ATE210892T1 - Verfahren zur herstellung eines thermisch stabilen silizids - Google Patents

Verfahren zur herstellung eines thermisch stabilen silizids

Info

Publication number
ATE210892T1
ATE210892T1 AT95933912T AT95933912T ATE210892T1 AT E210892 T1 ATE210892 T1 AT E210892T1 AT 95933912 T AT95933912 T AT 95933912T AT 95933912 T AT95933912 T AT 95933912T AT E210892 T1 ATE210892 T1 AT E210892T1
Authority
AT
Austria
Prior art keywords
producing
thermally stable
stable silicide
silicide
silicon
Prior art date
Application number
AT95933912T
Other languages
English (en)
Inventor
Shekhar Pramanick
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of ATE210892T1 publication Critical patent/ATE210892T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Silicon Compounds (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT95933912T 1994-10-25 1995-09-25 Verfahren zur herstellung eines thermisch stabilen silizids ATE210892T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US32863094A 1994-10-25 1994-10-25
PCT/US1995/012129 WO1996013061A1 (en) 1994-10-25 1995-09-25 Method of forming a thermally stable silicide

Publications (1)

Publication Number Publication Date
ATE210892T1 true ATE210892T1 (de) 2001-12-15

Family

ID=23281739

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95933912T ATE210892T1 (de) 1994-10-25 1995-09-25 Verfahren zur herstellung eines thermisch stabilen silizids

Country Status (5)

Country Link
EP (1) EP0736224B1 (de)
JP (1) JPH09507615A (de)
AT (1) ATE210892T1 (de)
DE (1) DE69524568T2 (de)
WO (1) WO1996013061A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08186085A (ja) * 1994-12-28 1996-07-16 Nec Corp 半導体装置の製造方法
KR20030048548A (ko) * 2001-12-12 2003-06-25 주식회사 하이닉스반도체 반도체 장치의 제조 방법
DE10208728B4 (de) 2002-02-28 2009-05-07 Advanced Micro Devices, Inc., Sunnyvale Ein Verfahren zur Herstellung eines Halbleiterelements mit unterschiedlichen Metallsilizidbereichen
DE10208904B4 (de) 2002-02-28 2007-03-01 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung unterschiedlicher Silicidbereiche auf verschiedenen Silicium enthaltenden Gebieten in einem Halbleiterelement
DE10209059B4 (de) * 2002-03-01 2007-04-05 Advanced Micro Devices, Inc., Sunnyvale Ein Halbleiterelement mit unterschiedlichen Metall-Halbleiterbereichen, die auf einem Halbleitergebiet gebildet sind, und Verfahren zur Herstellung des Halbleiterelements
DE10234931A1 (de) 2002-07-31 2004-02-26 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung eines Metallsilizidgates in einer standardmässigen MOS-Prozesssequenz
DE10248205B4 (de) 2002-10-16 2007-03-08 Infineon Technologies Ag Ohmsche Kontaktanordnung und Herstellverfahren
US6815235B1 (en) 2002-11-25 2004-11-09 Advanced Micro Devices, Inc. Methods of controlling formation of metal silicide regions, and system for performing same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6233466A (ja) * 1985-08-07 1987-02-13 Hitachi Ltd 半導体装置の製造方法
JPS63227018A (ja) * 1987-03-17 1988-09-21 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH01179415A (ja) * 1988-01-07 1989-07-17 Kawasaki Steel Corp 金属シリサイド層の形成方法

Also Published As

Publication number Publication date
JPH09507615A (ja) 1997-07-29
WO1996013061A1 (en) 1996-05-02
DE69524568D1 (de) 2002-01-24
DE69524568T2 (de) 2002-07-25
EP0736224A1 (de) 1996-10-09
EP0736224B1 (de) 2001-12-12

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