ATE210892T1 - Verfahren zur herstellung eines thermisch stabilen silizids - Google Patents
Verfahren zur herstellung eines thermisch stabilen silizidsInfo
- Publication number
- ATE210892T1 ATE210892T1 AT95933912T AT95933912T ATE210892T1 AT E210892 T1 ATE210892 T1 AT E210892T1 AT 95933912 T AT95933912 T AT 95933912T AT 95933912 T AT95933912 T AT 95933912T AT E210892 T1 ATE210892 T1 AT E210892T1
- Authority
- AT
- Austria
- Prior art keywords
- producing
- thermally stable
- stable silicide
- silicide
- silicon
- Prior art date
Links
- 229910021332 silicide Inorganic materials 0.000 title abstract 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Silicon Compounds (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US32863094A | 1994-10-25 | 1994-10-25 | |
| PCT/US1995/012129 WO1996013061A1 (en) | 1994-10-25 | 1995-09-25 | Method of forming a thermally stable silicide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE210892T1 true ATE210892T1 (de) | 2001-12-15 |
Family
ID=23281739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT95933912T ATE210892T1 (de) | 1994-10-25 | 1995-09-25 | Verfahren zur herstellung eines thermisch stabilen silizids |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0736224B1 (de) |
| JP (1) | JPH09507615A (de) |
| AT (1) | ATE210892T1 (de) |
| DE (1) | DE69524568T2 (de) |
| WO (1) | WO1996013061A1 (de) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08186085A (ja) * | 1994-12-28 | 1996-07-16 | Nec Corp | 半導体装置の製造方法 |
| KR20030048548A (ko) * | 2001-12-12 | 2003-06-25 | 주식회사 하이닉스반도체 | 반도체 장치의 제조 방법 |
| DE10208904B4 (de) | 2002-02-28 | 2007-03-01 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung unterschiedlicher Silicidbereiche auf verschiedenen Silicium enthaltenden Gebieten in einem Halbleiterelement |
| DE10208728B4 (de) | 2002-02-28 | 2009-05-07 | Advanced Micro Devices, Inc., Sunnyvale | Ein Verfahren zur Herstellung eines Halbleiterelements mit unterschiedlichen Metallsilizidbereichen |
| DE10209059B4 (de) | 2002-03-01 | 2007-04-05 | Advanced Micro Devices, Inc., Sunnyvale | Ein Halbleiterelement mit unterschiedlichen Metall-Halbleiterbereichen, die auf einem Halbleitergebiet gebildet sind, und Verfahren zur Herstellung des Halbleiterelements |
| DE10234931A1 (de) | 2002-07-31 | 2004-02-26 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung eines Metallsilizidgates in einer standardmässigen MOS-Prozesssequenz |
| DE10248205B4 (de) * | 2002-10-16 | 2007-03-08 | Infineon Technologies Ag | Ohmsche Kontaktanordnung und Herstellverfahren |
| US6815235B1 (en) | 2002-11-25 | 2004-11-09 | Advanced Micro Devices, Inc. | Methods of controlling formation of metal silicide regions, and system for performing same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6233466A (ja) * | 1985-08-07 | 1987-02-13 | Hitachi Ltd | 半導体装置の製造方法 |
| JPS63227018A (ja) * | 1987-03-17 | 1988-09-21 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPH01179415A (ja) * | 1988-01-07 | 1989-07-17 | Kawasaki Steel Corp | 金属シリサイド層の形成方法 |
-
1995
- 1995-09-25 WO PCT/US1995/012129 patent/WO1996013061A1/en active IP Right Grant
- 1995-09-25 AT AT95933912T patent/ATE210892T1/de active
- 1995-09-25 EP EP95933912A patent/EP0736224B1/de not_active Expired - Lifetime
- 1995-09-25 DE DE69524568T patent/DE69524568T2/de not_active Expired - Fee Related
- 1995-09-25 JP JP8513914A patent/JPH09507615A/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO1996013061A1 (en) | 1996-05-02 |
| DE69524568D1 (de) | 2002-01-24 |
| DE69524568T2 (de) | 2002-07-25 |
| JPH09507615A (ja) | 1997-07-29 |
| EP0736224B1 (de) | 2001-12-12 |
| EP0736224A1 (de) | 1996-10-09 |
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