AT386907B - Halbleiteranordnung mit in einem hableiterkoerper angeordneten bipolartransistor und diode - Google Patents
Halbleiteranordnung mit in einem hableiterkoerper angeordneten bipolartransistor und diodeInfo
- Publication number
- AT386907B AT386907B AT0468281A AT468281A AT386907B AT 386907 B AT386907 B AT 386907B AT 0468281 A AT0468281 A AT 0468281A AT 468281 A AT468281 A AT 468281A AT 386907 B AT386907 B AT 386907B
- Authority
- AT
- Austria
- Prior art keywords
- bipolar transistor
- semiconductor arrangement
- temperature body
- diode arranged
- diode
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8005995A NL8005995A (nl) | 1980-11-03 | 1980-11-03 | Halfgeleiderinrichting. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ATA468281A ATA468281A (de) | 1988-03-15 |
| AT386907B true AT386907B (de) | 1988-11-10 |
Family
ID=19836098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT0468281A AT386907B (de) | 1980-11-03 | 1981-11-02 | Halbleiteranordnung mit in einem hableiterkoerper angeordneten bipolartransistor und diode |
Country Status (11)
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3331631A1 (de) * | 1982-09-01 | 1984-03-01 | Mitsubishi Denki K.K., Tokyo | Halbleiter-bauelement |
| JPS60154552A (ja) * | 1984-01-23 | 1985-08-14 | Mitsubishi Electric Corp | 電力用半導体装置 |
| JPS6165762U (US20080094685A1-20080424-C00004.png) * | 1984-10-03 | 1986-05-06 | ||
| JPH0770539B2 (ja) * | 1985-02-01 | 1995-07-31 | サンケン電気株式会社 | トランジスタ |
| CH668505A5 (de) * | 1985-03-20 | 1988-12-30 | Bbc Brown Boveri & Cie | Halbleiterbauelement. |
| JPH0654796B2 (ja) * | 1986-07-14 | 1994-07-20 | 株式会社日立製作所 | 複合半導体装置 |
| US4974260A (en) * | 1989-06-02 | 1990-11-27 | Eastman Kodak Company | Apparatus for identifying and correcting unrecognizable characters in optical character recognition machines |
| GB2239986A (en) * | 1990-01-10 | 1991-07-17 | Philips Electronic Associated | A semiconductor device with increased breakdown voltage |
| DE69528683T2 (de) * | 1994-04-15 | 2003-06-12 | Toshiba Kawasaki Kk | Halbleiterbauteil und Verfahren zur Herstellung desselben |
| US6004840A (en) * | 1994-04-15 | 1999-12-21 | Kabushiki Kaisha Toshiba | Method of fabricating a semiconductor device comprising a MOS portion and a bipolar portion |
| US6839305B2 (en) * | 2001-02-16 | 2005-01-04 | Neil Perlman | Habit cessation aide |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3936863A (en) * | 1974-09-09 | 1976-02-03 | Rca Corporation | Integrated power transistor with ballasting resistance and breakdown protection |
| DE2718644B1 (de) * | 1977-04-27 | 1978-11-02 | Itt Ind Gmbh Deutsche | Monolithisch integrierte Halbleiterdiodenanordnung und deren Verwendung als Gehoerschutzgleichrichter |
| DE2913536A1 (de) * | 1978-04-07 | 1979-10-18 | Philips Nv | Halbleiteranordnung |
| DE2911536A1 (de) * | 1978-10-30 | 1980-06-04 | Hitachi Ltd | Halbleiteranordnung, verfahren zu ihrer herstellung und verwendung derselben |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2206353A1 (de) * | 1971-02-11 | 1972-10-26 | Motorola Inc., Franklin Park, 111. (V.StA.) | Integrierter Transistor und Emitter-Kollektor-Diode |
| JPS5138289U (US20080094685A1-20080424-C00004.png) * | 1974-09-13 | 1976-03-22 | ||
| FR2302594A1 (fr) * | 1975-02-28 | 1976-09-24 | Radiotechnique Compelec | Dispositif semi-conducteur integre |
| US4017882A (en) * | 1975-12-15 | 1977-04-12 | Rca Corporation | Transistor having integrated protection |
| JPS5559769A (en) * | 1978-10-30 | 1980-05-06 | Nec Corp | Switching transistor |
-
1980
- 1980-11-03 NL NL8005995A patent/NL8005995A/nl not_active Application Discontinuation
-
1981
- 1981-10-13 US US06/310,581 patent/US4530000A/en not_active Expired - Fee Related
- 1981-10-28 DE DE3142644A patent/DE3142644C2/de not_active Expired
- 1981-10-29 SE SE8106377A patent/SE457395B/sv not_active IP Right Cessation
- 1981-10-29 SE SE8106377D patent/SE8106377L/xx not_active Application Discontinuation
- 1981-10-29 CA CA000389056A patent/CA1173568A/en not_active Expired
- 1981-10-30 JP JP56173170A patent/JPS57106075A/ja active Pending
- 1981-10-30 IT IT24803/81A patent/IT1139664B/it active
- 1981-10-30 FR FR8120434A patent/FR2493603B1/fr not_active Expired
- 1981-10-30 AU AU76994/81A patent/AU545211B2/en not_active Ceased
- 1981-10-30 GB GB8132751A patent/GB2086655B/en not_active Expired
- 1981-11-02 AT AT0468281A patent/AT386907B/de not_active IP Right Cessation
-
1990
- 1990-08-22 JP JP1990087079U patent/JPH0336132U/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3936863A (en) * | 1974-09-09 | 1976-02-03 | Rca Corporation | Integrated power transistor with ballasting resistance and breakdown protection |
| DE2718644B1 (de) * | 1977-04-27 | 1978-11-02 | Itt Ind Gmbh Deutsche | Monolithisch integrierte Halbleiterdiodenanordnung und deren Verwendung als Gehoerschutzgleichrichter |
| DE2913536A1 (de) * | 1978-04-07 | 1979-10-18 | Philips Nv | Halbleiteranordnung |
| DE2911536A1 (de) * | 1978-10-30 | 1980-06-04 | Hitachi Ltd | Halbleiteranordnung, verfahren zu ihrer herstellung und verwendung derselben |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0336132U (US20080094685A1-20080424-C00004.png) | 1991-04-09 |
| DE3142644C2 (de) | 1986-09-11 |
| IT8124803A0 (it) | 1981-10-30 |
| CA1173568A (en) | 1984-08-28 |
| SE8106377L (sv) | 1982-05-04 |
| NL8005995A (nl) | 1982-06-01 |
| DE3142644A1 (de) | 1982-06-24 |
| IT1139664B (it) | 1986-09-24 |
| AU7699481A (en) | 1982-05-13 |
| ATA468281A (de) | 1988-03-15 |
| AU545211B2 (en) | 1985-07-04 |
| SE457395B (sv) | 1988-12-19 |
| GB2086655B (en) | 1984-04-18 |
| JPS57106075A (en) | 1982-07-01 |
| FR2493603A1 (fr) | 1982-05-07 |
| GB2086655A (en) | 1982-05-12 |
| US4530000A (en) | 1985-07-16 |
| FR2493603B1 (fr) | 1986-06-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ELJ | Ceased due to non-payment of the annual fee |