ATE273585T1 - Spannungsgesteuerter ringoszillator mit hoher rauschunterdrückung - Google Patents

Spannungsgesteuerter ringoszillator mit hoher rauschunterdrückung

Info

Publication number
ATE273585T1
ATE273585T1 AT01903189T AT01903189T ATE273585T1 AT E273585 T1 ATE273585 T1 AT E273585T1 AT 01903189 T AT01903189 T AT 01903189T AT 01903189 T AT01903189 T AT 01903189T AT E273585 T1 ATE273585 T1 AT E273585T1
Authority
AT
Austria
Prior art keywords
supply terminal
power supply
differential
current source
ring oscillator
Prior art date
Application number
AT01903189T
Other languages
English (en)
Inventor
Bin Liu
Original Assignee
Broadcom Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Broadcom Corp filed Critical Broadcom Corp
Application granted granted Critical
Publication of ATE273585T1 publication Critical patent/ATE273585T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45636—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedback means
    • H03F3/45641—Measuring at the loading circuit of the differential amplifier
    • H03F3/4565—Controlling the common source circuit of the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/023—Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
    • H03K3/0231—Astable circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/03—Astable circuits
    • H03K3/0315—Ring oscillators
    • H03K3/0322—Ring oscillators with differential cells
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
    • H03K5/133—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals using a chain of active delay devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/08—Details of the phase-locked loop
    • H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
    • H03L7/0995—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop the oscillator comprising a ring oscillator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7203—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch in the bias circuit of the amplifier controlling a bias current in the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K2005/00013—Delay, i.e. output pulse is delayed after input pulse and pulse length of output pulse is dependent on pulse length of input pulse
    • H03K2005/0015—Layout of the delay element
    • H03K2005/00195—Layout of the delay element using FET's
    • H03K2005/00208—Layout of the delay element using FET's using differential stages

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Ignition Installations For Internal Combustion Engines (AREA)
  • Details Of Television Scanning (AREA)
  • Amplifiers (AREA)
AT01903189T 2000-02-17 2001-01-22 Spannungsgesteuerter ringoszillator mit hoher rauschunterdrückung ATE273585T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/507,114 US6414557B1 (en) 2000-02-17 2000-02-17 High noise rejection voltage-controlled ring oscillator architecture
PCT/US2001/001987 WO2001061853A1 (en) 2000-02-17 2001-01-22 High noise rejection voltage-controlled ring oscillator architecture

Publications (1)

Publication Number Publication Date
ATE273585T1 true ATE273585T1 (de) 2004-08-15

Family

ID=24017311

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01903189T ATE273585T1 (de) 2000-02-17 2001-01-22 Spannungsgesteuerter ringoszillator mit hoher rauschunterdrückung

Country Status (6)

Country Link
US (4) US6414557B1 (de)
EP (1) EP1266453B1 (de)
AT (1) ATE273585T1 (de)
AU (1) AU2001231038A1 (de)
DE (1) DE60104826T2 (de)
WO (1) WO2001061853A1 (de)

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US6414557B1 (en) * 2000-02-17 2002-07-02 Broadcom Corporation High noise rejection voltage-controlled ring oscillator architecture
US6717478B1 (en) * 2001-04-09 2004-04-06 Silicon Image Multi-phase voltage controlled oscillator (VCO) with common mode control
US6642802B2 (en) * 2001-12-20 2003-11-04 Bae Systems Information And Electronic Systems Integration, Inc. Ring oscillator providing single event transient immunity
US6617888B2 (en) * 2002-01-02 2003-09-09 Intel Corporation Low supply voltage differential signal driver
WO2003100973A2 (en) * 2002-05-28 2003-12-04 Igor Anatolievich Abrosimov Reference voltage generator for logic elements providing stable and predefined gate propagation time
DE60307592T2 (de) * 2003-03-26 2007-08-16 Telefonaktiebolaget Lm Ericsson (Publ) Zufallsfolgegenerator
JP4550805B2 (ja) * 2003-03-26 2010-09-22 テレフオンアクチーボラゲット エル エム エリクソン（パブル） ランダムシーケンス発生器
US7116147B2 (en) * 2004-10-18 2006-10-03 Freescale Semiconductor, Inc. Circuit and method for interpolative delay
US7498858B2 (en) * 2004-11-01 2009-03-03 Hewlett-Packard Development Company, L.P. Interpolator systems with linearity adjustments and related methods
US7502880B2 (en) * 2005-07-11 2009-03-10 Via Technologies, Inc. Apparatus and method for quad-pumped address bus
US7230499B2 (en) * 2005-07-18 2007-06-12 Dialog Semiconductor Gmbh Ring oscillator with constant 50% duty cycle and ground-noise insensitive
US7330060B2 (en) * 2005-09-07 2008-02-12 Agere Systems Inc. Method and apparatus for sigma-delta delay control in a delay-locked-loop
JP2007088191A (ja) * 2005-09-22 2007-04-05 Oki Electric Ind Co Ltd 半導体集積回路
US7545195B2 (en) * 2006-11-14 2009-06-09 Avago Technologies Enterprise IP (Singapore) Pte. Ltd. Variable delay element
US7977992B2 (en) * 2006-11-14 2011-07-12 Avago Technologies Enterprise IP (Singapore) Pte. Ltd. Precision phase generator and method for phase generation
US7532078B2 (en) * 2007-02-09 2009-05-12 International Business Machines Corporation Scannable virtual rail method and ring oscillator circuit for measuring variations in device characteristics
US7786750B2 (en) * 2007-03-15 2010-08-31 Agere Systems Inc. Methods and apparatus for compensating for skew in a differential signal using non-complementary inverters
DE102007059231A1 (de) * 2007-12-07 2009-06-10 Polyic Gmbh & Co. Kg Elektronikbaugruppe mit organischen Schaltelementen
US8786359B2 (en) * 2007-12-12 2014-07-22 Sandisk Technologies Inc. Current mirror device and method
KR101559501B1 (ko) * 2009-04-08 2015-10-15 삼성전자주식회사 지터를 보상하는 반도체 집적 회로 및 지터 보상 방법
JP5302235B2 (ja) * 2010-02-09 2013-10-02 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US8207763B1 (en) * 2010-06-29 2012-06-26 The United States Of America As Represented By The Secretary Of The Navy Non-linear channelizer device with wideband, high-frequency operation and channel reconfigurability
US9774181B2 (en) 2012-03-16 2017-09-26 Hubbell Incorporated Enhanced auto-monitoring circuit and method for an electrical device
US9041370B2 (en) 2012-07-09 2015-05-26 Silanna Semiconductor U.S.A., Inc. Charge pump regulator circuit with a variable drive voltage ring oscillator
US9081399B2 (en) * 2012-07-09 2015-07-14 Silanna Semiconductor U.S.A., Inc. Charge pump regulator circuit with variable amplitude control
CN112368956B (zh) * 2018-07-11 2022-07-22 华为技术有限公司 产生信号的装置、方法和系统
US11923804B2 (en) 2019-08-21 2024-03-05 Geegah, Llc CMOS integrated temperature insensitive, stable, and calibrated oscillator
CN111600606B (zh) * 2020-06-18 2023-05-23 中国科学院微电子研究所 一种用于时间交织采样adc的多相位时钟产生电路

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Also Published As

Publication number Publication date
US6963251B2 (en) 2005-11-08
WO2001061853A1 (en) 2001-08-23
US20040066242A1 (en) 2004-04-08
US6414557B1 (en) 2002-07-02
EP1266453A1 (de) 2002-12-18
DE60104826D1 (de) 2004-09-16
EP1266453B1 (de) 2004-08-11
US6828866B2 (en) 2004-12-07
AU2001231038A1 (en) 2001-08-27
DE60104826T2 (de) 2005-09-15
US20020118072A1 (en) 2002-08-29
US6657503B2 (en) 2003-12-02
US20050068114A1 (en) 2005-03-31

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Legal Events

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