DE69701749D1 - Optische Halbleitervorrichtung, Herstellungsverfahren, Modulationsverfahren, Lichtquelle und optisches Kommunikationssystem oder Verfahren zu deren Herstellung - Google Patents

Optische Halbleitervorrichtung, Herstellungsverfahren, Modulationsverfahren, Lichtquelle und optisches Kommunikationssystem oder Verfahren zu deren Herstellung

Info

Publication number
DE69701749D1
DE69701749D1 DE69701749T DE69701749T DE69701749D1 DE 69701749 D1 DE69701749 D1 DE 69701749D1 DE 69701749 T DE69701749 T DE 69701749T DE 69701749 T DE69701749 T DE 69701749T DE 69701749 D1 DE69701749 D1 DE 69701749D1
Authority
DE
Germany
Prior art keywords
manufacturing
light source
semiconductor device
communication system
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69701749T
Other languages
English (en)
Other versions
DE69701749T2 (de
Inventor
Natsuhiko Mizutani
Seiichi Miyazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP02052896A external-priority patent/JP3387720B2/ja
Priority claimed from JP20933296A external-priority patent/JP3466826B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69701749D1 publication Critical patent/DE69701749D1/de
Publication of DE69701749T2 publication Critical patent/DE69701749T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06236—Controlling other output parameters than intensity or frequency controlling the polarisation, e.g. TM/TE polarisation switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3404—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation influencing the polarisation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69701749T 1996-01-11 1997-01-09 Optische Halbleitervorrichtung, Herstellungsverfahren, Modulationsverfahren, Lichtquelle und optisches Kommunikationssystem oder Verfahren zu deren Herstellung Expired - Fee Related DE69701749T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP02052896A JP3387720B2 (ja) 1996-01-11 1996-01-11 偏波変調半導体レーザとその作製方法
JP20933296A JP3466826B2 (ja) 1996-07-19 1996-07-19 利得優位な偏波モードの異なる複数種の活性層を持つ半導体光デバイス

Publications (2)

Publication Number Publication Date
DE69701749D1 true DE69701749D1 (de) 2000-05-31
DE69701749T2 DE69701749T2 (de) 2000-09-07

Family

ID=26357492

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69701749T Expired - Fee Related DE69701749T2 (de) 1996-01-11 1997-01-09 Optische Halbleitervorrichtung, Herstellungsverfahren, Modulationsverfahren, Lichtquelle und optisches Kommunikationssystem oder Verfahren zu deren Herstellung

Country Status (3)

Country Link
US (1) US5946336A (de)
EP (1) EP0784366B1 (de)
DE (1) DE69701749T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3387746B2 (ja) * 1996-07-31 2003-03-17 キヤノン株式会社 屈曲チャンネルストライプの偏波変調可能な半導体レーザ
JPH118442A (ja) 1996-10-07 1999-01-12 Canon Inc 光半導体デバイス、それを用いた光通信システム及び方法
JP3006553B2 (ja) * 1997-07-08 2000-02-07 日本電気株式会社 半導体集積型偏波モード変換器
JPH11243256A (ja) * 1997-12-03 1999-09-07 Canon Inc 分布帰還形半導体レーザとその駆動方法
JPH11233898A (ja) 1997-12-03 1999-08-27 Canon Inc 分布帰還型半導体レーザとその駆動方法
US6175446B1 (en) * 1998-09-23 2001-01-16 Sarnoff Corporation Polarization-independent semiconductor optical amplifier
US6470102B2 (en) 2000-01-19 2002-10-22 Finisar Corporation All-polymer waveguide polarization modulator and method of mode profile control and excitation
CA2411445C (en) 2000-06-08 2011-08-16 Nichia Corporation Semiconductor laser device, and method of manufacturing the same
US7009210B2 (en) * 2000-10-06 2006-03-07 Alphion Corporation Method and apparatus for bit-rate and format insensitive performance monitoring of lightwave signals
JP4789320B2 (ja) * 2000-12-01 2011-10-12 富士通株式会社 半導体光増幅器
JP3652252B2 (ja) * 2001-01-17 2005-05-25 キヤノン株式会社 半導体光装置
WO2002061499A1 (en) * 2001-02-01 2002-08-08 The Regents Of The University Of California Electroabsorption modulator having a barrier inside a quantum well
US6834068B2 (en) * 2001-06-29 2004-12-21 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
US20030068125A1 (en) * 2001-09-28 2003-04-10 The Furukawa Electric Co., Ltd. Semiconductor laser device, semiconductor laser module and optical fiber amplifier using the semiconductor laser module
JP4439193B2 (ja) * 2003-03-20 2010-03-24 富士通株式会社 半導体光増幅器及び光増幅方法
KR100584412B1 (ko) * 2003-10-10 2006-05-26 삼성전자주식회사 이득 고정된 반도체 광증폭기
JP2009025091A (ja) * 2007-07-18 2009-02-05 Canon Inc センサー装置
JP4998238B2 (ja) * 2007-12-07 2012-08-15 三菱電機株式会社 集積型半導体光素子
GB2465754B (en) * 2008-11-26 2011-02-09 Univ Dublin City A semiconductor optical amplifier with a reduced noise figure
US8594469B2 (en) * 2008-12-22 2013-11-26 Electronics And Telecommunications Research Institute Optical amplifier
US8599895B2 (en) 2011-01-27 2013-12-03 Rohm Co., Ltd. Semiconductor laser device and manufacturing method thereof
US8611386B2 (en) 2011-01-27 2013-12-17 Rohm Co., Ltd. Semiconductor laser device and manufacturing method thereof
CN111082312A (zh) * 2019-11-29 2020-04-28 河南仕佳光子科技股份有限公司 一种省隔离器边发射光器件及制作方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4918701A (en) * 1988-09-27 1990-04-17 Siemens Aktiengesellschaft Semiconductor laser arrangement and method for the operation thereof
US5117469A (en) * 1991-02-01 1992-05-26 Bell Communications Research, Inc. Polarization-dependent and polarization-diversified opto-electronic devices using a strained quantum well
JP3226065B2 (ja) * 1993-06-28 2001-11-05 キヤノン株式会社 単一波長半導体レーザ
JP3210159B2 (ja) * 1993-12-10 2001-09-17 キヤノン株式会社 半導体レーザ、光源装置、光通信システム及び光通信方法
EP0668641B1 (de) * 1994-02-18 2001-06-06 Canon Kabushiki Kaisha Polarisationsselektiver Halbleiterlaser, Lichtsender und optisches Kommunikationssystem unter Verwendung dieses Lasers
JPH07307530A (ja) * 1994-03-17 1995-11-21 Canon Inc 偏波変調可能な半導体レーザ

Also Published As

Publication number Publication date
DE69701749T2 (de) 2000-09-07
EP0784366A2 (de) 1997-07-16
US5946336A (en) 1999-08-31
EP0784366A3 (de) 1997-11-19
EP0784366B1 (de) 2000-04-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee