ATE188574T1 - Verfahren zur herstellung einer integrierten schaltungsanordnung - Google Patents

Verfahren zur herstellung einer integrierten schaltungsanordnung

Info

Publication number
ATE188574T1
ATE188574T1 AT95307087T AT95307087T ATE188574T1 AT E188574 T1 ATE188574 T1 AT E188574T1 AT 95307087 T AT95307087 T AT 95307087T AT 95307087 T AT95307087 T AT 95307087T AT E188574 T1 ATE188574 T1 AT E188574T1
Authority
AT
Austria
Prior art keywords
indium
channel region
producing
integrated circuit
circuit arrangement
Prior art date
Application number
AT95307087T
Other languages
English (en)
Inventor
Mohammed Anjum
Alan L Stuber
Ibrahim K Burki
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of ATE188574T1 publication Critical patent/ATE188574T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
AT95307087T 1994-10-11 1995-10-06 Verfahren zur herstellung einer integrierten schaltungsanordnung ATE188574T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US32092494A 1994-10-11 1994-10-11

Publications (1)

Publication Number Publication Date
ATE188574T1 true ATE188574T1 (de) 2000-01-15

Family

ID=23248430

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95307087T ATE188574T1 (de) 1994-10-11 1995-10-06 Verfahren zur herstellung einer integrierten schaltungsanordnung

Country Status (6)

Country Link
US (1) US6331458B1 (de)
EP (1) EP0707345B1 (de)
JP (1) JP4260905B2 (de)
KR (1) KR960015811A (de)
AT (1) ATE188574T1 (de)
DE (1) DE69514307T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821147A (en) * 1995-12-11 1998-10-13 Lucent Technologies, Inc. Integrated circuit fabrication
WO1999035685A1 (en) * 1998-01-05 1999-07-15 Advanced Micro Devices, Inc. Integrated cmos transistor formation
US7091093B1 (en) * 1999-09-17 2006-08-15 Matsushita Electric Industrial Co., Ltd. Method for fabricating a semiconductor device having a pocket dopant diffused layer
JP2001094094A (ja) * 1999-09-21 2001-04-06 Hitachi Ltd 半導体装置およびその製造方法
JP2002076332A (ja) * 2000-08-24 2002-03-15 Hitachi Ltd 絶縁ゲート型電界効果トランジスタ及びその製造方法
KR100387536B1 (ko) * 2000-10-18 2003-06-18 주식회사 루밴틱스 광학 접착제 수지 조성물 및 광학 접착제 수지의 제조방법
KR20020037459A (ko) * 2000-11-14 2002-05-22 박성수 각종 카드에 인쇄되는 uv향기 잉크의 조성물
US6885078B2 (en) * 2001-11-09 2005-04-26 Lsi Logic Corporation Circuit isolation utilizing MeV implantation
US7189606B2 (en) * 2002-06-05 2007-03-13 Micron Technology, Inc. Method of forming fully-depleted (FD) SOI MOSFET access transistor
US6756619B2 (en) * 2002-08-26 2004-06-29 Micron Technology, Inc. Semiconductor constructions
KR100496551B1 (ko) * 2002-11-20 2005-06-22 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US6734070B1 (en) * 2003-03-17 2004-05-11 Oki Electric Industry Co., Ltd. Method of fabricating a semiconductor device with field-effect transistors having shallow source and drain junctions
US6949785B2 (en) * 2004-01-14 2005-09-27 Taiwan Semiconductor Manufacturing Co., Ltd. Random access memory (RAM) capacitor in shallow trench isolation with improved electrical isolation to overlying gate electrodes
US7071515B2 (en) * 2003-07-14 2006-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Narrow width effect improvement with photoresist plug process and STI corner ion implantation
JP2006186261A (ja) * 2004-12-28 2006-07-13 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7645687B2 (en) * 2005-01-20 2010-01-12 Chartered Semiconductor Manufacturing, Ltd. Method to fabricate variable work function gates for FUSI devices
KR100779395B1 (ko) * 2006-08-31 2007-11-23 동부일렉트로닉스 주식회사 반도체소자 및 그 제조방법
TWI418603B (zh) 2007-03-16 2013-12-11 Mitsubishi Gas Chemical Co 光穿透型電磁波屏蔽積層體及其製造方法、光穿透型電波吸收體，以及接著劑組成物
US8173503B2 (en) * 2009-02-23 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Fabrication of source/drain extensions with ultra-shallow junctions
JP5499780B2 (ja) * 2010-03-04 2014-05-21 富士通セミコンダクター株式会社 半導体装置及びその製造方法
EP2578650A4 (de) 2010-06-01 2015-02-25 Riken Technos Corp Zusammensetzung zur verwendung als beschichtungsmaterial, haftbindungsverfahren und laminierte produkte
US10553494B2 (en) * 2016-11-29 2020-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Breakdown resistant semiconductor apparatus and method of making same
JP6996858B2 (ja) * 2017-03-29 2022-01-17 旭化成エレクトロニクス株式会社 半導体装置及びその製造方法

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Publication number Priority date Publication date Assignee Title
US3883372A (en) * 1973-07-11 1975-05-13 Westinghouse Electric Corp Method of making a planar graded channel MOS transistor
JPS5952849A (ja) * 1982-09-20 1984-03-27 Fujitsu Ltd 半導体装置の製造方法
JPS60224271A (ja) 1984-04-20 1985-11-08 Nec Corp 半導体装置およびその製造方法
US4746964A (en) 1986-08-28 1988-05-24 Fairchild Semiconductor Corporation Modification of properties of p-type dopants with other p-type dopants
US4851360A (en) * 1986-09-29 1989-07-25 Texas Instruments Incorporated NMOS source/drain doping with both P and As
US4835112A (en) 1988-03-08 1989-05-30 Motorola, Inc. CMOS salicide process using germanium implantation
US5021851A (en) 1988-05-03 1991-06-04 Texas Instruments Incorporated NMOS source/drain doping with both P and As
US4889819A (en) * 1988-05-20 1989-12-26 International Business Machines Corporation Method for fabricating shallow junctions by preamorphizing with dopant of same conductivity as substrate
JPH02291150A (ja) * 1989-04-28 1990-11-30 Hitachi Ltd 半導体装置
US5134447A (en) * 1989-09-22 1992-07-28 At&T Bell Laboratories Neutral impurities to increase lifetime of operation of semiconductor devices
US5296401A (en) * 1990-01-11 1994-03-22 Mitsubishi Denki Kabushiki Kaisha MIS device having p channel MOS device and n channel MOS device with LDD structure and manufacturing method thereof
US5320974A (en) * 1991-07-25 1994-06-14 Matsushita Electric Industrial Co., Ltd. Method for making semiconductor transistor device by implanting punch through stoppers
US5266508A (en) * 1991-08-26 1993-11-30 Sharp Kabushiki Kaisha Process for manufacturing semiconductor device
US5344790A (en) * 1993-08-31 1994-09-06 Sgs-Thomson Microelectronics, Inc. Making integrated circuit transistor having drain junction offset

Also Published As

Publication number Publication date
EP0707345A1 (de) 1996-04-17
DE69514307T2 (de) 2000-08-10
JPH08250730A (ja) 1996-09-27
EP0707345B1 (de) 2000-01-05
KR960015811A (ko) 1996-05-22
JP4260905B2 (ja) 2009-04-30
DE69514307D1 (de) 2000-02-10
US6331458B1 (en) 2001-12-18

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