ATE240585T1 - Plasmavorrichtung mit einem mit einer spannungsquelle verbundenen metallteil, das zwischen einer rf-plasma-anregungsquelle und dem plasma angeordnet ist - Google Patents
Plasmavorrichtung mit einem mit einer spannungsquelle verbundenen metallteil, das zwischen einer rf-plasma-anregungsquelle und dem plasma angeordnet istInfo
- Publication number
- ATE240585T1 ATE240585T1 AT98966132T AT98966132T ATE240585T1 AT E240585 T1 ATE240585 T1 AT E240585T1 AT 98966132 T AT98966132 T AT 98966132T AT 98966132 T AT98966132 T AT 98966132T AT E240585 T1 ATE240585 T1 AT E240585T1
- Authority
- AT
- Austria
- Prior art keywords
- plasma
- window
- plate
- metal part
- part connected
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Primary Cells (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/001,512 US6280563B1 (en) | 1997-12-31 | 1997-12-31 | Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma |
PCT/US1998/027885 WO1999034399A1 (en) | 1997-12-31 | 1998-12-31 | Plasma device including a powered non-magnetic metal member between a plasma ac excitation source and the plasma |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE240585T1 true ATE240585T1 (de) | 2003-05-15 |
Family
ID=21696416
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT98966132T ATE240585T1 (de) | 1997-12-31 | 1998-12-31 | Plasmavorrichtung mit einem mit einer spannungsquelle verbundenen metallteil, das zwischen einer rf-plasma-anregungsquelle und dem plasma angeordnet ist |
Country Status (10)
Country | Link |
---|---|
US (1) | US6280563B1 (de) |
EP (1) | EP1044459B1 (de) |
JP (1) | JP4709376B2 (de) |
KR (1) | KR100630885B1 (de) |
AT (1) | ATE240585T1 (de) |
AU (1) | AU2210299A (de) |
DE (1) | DE69814687T2 (de) |
IL (1) | IL137070A (de) |
TW (1) | TW423020B (de) |
WO (1) | WO1999034399A1 (de) |
Families Citing this family (62)
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GB9714341D0 (en) * | 1997-07-09 | 1997-09-10 | Surface Tech Sys Ltd | Plasma processing apparatus |
JP3385528B2 (ja) * | 1999-07-06 | 2003-03-10 | 日本電気株式会社 | ドライエッチング装置とドライエッチング方法 |
US6447637B1 (en) * | 1999-07-12 | 2002-09-10 | Applied Materials Inc. | Process chamber having a voltage distribution electrode |
US6564810B1 (en) * | 2000-03-28 | 2003-05-20 | Asm America | Cleaning of semiconductor processing chambers |
CN1230042C (zh) * | 2000-03-31 | 2005-11-30 | 拉姆研究公司 | 感应耦合等离子体腐蚀装置 |
US6531030B1 (en) * | 2000-03-31 | 2003-03-11 | Lam Research Corp. | Inductively coupled plasma etching apparatus |
US6422173B1 (en) * | 2000-06-30 | 2002-07-23 | Lam Research Corporation | Apparatus and methods for actively controlling RF peak-to-peak voltage in an inductively coupled plasma etching system |
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US6685798B1 (en) * | 2000-07-06 | 2004-02-03 | Applied Materials, Inc | Plasma reactor having a symmetrical parallel conductor coil antenna |
US6716303B1 (en) | 2000-10-13 | 2004-04-06 | Lam Research Corporation | Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same |
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EP2050839A3 (de) * | 2002-03-08 | 2009-05-13 | Canon Anelva Corporation | Verfahren und Vorrichtung zum Herstellen von Metall-Schichten |
KR100879325B1 (ko) * | 2002-03-11 | 2009-01-19 | 가부시키가이샤 히다치 하이테크놀로지즈 | 플라즈마처리방법 및 처리장치 |
JP4013674B2 (ja) * | 2002-07-11 | 2007-11-28 | 松下電器産業株式会社 | プラズマドーピング方法及び装置 |
JP2004055600A (ja) * | 2002-07-16 | 2004-02-19 | Tokyo Electron Ltd | プラズマ処理装置 |
US20040040662A1 (en) * | 2002-08-28 | 2004-03-04 | Manabu Edamura | Plasma processing method and apparatus for etching nonvolatile material |
US7223321B1 (en) * | 2002-08-30 | 2007-05-29 | Lam Research Corporation | Faraday shield disposed within an inductively coupled plasma etching apparatus |
US20030047536A1 (en) * | 2002-10-02 | 2003-03-13 | Johnson Wayne L. | Method and apparatus for distributing gas within high density plasma process chamber to ensure uniform plasma |
US20040163595A1 (en) * | 2003-02-26 | 2004-08-26 | Manabu Edamura | Plasma processing apparatus |
US20040173314A1 (en) * | 2003-03-05 | 2004-09-09 | Ryoji Nishio | Plasma processing apparatus and method |
KR101007822B1 (ko) * | 2003-07-14 | 2011-01-13 | 주성엔지니어링(주) | 혼합형 플라즈마 발생 장치 |
JP4773079B2 (ja) * | 2004-11-26 | 2011-09-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置の制御方法 |
KR20060073737A (ko) * | 2004-12-24 | 2006-06-29 | 삼성전자주식회사 | 플라즈마 장치 |
JP2006216903A (ja) * | 2005-02-07 | 2006-08-17 | Hitachi High-Technologies Corp | プラズマ処理装置 |
US20070079936A1 (en) * | 2005-09-29 | 2007-04-12 | Applied Materials, Inc. | Bonded multi-layer RF window |
US7422664B2 (en) * | 2006-02-03 | 2008-09-09 | Applied Materials, Inc. | Method for plasma ignition |
US7517437B2 (en) * | 2006-03-29 | 2009-04-14 | Applied Materials, Inc. | RF powered target for increasing deposition uniformity in sputtering systems |
US8043471B2 (en) * | 2006-03-31 | 2011-10-25 | Tokyo Electron Limited | Plasma processing apparatus |
JP4810281B2 (ja) * | 2006-03-31 | 2011-11-09 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US7998307B2 (en) * | 2006-09-12 | 2011-08-16 | Tokyo Electron Limited | Electron beam enhanced surface wave plasma source |
TW200830941A (en) * | 2007-01-15 | 2008-07-16 | Jehara Corp | Plasma generating apparatus |
JP2008181710A (ja) * | 2007-01-23 | 2008-08-07 | Canon Inc | プラズマ処理装置及び方法 |
KR20100006009A (ko) * | 2008-07-08 | 2010-01-18 | 주성엔지니어링(주) | 반도체 제조 장치 |
US8299391B2 (en) * | 2008-07-30 | 2012-10-30 | Applied Materials, Inc. | Field enhanced inductively coupled plasma (Fe-ICP) reactor |
EP2416629B1 (de) | 2009-08-07 | 2021-04-21 | Kyosan Electric Mfg. Co. Ltd | Pulsmoduliertes hochfrequenz-leistungssteuerungsverfahren und pulsmodulierte hochfrequenzstromquellenvorrichtung |
KR101081743B1 (ko) * | 2009-08-17 | 2011-11-09 | 주성엔지니어링(주) | 기판처리장치 |
JP5642181B2 (ja) * | 2009-08-21 | 2014-12-17 | マットソン テクノロジー インコーポレイテッドMattson Technology, Inc. | 基体を処理する装置及び基体の処理方法 |
CN102549725B (zh) * | 2009-09-29 | 2016-06-01 | 株式会社爱发科 | 等离子蚀刻装置 |
JP2011124293A (ja) * | 2009-12-09 | 2011-06-23 | Hitachi High-Technologies Corp | プラズマ処理装置 |
US8492980B2 (en) * | 2010-10-28 | 2013-07-23 | Applied Materials, Inc. | Methods for calibrating RF power applied to a plurality of RF coils in a plasma processing system |
JP5913829B2 (ja) * | 2011-04-21 | 2016-04-27 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US9293353B2 (en) | 2011-04-28 | 2016-03-22 | Lam Research Corporation | Faraday shield having plasma density decoupling structure between TCP coil zones |
US9490106B2 (en) * | 2011-04-28 | 2016-11-08 | Lam Research Corporation | Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil |
US9966236B2 (en) | 2011-06-15 | 2018-05-08 | Lam Research Corporation | Powered grid for plasma chamber |
US9978565B2 (en) | 2011-10-07 | 2018-05-22 | Lam Research Corporation | Systems for cooling RF heated chamber components |
US20130098871A1 (en) | 2011-10-19 | 2013-04-25 | Fei Company | Internal Split Faraday Shield for an Inductively Coupled Plasma Source |
US20130220975A1 (en) * | 2012-02-27 | 2013-08-29 | Rajinder Dhindsa | Hybrid plasma processing systems |
US9437400B2 (en) * | 2012-05-02 | 2016-09-06 | Lam Research Corporation | Insulated dielectric window assembly of an inductively coupled plasma processing apparatus |
US9029267B2 (en) | 2013-05-16 | 2015-05-12 | Lam Research Corporation | Controlling temperature of a faraday shield |
JP6702640B2 (ja) * | 2013-06-17 | 2020-06-03 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | プラズマリアクタ用の強化されたプラズマ源 |
US9885493B2 (en) | 2013-07-17 | 2018-02-06 | Lam Research Corporation | Air cooled faraday shield and methods for using the same |
US20170278680A1 (en) * | 2016-03-28 | 2017-09-28 | Lam Research Corporation | Substrate processing system including coil with rf powered faraday shield |
JP6889043B2 (ja) * | 2017-06-15 | 2021-06-18 | 株式会社アルバック | プラズマ処理装置 |
US11521828B2 (en) * | 2017-10-09 | 2022-12-06 | Applied Materials, Inc. | Inductively coupled plasma source |
CN112786420B (zh) * | 2019-11-07 | 2023-03-07 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理装置及其处理基片的方法 |
CN113113280B (zh) * | 2020-01-09 | 2022-06-10 | 江苏鲁汶仪器有限公司 | 等离子体处理系统及其开合法拉第组件 |
CN113675063B (zh) * | 2020-05-15 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理装置及其导磁组件与方法 |
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-
1997
- 1997-12-31 US US09/001,512 patent/US6280563B1/en not_active Expired - Lifetime
-
1998
- 1998-12-17 TW TW087121070A patent/TW423020B/zh not_active IP Right Cessation
- 1998-12-31 EP EP98966132A patent/EP1044459B1/de not_active Expired - Lifetime
- 1998-12-31 JP JP2000526945A patent/JP4709376B2/ja not_active Expired - Fee Related
- 1998-12-31 WO PCT/US1998/027885 patent/WO1999034399A1/en active IP Right Grant
- 1998-12-31 AU AU22102/99A patent/AU2210299A/en not_active Abandoned
- 1998-12-31 IL IL13707098A patent/IL137070A/en not_active IP Right Cessation
- 1998-12-31 KR KR1020007007321A patent/KR100630885B1/ko not_active IP Right Cessation
- 1998-12-31 AT AT98966132T patent/ATE240585T1/de active
- 1998-12-31 DE DE69814687T patent/DE69814687T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1044459A1 (de) | 2000-10-18 |
DE69814687D1 (de) | 2003-06-18 |
WO1999034399A1 (en) | 1999-07-08 |
KR100630885B1 (ko) | 2006-10-02 |
KR20010033787A (ko) | 2001-04-25 |
EP1044459B1 (de) | 2003-05-14 |
US6280563B1 (en) | 2001-08-28 |
JP2002500413A (ja) | 2002-01-08 |
WO1999034399B1 (en) | 1999-08-26 |
AU2210299A (en) | 1999-07-19 |
TW423020B (en) | 2001-02-21 |
IL137070A0 (en) | 2001-06-14 |
IL137070A (en) | 2004-01-04 |
JP4709376B2 (ja) | 2011-06-22 |
DE69814687T2 (de) | 2004-02-26 |
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