JPS57145311A - Heat treatment for compound semiconductor wafer - Google Patents
Heat treatment for compound semiconductor waferInfo
- Publication number
- JPS57145311A JPS57145311A JP3032381A JP3032381A JPS57145311A JP S57145311 A JPS57145311 A JP S57145311A JP 3032381 A JP3032381 A JP 3032381A JP 3032381 A JP3032381 A JP 3032381A JP S57145311 A JPS57145311 A JP S57145311A
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- compound semiconductor
- misfit
- contaminated
- quality
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001875 compounds Chemical class 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000010438 heat treatment Methods 0.000 title abstract 3
- 239000013078 crystal Substances 0.000 abstract 3
- 230000017105 transposition Effects 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000012300 argon atmosphere Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 229910001385 heavy metal Inorganic materials 0.000 abstract 1
- 238000005979 thermal decomposition reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To improve the quality of a compound semiconductor crystal which is contaminated by a heavy metal by covering III-V group semiconductor compound wafer with a thermal decomposition controlling protection film in a condition having a misfit transposition based on grating constant difference. CONSTITUTION:As an example, a three-dimensional mixed crystal of Ga Aso9Po is formed at 1.2mu by a vapor growth processing on the surface of GaAs epitaxial wafer for infrared ray luminous diode use and a misfit transposition is introduced. The surface of the GaAso9Po layer is covered with Si3N4 film of 0.1mu and a heat treatment is provided for the surface at 850 deg.C for 5hr in an argon atmosphere. The light emitting effect due to the heat treatment as described above can be improved remarkably and the quality of the compound semiconductor crystal contaminated also be improved remarkably.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3032381A JPS57145311A (en) | 1981-03-03 | 1981-03-03 | Heat treatment for compound semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3032381A JPS57145311A (en) | 1981-03-03 | 1981-03-03 | Heat treatment for compound semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57145311A true JPS57145311A (en) | 1982-09-08 |
Family
ID=12300589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3032381A Pending JPS57145311A (en) | 1981-03-03 | 1981-03-03 | Heat treatment for compound semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57145311A (en) |
-
1981
- 1981-03-03 JP JP3032381A patent/JPS57145311A/en active Pending
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