ATE143530T1 - Niederspannungsbauelement in einem substrat für hohe spannungen - Google Patents

Niederspannungsbauelement in einem substrat für hohe spannungen

Info

Publication number
ATE143530T1
ATE143530T1 AT91306667T AT91306667T ATE143530T1 AT E143530 T1 ATE143530 T1 AT E143530T1 AT 91306667 T AT91306667 T AT 91306667T AT 91306667 T AT91306667 T AT 91306667T AT E143530 T1 ATE143530 T1 AT E143530T1
Authority
AT
Austria
Prior art keywords
well
conductivity type
transistor
source
low voltage
Prior art date
Application number
AT91306667T
Other languages
English (en)
Inventor
Michael G Ahrens
Douglas C Galbraith
Abdelshafy A Eltoukhy
Original Assignee
Actel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Actel Corp filed Critical Actel Corp
Application granted granted Critical
Publication of ATE143530T1 publication Critical patent/ATE143530T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8314—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having gate insulating layers with different properties

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
AT91306667T 1990-09-28 1991-07-22 Niederspannungsbauelement in einem substrat für hohe spannungen ATE143530T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59027790A 1990-09-28 1990-09-28

Publications (1)

Publication Number Publication Date
ATE143530T1 true ATE143530T1 (de) 1996-10-15

Family

ID=24361606

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91306667T ATE143530T1 (de) 1990-09-28 1991-07-22 Niederspannungsbauelement in einem substrat für hohe spannungen

Country Status (4)

Country Link
EP (1) EP0478123B1 (de)
JP (1) JPH0621354A (de)
AT (1) ATE143530T1 (de)
DE (1) DE69122342T2 (de)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3916430A (en) * 1973-03-14 1975-10-28 Rca Corp System for eliminating substrate bias effect in field effect transistor circuits
US4099069A (en) * 1976-10-08 1978-07-04 Westinghouse Electric Corp. Circuit producing a common clear signal for erasing selected arrays in a mnos memory system
JPS59121976A (ja) * 1982-12-28 1984-07-14 Fujitsu Ltd 半導体装置
JPH01147854A (ja) * 1987-12-04 1989-06-09 Nissan Motor Co Ltd 半導体装置

Also Published As

Publication number Publication date
DE69122342T2 (de) 1997-02-06
EP0478123A1 (de) 1992-04-01
JPH0621354A (ja) 1994-01-28
DE69122342D1 (de) 1996-10-31
EP0478123B1 (de) 1996-09-25

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Legal Events

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