ATE198680T1 - Verfahren zur herstellung einer halbleiteranordnung mit einem bipolartransistor - Google Patents
Verfahren zur herstellung einer halbleiteranordnung mit einem bipolartransistorInfo
- Publication number
- ATE198680T1 ATE198680T1 AT91304968T AT91304968T ATE198680T1 AT E198680 T1 ATE198680 T1 AT E198680T1 AT 91304968 T AT91304968 T AT 91304968T AT 91304968 T AT91304968 T AT 91304968T AT E198680 T1 ATE198680 T1 AT E198680T1
- Authority
- AT
- Austria
- Prior art keywords
- region
- semiconductor
- semiconductor device
- bipolar transistor
- semiconductor region
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 10
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66416—Static induction transistors [SIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Die Bonding (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13962290 | 1990-05-31 | ||
JP31159390 | 1990-11-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE198680T1 true ATE198680T1 (de) | 2001-01-15 |
Family
ID=26472369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT91304968T ATE198680T1 (de) | 1990-05-31 | 1991-05-31 | Verfahren zur herstellung einer halbleiteranordnung mit einem bipolartransistor |
Country Status (8)
Country | Link |
---|---|
US (2) | US5306934A (de) |
EP (1) | EP0462717B1 (de) |
KR (1) | KR950010283B1 (de) |
CN (1) | CN1035850C (de) |
AT (1) | ATE198680T1 (de) |
DE (1) | DE69132505T2 (de) |
MY (1) | MY107443A (de) |
SG (1) | SG43260A1 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5559044A (en) * | 1992-09-21 | 1996-09-24 | Siliconix Incorporated | BiCDMOS process technology |
JP2001085463A (ja) * | 1999-09-09 | 2001-03-30 | Rohm Co Ltd | 半導体チップおよびそれを用いた半導体装置 |
US6703707B1 (en) * | 1999-11-24 | 2004-03-09 | Denso Corporation | Semiconductor device having radiation structure |
JP2003017498A (ja) * | 2001-07-02 | 2003-01-17 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US6815801B2 (en) * | 2003-02-28 | 2004-11-09 | Texas Instrument Incorporated | Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer |
JP5048242B2 (ja) * | 2005-11-30 | 2012-10-17 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
US20120098142A1 (en) * | 2010-10-26 | 2012-04-26 | Stmicroelectronics S.R.L. | Electrical contact for a deep buried layer in a semi-conductor device |
US9722041B2 (en) | 2012-09-19 | 2017-08-01 | Vishay-Siliconix | Breakdown voltage blocking device |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1534896A (en) * | 1975-05-19 | 1978-12-06 | Itt | Direct metal contact to buried layer |
GB2038883B (en) * | 1978-11-09 | 1982-12-08 | Standard Telephones Cables Ltd | Metallizing semiconductor devices |
CN1004456B (zh) * | 1985-04-19 | 1989-06-07 | 三洋电机株式会社 | 半导体器件及其制造方法 |
JP2542676B2 (ja) * | 1987-07-02 | 1996-10-09 | 株式会社東芝 | ヘテロ接合バイポ―ラトランジスタ |
EP0306213A3 (de) * | 1987-09-02 | 1990-05-30 | AT&T Corp. | Submikron-Bipolartransistor mit seitlichen Kontakten |
US5270224A (en) * | 1988-03-11 | 1993-12-14 | Fujitsu Limited | Method of manufacturing a semiconductor device having a region doped to a level exceeding the solubility limit |
US5213999A (en) * | 1990-09-04 | 1993-05-25 | Delco Electronics Corporation | Method of metal filled trench buried contacts |
-
1991
- 1991-05-30 KR KR1019910008917A patent/KR950010283B1/ko not_active IP Right Cessation
- 1991-05-31 MY MYPI91000961A patent/MY107443A/en unknown
- 1991-05-31 CN CN91103964A patent/CN1035850C/zh not_active Expired - Fee Related
- 1991-05-31 SG SG1996006616A patent/SG43260A1/en unknown
- 1991-05-31 DE DE69132505T patent/DE69132505T2/de not_active Expired - Fee Related
- 1991-05-31 EP EP91304968A patent/EP0462717B1/de not_active Expired - Lifetime
- 1991-05-31 AT AT91304968T patent/ATE198680T1/de active
-
1992
- 1992-01-17 US US07/823,604 patent/US5306934A/en not_active Expired - Fee Related
-
1993
- 1993-10-01 US US08/130,461 patent/US5364802A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
MY107443A (en) | 1995-12-30 |
EP0462717B1 (de) | 2001-01-10 |
CN1059234A (zh) | 1992-03-04 |
US5306934A (en) | 1994-04-26 |
KR910020886A (ko) | 1991-12-20 |
US5364802A (en) | 1994-11-15 |
KR950010283B1 (ko) | 1995-09-12 |
DE69132505T2 (de) | 2001-06-28 |
EP0462717A3 (en) | 1992-04-08 |
EP0462717A2 (de) | 1991-12-27 |
DE69132505D1 (de) | 2001-02-15 |
SG43260A1 (en) | 1997-10-17 |
CN1035850C (zh) | 1997-09-10 |
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