AT370561B - Oberflaechenpassivierter halbleiterbauteil - Google Patents

Oberflaechenpassivierter halbleiterbauteil

Info

Publication number
AT370561B
AT370561B AT0818475A AT818475A AT370561B AT 370561 B AT370561 B AT 370561B AT 0818475 A AT0818475 A AT 0818475A AT 818475 A AT818475 A AT 818475A AT 370561 B AT370561 B AT 370561B
Authority
AT
Austria
Prior art keywords
semiconductor component
passivated semiconductor
passivated
component
semiconductor
Prior art date
Application number
AT0818475A
Other languages
German (de)
English (en)
Other versions
ATA818475A (de
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of ATA818475A publication Critical patent/ATA818475A/de
Application granted granted Critical
Publication of AT370561B publication Critical patent/AT370561B/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3192—Multilayer coating
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
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    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
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    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
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    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/905—Plural dram cells share common contact or common trench

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Non-Volatile Memory (AREA)
  • Formation Of Insulating Films (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
AT0818475A 1974-10-26 1975-10-27 Oberflaechenpassivierter halbleiterbauteil AT370561B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49123765A JPS6022497B2 (ja) 1974-10-26 1974-10-26 半導体装置

Publications (2)

Publication Number Publication Date
ATA818475A ATA818475A (de) 1982-08-15
AT370561B true AT370561B (de) 1983-04-11

Family

ID=14868714

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0818475A AT370561B (de) 1974-10-26 1975-10-27 Oberflaechenpassivierter halbleiterbauteil

Country Status (15)

Country Link
US (1) US4063275A (US06649357-20031118-C00005.png)
JP (1) JPS6022497B2 (US06649357-20031118-C00005.png)
AT (1) AT370561B (US06649357-20031118-C00005.png)
AU (1) AU504667B2 (US06649357-20031118-C00005.png)
BR (1) BR7506996A (US06649357-20031118-C00005.png)
CA (1) CA1046650A (US06649357-20031118-C00005.png)
CH (1) CH608653A5 (US06649357-20031118-C00005.png)
DE (1) DE2547304A1 (US06649357-20031118-C00005.png)
DK (1) DK142758B (US06649357-20031118-C00005.png)
ES (1) ES442102A1 (US06649357-20031118-C00005.png)
FR (1) FR2290040A1 (US06649357-20031118-C00005.png)
GB (1) GB1515179A (US06649357-20031118-C00005.png)
IT (1) IT1044592B (US06649357-20031118-C00005.png)
NL (1) NL183260C (US06649357-20031118-C00005.png)
SE (1) SE411606B (US06649357-20031118-C00005.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0388612A2 (en) * 1989-03-24 1990-09-26 International Business Machines Corporation Semiconductor device with self-aligned contact to buried subcollector

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2632647A1 (de) * 1976-07-20 1978-01-26 Siemens Ag Halbleiterbauelement mit passivierender schutzschicht
IN147578B (US06649357-20031118-C00005.png) * 1977-02-24 1980-04-19 Rca Corp
DE2730367A1 (de) * 1977-07-05 1979-01-18 Siemens Ag Verfahren zum passivieren von halbleiterelementen
US4174252A (en) * 1978-07-26 1979-11-13 Rca Corporation Method of defining contact openings in insulating layers on semiconductor devices without the formation of undesirable pinholes
CA1136773A (en) * 1978-08-14 1982-11-30 Norikazu Ohuchi Semiconductor device
FR2459551A1 (fr) * 1979-06-19 1981-01-09 Thomson Csf Procede et structure de passivation a autoalignement sur l'emplacement d'un masque
GB2071411B (en) * 1980-03-07 1983-12-21 Philips Electronic Associated Passivating p-n junction devices
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NL183260C (nl) 1988-09-01
US4063275A (en) 1977-12-13
ATA818475A (de) 1982-08-15
GB1515179A (en) 1978-06-21
AU8599175A (en) 1977-04-28
SE411606B (sv) 1980-01-14
DE2547304A1 (de) 1976-04-29
NL183260B (nl) 1988-04-05
JPS5149686A (US06649357-20031118-C00005.png) 1976-04-30
DK142758C (US06649357-20031118-C00005.png) 1981-08-10
FR2290040B1 (US06649357-20031118-C00005.png) 1979-08-17
CH608653A5 (US06649357-20031118-C00005.png) 1979-01-15
AU504667B2 (en) 1979-10-25
SE7511927L (sv) 1976-04-27
DK480275A (US06649357-20031118-C00005.png) 1976-04-27
JPS6022497B2 (ja) 1985-06-03
DK142758B (da) 1981-01-12
CA1046650A (en) 1979-01-16
NL7512559A (nl) 1976-04-28
BR7506996A (pt) 1976-08-17
IT1044592B (it) 1980-03-31
DE2547304C2 (US06649357-20031118-C00005.png) 1988-08-11
ES442102A1 (es) 1977-03-16
FR2290040A1 (fr) 1976-05-28

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