CH347580A - Verfahren zum Anbringen einer Elektrode auf einem halbleitenden Körper - Google Patents

Verfahren zum Anbringen einer Elektrode auf einem halbleitenden Körper

Info

Publication number
CH347580A
CH347580A CH347580DA CH347580A CH 347580 A CH347580 A CH 347580A CH 347580D A CH347580D A CH 347580DA CH 347580 A CH347580 A CH 347580A
Authority
CH
Switzerland
Prior art keywords
attaching
electrode
semiconducting body
semiconducting
Prior art date
Application number
Other languages
English (en)
Inventor
Anthony Beale Julian Robert
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH347580A publication Critical patent/CH347580A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/10Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • AHUMAN NECESSITIES
    • A47FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47BTABLES; DESKS; OFFICE FURNITURE; CABINETS; DRAWERS; GENERAL DETAILS OF FURNITURE
    • A47B31/00Service or tea tables, trolleys, or wagons
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48475Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48477Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
    • H01L2224/48484Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) being a plurality of pre-balls disposed side-to-side
    • H01L2224/48488Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) being a plurality of pre-balls disposed side-to-side the connecting portion being a ball bond, i.e. ball on pre-ball
    • H01L2224/4849Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) being a plurality of pre-balls disposed side-to-side the connecting portion being a ball bond, i.e. ball on pre-ball outside the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S228/00Metal fusion bonding
    • Y10S228/904Wire bonding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Temperature-Responsive Valves (AREA)
CH347580D 1956-04-25 1957-04-23 Verfahren zum Anbringen einer Elektrode auf einem halbleitenden Körper CH347580A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB12697/56A GB789931A (en) 1956-04-25 1956-04-25 Improvements in devices comprising semi-conductors

Publications (1)

Publication Number Publication Date
CH347580A true CH347580A (de) 1960-07-15

Family

ID=10009446

Family Applications (1)

Application Number Title Priority Date Filing Date
CH347580D CH347580A (de) 1956-04-25 1957-04-23 Verfahren zum Anbringen einer Elektrode auf einem halbleitenden Körper

Country Status (6)

Country Link
US (1) US2878148A (de)
CH (1) CH347580A (de)
DE (1) DE1058158B (de)
FR (1) FR1171850A (de)
GB (1) GB789931A (de)
NL (2) NL106770C (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE560901A (de) * 1956-10-01
US3036937A (en) * 1957-12-26 1962-05-29 Sylvania Electric Prod Method for manufacturing alloyed junction semiconductor devices
DE1059112B (de) * 1958-04-11 1959-06-11 Intermetall Verfahren zur Kontaktierung von mit Aluminium legierten Silizium-Transistoren
US3005897A (en) * 1959-05-07 1961-10-24 Hoffman Electrouics Corp Heater control circuit for alloying apparatus
NL135881C (de) * 1959-08-05
NL121712C (de) * 1959-10-15 1900-01-01

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL100884C (de) * 1953-05-28 1900-01-01
BE533946A (de) * 1953-12-09
BE534311A (de) * 1953-12-23
US2736847A (en) * 1954-05-10 1956-02-28 Hughes Aircraft Co Fused-junction silicon diodes

Also Published As

Publication number Publication date
FR1171850A (fr) 1959-01-30
US2878148A (en) 1959-03-17
NL106770C (de)
NL216667A (de)
GB789931A (en) 1958-01-29
DE1058158B (de) 1959-05-27

Similar Documents

Publication Publication Date Title
CH396223A (de) Werkzeug zum permanenten Befestigen eines Drahtes an einer Fläche
CH398802A (de) Verfahren zum Anbringen eines elektrischen Anschlusses an einer Halbleiteranordnung
CH365802A (de) Verfahren zur grossflächigen Kontaktierung eines Siliziumkörpers
CH347236A (de) Einrichtung zum Aufbringen eines Überzuges auf Drähte
CH384741A (de) Verfahren zum Verschweissen einer Deckplatte mit einem aus im Abstand voneinander angeordneten Streifen zusammengesetzten Bauteil
CH347580A (de) Verfahren zum Anbringen einer Elektrode auf einem halbleitenden Körper
CH374868A (de) Verfahren zum elektrolytischen Ätzen eines Halbleiterkörpers mit p-n-Übergang
CH399607A (de) Verfahren zum Verbinden eines Metallkörpers mit einem keramischen Körper
CH425735A (de) Verfahren zum Umschmelzen eines stabförmigen Körpers
CH359483A (de) Verfahren zum Plattieren der Oberfläche eines Körpers aus halbleitendem Material
CH327296A (de) Verfahren zum elektrolytischen Anbringen einer Eisenschicht auf einem Gegenstand
CH422725A (de) Verfahren zum Auftragen eines Überzuges auf Partikel
CH387804A (de) Verfahren zum Aufschmelzen einer Elektrode auf einen Halbleiterkörper
CH346815A (de) Vorrichtung zum Befestigen eines Gegenstandes auf einer Kartonkarte oder dergleichen mittels eines Klebstreifens
CH393545A (de) Verfahren zum grossflächigen Verbinden einer Elektrode einer Halbleiteranordnung mit einem Kontaktteil
CH411515A (de) Verfahren zum Aufbringen von Phosphatüberzügen auf Metallen
CH372759A (de) Verfahren zum Auflegieren eines Kontaktes auf einen halbleitenden Körper
AT239854B (de) Verfahren zum Verbinden eines Metalleiters mit einem Halbleiterkörper
CH341924A (de) Vorrichtung zum Bearbeiten eines Werkstückes mit Hilfe einer an einer elektrischen Spannung liegenden Elektrode
AT197436B (de) Verfahren zum Anbringen eines Kontaktes auf Silizium
CH408285A (de) Verfahren zum Konservieren eines Impfstoffes
AT199702B (de) Verfahren zum elektrolytischen Ätzen eines einkristallinen Halbleiterkörpers mit p-n-Übergang
DE1247836B (de) Verfahren zum Herstellen von Streichpapier
AT201083B (de) Verfahren zum Anbringen von typographischen oder andern Figuren auf Schildern oder andern Gegenständen
AT199226B (de) Verfahren zur Herstellung eines halbleitenden Elektrodensystems