AT15050U1 - Beschichtungsquelle mit Strukturierung - Google Patents

Beschichtungsquelle mit Strukturierung Download PDF

Info

Publication number
AT15050U1
AT15050U1 ATGM371/2015U AT3712015U AT15050U1 AT 15050 U1 AT15050 U1 AT 15050U1 AT 3712015 U AT3712015 U AT 3712015U AT 15050 U1 AT15050 U1 AT 15050U1
Authority
AT
Austria
Prior art keywords
coating material
coating
structuring
source
support element
Prior art date
Application number
ATGM371/2015U
Other languages
German (de)
English (en)
Inventor
Peter Polcik
Sabine Wörle
Ronnie Innerwinkler
Original Assignee
Plansee Composite Mat Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plansee Composite Mat Gmbh filed Critical Plansee Composite Mat Gmbh
Priority to ATGM371/2015U priority Critical patent/AT15050U1/de
Priority to TW105134281A priority patent/TWI711710B/zh
Publication of AT15050U1 publication Critical patent/AT15050U1/de
Priority to PCT/EP2016/002059 priority patent/WO2017102069A1/de
Priority to KR1020187017106A priority patent/KR102657632B1/ko
Priority to US16/061,688 priority patent/US20190003036A1/en
Priority to EP16819815.8A priority patent/EP3390684B1/de
Priority to JP2018531419A priority patent/JP7023844B2/ja
Priority to CN201680074480.3A priority patent/CN108391438B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0635—Carbides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/067—Borides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
ATGM371/2015U 2015-12-18 2015-12-18 Beschichtungsquelle mit Strukturierung AT15050U1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
ATGM371/2015U AT15050U1 (de) 2015-12-18 2015-12-18 Beschichtungsquelle mit Strukturierung
TW105134281A TWI711710B (zh) 2015-12-18 2016-10-24 結構化披覆源
PCT/EP2016/002059 WO2017102069A1 (de) 2015-12-18 2016-12-07 Beschichtungsquelle mit strukturierung
KR1020187017106A KR102657632B1 (ko) 2015-12-18 2016-12-07 구조부를 갖는 코팅 소스
US16/061,688 US20190003036A1 (en) 2015-12-18 2016-12-07 Structured coating source
EP16819815.8A EP3390684B1 (de) 2015-12-18 2016-12-07 Beschichtungsquelle mit strukturierung
JP2018531419A JP7023844B2 (ja) 2015-12-18 2016-12-07 構造化物を有する成膜源
CN201680074480.3A CN108391438B (zh) 2015-12-18 2016-12-07 结构化涂层源

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ATGM371/2015U AT15050U1 (de) 2015-12-18 2015-12-18 Beschichtungsquelle mit Strukturierung

Publications (1)

Publication Number Publication Date
AT15050U1 true AT15050U1 (de) 2016-11-15

Family

ID=57227207

Family Applications (1)

Application Number Title Priority Date Filing Date
ATGM371/2015U AT15050U1 (de) 2015-12-18 2015-12-18 Beschichtungsquelle mit Strukturierung

Country Status (8)

Country Link
US (1) US20190003036A1 (https=)
EP (1) EP3390684B1 (https=)
JP (1) JP7023844B2 (https=)
KR (1) KR102657632B1 (https=)
CN (1) CN108391438B (https=)
AT (1) AT15050U1 (https=)
TW (1) TWI711710B (https=)
WO (1) WO2017102069A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020115914B4 (de) 2020-06-17 2024-03-07 Sindlhauser Materials Gmbh Flächiges Sputtertarget
CN113930744B (zh) * 2021-09-29 2023-12-15 西北核技术研究所 一种具有高发射阈值的梯度涂层及其制备方法
KR20250086259A (ko) 2023-12-06 2025-06-13 이유진 책상의 기능이 내재되어 있는 캐리어

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61291964A (ja) * 1985-06-17 1986-12-22 Anelva Corp スパツタ用樹脂タ−ゲツト
JPS62278261A (ja) * 1986-05-26 1987-12-03 Seiko Epson Corp スパツタ用タ−ゲツトの製造方法
JPS63216969A (ja) * 1987-03-05 1988-09-09 Daido Steel Co Ltd 加工方法
EP0483375B1 (en) * 1990-05-15 1996-03-13 Kabushiki Kaisha Toshiba Sputtering target and production thereof
JPH05214518A (ja) * 1992-02-04 1993-08-24 Hitachi Metals Ltd スパッタリングターゲットとバッキングプレートの接合体の矯正方法およびスパッタリングターゲット材
JPH05230642A (ja) * 1992-02-21 1993-09-07 Nissin High Voltage Co Ltd スパッタ・ターゲット
JP3460506B2 (ja) * 1996-11-01 2003-10-27 三菱マテリアル株式会社 高誘電体膜形成用スパッタリングターゲット
DE102004020404B4 (de) * 2004-04-23 2007-06-06 H. C. Starck Gmbh & Co. Kg Trägerplatte für Sputtertargets, Verfahren zu ihrer Herstellung und Einheit aus Trägerplatte und Sputtertarget
EP1851166A2 (en) * 2005-01-12 2007-11-07 New York University System and method for processing nanowires with holographic optical tweezers
JP5928237B2 (ja) * 2012-08-08 2016-06-01 住友金属鉱山株式会社 Ｃｕ−Ｇａ合金スパッタリングターゲット及びその製造方法
CN104711525B (zh) * 2013-12-13 2018-01-26 吉坤日矿日石金属株式会社 溅射靶及其制造方法
KR102111833B1 (ko) * 2014-06-27 2020-05-18 플란제 콤포지트 마테리얼스 게엠베하 스퍼터링 타겟

Also Published As

Publication number Publication date
KR20180094910A (ko) 2018-08-24
EP3390684B1 (de) 2020-03-18
TWI711710B (zh) 2020-12-01
JP7023844B2 (ja) 2022-02-22
JP2019502024A (ja) 2019-01-24
TW201736625A (zh) 2017-10-16
WO2017102069A1 (de) 2017-06-22
EP3390684A1 (de) 2018-10-24
KR102657632B1 (ko) 2024-04-15
CN108391438A (zh) 2018-08-10
US20190003036A1 (en) 2019-01-03
CN108391438B (zh) 2020-04-14

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