ATE219599T1 - Nieder-leistungs-leseverstärker des typs gain speicherzelle - Google Patents
Nieder-leistungs-leseverstärker des typs gain speicherzelleInfo
- Publication number
- ATE219599T1 ATE219599T1 AT96104548T AT96104548T ATE219599T1 AT E219599 T1 ATE219599 T1 AT E219599T1 AT 96104548 T AT96104548 T AT 96104548T AT 96104548 T AT96104548 T AT 96104548T AT E219599 T1 ATE219599 T1 AT E219599T1
- Authority
- AT
- Austria
- Prior art keywords
- low power
- sense amplifier
- memory cell
- sensing
- gain memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/067—Single-ended amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Amplifiers (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41409095A | 1995-03-31 | 1995-03-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE219599T1 true ATE219599T1 (de) | 2002-07-15 |
Family
ID=23639918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT96104548T ATE219599T1 (de) | 1995-03-31 | 1996-03-21 | Nieder-leistungs-leseverstärker des typs gain speicherzelle |
Country Status (7)
Country | Link |
---|---|
US (1) | US5610540A (de) |
EP (1) | EP0735540B1 (de) |
JP (1) | JPH08287692A (de) |
KR (1) | KR100417479B1 (de) |
AT (1) | ATE219599T1 (de) |
DE (1) | DE69621870T2 (de) |
TW (1) | TW315541B (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5734275A (en) * | 1996-07-18 | 1998-03-31 | Advanced Micro Devices, Inc. | Programmable logic device having a sense amplifier with virtual ground |
US5929660A (en) * | 1997-12-29 | 1999-07-27 | United Technologies Corporation | Dynamic, single-ended sense amplifier |
JP2002083493A (ja) * | 2000-09-05 | 2002-03-22 | Toshiba Corp | 半導体記憶装置 |
US6753719B2 (en) * | 2002-08-26 | 2004-06-22 | Motorola, Inc. | System and circuit for controlling well biasing and method thereof |
JP5518409B2 (ja) | 2009-09-15 | 2014-06-11 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置、半導体記憶装置、及び半導体装置を含む情報処理システム |
FR2953643B1 (fr) | 2009-12-08 | 2012-07-27 | Soitec Silicon On Insulator | Cellule memoire flash sur seoi disposant d'une seconde grille de controle enterree sous la couche isolante |
FR2957449B1 (fr) * | 2010-03-11 | 2022-07-15 | S O I Tec Silicon On Insulator Tech | Micro-amplificateur de lecture pour memoire |
KR101288216B1 (ko) | 2011-09-23 | 2013-07-18 | 삼성전기주식회사 | 전력 증폭기 |
JP2014142995A (ja) * | 2014-04-02 | 2014-08-07 | Ps4 Luxco S A R L | 半導体装置、半導体記憶装置、及び半導体装置を含む情報処理システム |
CN108806742B (zh) | 2017-05-04 | 2022-01-04 | 汤朝景 | 随机存取存储器并且具有与其相关的电路、方法以及设备 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3932848A (en) * | 1975-01-20 | 1976-01-13 | Intel Corporation | Feedback circuit for allowing rapid charging and discharging of a sense node in a static memory |
JPS5836503B2 (ja) * | 1980-01-25 | 1983-08-09 | 株式会社東芝 | 半導体メモリ装置 |
US4434381A (en) * | 1981-12-07 | 1984-02-28 | Rca Corporation | Sense amplifiers |
US4574365A (en) * | 1983-04-18 | 1986-03-04 | International Business Machines Corporation | Shared access lines memory cells |
US4567387A (en) * | 1983-06-30 | 1986-01-28 | Rca Corporation | Linear sense amplifier |
JPS6254893A (ja) * | 1985-09-03 | 1987-03-10 | Nec Corp | 半導体メモリ装置 |
US4970689A (en) * | 1988-03-07 | 1990-11-13 | International Business Machines Corporation | Charge amplifying trench memory cell |
KR910008101B1 (ko) * | 1988-12-30 | 1991-10-07 | 삼성전자 주식회사 | 반도체 메모리 소자의 피드백형 데이타 출력 회로 |
JPH0814995B2 (ja) * | 1989-01-27 | 1996-02-14 | 株式会社東芝 | 半導体メモリ |
US5013943A (en) * | 1989-08-11 | 1991-05-07 | Simtek Corporation | Single ended sense amplifier with improved data recall for variable bit line current |
US5138198A (en) * | 1991-05-03 | 1992-08-11 | Lattice Semiconductor Corporation | Integrated programmable logic device with control circuit to power down unused sense amplifiers |
TW223172B (en) * | 1992-12-22 | 1994-05-01 | Siemens Ag | Siganl sensing circuits for memory system using dynamic gain memory cells |
US5426385A (en) * | 1994-06-07 | 1995-06-20 | National Science Council | Double positive feedback loop precharge CMOS single-ended sense amplifier |
-
1996
- 1996-03-21 DE DE69621870T patent/DE69621870T2/de not_active Expired - Fee Related
- 1996-03-21 AT AT96104548T patent/ATE219599T1/de active
- 1996-03-21 EP EP96104548A patent/EP0735540B1/de not_active Expired - Lifetime
- 1996-03-22 TW TW085103483A patent/TW315541B/zh not_active IP Right Cessation
- 1996-03-28 KR KR1019960008696A patent/KR100417479B1/ko not_active IP Right Cessation
- 1996-04-01 JP JP8079249A patent/JPH08287692A/ja active Pending
- 1996-04-01 US US08/625,840 patent/US5610540A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0735540A2 (de) | 1996-10-02 |
EP0735540B1 (de) | 2002-06-19 |
TW315541B (de) | 1997-09-11 |
JPH08287692A (ja) | 1996-11-01 |
DE69621870T2 (de) | 2003-01-02 |
US5610540A (en) | 1997-03-11 |
DE69621870D1 (de) | 2002-07-25 |
EP0735540A3 (de) | 1996-10-30 |
KR100417479B1 (ko) | 2004-04-29 |
KR960035644A (ko) | 1996-10-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20030123522A1 (en) | Low-power band-gap reference and temperature sensor circuit | |
KR940009835B1 (ko) | 온칩 전압 레귤레이터 및 그것을 사용한 반도체 메모리 장치 | |
KR920001539A (ko) | 적분 논리 기능을 가진 감지증폭기 | |
ATE219599T1 (de) | Nieder-leistungs-leseverstärker des typs gain speicherzelle | |
TW374930B (en) | A RAM device having a self-refresh mode | |
DE69115741D1 (de) | Kurzschlussdetektor für Speichermatrix | |
JPH02302990A (ja) | 電源供給電圧変換回路 | |
WO2002073620A3 (en) | Reference for mram cell | |
EP0196110B1 (de) | Detektorverstärker für Direktzugriffspeicher | |
JP3147044B2 (ja) | 半導体記憶装置 | |
US6259286B1 (en) | Method and apparatus for a power-on-reset system | |
JP3425956B2 (ja) | 電圧を安定にするための回路および方法 | |
KR100336840B1 (ko) | 반도체 메모리 장치의 감지 증폭기 | |
KR960025732A (ko) | 동작전류 소모를 줄인 반도체 메모리 소자 | |
KR950004271A (ko) | 반도체 메모리 장치의 전원전압 감지회로 | |
US6867639B2 (en) | Half voltage generator for use in semiconductor memory device | |
KR100378690B1 (ko) | 대기전류를감소시킨반도체메모리용고전원발생장치 | |
EP0399820A2 (de) | Halbleiterspeicher | |
JPH08321176A (ja) | 半導体メモリセル | |
JPS6196587A (ja) | センスアンプ回路 | |
TW548903B (en) | Supply voltage level detector | |
EP0357502A3 (de) | Programmierbare Halbleiterspeicherschaltung | |
KR920001540A (ko) | 반도체 메모리 장치 | |
DE69712818D1 (de) | Halbleiterspeicheranordnung | |
KR980004951A (ko) | 오판독 동작을 방지할 수 있는 감지 증폭기 회로 |