AT307505B - Verfahren zum Herstellen epitaktischer Schichten aus elektrisch isolierendem Material unter Verwendung eines aus Halbleitermaterial bestehenden Trägerkörpers - Google Patents
Verfahren zum Herstellen epitaktischer Schichten aus elektrisch isolierendem Material unter Verwendung eines aus Halbleitermaterial bestehenden TrägerkörpersInfo
- Publication number
- AT307505B AT307505B AT919369A AT919369A AT307505B AT 307505 B AT307505 B AT 307505B AT 919369 A AT919369 A AT 919369A AT 919369 A AT919369 A AT 919369A AT 307505 B AT307505 B AT 307505B
- Authority
- AT
- Austria
- Prior art keywords
- electrically insulating
- carrier body
- epitaxial layers
- insulating material
- semiconductor material
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/007—Pulling on a substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/32—Seed holders, e.g. chucks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/967—Semiconductor on specified insulator
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681789064 DE1789064A1 (de) | 1968-09-30 | 1968-09-30 | Verfahren zum Herstellen epitaktischer Schichten aus elektrisch isolierendem Material unter Verwendung eines aus Halbleitermaterial bestehenden Traegerkoerpers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT307505B true AT307505B (de) | 1973-05-25 |
Family
ID=5706786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT919369A AT307505B (de) | 1968-09-30 | 1969-09-29 | Verfahren zum Herstellen epitaktischer Schichten aus elektrisch isolierendem Material unter Verwendung eines aus Halbleitermaterial bestehenden Trägerkörpers |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3649351A (de) |
| JP (1) | JPS4842033B1 (de) |
| AT (1) | AT307505B (de) |
| CH (1) | CH499883A (de) |
| DE (1) | DE1789064A1 (de) |
| FR (1) | FR2019191A1 (de) |
| GB (1) | GB1241356A (de) |
| NL (1) | NL6911719A (de) |
| SE (1) | SE341034B (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU400139A1 (ru) * | 1971-07-07 | 1974-02-25 | Фонд вноертш | |
| US3914525A (en) * | 1974-03-15 | 1975-10-21 | Rockwell International Corp | Mercury sulfide films and method of growth |
| JPS535994B2 (de) * | 1974-09-26 | 1978-03-03 | ||
| JPS57211267A (en) * | 1981-06-22 | 1982-12-25 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JPS58156348U (ja) * | 1982-04-14 | 1983-10-19 | 株式会社三ツ葉電機製作所 | 磁石発電機に接続する点灯充電装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3341361A (en) * | 1963-02-21 | 1967-09-12 | Union Carbide Corp | Process for providing a silicon sheet |
| US3411946A (en) * | 1963-09-05 | 1968-11-19 | Raytheon Co | Process and apparatus for producing an intermetallic compound |
-
1968
- 1968-09-30 DE DE19681789064 patent/DE1789064A1/de active Pending
-
1969
- 1969-07-31 NL NL6911719A patent/NL6911719A/xx unknown
- 1969-09-25 SE SE13232/69A patent/SE341034B/xx unknown
- 1969-09-25 US US860943A patent/US3649351A/en not_active Expired - Lifetime
- 1969-09-26 CH CH1453469A patent/CH499883A/de not_active IP Right Cessation
- 1969-09-29 FR FR6933105A patent/FR2019191A1/fr not_active Withdrawn
- 1969-09-29 GB GB47763/69A patent/GB1241356A/en not_active Expired
- 1969-09-29 AT AT919369A patent/AT307505B/de not_active IP Right Cessation
- 1969-09-29 JP JP44077007A patent/JPS4842033B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| SE341034B (de) | 1971-12-13 |
| FR2019191A1 (de) | 1970-06-26 |
| DE1789064A1 (de) | 1971-12-30 |
| US3649351A (en) | 1972-03-14 |
| NL6911719A (de) | 1970-04-01 |
| JPS4842033B1 (de) | 1973-12-10 |
| GB1241356A (en) | 1971-08-04 |
| CH499883A (de) | 1970-11-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CH376584A (de) | Verfahren zum Herstellen einkristalliner Halbleiterstäbe | |
| CH543596A (de) | Verfahren zum Abscheiden von Schichten aus halbleitendem bzw. isolierendem Material aus einem strömenden Reaktionsgas auf erhitzte Halbleiterkristalle bzw. zum Dotieren solcher Kristalle aus einem strömenden dotierenden Gas | |
| CH495842A (de) | Verfahren zum Herstellen eines Schichtbauteils | |
| CH499628A (de) | Verfahren zum Aufwachsen von dünnen, nichtleitenden Schichten | |
| AT348023B (de) | Verfahren zum herstellen einer halbleiter- anordnung aus silizium | |
| AT307505B (de) | Verfahren zum Herstellen epitaktischer Schichten aus elektrisch isolierendem Material unter Verwendung eines aus Halbleitermaterial bestehenden Trägerkörpers | |
| CH534007A (de) | Verfahren zum Herstellen eines rohrförmigen Körpers aus Halbleitermaterial | |
| AT308828B (de) | Verfahren zum Herstellen epitaktischer Aufwachsschichten aus Halbleitermaterial für elektrische Bauelemente | |
| AT308830B (de) | Verfahren zum Herstellen eines mindestens einseitig offenen Hohlkörpers aus Halbleitermaterial | |
| AT310252B (de) | Verfahren zum Herstellen eines Magnesium-Aluminium-Spinellsubstrates zum epitaktischen Abscheiden von Halbleitermaterialschichten | |
| CH420072A (de) | Verfahren zum Herstellen von einkristallinen Halbleiterstäben | |
| AT317316B (de) | Verfahren zum Herstellen von III - V - Halbleitereinkristallen für elektrolumineszierende Halbleiterbauelemente | |
| CH525027A (de) | Verfahren zum epitaktischen Niederschlagen einer Halbleiterverbindung | |
| CH510937A (de) | Verfahren zum Herstellen einer Isolierschicht auf der Oberfläche eines Halbleiterkristalls | |
| CH457374A (de) | Verfahren zum Abscheiden einer epitaktischen Schicht von kristallinem Material | |
| CH500592A (de) | Verfahren zum Herstellen epitaktischer Halbleiterschichten auf einem Substratkörper | |
| AT261679B (de) | Verfahren zum Herstellen epitaktischer Aufwachsschichten aus halbleitenden Verbindungen | |
| CH484699A (de) | Verfahren zum Herstellen von epitaktischen Aufwachsschichten aus binären halbleitenden Verbindungen | |
| AT323235B (de) | Verfahren zum herstellen epitaktischer schichten halbleitender a<iii>b<v>-verbindungen | |
| CH485326A (de) | Verfahren zum Herstellen elektrisch leitender Schichten für Halbleiterbauelemente | |
| CH508275A (de) | Verfahren zum Herstellen von p-dotierten Zonen mit unterschiedlichen Eindringtiefen in einem Siliciumhalbleiterkörper | |
| CH537985A (de) | Verfahren zum Herstellen eines Hohlkörpers aus Halbleitermaterial | |
| CH452708A (de) | Verfahren zum Herstellen einer aus gegeneinander isolierten Halbleiterbereichen bestehenden Halbleitervorrichtung | |
| CH468720A (de) | Verfahren zum Herstellen von Metallkontaktschichten auf einem aus Halbleitermaterial bestehenden Einkristall | |
| AT259019B (de) | Verfahren zum Herstellen von gleichmäßigen epitaktischen Aufwachsschichten |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ELJ | Ceased due to non-payment of the annual fee |