DE69031859D1 - Nitridprodukte und Methode und Apparat zu ihrer Herstellung - Google Patents

Nitridprodukte und Methode und Apparat zu ihrer Herstellung

Info

Publication number
DE69031859D1
DE69031859D1 DE69031859T DE69031859T DE69031859D1 DE 69031859 D1 DE69031859 D1 DE 69031859D1 DE 69031859 T DE69031859 T DE 69031859T DE 69031859 T DE69031859 T DE 69031859T DE 69031859 D1 DE69031859 D1 DE 69031859D1
Authority
DE
Germany
Prior art keywords
product
nitride compound
products
injected
combustion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69031859T
Other languages
English (en)
Other versions
DE69031859T2 (de
Inventor
George Francis Schuette
Kenneth E Inkrott
Bruce William Gerhold
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Phillips Petroleum Co
Original Assignee
Phillips Petroleum Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Phillips Petroleum Co filed Critical Phillips Petroleum Co
Application granted granted Critical
Publication of DE69031859D1 publication Critical patent/DE69031859D1/de
Publication of DE69031859T2 publication Critical patent/DE69031859T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
    • B01J12/02—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor for obtaining at least one reaction product which, at normal temperature, is in the solid state
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/02—Amorphous compounds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/86—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by NMR- or ESR-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/51—Particles with a specific particle size distribution
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/10—Solid density
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Products (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
DE69031859T 1989-10-02 1990-10-01 Nitridprodukte und Methode und Apparat zu ihrer Herstellung Expired - Fee Related DE69031859T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/416,190 US5176893A (en) 1989-10-02 1989-10-02 Silicon nitride products and method for their production

Publications (2)

Publication Number Publication Date
DE69031859D1 true DE69031859D1 (de) 1998-02-05
DE69031859T2 DE69031859T2 (de) 1998-04-16

Family

ID=23648951

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69031859T Expired - Fee Related DE69031859T2 (de) 1989-10-02 1990-10-01 Nitridprodukte und Methode und Apparat zu ihrer Herstellung

Country Status (12)

Country Link
US (1) US5176893A (de)
EP (1) EP0425825B1 (de)
JP (1) JP2644620B2 (de)
KR (1) KR970008980B1 (de)
AT (1) ATE161520T1 (de)
AU (1) AU625164B2 (de)
CA (1) CA2020508C (de)
DE (1) DE69031859T2 (de)
DK (1) DK0425825T3 (de)
ES (1) ES2110402T3 (de)
GR (1) GR3025939T3 (de)
NO (1) NO904274L (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
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US5178844A (en) * 1990-04-03 1993-01-12 Phillips Petroleum Company Method and apparatus for producing nitride products
US5302366A (en) * 1991-03-28 1994-04-12 Phillips Petroleum Company Production of silicon product containing both carbon and nitrogen
EP0546670B2 (de) 1991-12-13 2000-11-08 Ford Motor Company Limited Metallnitridfilm
US5352395A (en) * 1992-07-17 1994-10-04 Phillips Petroleum Company Carbon and ceramic-containing layers for use in sintering of silicon nitride article
FR2708924B1 (fr) * 1993-08-12 1995-10-20 Saint Gobain Vitrage Int Procédé de dépôt d'une couche de nitrure métallique sur un substrat transparent.
FR2759362B1 (fr) * 1997-02-10 1999-03-12 Saint Gobain Vitrage Substrat transparent muni d'au moins une couche mince a base de nitrure ou d'oxynitrure de silicium et son procede d'obtention
US6517341B1 (en) * 1999-02-26 2003-02-11 General Electric Company Method to prevent recession loss of silica and silicon-containing materials in combustion gas environments
US20030188475A1 (en) * 2002-03-29 2003-10-09 Shabbir Ahmed Dynamic fuel processor with controlled declining temperatures
JP2007301687A (ja) * 2006-05-12 2007-11-22 Naoetsu Electronics Co Ltd ワーク切断装置
JP2008200772A (ja) * 2007-02-16 2008-09-04 Sharp Corp ワイヤソーおよびそれを用いたスラリーの再使用方法
JP2008213111A (ja) * 2007-03-06 2008-09-18 Sharp Corp マルチワイヤーソーおよびスラリー供給方法
US20100258233A1 (en) * 2007-11-06 2010-10-14 Mitsubishi Materials Corporation Ceramic substrate, method of manufacturing ceramic substrate, and method of manufacturing power module substrate
DE102012223195A1 (de) 2012-12-14 2014-06-18 Evonik Industries Ag Hochreine pulverförmige Halbmetallcarbid- und Halbmetallnitridverbindungen, Verfahren zu deren Herstellung und dafür geeigneter Reaktor
US20160159648A1 (en) * 2013-07-11 2016-06-09 Ube Industries, Ltd. Silicon nitride powder for mold release agent of casting mold for casting polycrystalline silicon ingot and method for manufacturing said silicon nitride powder, slurry containing said silicon nitride powder, casting mold for casting polycrystalline silicon ingot and method for manufacturing same, and method for manufacturing polycrystalline silicon ingot using said casting mold

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US2632713A (en) * 1948-10-29 1953-03-24 Phillips Petroleum Co Carbon black process
US2614946A (en) * 1950-03-17 1952-10-21 Carborundum Co Granular silicon carbide and method of making same
US3025192A (en) * 1959-01-02 1962-03-13 Norton Co Silicon carbide crystals and processes and furnaces for making them
US3275722A (en) * 1959-07-08 1966-09-27 Power Jets Res & Dev Ltd Production of dense bodies of silicon carbide
US3085863A (en) * 1960-11-01 1963-04-16 Gen Electric Method of making silicon carbide
US3253886A (en) * 1961-05-09 1966-05-31 Union Carbide Corp Process for producing ultrafine powders of refractory materials
DE1187591B (de) * 1961-09-08 1965-02-25 Degussa Verfahren zur Herstellung von Siliziumcarbid oder dieses enthaltenden Mischungen
US3161473A (en) * 1962-06-06 1964-12-15 Corning Glass Works Method of making beta-silicon carbide fibers
GB1050932A (de) * 1963-05-30
BE651736A (de) * 1963-08-13
US3346338A (en) * 1964-01-20 1967-10-10 Continental Carbon Co Production of finely divided silicon or titanium carbide
NL132104C (de) * 1965-02-15
US3399980A (en) * 1965-12-28 1968-09-03 Union Carbide Corp Metallic carbides and a process of producing the same
US3368871A (en) * 1966-12-05 1968-02-13 Ionics Fluidized bed process for the preparation of colloidal silicon carbide
US3839542A (en) * 1971-01-04 1974-10-01 American Cyanamid Co Method of making sub-micron particles of metal carbides of enlarged and controlled particle size
US3877876A (en) * 1972-08-30 1975-04-15 Phillips Petroleum Co Carbon black apparatus
US3979500A (en) * 1973-05-02 1976-09-07 Ppg Industries, Inc. Preparation of finely-divided refractory powders of groups III-V metal borides, carbides, nitrides, silicides and sulfides
US4036653A (en) * 1975-05-28 1977-07-19 E. I. Du Pont De Nemours And Company Amorphous silicon nitride composition containing carbon, and vapor phase process
CA1236853A (en) * 1975-12-03 1988-05-17 Frederick G. Stroke SUBMICRON .beta. SILICON CARBIDE POWDER AND SINTERED ARTICLES OF HIGH DENSITY PREPARED THEREFROM
CA1084235A (en) * 1976-05-24 1980-08-26 Ryo Enomoto PROCESS AND AN APPARATUS FOR PRODUCING SILICON CARBIDE CONSISTING MAINLY OF .beta.-TYPE CRYSTAL
JPS54122312A (en) * 1978-03-15 1979-09-21 Hiroshige Suzuki Silicon carbide powder for sintering use and preparation thereof
US4188368A (en) * 1978-03-29 1980-02-12 Nasa Method of producing silicon
JPS54132500A (en) * 1978-04-05 1979-10-15 Toshiba Ceramics Co Manufacture of silicon nitride powder
JPS5595605A (en) * 1979-01-10 1980-07-21 Toyo Soda Mfg Co Ltd High purity silicon nitride and production thereof
JPS5673616A (en) * 1979-11-22 1981-06-18 Toshiba Corp Manufacture of silicon carbide
US4283375A (en) * 1980-01-28 1981-08-11 Great Lakes Carbon Corporation Production of SiC whiskers
US4284612A (en) * 1980-01-28 1981-08-18 Great Lakes Carbon Corporation Preparation of SiC whiskers
US4248844A (en) * 1980-01-28 1981-02-03 Great Lakes Carbon Corporation Production of SiC from rice hulls and silica
DE3023297C2 (de) * 1980-06-21 1988-05-05 International Minerals & Chemical Luxembourg S.A., 2010 Luxembourg Verfahren zur Herstellung eines Vorproduktes für die Erzeugung von Siliziumcarbid
US4431749A (en) * 1981-05-05 1984-02-14 Ashland Oil, Inc. Large pore catalysts for heavy hydrocarbon conversion
JPS6044280B2 (ja) * 1982-02-25 1985-10-02 東海カ−ボン株式会社 炭化けい素ウイスカ−の製造方法
EP0087798B1 (de) * 1982-03-01 1987-05-06 Toyota Jidosha Kabushiki Kaisha Verfahren und Vorrichtung zur Herstellung einer feinpulvrigen Verbindung eines Metalls und eines anderen Elements
US4419336A (en) * 1982-03-29 1983-12-06 Norton Company Silicon carbide production and furnace
JPS6052119B2 (ja) * 1982-04-01 1985-11-18 タテホ化学工業株式会社 窒化珪素ウイスカ−の製造方法
JPS6052120B2 (ja) * 1982-06-04 1985-11-18 タテホ化学工業株式会社 炭化珪素の製造方法
US4435476A (en) * 1982-08-18 1984-03-06 Foster Grant Corporation Method of making an abrasion resistant coating on a solid substrate and articles produced thereby
CA1214309A (en) * 1982-09-14 1986-11-25 Yukihiro Yoda Process for preparing metal carbides and precursors thereof
US4543344A (en) * 1983-11-28 1985-09-24 Dow Corning Corporation Silicon nitride-containing ceramic material prepared by pyrolysis of hydrosilazane polymers from (R3 Si)2 NH and HSiCl3
US4571331A (en) * 1983-12-12 1986-02-18 Shin-Etsu Chemical Co., Ltd. Ultrafine powder of silicon carbide, a method for the preparation thereof and a sintered body therefrom
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Also Published As

Publication number Publication date
ES2110402T3 (es) 1998-02-16
EP0425825A1 (de) 1991-05-08
NO904274D0 (no) 1990-10-01
CA2020508C (en) 1998-09-29
CA2020508A1 (en) 1991-04-03
NO904274L (no) 1991-04-03
AU6240090A (en) 1991-08-01
ATE161520T1 (de) 1998-01-15
DE69031859T2 (de) 1998-04-16
EP0425825B1 (de) 1997-12-29
JP2644620B2 (ja) 1997-08-25
KR910007799A (ko) 1991-05-30
US5176893A (en) 1993-01-05
DK0425825T3 (da) 1998-01-19
JPH03126605A (ja) 1991-05-29
GR3025939T3 (en) 1998-04-30
AU625164B2 (en) 1992-07-02
KR970008980B1 (en) 1997-06-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee