ATE161520T1 - Nitridprodukte und methode und apparat zu ihrer herstellung - Google Patents

Nitridprodukte und methode und apparat zu ihrer herstellung

Info

Publication number
ATE161520T1
ATE161520T1 AT90118780T AT90118780T ATE161520T1 AT E161520 T1 ATE161520 T1 AT E161520T1 AT 90118780 T AT90118780 T AT 90118780T AT 90118780 T AT90118780 T AT 90118780T AT E161520 T1 ATE161520 T1 AT E161520T1
Authority
AT
Austria
Prior art keywords
product
nitride compound
products
injected
combustion
Prior art date
Application number
AT90118780T
Other languages
English (en)
Inventor
George Francis Schuette
Kenneth E Inkrott
Bruce William Gerhold
Original Assignee
Phillips Petroleum Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Phillips Petroleum Co filed Critical Phillips Petroleum Co
Application granted granted Critical
Publication of ATE161520T1 publication Critical patent/ATE161520T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
    • B01J12/02—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor for obtaining at least one reaction product which, at normal temperature, is in the solid state
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/02—Amorphous compounds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/86—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by NMR- or ESR-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/51—Particles with a specific particle size distribution
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/10—Solid density
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Products (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
AT90118780T 1989-10-02 1990-10-01 Nitridprodukte und methode und apparat zu ihrer herstellung ATE161520T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/416,190 US5176893A (en) 1989-10-02 1989-10-02 Silicon nitride products and method for their production

Publications (1)

Publication Number Publication Date
ATE161520T1 true ATE161520T1 (de) 1998-01-15

Family

ID=23648951

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90118780T ATE161520T1 (de) 1989-10-02 1990-10-01 Nitridprodukte und methode und apparat zu ihrer herstellung

Country Status (12)

Country Link
US (1) US5176893A (de)
EP (1) EP0425825B1 (de)
JP (1) JP2644620B2 (de)
KR (1) KR970008980B1 (de)
AT (1) ATE161520T1 (de)
AU (1) AU625164B2 (de)
CA (1) CA2020508C (de)
DE (1) DE69031859T2 (de)
DK (1) DK0425825T3 (de)
ES (1) ES2110402T3 (de)
GR (1) GR3025939T3 (de)
NO (1) NO904274L (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
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US5178844A (en) * 1990-04-03 1993-01-12 Phillips Petroleum Company Method and apparatus for producing nitride products
US5302366A (en) * 1991-03-28 1994-04-12 Phillips Petroleum Company Production of silicon product containing both carbon and nitrogen
DE69213898T2 (de) * 1991-12-13 1997-02-06 Ford Werke Ag Metallnitridfilm
US5352395A (en) * 1992-07-17 1994-10-04 Phillips Petroleum Company Carbon and ceramic-containing layers for use in sintering of silicon nitride article
FR2708924B1 (fr) * 1993-08-12 1995-10-20 Saint Gobain Vitrage Int Procédé de dépôt d'une couche de nitrure métallique sur un substrat transparent.
FR2759362B1 (fr) * 1997-02-10 1999-03-12 Saint Gobain Vitrage Substrat transparent muni d'au moins une couche mince a base de nitrure ou d'oxynitrure de silicium et son procede d'obtention
US6517341B1 (en) * 1999-02-26 2003-02-11 General Electric Company Method to prevent recession loss of silica and silicon-containing materials in combustion gas environments
US20030188475A1 (en) * 2002-03-29 2003-10-09 Shabbir Ahmed Dynamic fuel processor with controlled declining temperatures
JP2007301687A (ja) * 2006-05-12 2007-11-22 Naoetsu Electronics Co Ltd ワーク切断装置
JP2008200772A (ja) * 2007-02-16 2008-09-04 Sharp Corp ワイヤソーおよびそれを用いたスラリーの再使用方法
JP2008213111A (ja) * 2007-03-06 2008-09-18 Sharp Corp マルチワイヤーソーおよびスラリー供給方法
US20100258233A1 (en) * 2007-11-06 2010-10-14 Mitsubishi Materials Corporation Ceramic substrate, method of manufacturing ceramic substrate, and method of manufacturing power module substrate
DE102012223195A1 (de) 2012-12-14 2014-06-18 Evonik Industries Ag Hochreine pulverförmige Halbmetallcarbid- und Halbmetallnitridverbindungen, Verfahren zu deren Herstellung und dafür geeigneter Reaktor
SG11201510759WA (en) * 2013-07-11 2016-02-26 Ube Industries Silicon nitride powder for mold release agent of casting mold for casting polycrystalline silicon ingot and method for manufacturing said silicon nitride powder, slurry containing said silicon nitride powder, casting mold for casting polycrystalline silicon ingot and method for manufacturing same, and method for manufacturing polycrystalline silicon ingot using said casting mold

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US2632713A (en) * 1948-10-29 1953-03-24 Phillips Petroleum Co Carbon black process
US2614946A (en) * 1950-03-17 1952-10-21 Carborundum Co Granular silicon carbide and method of making same
US3025192A (en) * 1959-01-02 1962-03-13 Norton Co Silicon carbide crystals and processes and furnaces for making them
US3275722A (en) * 1959-07-08 1966-09-27 Power Jets Res & Dev Ltd Production of dense bodies of silicon carbide
US3085863A (en) * 1960-11-01 1963-04-16 Gen Electric Method of making silicon carbide
US3253886A (en) * 1961-05-09 1966-05-31 Union Carbide Corp Process for producing ultrafine powders of refractory materials
DE1187591B (de) * 1961-09-08 1965-02-25 Degussa Verfahren zur Herstellung von Siliziumcarbid oder dieses enthaltenden Mischungen
US3161473A (en) * 1962-06-06 1964-12-15 Corning Glass Works Method of making beta-silicon carbide fibers
GB1050932A (de) * 1963-05-30
BE651736A (de) * 1963-08-13
US3346338A (en) * 1964-01-20 1967-10-10 Continental Carbon Co Production of finely divided silicon or titanium carbide
NL132104C (de) * 1965-02-15
US3399980A (en) * 1965-12-28 1968-09-03 Union Carbide Corp Metallic carbides and a process of producing the same
US3368871A (en) * 1966-12-05 1968-02-13 Ionics Fluidized bed process for the preparation of colloidal silicon carbide
US3839542A (en) * 1971-01-04 1974-10-01 American Cyanamid Co Method of making sub-micron particles of metal carbides of enlarged and controlled particle size
US3877876A (en) * 1972-08-30 1975-04-15 Phillips Petroleum Co Carbon black apparatus
US3979500A (en) * 1973-05-02 1976-09-07 Ppg Industries, Inc. Preparation of finely-divided refractory powders of groups III-V metal borides, carbides, nitrides, silicides and sulfides
US4036653A (en) * 1975-05-28 1977-07-19 E. I. Du Pont De Nemours And Company Amorphous silicon nitride composition containing carbon, and vapor phase process
CA1236853A (en) * 1975-12-03 1988-05-17 Frederick G. Stroke SUBMICRON .beta. SILICON CARBIDE POWDER AND SINTERED ARTICLES OF HIGH DENSITY PREPARED THEREFROM
CA1084235A (en) * 1976-05-24 1980-08-26 Ryo Enomoto PROCESS AND AN APPARATUS FOR PRODUCING SILICON CARBIDE CONSISTING MAINLY OF .beta.-TYPE CRYSTAL
JPS54122312A (en) * 1978-03-15 1979-09-21 Hiroshige Suzuki Silicon carbide powder for sintering use and preparation thereof
US4188368A (en) * 1978-03-29 1980-02-12 Nasa Method of producing silicon
JPS54132500A (en) * 1978-04-05 1979-10-15 Toshiba Ceramics Co Manufacture of silicon nitride powder
JPS5595605A (en) * 1979-01-10 1980-07-21 Toyo Soda Mfg Co Ltd High purity silicon nitride and production thereof
JPS5673616A (en) * 1979-11-22 1981-06-18 Toshiba Corp Manufacture of silicon carbide
US4284612A (en) * 1980-01-28 1981-08-18 Great Lakes Carbon Corporation Preparation of SiC whiskers
US4248844A (en) * 1980-01-28 1981-02-03 Great Lakes Carbon Corporation Production of SiC from rice hulls and silica
US4283375A (en) * 1980-01-28 1981-08-11 Great Lakes Carbon Corporation Production of SiC whiskers
DE3023297C2 (de) * 1980-06-21 1988-05-05 International Minerals & Chemical Luxembourg S.A., 2010 Luxembourg Verfahren zur Herstellung eines Vorproduktes für die Erzeugung von Siliziumcarbid
US4431749A (en) * 1981-05-05 1984-02-14 Ashland Oil, Inc. Large pore catalysts for heavy hydrocarbon conversion
JPS6044280B2 (ja) * 1982-02-25 1985-10-02 東海カ−ボン株式会社 炭化けい素ウイスカ−の製造方法
DE3371295D1 (en) * 1982-03-01 1987-06-11 Toyota Motor Co Ltd A method and apparatus for making a fine powder compound of a metal and another element
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Also Published As

Publication number Publication date
CA2020508A1 (en) 1991-04-03
AU6240090A (en) 1991-08-01
US5176893A (en) 1993-01-05
NO904274D0 (no) 1990-10-01
NO904274L (no) 1991-04-03
KR970008980B1 (en) 1997-06-03
AU625164B2 (en) 1992-07-02
DE69031859D1 (de) 1998-02-05
JPH03126605A (ja) 1991-05-29
ES2110402T3 (es) 1998-02-16
CA2020508C (en) 1998-09-29
KR910007799A (ko) 1991-05-30
EP0425825B1 (de) 1997-12-29
JP2644620B2 (ja) 1997-08-25
EP0425825A1 (de) 1991-05-08
DE69031859T2 (de) 1998-04-16
GR3025939T3 (en) 1998-04-30
DK0425825T3 (da) 1998-01-19

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee