CH425735A - Verfahren zum Umschmelzen eines stabförmigen Körpers - Google Patents

Verfahren zum Umschmelzen eines stabförmigen Körpers

Info

Publication number
CH425735A
CH425735A CH1154560A CH1154560A CH425735A CH 425735 A CH425735 A CH 425735A CH 1154560 A CH1154560 A CH 1154560A CH 1154560 A CH1154560 A CH 1154560A CH 425735 A CH425735 A CH 425735A
Authority
CH
Switzerland
Prior art keywords
remelting
rod
shaped body
shaped
Prior art date
Application number
CH1154560A
Other languages
English (en)
Inventor
Andreas Scholte Joan Wilhelmus
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH425735A publication Critical patent/CH425735A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/18—After-treatment, e.g. pore-sealing
    • C25D11/24—Chemical after-treatment
    • C25D11/246—Chemical after-treatment for sealing layers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Induction Heating (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Furnace Details (AREA)
CH1154560A 1959-10-19 1960-10-15 Verfahren zum Umschmelzen eines stabförmigen Körpers CH425735A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL244489 1959-10-19

Publications (1)

Publication Number Publication Date
CH425735A true CH425735A (de) 1966-12-15

Family

ID=19751988

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1154560A CH425735A (de) 1959-10-19 1960-10-15 Verfahren zum Umschmelzen eines stabförmigen Körpers

Country Status (5)

Country Link
US (1) US3121619A (de)
CH (1) CH425735A (de)
DE (1) DE1257740B (de)
GB (1) GB954991A (de)
NL (2) NL112520C (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3250842A (en) * 1963-01-15 1966-05-10 Atomic Energy Commission Electron beam zone refining
US3258314A (en) * 1963-04-12 1966-06-28 Westinghouse Electric Corp Method for interior zone melting of a crystalline rod
US3242015A (en) * 1963-09-24 1966-03-22 Monsanto Co Apparatus and method for producing single crystal structures
US3275417A (en) * 1963-10-15 1966-09-27 Texas Instruments Inc Production of dislocation-free silicon single crystals
DE1262978B (de) * 1965-01-05 1968-03-14 Siemens Ag Verfahren zum Herstellen eines Halbleitereinkristalls
DE1275996B (de) * 1965-07-10 1968-08-29 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen
DE2234512C3 (de) * 1972-07-13 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von (Umorientierten Halbleitereinkristallstäben mit zur Stabmitte abtauendem spezifischem Widerstand
US5069742A (en) * 1990-02-05 1991-12-03 Bleil Carl E Method and apparatus for crystal ribbon growth
DE10328859B4 (de) * 2003-06-20 2007-09-27 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Verfahren und Vorrichtung zum Ziehen von Einkristallen durch Zonenziehen
CN109139639B (zh) * 2018-08-24 2020-10-16 上海宇航系统工程研究所 一种快速锁定的轻量化位姿可调连接机构

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT194444B (de) * 1953-02-26 1958-01-10 Siemens Ag Verfahren und Einrichtung zur Behandlung einer längserstreckten Halbleiterkristallanordnung
US2743199A (en) * 1955-03-30 1956-04-24 Westinghouse Electric Corp Process of zone refining an elongated body of metal
US2897329A (en) * 1957-09-23 1959-07-28 Sylvania Electric Prod Zone melting apparatus
US2905798A (en) * 1958-09-15 1959-09-22 Lindberg Eng Co Induction heating apparatus
US3323091A (en) * 1964-11-05 1967-05-30 Honeywell Inc Multicore transformer including integral mounting assembly

Also Published As

Publication number Publication date
NL244489A (de)
DE1257740B (de) 1968-01-04
GB954991A (en) 1964-04-08
US3121619A (en) 1964-02-18
NL112520C (de)

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