnetic recording head with extended cavity vertical cavity surface emitting laser diode
US8451695B2 (en) 2011-06-23 2013-05-28 Seagate Technology Llc Vertical cavity surface emitting laser with integrated mirror and waveguide
KR102050502B1 (ko) 2013-03-18 2020-01-08 삼성전자주식회사 하이브리드 수직 공진 레이저 및 그 제조방법
DE102013103601A1 (de) 2013-04-10 2014-10-16 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
US9625647B2 (en) 2014-01-29 2017-04-18 The University Of Connecticut Optoelectronic integrated circuit

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US5537666A (en) 1990-09-12 1996-07-16 Seiko Epson Coropration Surface emission type semiconductor laser
US5115441A (en) 1991-01-03 1992-05-19 At&T Bell Laboratories Vertical cavity surface emmitting lasers with transparent electrodes
US5283447A (en) * 1992-01-21 1994-02-01 Bandgap Technology Corporation Integration of transistors with vertical cavity surface emitting lasers
US5390210A (en) 1993-11-22 1995-02-14 Hewlett-Packard Company Semiconductor laser that generates second harmonic light with attached nonlinear crystal
US5719891A (en) 1995-12-18 1998-02-17 Picolight Incorporated Conductive element with lateral oxidation barrier
US6014400A (en) 1996-09-02 2000-01-11 Matsushita Electric Industrial Co., Ltd Surface-emitting laser and a fabrication method thereof
JPH10173294A (ja) 1996-10-07 1998-06-26 Canon Inc 窒素を含む化合物半導体多層膜ミラー及びそれを用いた面型発光デバイス
US6031243A (en) 1996-10-16 2000-02-29 Geoff W. Taylor Grating coupled vertical cavity optoelectronic devices
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Also Published As

Publication number Publication date
EP1413026B1 (de) 2005-10-12
HK1066104A1 (en) 2005-03-11
KR20040010719A (ko) 2004-01-31
JP2004531896A (ja) 2004-10-14
US20020191659A1 (en) 2002-12-19
TW589771B (en) 2004-06-01
DE60206633T2 (de) 2006-07-13
EP1413026A2 (de) 2004-04-28
DE60206633D1 (de) 2005-11-17
WO2002103864A2 (en) 2002-12-27
US6975661B2 (en) 2005-12-13
WO2002103864A3 (en) 2004-02-19

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