ATE205173T1 - Heissgepresstes siliziumkarbidplättchen und methode zu dessen verwendung als attrappe - Google Patents

Heissgepresstes siliziumkarbidplättchen und methode zu dessen verwendung als attrappe

Info

Publication number
ATE205173T1
ATE205173T1 AT98908759T AT98908759T ATE205173T1 AT E205173 T1 ATE205173 T1 AT E205173T1 AT 98908759 T AT98908759 T AT 98908759T AT 98908759 T AT98908759 T AT 98908759T AT E205173 T1 ATE205173 T1 AT E205173T1
Authority
AT
Austria
Prior art keywords
silicon carbide
hot
dummy
same
pressed silicon
Prior art date
Application number
AT98908759T
Other languages
English (en)
Inventor
Thomas M Holmes
John A Tomanovich
Original Assignee
Saint Gobain Norton Ind Cerami
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Norton Ind Cerami filed Critical Saint Gobain Norton Ind Cerami
Application granted granted Critical
Publication of ATE205173T1 publication Critical patent/ATE205173T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C04B35/575—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by pressure sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
AT98908759T 1997-03-03 1998-02-27 Heissgepresstes siliziumkarbidplättchen und methode zu dessen verwendung als attrappe ATE205173T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/805,843 US5770324A (en) 1997-03-03 1997-03-03 Method of using a hot pressed silicon carbide dummy wafer
PCT/US1998/003831 WO1998039270A1 (en) 1997-03-03 1998-02-27 Hot pressed silicon carbide wafer and method of using it as a dummy wafer

Publications (1)

Publication Number Publication Date
ATE205173T1 true ATE205173T1 (de) 2001-09-15

Family

ID=25192663

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98908759T ATE205173T1 (de) 1997-03-03 1998-02-27 Heissgepresstes siliziumkarbidplättchen und methode zu dessen verwendung als attrappe

Country Status (8)

Country Link
US (1) US5770324A (de)
EP (1) EP0964839B1 (de)
JP (1) JP2000505043A (de)
AT (1) ATE205173T1 (de)
AU (1) AU6670898A (de)
DE (1) DE69801561T2 (de)
ES (1) ES2163858T3 (de)
WO (1) WO1998039270A1 (de)

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US5942454A (en) * 1996-08-27 1999-08-24 Asahi Glass Company Ltd. Highly corrosion-resistant silicon carbide product
DE69804161T2 (de) * 1997-06-20 2002-08-14 Bridgestone Corp Bauteil für Halbleiterapparatur
US6200388B1 (en) * 1998-02-11 2001-03-13 Applied Materials, Inc. Substrate support for a thermal processing chamber
AT408153B (de) * 1998-09-02 2001-09-25 Electrovac Metall-matrix-composite- (mmc-) bauteil
US6280496B1 (en) * 1998-09-14 2001-08-28 Sumitomo Electric Industries, Ltd. Silicon carbide based composite material and manufacturing method thereof
US6419757B2 (en) * 1998-12-08 2002-07-16 Bridgestone, Corporation Method for cleaning sintered silicon carbide in wet condition
US6162543A (en) * 1998-12-11 2000-12-19 Saint-Gobain Industrial Ceramics, Inc. High purity siliconized silicon carbide having high thermal shock resistance
US6517908B1 (en) 2000-01-10 2003-02-11 Nec Electronics, Inc. Method for making a test wafer from a substrate
DE10146393A1 (de) * 2001-09-20 2003-04-17 Wacker Chemie Gmbh Unmagnetischer Sinterkörper auf Basis von SiC und seine Verwendung
US20040130055A1 (en) * 2001-11-27 2004-07-08 Beaman Joseph J. Method for fabricating siliconized silicon carbide parts
US20030233977A1 (en) * 2002-06-20 2003-12-25 Yeshwanth Narendar Method for forming semiconductor processing components
US20040173597A1 (en) * 2003-03-03 2004-09-09 Manoj Agrawal Apparatus for contacting gases at high temperature
US8192648B2 (en) * 2003-04-14 2012-06-05 S'tile Method for forming a sintered semiconductor material
US20090028740A1 (en) * 2003-04-14 2009-01-29 S'tile Method for the production of semiconductor granules
US8405183B2 (en) * 2003-04-14 2013-03-26 S'Tile Pole des Eco-Industries Semiconductor structure
US9741881B2 (en) 2003-04-14 2017-08-22 S'tile Photovoltaic module including integrated photovoltaic cells
US9493358B2 (en) * 2003-04-14 2016-11-15 Stile Photovoltaic module including integrated photovoltaic cells
EP1618612A1 (de) * 2003-04-14 2006-01-25 Centre National De La Recherche Scientifique (Cnrs) Gesintertes halbleitermaterial
US6825123B2 (en) * 2003-04-15 2004-11-30 Saint-Goban Ceramics & Plastics, Inc. Method for treating semiconductor processing components and components formed thereby
WO2004110963A2 (en) * 2003-05-29 2004-12-23 Pettegrew Jay W Glycerophosphocholine and its derivatives for medical imaging neuropsychiatric disorders
JP2005039212A (ja) * 2003-06-27 2005-02-10 Bridgestone Corp ダミーウェハ及びその製造方法
JP2005047753A (ja) * 2003-07-29 2005-02-24 Tadahiro Omi 炭化珪素製品、その製造方法、及び、炭化珪素製品の洗浄方法
DE10338504A1 (de) * 2003-08-21 2004-10-07 Infineon Technologies Ag Dummy-Wafer für Ofenprozesse, insbesondere Schichtabscheidungs-Ofenprozesse, und entsprechendes Herstellungsverfahren
US20050145584A1 (en) * 2004-01-06 2005-07-07 Buckley Richard F. Wafer boat with interference fit wafer supports
US7501370B2 (en) * 2004-01-06 2009-03-10 Saint-Gobain Ceramics & Plastics, Inc. High purity silicon carbide wafer boats
US7888685B2 (en) * 2004-07-27 2011-02-15 Memc Electronic Materials, Inc. High purity silicon carbide structures
JP4455225B2 (ja) * 2004-08-25 2010-04-21 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US7811943B2 (en) * 2004-12-22 2010-10-12 Cree, Inc. Process for producing silicon carbide crystals having increased minority carrier lifetimes
CN101327487B (zh) * 2007-06-21 2010-12-22 中芯国际集成电路制造(上海)有限公司 炉管的清洗方法和系统
US20100330325A1 (en) * 2007-07-13 2010-12-30 Nippon Mining & Metals Co., Ltd. Sintered Silicon Wafer
WO2009011235A1 (ja) * 2007-07-13 2009-01-22 Nippon Mining & Metals Co., Ltd. 焼結シリコンウエハ
US7727919B2 (en) * 2007-10-29 2010-06-01 Saint-Gobain Ceramics & Plastics, Inc. High resistivity silicon carbide
JP5480153B2 (ja) * 2007-12-20 2014-04-23 クアーズテック，インコーポレイティド 半導体加工用部品の処理方法およびそれにより形成された部品
WO2011049938A2 (en) * 2009-10-20 2011-04-28 Saint-Gobain Ceramics & Plastics, Inc. Microelectronic processing component having a corrosion-resistant layer, microelectronic workpiece processing apparatus incorporating same, and method of forming an article having the corrosion-resistant layer
KR101189392B1 (ko) * 2010-07-30 2012-10-10 엘지이노텍 주식회사 볼을 사용한 탄화규소 소결체 제조 방법
JP5730521B2 (ja) * 2010-09-08 2015-06-10 株式会社日立ハイテクノロジーズ 熱処理装置
CN108666233B (zh) * 2017-03-31 2021-02-05 上海新昇半导体科技有限公司 一种可用作挡片或控片的晶片制备方法及晶片
JP7353209B2 (ja) * 2020-02-20 2023-09-29 東京エレクトロン株式会社 ダミーウエハ

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US3836673A (en) * 1972-03-23 1974-09-17 Norton Co Sintered silicon carbide
JPS5277590A (en) * 1975-12-24 1977-06-30 Toshiba Corp Semiconductor producing device
US4346049A (en) * 1978-05-01 1982-08-24 Kennecott Corporation Sintered alpha silicon carbide ceramic body having equiaxed microstructure
DE3338755A1 (de) * 1982-10-28 1984-05-03 Toshiba Ceramics Co., Ltd., Tokio/Topkyo Formkoerper auf siliziumkarbidbasis zum einsatz bei der halbleiterherstellung
US4525429A (en) * 1983-06-08 1985-06-25 Kennecott Corporation Porous semiconductor dopant carriers
JPS60138914A (ja) * 1983-12-26 1985-07-23 Toshiba Ceramics Co Ltd 半導体拡散炉管の製造方法
US4761134B1 (en) * 1987-03-30 1993-11-16 Silicon carbide diffusion furnace components with an impervious coating thereon
US4998879A (en) * 1988-04-29 1991-03-12 Norton Company High purity diffusion furnace components
US4999228A (en) * 1988-05-06 1991-03-12 Shin-Etsu Chemical Co., Ltd. Silicon carbide diffusion tube for semi-conductor
US5589116A (en) * 1991-07-18 1996-12-31 Sumitomo Metal Industries, Ltd. Process for preparing a silicon carbide sintered body for use in semiconductor equipment
JPH05283306A (ja) * 1992-03-31 1993-10-29 Toshiba Ceramics Co Ltd ダミーウェハ
CA2099788A1 (en) * 1992-07-31 1994-02-01 Michael A. Pickering Ultra pure silicon carbide and high temperature semiconductor processing equipment made therefrom
US5302561A (en) * 1993-03-11 1994-04-12 Cercom, Inc. Monolithic, fully dense silicon carbide mirror and method of manufacturing
AU5180496A (en) * 1995-03-01 1996-09-18 Saint-Gobain/Norton Industrial Ceramics Corporation Novel silicon carbide dummy wafer

Also Published As

Publication number Publication date
DE69801561D1 (de) 2001-10-11
EP0964839B1 (de) 2001-09-05
US5770324A (en) 1998-06-23
AU6670898A (en) 1998-09-22
WO1998039270A1 (en) 1998-09-11
EP0964839A1 (de) 1999-12-22
ES2163858T3 (es) 2002-02-01
DE69801561T2 (de) 2002-07-11
JP2000505043A (ja) 2000-04-25

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