ATE227357T1 - Verfahren zur beschichtung diamantähnlicher, elektrisch leitender und elektronenemittierender filme auf kohlenstoffbasis - Google Patents
Verfahren zur beschichtung diamantähnlicher, elektrisch leitender und elektronenemittierender filme auf kohlenstoffbasisInfo
- Publication number
- ATE227357T1 ATE227357T1 AT95906660T AT95906660T ATE227357T1 AT E227357 T1 ATE227357 T1 AT E227357T1 AT 95906660 T AT95906660 T AT 95906660T AT 95906660 T AT95906660 T AT 95906660T AT E227357 T1 ATE227357 T1 AT E227357T1
- Authority
- AT
- Austria
- Prior art keywords
- carbon
- electrically conductive
- ion
- based film
- electron emitting
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 238000000151 deposition Methods 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 239000004215 Carbon black (E152) Substances 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 229930195733 hydrocarbon Natural products 0.000 abstract 2
- 150000002430 hydrocarbons Chemical class 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- -1 argon ions Chemical class 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 230000004907 flux Effects 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 238000000869 ion-assisted deposition Methods 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Cold Cathode And The Manufacture (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/170,770 US5616179A (en) | 1993-12-21 | 1993-12-21 | Process for deposition of diamondlike, electrically conductive and electron-emissive carbon-based films |
| PCT/US1994/014613 WO1995017537A1 (en) | 1993-12-21 | 1994-12-19 | Process for deposition of diamondlike, electrically conductive and electron-emissive carbon-based films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE227357T1 true ATE227357T1 (de) | 2002-11-15 |
Family
ID=22621186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT95906660T ATE227357T1 (de) | 1993-12-21 | 1994-12-19 | Verfahren zur beschichtung diamantähnlicher, elektrisch leitender und elektronenemittierender filme auf kohlenstoffbasis |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5616179A (de) |
| EP (1) | EP0737258B1 (de) |
| JP (1) | JP3344723B2 (de) |
| KR (1) | KR100351028B1 (de) |
| AT (1) | ATE227357T1 (de) |
| AU (1) | AU1515195A (de) |
| DE (1) | DE69431666T2 (de) |
| WO (1) | WO1995017537A1 (de) |
Families Citing this family (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6214651B1 (en) * | 1996-05-20 | 2001-04-10 | Borealis Technical Limited | Doped diamond for vacuum diode heat pumps and vacuum diode thermionic generators |
| US5981071A (en) * | 1996-05-20 | 1999-11-09 | Borealis Technical Limited | Doped diamond for vacuum diode heat pumps and vacuum diode thermionic generators |
| US5858477A (en) * | 1996-12-10 | 1999-01-12 | Akashic Memories Corporation | Method for producing recording media having protective overcoats of highly tetrahedral amorphous carbon |
| US6086962A (en) * | 1997-07-25 | 2000-07-11 | Diamonex, Incorporated | Method for deposition of diamond-like carbon and silicon-doped diamond-like carbon coatings from a hall-current ion source |
| US6368678B1 (en) | 1998-05-13 | 2002-04-09 | Terry Bluck | Plasma processing system and method |
| US6312798B1 (en) * | 1998-09-25 | 2001-11-06 | Seagate Technology Llc | Magnetic recording medium having a nitrogen-doped hydrogenated carbon protective overcoat |
| US6236543B1 (en) | 1999-01-29 | 2001-05-22 | Read-Rite Corporation | Durable landing pads for an air-bearing slider |
| US6451389B1 (en) * | 1999-04-17 | 2002-09-17 | Advanced Energy Industries, Inc. | Method for deposition of diamond like carbon |
| US6368664B1 (en) | 1999-05-03 | 2002-04-09 | Guardian Industries Corp. | Method of ion beam milling substrate prior to depositing diamond like carbon layer thereon |
| US6280834B1 (en) | 1999-05-03 | 2001-08-28 | Guardian Industries Corporation | Hydrophobic coating including DLC and/or FAS on substrate |
| US6335086B1 (en) | 1999-05-03 | 2002-01-01 | Guardian Industries Corporation | Hydrophobic coating including DLC on substrate |
| US6312808B1 (en) | 1999-05-03 | 2001-11-06 | Guardian Industries Corporation | Hydrophobic coating with DLC & FAS on substrate |
| US6277480B1 (en) | 1999-05-03 | 2001-08-21 | Guardian Industries Corporation | Coated article including a DLC inclusive layer(s) and a layer(s) deposited using siloxane gas, and corresponding method |
| US6475573B1 (en) | 1999-05-03 | 2002-11-05 | Guardian Industries Corp. | Method of depositing DLC inclusive coating on substrate |
| US6491987B2 (en) | 1999-05-03 | 2002-12-10 | Guardian Indusries Corp. | Process for depositing DLC inclusive coating with surface roughness on substrate |
| US6447891B1 (en) | 1999-05-03 | 2002-09-10 | Guardian Industries Corp. | Low-E coating system including protective DLC |
| US6461731B1 (en) | 1999-05-03 | 2002-10-08 | Guardian Industries Corp. | Solar management coating system including protective DLC |
| US6261693B1 (en) | 1999-05-03 | 2001-07-17 | Guardian Industries Corporation | Highly tetrahedral amorphous carbon coating on glass |
| US6284377B1 (en) | 1999-05-03 | 2001-09-04 | Guardian Industries Corporation | Hydrophobic coating including DLC on substrate |
| US6338901B1 (en) | 1999-05-03 | 2002-01-15 | Guardian Industries Corporation | Hydrophobic coating including DLC on substrate |
| US6153271A (en) * | 1999-12-30 | 2000-11-28 | General Vacuum, Inc. | Electron beam evaporation of transparent indium tin oxide |
| US6660340B1 (en) * | 2000-02-08 | 2003-12-09 | Epion Corporation | Diamond-like carbon film with enhanced adhesion |
| US6503406B1 (en) | 2000-08-07 | 2003-01-07 | International Business Machines Corporation | Method for forming the air bearing surface of a slider using nonreactive plasma |
| US6569580B2 (en) | 2001-03-13 | 2003-05-27 | Diverging Technologies, Inc. | Binary and phase-shift photomasks |
| JP4199440B2 (ja) * | 2001-06-29 | 2008-12-17 | 日本電気株式会社 | 超強度弾性ダイヤモンド状炭素の形成方法 |
| BR0105474A (pt) * | 2001-09-26 | 2003-09-23 | Fundacao De Amparo A Pesquisa | Processo de deposição de filme de carbono amorfo hidrogenado, filme de carbono amorfo hidrogenado e artigo revestido com filme de carbono amorfo hidrogenado |
| US6608431B1 (en) * | 2002-05-24 | 2003-08-19 | Kaufman & Robinson, Inc. | Modular gridless ion source |
| CN100533642C (zh) * | 2003-10-15 | 2009-08-26 | 塞恩技术有限公司 | 具有改进气体传输的离子源 |
| JP4247535B2 (ja) * | 2003-11-11 | 2009-04-02 | Hoya株式会社 | ロードアンロード方式用磁気ディスク、ロードアンロード方式用磁気ディスクの製造方法及びロードアンロード方式用磁気ディスクの評価方法 |
| KR100777645B1 (ko) | 2005-10-17 | 2007-11-19 | 성균관대학교산학협력단 | 다이아몬드상 카본 코팅 장치 및 그 제조방법 |
| US9305735B2 (en) | 2007-09-28 | 2016-04-05 | Brigham Young University | Reinforced polymer x-ray window |
| WO2009106208A1 (en) * | 2008-02-29 | 2009-09-03 | Merck Patent Gmbh | Alignment film for liquid crystals obtainable by direct particle beam deposition |
| US9174412B2 (en) | 2011-05-16 | 2015-11-03 | Brigham Young University | High strength carbon fiber composite wafers for microfabrication |
| US10543662B2 (en) | 2012-02-08 | 2020-01-28 | Corning Incorporated | Device modified substrate article and methods for making |
| US20140127446A1 (en) * | 2012-06-05 | 2014-05-08 | Moxtek, Inc. | Amorphous carbon and aluminum membrane |
| US9502206B2 (en) | 2012-06-05 | 2016-11-22 | Brigham Young University | Corrosion-resistant, strong x-ray window |
| US10086584B2 (en) | 2012-12-13 | 2018-10-02 | Corning Incorporated | Glass articles and methods for controlled bonding of glass sheets with carriers |
| TWI617437B (zh) | 2012-12-13 | 2018-03-11 | 康寧公司 | 促進控制薄片與載體間接合之處理 |
| US9340443B2 (en) | 2012-12-13 | 2016-05-17 | Corning Incorporated | Bulk annealing of glass sheets |
| US10014177B2 (en) | 2012-12-13 | 2018-07-03 | Corning Incorporated | Methods for processing electronic devices |
| US10510576B2 (en) | 2013-10-14 | 2019-12-17 | Corning Incorporated | Carrier-bonding methods and articles for semiconductor and interposer processing |
| KR102353030B1 (ko) | 2014-01-27 | 2022-01-19 | 코닝 인코포레이티드 | 얇은 시트와 캐리어의 제어된 결합을 위한 물품 및 방법 |
| CN111261498B (zh) | 2014-04-01 | 2024-08-20 | Ev集团E·索尔纳有限责任公司 | 用于衬底表面处理的方法及装置 |
| JP2017518954A (ja) | 2014-04-09 | 2017-07-13 | コーニング インコーポレイテッド | デバイスで改質された基体物品、およびそれを製造する方法 |
| EP3297824A1 (de) | 2015-05-19 | 2018-03-28 | Corning Incorporated | Artikel und verfahren zum verbinden von blättern mit trägern |
| KR102524620B1 (ko) | 2015-06-26 | 2023-04-21 | 코닝 인코포레이티드 | 시트 및 캐리어를 포함하는 방법들 및 물품들 |
| TWI892429B (zh) | 2016-08-30 | 2025-08-01 | 美商康寧公司 | 用於片材接合的矽氧烷電漿聚合物 |
| TWI821867B (zh) | 2016-08-31 | 2023-11-11 | 美商康寧公司 | 具以可控制式黏結的薄片之製品及製作其之方法 |
| WO2019036710A1 (en) | 2017-08-18 | 2019-02-21 | Corning Incorporated | TEMPORARY BINDING USING POLYCATIONIC POLYMERS |
| CN111615567B (zh) | 2017-12-15 | 2023-04-14 | 康宁股份有限公司 | 用于处理基板的方法和用于制备包括粘合片材的制品的方法 |
| EP4662694A1 (de) * | 2023-02-09 | 2025-12-17 | Zero Resistance (Pty) Ltd | Halbleitersubstrate auf n-typ-kohlenstoffbasis und verfahren zur herstellung davon |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3904505A (en) * | 1970-03-20 | 1975-09-09 | Space Sciences Inc | Apparatus for film deposition |
| US3961103A (en) * | 1972-07-12 | 1976-06-01 | Space Sciences, Inc. | Film deposition |
| US4526673A (en) * | 1982-09-24 | 1985-07-02 | Spire Corporation | Coating method |
| US4486286A (en) * | 1982-09-28 | 1984-12-04 | Nerken Research Corp. | Method of depositing a carbon film on a substrate and products obtained thereby |
| US4565618A (en) * | 1983-05-17 | 1986-01-21 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Apparatus for producing diamondlike carbon flakes |
| US4490229A (en) * | 1984-07-09 | 1984-12-25 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Deposition of diamondlike carbon films |
| US4862032A (en) * | 1986-10-20 | 1989-08-29 | Kaufman Harold R | End-Hall ion source |
| JPH03274269A (ja) * | 1990-03-22 | 1991-12-05 | Matsushita Electric Ind Co Ltd | ダイヤモンド状薄膜の合成方法及びダイヤモンド状薄膜 |
| JP2819431B2 (ja) * | 1990-09-25 | 1998-10-30 | 新日本製鐵株式会社 | 硬質炭素膜の被覆方法 |
| US5135808A (en) * | 1990-09-27 | 1992-08-04 | Diamonex, Incorporated | Abrasion wear resistant coated substrate product |
| US5190807A (en) * | 1990-10-18 | 1993-03-02 | Diamonex, Incorporated | Abrasion wear resistant polymeric substrate product |
-
1993
- 1993-12-21 US US08/170,770 patent/US5616179A/en not_active Expired - Lifetime
-
1994
- 1994-12-19 DE DE69431666T patent/DE69431666T2/de not_active Expired - Fee Related
- 1994-12-19 EP EP95906660A patent/EP0737258B1/de not_active Expired - Lifetime
- 1994-12-19 WO PCT/US1994/014613 patent/WO1995017537A1/en not_active Ceased
- 1994-12-19 AT AT95906660T patent/ATE227357T1/de not_active IP Right Cessation
- 1994-12-19 KR KR1019960703156A patent/KR100351028B1/ko not_active Expired - Fee Related
- 1994-12-19 JP JP51753695A patent/JP3344723B2/ja not_active Expired - Fee Related
- 1994-12-19 AU AU15151/95A patent/AU1515195A/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP0737258A4 (de) | 1998-07-15 |
| JP3344723B2 (ja) | 2002-11-18 |
| EP0737258A1 (de) | 1996-10-16 |
| AU1515195A (en) | 1995-07-10 |
| WO1995017537A1 (en) | 1995-06-29 |
| JPH09508613A (ja) | 1997-09-02 |
| DE69431666T2 (de) | 2003-07-17 |
| KR100351028B1 (ko) | 2003-01-24 |
| DE69431666D1 (de) | 2002-12-12 |
| US5616179A (en) | 1997-04-01 |
| EP0737258B1 (de) | 2002-11-06 |
| HK1008688A1 (en) | 1999-05-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |