ATE231287T1 - Verfahren für anodische bindung mit lichtstrahlung - Google Patents

Verfahren für anodische bindung mit lichtstrahlung

Info

Publication number
ATE231287T1
ATE231287T1 AT92116628T AT92116628T ATE231287T1 AT E231287 T1 ATE231287 T1 AT E231287T1 AT 92116628 T AT92116628 T AT 92116628T AT 92116628 T AT92116628 T AT 92116628T AT E231287 T1 ATE231287 T1 AT E231287T1
Authority
AT
Austria
Prior art keywords
anodic bonding
light radiation
substrate
glass substrate
light
Prior art date
Application number
AT92116628T
Other languages
English (en)
Inventor
Masatake Akaike
Takayuki Yagi
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE231287T1 publication Critical patent/ATE231287T1/de

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Classifications

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/04—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with articles made from glass
    • C04B37/045—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with articles made from glass characterised by the interlayer used
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
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  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Joining Of Glass To Other Materials (AREA)
  • Micromachines (AREA)
  • Ceramic Products (AREA)
AT92116628T 1991-09-30 1992-09-29 Verfahren für anodische bindung mit lichtstrahlung ATE231287T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27611491 1991-09-30

Publications (1)

Publication Number Publication Date
ATE231287T1 true ATE231287T1 (de) 2003-02-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
AT92116628T ATE231287T1 (de) 1991-09-30 1992-09-29 Verfahren für anodische bindung mit lichtstrahlung

Country Status (4)

Country Link
US (1) US5820648A (de)
EP (1) EP0539741B1 (de)
AT (1) ATE231287T1 (de)
DE (1) DE69232896T2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3300060B2 (ja) * 1992-10-22 2002-07-08 キヤノン株式会社 加速度センサー及びその製造方法
JP3188546B2 (ja) * 1993-03-23 2001-07-16 キヤノン株式会社 絶縁体と導電体との接合体並びに接合方法
JP3383081B2 (ja) 1994-07-12 2003-03-04 三菱電機株式会社 陽極接合法を用いて製造した電子部品及び電子部品の製造方法
US6823693B1 (en) * 1998-03-06 2004-11-30 Micron Technology, Inc. Anodic bonding
JP3961182B2 (ja) * 1999-01-29 2007-08-22 セイコーインスツル株式会社 陽極接合方法
JP3515003B2 (ja) * 1999-02-03 2004-04-05 新明和工業株式会社 レーザ融着方法
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DE69232896D1 (de) 2003-02-20
US5820648A (en) 1998-10-13
DE69232896T2 (de) 2003-09-04
EP0539741B1 (de) 2003-01-15

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