ATE261613T1 - Bipolarer transistor und herstellungsverfahren - Google Patents

Bipolarer transistor und herstellungsverfahren

Info

Publication number
ATE261613T1
ATE261613T1 AT93302685T AT93302685T ATE261613T1 AT E261613 T1 ATE261613 T1 AT E261613T1 AT 93302685 T AT93302685 T AT 93302685T AT 93302685 T AT93302685 T AT 93302685T AT E261613 T1 ATE261613 T1 AT E261613T1
Authority
AT
Austria
Prior art keywords
bipolar transistor
production method
transistor
utilised
epitaxy
Prior art date
Application number
AT93302685T
Other languages
English (en)
Inventor
Peter Charles Hunt
Original Assignee
Texas Instruments Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Ltd filed Critical Texas Instruments Ltd
Application granted granted Critical
Publication of ATE261613T1 publication Critical patent/ATE261613T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors
AT93302685T 1992-04-06 1993-04-06 Bipolarer transistor und herstellungsverfahren ATE261613T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB929207472A GB9207472D0 (en) 1992-04-06 1992-04-06 High performance process technology

Publications (1)

Publication Number Publication Date
ATE261613T1 true ATE261613T1 (de) 2004-03-15

Family

ID=10713514

Family Applications (1)

Application Number Title Priority Date Filing Date
AT93302685T ATE261613T1 (de) 1992-04-06 1993-04-06 Bipolarer transistor und herstellungsverfahren

Country Status (5)

Country Link
US (1) US5528066A (de)
EP (1) EP0568206B1 (de)
AT (1) ATE261613T1 (de)
DE (1) DE69333446T2 (de)
GB (1) GB9207472D0 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2825169B2 (ja) * 1990-09-17 1998-11-18 キヤノン株式会社 半導体装置
JP2008117881A (ja) * 2006-11-02 2008-05-22 Sanyo Electric Co Ltd 半導体装置及びその製造方法
US9425298B2 (en) 2015-01-22 2016-08-23 International Business Machines Corporation Lateral bipolar transistor

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE758683A (fr) * 1969-11-10 1971-05-10 Ibm Procede de fabrication d'un dispositif monolithique auto-isolant et structure de transistor a socle
US4120707A (en) * 1977-03-30 1978-10-17 Harris Corporation Process of fabricating junction isolated IGFET and bipolar transistor integrated circuit by diffusion
JPS5871655A (ja) * 1981-10-23 1983-04-28 Toshiba Corp 半導体装置
US4573256A (en) * 1983-08-26 1986-03-04 International Business Machines Corporation Method for making a high performance transistor integrated circuit
US4966865A (en) * 1987-02-05 1990-10-30 Texas Instruments Incorporated Method for planarization of a semiconductor device prior to metallization
JP2590236B2 (ja) * 1987-10-07 1997-03-12 株式会社日立製作所 半導体装置
US5011784A (en) * 1988-01-21 1991-04-30 Exar Corporation Method of making a complementary BiCMOS process with isolated vertical PNP transistors
JPH027529A (ja) * 1988-06-27 1990-01-11 Nec Corp バイポーラトランジスタ及びその製造方法
DE68925116T2 (de) * 1989-06-28 1996-05-09 Sgs Thomson Microelectronics In gemischter Technologie hergestellte integrierte Schaltung mit CMOS-Strukturen und leistungsfähigen lateralen Bipolartransistoren mit erhöhter Early-Spannung und Herstellungsverfahren dafür
JPH03152939A (ja) * 1989-11-09 1991-06-28 Toshiba Corp 半導体集積回路装置
JP3126766B2 (ja) * 1990-12-07 2001-01-22 三菱電機株式会社 半導体装置およびその製造方法
US5358883A (en) * 1992-02-03 1994-10-25 Motorola, Inc. Lateral bipolar transistor

Also Published As

Publication number Publication date
EP0568206A3 (en) 1994-08-17
DE69333446D1 (de) 2004-04-15
DE69333446T2 (de) 2005-01-20
GB9207472D0 (en) 1992-05-20
EP0568206A2 (de) 1993-11-03
EP0568206B1 (de) 2004-03-10
US5528066A (en) 1996-06-18

Similar Documents

Publication Publication Date Title
EP0271942A3 (de) MOS Leistungsstruktur mit Schutzvorrichtung gegen Überspannungen und Verfahren zu ihrer Herstellung
EP0189208A3 (de) MOS-Transistor mit höherer Spannungsfestigkeit
JPS5559767A (en) Semiconductor device, method of fabricating the same and application thereof
JPS55611A (en) Constant current circuit
JPS54132753A (en) Referential voltage generator and its application
ATE67617T1 (de) Integrierte schaltung in komplementaerer schaltungstechnik mit einem substratvorspannungs- generator.
ATE261613T1 (de) Bipolarer transistor und herstellungsverfahren
EP0337823A3 (de) MOS-Feldeffekttransistor mit hoher Durchbruchspannung
EP0292327A3 (de) Schutzschaltungen gegen elektrostatischen Durchbruch
JPS5382179A (en) Field effect transistor
ATE77021T1 (de) Aktive filterschaltungen.
JPS52154383A (en) Semiconductor integrated circuit device
JPS5322378A (en) Production of field effect transistor s
SE9901345D0 (sv) CMOS process
JPS542682A (en) Manufacture of mos-type integrated circuit
JPS6447064A (en) Semiconductor device
JPS5593325A (en) Precharge circuit of mos transistor
JPS5515511A (en) Constant current circuit
JPS5368986A (en) Mos type transistor
JPS5541141A (en) Semiconductor rectification circuit
JPS61118074U (de)
JPS54146545A (en) Constant current integrated circuit element
KR910008808A (ko) 레치-업 현상을 방지할 수 있는 바이폴라-씨모스의 제조방법
JPS55608A (en) Bias circuit
JPS52153113A (en) Rotation change-over circuit for motor

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties