ATE101748T1 - Herstellung von halbleitervorrichtungen. - Google Patents
Herstellung von halbleitervorrichtungen.Info
- Publication number
- ATE101748T1 ATE101748T1 AT87302815T AT87302815T ATE101748T1 AT E101748 T1 ATE101748 T1 AT E101748T1 AT 87302815 T AT87302815 T AT 87302815T AT 87302815 T AT87302815 T AT 87302815T AT E101748 T1 ATE101748 T1 AT E101748T1
- Authority
- AT
- Austria
- Prior art keywords
- layer
- semiconductor devices
- zinc
- protective layer
- arsenic
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/015—Capping layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/119—Phosphides of gallium or indium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/902—Capping layer
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB868609190A GB8609190D0 (en) | 1986-04-15 | 1986-04-15 | Semiconductor devices |
EP87302815A EP0242084B1 (de) | 1986-04-15 | 1987-03-31 | Herstellung von Halbleitervorrichtungen |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE101748T1 true ATE101748T1 (de) | 1994-03-15 |
Family
ID=10596229
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT87302815T ATE101748T1 (de) | 1986-04-15 | 1987-03-31 | Herstellung von halbleitervorrichtungen. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4981814A (de) |
EP (1) | EP0242084B1 (de) |
JP (1) | JPS62266826A (de) |
AT (1) | ATE101748T1 (de) |
CA (1) | CA1297211C (de) |
DE (1) | DE3789067T2 (de) |
GB (1) | GB8609190D0 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5124278A (en) * | 1990-09-21 | 1992-06-23 | Air Products And Chemicals, Inc. | Amino replacements for arsine, antimony and phosphine |
US5264397A (en) * | 1991-02-15 | 1993-11-23 | The Whitaker Corporation | Method for activating zinc in semiconductor devices |
JPH07242399A (ja) * | 1994-03-07 | 1995-09-19 | Mitsubishi Heavy Ind Ltd | 自走式作業足場、高所作業車等作業装置の操作制御方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4116733A (en) * | 1977-10-06 | 1978-09-26 | Rca Corporation | Vapor phase growth technique of III-V compounds utilizing a preheating step |
US4238252A (en) * | 1979-07-11 | 1980-12-09 | Hughes Aircraft Company | Process for growing indium phosphide of controlled purity |
US4266986A (en) * | 1979-11-29 | 1981-05-12 | Bell Telephone Laboratories, Incorporated | Passivation of defects in laser annealed semiconductors |
US4263064A (en) * | 1980-02-19 | 1981-04-21 | The United States Of America As Represented By The Secretary Of The Navy | Method of liquid phase epitaxial growth |
DE3172368D1 (en) * | 1980-11-18 | 1985-10-24 | British Telecomm | Improvements in the manufacture of group iiib-vb compounds |
US4422888A (en) * | 1981-02-27 | 1983-12-27 | Xerox Corporation | Method for successfully depositing doped II-VI epitaxial layers by organometallic chemical vapor deposition |
US4468850A (en) * | 1982-03-29 | 1984-09-04 | Massachusetts Institute Of Technology | GaInAsP/InP Double-heterostructure lasers |
US4484332A (en) * | 1982-06-02 | 1984-11-20 | The United States Of America As Represented By The Secretary Of The Air Force | Multiple double heterojunction buried laser device |
US4540450A (en) * | 1982-06-02 | 1985-09-10 | The United States Of America As Represented By The Secretary Of The Air Force | InP:Te Protective layer process for reducing substrate dissociation |
US4482423A (en) * | 1982-06-25 | 1984-11-13 | At&T Bell Laboratories | Protection of semiconductor substrates during epitaxial growth processes |
DE3379059D1 (en) * | 1982-10-19 | 1989-03-02 | Secr Defence Brit | Organometallic chemical vapour deposition of films |
JPS59197182A (ja) * | 1983-04-25 | 1984-11-08 | Nec Corp | 分布帰還型半導体レ−ザ |
JPS59197185A (ja) * | 1983-04-25 | 1984-11-08 | Nec Corp | 分布帰還型半導体レ−ザ |
US4544417A (en) * | 1983-05-27 | 1985-10-01 | Westinghouse Electric Corp. | Transient capless annealing process for the activation of ion implanted compound semiconductors |
US4566171A (en) * | 1983-06-20 | 1986-01-28 | At&T Bell Laboratories | Elimination of mask undercutting in the fabrication of InP/InGaAsP BH devices |
US4608586A (en) * | 1984-05-11 | 1986-08-26 | At&T Bell Laboratories | Back-illuminated photodiode with a wide bandgap cap layer |
US4610731A (en) * | 1985-04-03 | 1986-09-09 | At&T Bell Laboratories | Shallow impurity neutralization |
US4659401A (en) * | 1985-06-10 | 1987-04-21 | Massachusetts Institute Of Technology | Growth of epitaxial films by plasma enchanced chemical vapor deposition (PE-CVD) |
-
1986
- 1986-04-15 GB GB868609190A patent/GB8609190D0/en active Pending
-
1987
- 1987-03-31 EP EP87302815A patent/EP0242084B1/de not_active Expired - Lifetime
- 1987-03-31 AT AT87302815T patent/ATE101748T1/de not_active IP Right Cessation
- 1987-03-31 DE DE3789067T patent/DE3789067T2/de not_active Expired - Lifetime
- 1987-04-09 CA CA000534314A patent/CA1297211C/en not_active Expired - Lifetime
- 1987-04-15 JP JP62092930A patent/JPS62266826A/ja active Granted
-
1989
- 1989-08-03 US US07/393,102 patent/US4981814A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB8609190D0 (en) | 1986-05-21 |
DE3789067T2 (de) | 1994-05-19 |
EP0242084A1 (de) | 1987-10-21 |
CA1297211C (en) | 1992-03-10 |
EP0242084B1 (de) | 1994-02-16 |
US4981814A (en) | 1991-01-01 |
DE3789067D1 (de) | 1994-03-24 |
JPS62266826A (ja) | 1987-11-19 |
JPH0581197B2 (de) | 1993-11-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO1992013363A3 (en) | Light emitting diode bars and arrays and method of making same | |
FR2487121B1 (de) | ||
EP0390552A3 (de) | Verfahren zur Herstellung einer Dünnschichthalbleiterlegierung | |
ATE110190T1 (de) | Heteroübergang-bipolartransistor. | |
KR900001874A (ko) | 아르신, 안티모니 및 포스핀 치환물 | |
KR860700072A (ko) | 단결정 실리콘 기판과 단결정 막의 합성물 및 그 형성방법 | |
CA2059407A1 (en) | Gaas device fabrication and devices so produced | |
ATE101748T1 (de) | Herstellung von halbleitervorrichtungen. | |
ATE137360T1 (de) | Halbleiterstrukturen und deren herstellungsverfahren | |
ATE32288T1 (de) | Verfahren zur herstellung von a3b5lumineszenzdioden. | |
GB1173162A (en) | Injection-Luminescent Diodes | |
CA2088800A1 (en) | Method for manufacturing semiconductor light-receiving elements | |
JPS5737827A (en) | Manufacture of semiconductor device | |
KR970051984A (ko) | 화합물 반도체의 에피텍시 성장방법 | |
GB1098564A (en) | A method for producing gallium arsenide devices | |
KR880003401A (ko) | 고속 반도체장치 및 그 제조방법 | |
JPS57145311A (en) | Heat treatment for compound semiconductor wafer | |
JPS5670676A (en) | Luminous diode | |
JPS56112720A (en) | Supperssion of thermal denaturation of compound semiconductor | |
GB1267323A (en) | Injection type light emitting diode and method of making same | |
US4889830A (en) | Zinc diffusion in the presence of cadmium into indium phosphide | |
JPS5673431A (en) | Manufacture of thin plate semiconductor device | |
JPS6430285A (en) | Manufacture of semiconductor laser | |
CA2008946A1 (en) | Vapor-phase epitaxial growth method | |
JPS6450591A (en) | Semiconductor device and manufacture thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |