ATE227357T1 - Verfahren zur beschichtung diamantähnlicher, elektrisch leitender und elektronenemittierender filme auf kohlenstoffbasis - Google Patents

Verfahren zur beschichtung diamantähnlicher, elektrisch leitender und elektronenemittierender filme auf kohlenstoffbasis

Info

Publication number
ATE227357T1
ATE227357T1 AT95906660T AT95906660T ATE227357T1 AT E227357 T1 ATE227357 T1 AT E227357T1 AT 95906660 T AT95906660 T AT 95906660T AT 95906660 T AT95906660 T AT 95906660T AT E227357 T1 ATE227357 T1 AT E227357T1
Authority
AT
Austria
Prior art keywords
carbon
electrically conductive
ion
based film
electron emitting
Prior art date
Application number
AT95906660T
Other languages
English (en)
Inventor
David A Baldwin
Stephen L Michel
Original Assignee
Veeco Instr Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22621186&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE227357(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Veeco Instr Inc filed Critical Veeco Instr Inc
Application granted granted Critical
Publication of ATE227357T1 publication Critical patent/ATE227357T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02Pretreatment of the material to be coated
    • C23C16/0227Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/10Heating of the reaction chamber or the substrate
    • C30B25/105Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Cold Cathode And The Manufacture (AREA)
AT95906660T 1993-12-21 1994-12-19 Verfahren zur beschichtung diamantähnlicher, elektrisch leitender und elektronenemittierender filme auf kohlenstoffbasis ATE227357T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/170,770 US5616179A (en) 1993-12-21 1993-12-21 Process for deposition of diamondlike, electrically conductive and electron-emissive carbon-based films
PCT/US1994/014613 WO1995017537A1 (en) 1993-12-21 1994-12-19 Process for deposition of diamondlike, electrically conductive and electron-emissive carbon-based films

Publications (1)

Publication Number Publication Date
ATE227357T1 true ATE227357T1 (de) 2002-11-15

Family

ID=22621186

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95906660T ATE227357T1 (de) 1993-12-21 1994-12-19 Verfahren zur beschichtung diamantähnlicher, elektrisch leitender und elektronenemittierender filme auf kohlenstoffbasis

Country Status (8)

Country Link
US (1) US5616179A (de)
EP (1) EP0737258B1 (de)
JP (1) JP3344723B2 (de)
KR (1) KR100351028B1 (de)
AT (1) ATE227357T1 (de)
AU (1) AU1515195A (de)
DE (1) DE69431666T2 (de)
WO (1) WO1995017537A1 (de)

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US6475573B1 (en) 1999-05-03 2002-11-05 Guardian Industries Corp. Method of depositing DLC inclusive coating on substrate
US6491987B2 (en) 1999-05-03 2002-12-10 Guardian Indusries Corp. Process for depositing DLC inclusive coating with surface roughness on substrate
US6447891B1 (en) 1999-05-03 2002-09-10 Guardian Industries Corp. Low-E coating system including protective DLC
US6461731B1 (en) 1999-05-03 2002-10-08 Guardian Industries Corp. Solar management coating system including protective DLC
US6261693B1 (en) 1999-05-03 2001-07-17 Guardian Industries Corporation Highly tetrahedral amorphous carbon coating on glass
US6284377B1 (en) 1999-05-03 2001-09-04 Guardian Industries Corporation Hydrophobic coating including DLC on substrate
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US6660340B1 (en) * 2000-02-08 2003-12-09 Epion Corporation Diamond-like carbon film with enhanced adhesion
US6503406B1 (en) 2000-08-07 2003-01-07 International Business Machines Corporation Method for forming the air bearing surface of a slider using nonreactive plasma
US6569580B2 (en) 2001-03-13 2003-05-27 Diverging Technologies, Inc. Binary and phase-shift photomasks
JP4199440B2 (ja) * 2001-06-29 2008-12-17 日本電気株式会社 超強度弾性ダイヤモンド状炭素の形成方法
BR0105474A (pt) * 2001-09-26 2003-09-23 Fundacao De Amparo A Pesquisa Processo de deposição de filme de carbono amorfo hidrogenado, filme de carbono amorfo hidrogenado e artigo revestido com filme de carbono amorfo hidrogenado
US6608431B1 (en) * 2002-05-24 2003-08-19 Kaufman & Robinson, Inc. Modular gridless ion source
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US9174412B2 (en) 2011-05-16 2015-11-03 Brigham Young University High strength carbon fiber composite wafers for microfabrication
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KR102353030B1 (ko) 2014-01-27 2022-01-19 코닝 인코포레이티드 얇은 시트와 캐리어의 제어된 결합을 위한 물품 및 방법
CN111261498B (zh) 2014-04-01 2024-08-20 Ev集团E·索尔纳有限责任公司 用于衬底表面处理的方法及装置
JP2017518954A (ja) 2014-04-09 2017-07-13 コーニング インコーポレイテッド デバイスで改質された基体物品、およびそれを製造する方法
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Also Published As

Publication number Publication date
EP0737258A4 (de) 1998-07-15
JP3344723B2 (ja) 2002-11-18
EP0737258A1 (de) 1996-10-16
AU1515195A (en) 1995-07-10
WO1995017537A1 (en) 1995-06-29
JPH09508613A (ja) 1997-09-02
DE69431666T2 (de) 2003-07-17
KR100351028B1 (ko) 2003-01-24
DE69431666D1 (de) 2002-12-12
US5616179A (en) 1997-04-01
EP0737258B1 (de) 2002-11-06
HK1008688A1 (en) 1999-05-14

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