AT239854B - Verfahren zum Verbinden eines Metalleiters mit einem Halbleiterkörper - Google Patents
Verfahren zum Verbinden eines Metalleiters mit einem HalbleiterkörperInfo
- Publication number
- AT239854B AT239854B AT945762A AT945762A AT239854B AT 239854 B AT239854 B AT 239854B AT 945762 A AT945762 A AT 945762A AT 945762 A AT945762 A AT 945762A AT 239854 B AT239854 B AT 239854B
- Authority
- AT
- Austria
- Prior art keywords
- semiconductor body
- metal conductor
- conductor
- metal
- semiconductor
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85203—Thermocompression bonding
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Die Bonding (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE487257 | 1961-12-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
AT239854B true AT239854B (de) | 1965-04-26 |
Family
ID=3844623
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT945762A AT239854B (de) | 1961-12-04 | 1962-12-03 | Verfahren zum Verbinden eines Metalleiters mit einem Halbleiterkörper |
Country Status (4)
Country | Link |
---|---|
AT (1) | AT239854B (de) |
FR (1) | FR1340092A (de) |
GB (1) | GB1003482A (de) |
NL (1) | NL286149A (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3641524A1 (de) * | 1985-12-10 | 1987-06-11 | Mitsubishi Electric Corp | Verfahren zur herstellung eines halbleiterbauelements |
DE3938152A1 (de) * | 1989-01-13 | 1990-07-26 | Mitsubishi Electric Corp | Verfahren zur herstellung eines halbleiterbauelements |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4551074B2 (ja) * | 2003-10-07 | 2010-09-22 | 信越化学工業株式会社 | 硬化性オルガノポリシロキサン組成物および半導体装置 |
JP4913874B2 (ja) * | 2010-01-18 | 2012-04-11 | 信越化学工業株式会社 | 硬化性オルガノポリシロキサン組成物および半導体装置 |
-
0
- NL NL286149D patent/NL286149A/xx unknown
-
1962
- 1962-11-30 GB GB45389/62A patent/GB1003482A/en not_active Expired
- 1962-12-03 FR FR917359A patent/FR1340092A/fr not_active Expired
- 1962-12-03 AT AT945762A patent/AT239854B/de active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3641524A1 (de) * | 1985-12-10 | 1987-06-11 | Mitsubishi Electric Corp | Verfahren zur herstellung eines halbleiterbauelements |
DE3938152A1 (de) * | 1989-01-13 | 1990-07-26 | Mitsubishi Electric Corp | Verfahren zur herstellung eines halbleiterbauelements |
Also Published As
Publication number | Publication date |
---|---|
NL286149A (de) | 1900-01-01 |
FR1340092A (fr) | 1963-10-11 |
GB1003482A (en) | 1965-09-02 |
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