ATE25796T1 - Ladungsgekoppelte halbleiter-anordnung und bildsensor mit hoher informationsdichte. - Google Patents

Ladungsgekoppelte halbleiter-anordnung und bildsensor mit hoher informationsdichte.

Info

Publication number
ATE25796T1
ATE25796T1 AT84200773T AT84200773T ATE25796T1 AT E25796 T1 ATE25796 T1 AT E25796T1 AT 84200773 T AT84200773 T AT 84200773T AT 84200773 T AT84200773 T AT 84200773T AT E25796 T1 ATE25796 T1 AT E25796T1
Authority
AT
Austria
Prior art keywords
image sensor
information density
charge coupled
high information
semiconductor arrangement
Prior art date
Application number
AT84200773T
Other languages
English (en)
Inventor
Arnoldus Johannes J Boudewijns
Holstlaan
Marnix Guillaume Collet
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of ATE25796T1 publication Critical patent/ATE25796T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745—Circuitry for generating timing or clock signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
  • Vehicle Body Suspensions (AREA)
  • Amplifiers (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
AT84200773T 1983-06-03 1984-05-29 Ladungsgekoppelte halbleiter-anordnung und bildsensor mit hoher informationsdichte. ATE25796T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8301977A NL8301977A (nl) 1983-06-03 1983-06-03 Ladinggekoppelde beeldopneeminrichting en geheugeninrichting met hoge bitdichtheid.
EP84200773A EP0128615B1 (de) 1983-06-03 1984-05-29 Ladungsgekoppelte Halbleiter-Anordnung und Bildsensor mit hoher Informationsdichte

Publications (1)

Publication Number Publication Date
ATE25796T1 true ATE25796T1 (de) 1987-03-15

Family

ID=19841950

Family Applications (1)

Application Number Title Priority Date Filing Date
AT84200773T ATE25796T1 (de) 1983-06-03 1984-05-29 Ladungsgekoppelte halbleiter-anordnung und bildsensor mit hoher informationsdichte.

Country Status (10)

Country Link
US (1) US4868855A (de)
EP (1) EP0128615B1 (de)
JP (1) JPS6012768A (de)
AT (1) ATE25796T1 (de)
AU (1) AU565528B2 (de)
DE (1) DE3462570D1 (de)
ES (1) ES8506415A1 (de)
HK (1) HK35388A (de)
NL (1) NL8301977A (de)
SG (1) SG9388G (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8401312A (nl) * 1984-04-24 1985-11-18 Philips Nv Ladingsgekoppelde inrichting.
NL8501210A (nl) * 1985-04-29 1986-11-17 Philips Nv Ladingsgekoppelde inrichting.
NL8603008A (nl) * 1986-11-27 1988-06-16 Philips Nv Ccd-beeldopneeminrichting.
NL8603007A (nl) * 1986-11-27 1988-06-16 Philips Nv Ladingsgekoppelde inrichting.
EP0358260A1 (de) * 1988-08-29 1990-03-14 Koninklijke Philips Electronics N.V. Ansteuerschieberegister für einen Feststoffbildsensor
US5325412A (en) * 1989-05-23 1994-06-28 U.S. Philips Corporation Charge-coupled device, image sensor arrangement and camera provided with such an image sensor arrangement
JP2736121B2 (ja) * 1989-07-12 1998-04-02 株式会社東芝 電荷転送装置及び固体撮像装置
JPH05130525A (ja) * 1991-11-07 1993-05-25 Fuji Film Micro Device Kk 固体撮像装置とその駆動方法
US5444280A (en) * 1993-12-20 1995-08-22 Scientific Imaging Technologies, Inc. Photodetector comprising avalanche photosensing layer and interline CCD readout layer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3909803A (en) * 1972-11-02 1975-09-30 Ibm Multi-phase CCD shift register optical sensor with high resolution
US3931463A (en) * 1974-07-23 1976-01-06 Rca Corporation Scene brightness compensation system with charge transfer imager
US3932775A (en) * 1974-07-25 1976-01-13 Rca Corporation Interlaced readout of charge stored in a charge coupled image sensing array
JPS596111B2 (ja) * 1977-11-30 1984-02-09 株式会社東芝 エリアセンサ
US4178614A (en) * 1978-08-24 1979-12-11 Rca Corporation Readout of a densely packed CCD
JPS58188156A (ja) * 1982-04-27 1983-11-02 Matsushita Electric Ind Co Ltd 固体撮像装置
JPS5966277A (ja) * 1982-10-07 1984-04-14 Toshiba Corp 固体イメ−ジセンサ

Also Published As

Publication number Publication date
ES532999A0 (es) 1985-07-01
SG9388G (en) 1988-07-01
NL8301977A (nl) 1985-01-02
AU2893384A (en) 1984-12-06
DE3462570D1 (en) 1987-04-09
HK35388A (en) 1988-05-20
EP0128615B1 (de) 1987-03-04
ES8506415A1 (es) 1985-07-01
AU565528B2 (en) 1987-09-17
JPS6012768A (ja) 1985-01-23
EP0128615A1 (de) 1984-12-19
US4868855A (en) 1989-09-19

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee