JPH0888462A - Method and device for packaging semiconductor device using anisotropic conductive film - Google Patents
Method and device for packaging semiconductor device using anisotropic conductive filmInfo
- Publication number
- JPH0888462A JPH0888462A JP6222312A JP22231294A JPH0888462A JP H0888462 A JPH0888462 A JP H0888462A JP 6222312 A JP6222312 A JP 6222312A JP 22231294 A JP22231294 A JP 22231294A JP H0888462 A JPH0888462 A JP H0888462A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- anisotropic conductive
- conductive film
- mounting
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
- H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
- H01L2224/2744—Lamination of a preform, e.g. foil, sheet or layer by transfer printing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/36—Assembling printed circuits with other printed circuits
- H05K3/361—Assembling flexible printed circuits with other printed circuits
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置（以下、Ｉ
Ｃという）の実装工程に使用する、異方導電性フィルム
（以下、ＡＣＦという）を用いた半導体装置の実装方法
及びそのための装置に関するものである。BACKGROUND OF THE INVENTION The present invention relates to a semiconductor device (hereinafter referred to as I
The present invention relates to a method for mounting a semiconductor device using an anisotropic conductive film (hereinafter referred to as ACF) used in a mounting step of C) and a device therefor.
【０００２】[0002]
【従来の技術】従来、このような分野の技術としては、
例えば、（１）特開平３−２５５４２５号、（２）日立
異方導電フィルム「アニソルム」カタログなどに記載さ
れるものがあった。上記（２）によれば、作業者が手作
業により、接続部に必要量のＡＣＦを切断し、接続箇所
に位置合わせを行い、加熱加圧により転写を実施するよ
うにしていた。2. Description of the Related Art Conventionally, techniques in such a field include:
For example, there are those described in (1) JP-A-3-255425, (2) Hitachi anisotropic conductive film "Anisolm" catalog, and the like. According to the above (2), the operator manually cuts the required amount of ACF at the connection portion, aligns the connection portion, and performs transfer by heating and pressing.
【０００３】また、上記（１）によれば、自動機により
所定量のＡＣＦの供給を実施するようにしている。Further, according to the above (1), a predetermined amount of ACF is supplied by an automatic machine.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記し
た従来のＡＣＦの供給方法を用いた場合、例えば、液晶
ディスプレイパネル等のガラス基板へ、ＩＣの金バンプ
とＡＣＦを用いた実装では、ＩＣサイズより大きめのＡ
ＣＦ供給となり、この部分は接続に寄与せず、無駄であ
り、ＩＣサイズに等しい大きさのＡＣＦ供給は困難であ
る。However, when the conventional ACF supply method described above is used, for example, when mounting the IC using gold bumps and the ACF on a glass substrate such as a liquid crystal display panel, the size of the IC is smaller than the IC size. Large A
This is a CF supply, and this portion does not contribute to the connection and is wasteful, and it is difficult to supply an ACF having a size equal to the IC size.
【０００５】また、ＡＣＦを用いた基板へのＩＣの実装
方法について、図３を用いて詳細に説明する。まず、図
３（ａ）に示すように、基板（例えば、ガラスエポキシ
基板）１上のＩＣ実装部２には、ＩＣとの接続を行うた
めのパッド３が形成されている。そのＩＣ実装部２には
転写によって、図３（ｂ）に示すように、ＡＣＦ４が形
成される。A method of mounting an IC on a substrate using ACF will be described in detail with reference to FIG. First, as shown in FIG. 3A, a pad 3 for connecting to an IC is formed in an IC mounting portion 2 on a substrate (for example, a glass epoxy substrate) 1. An ACF 4 is formed on the IC mounting portion 2 by transfer, as shown in FIG.
【０００６】そこに、図３（ｃ）に示すように、実装さ
れる電極６が形成されたＩＣ５が位置決めされる。そし
て、図３（ｄ）に示すように、基板１上にＡＣＦ４を介
してＩＣ５が実装される。このように、ＩＣ５の実装に
際しては、マージンを見込んで、ＩＣ５のサイズより大
きめのＡＣＦ４が形成されることになり、この部分は接
続に寄与せず、無駄を生じる。As shown in FIG. 3 (c), the IC 5 on which the electrodes 6 to be mounted are formed is positioned there. Then, as shown in FIG. 3D, the IC 5 is mounted on the substrate 1 via the ACF 4. As described above, when the IC 5 is mounted, the ACF 4 larger than the size of the IC 5 is formed in consideration of the margin, and this portion does not contribute to the connection and wastes.
【０００７】本発明は、上記問題点を除去し、簡便な工
程でもって、しかも半導体装置の接続部のみのサイズに
ＡＣＦを形成して、実装スペースの低減を図り得る異方
導電性フィルムを用いた半導体装置の実装方法及びその
ための装置を提供することを目的とする。The present invention eliminates the above-mentioned problems and uses an anisotropic conductive film which can reduce the mounting space by forming the ACF in the size of only the connecting portion of the semiconductor device by a simple process. Another object of the present invention is to provide a semiconductor device mounting method and a device therefor.
【０００８】[0008]
【課題を解決するための手段】本発明は、上記目的を達
成するために、 （１）異方導電性フィルムを用いた半導体装置の実装方
法において、ヒートツール（２０）にて吸着された半導
体装置（１０）をベースフィルム（３０Ａ）と異方導電
性層（３０Ｂ）を有する異方導電性フィルム（３０）上
に位置決めする工程と、前記半導体装置（１０）を下降
させ、この半導体装置（１０）と前記異方導電性フィル
ム（３０）の下部に配置される表面にクッション材（４
０Ａ）を有する転写ステージ（４０）間で前記異方導電
性フィルム（３０）を押圧加熱する工程と、前記ヒート
ツール（２０）を上昇させ、前記異方導電性層（３０
Ｂ）を前記ベースフィルム（３０Ａ）と剥離させて前記
半導体装置（１０）に転写する工程と、前記ヒートツー
ル（２０）を搬送し、前記異方導電性層（３０Ｂ）が転
写された半導体装置（１０）を実装すべき位置に実装す
る工程とを施すようにしたものである。In order to achieve the above object, the present invention provides: (1) In a semiconductor device mounting method using an anisotropic conductive film, a semiconductor adsorbed by a heat tool (20). Positioning the device (10) on the anisotropic conductive film (30) having the base film (30A) and the anisotropic conductive layer (30B), and lowering the semiconductor device (10) to move the semiconductor device (10). 10) and a cushion material (4) on the surface of the anisotropic conductive film (30).
0A) of the anisotropic conductive film (30) between the transfer stage (40) and the heating tool (20) are raised to move the anisotropic conductive layer (30).
A step of peeling B) from the base film (30A) and transferring it to the semiconductor device (10); and a semiconductor device on which the anisotropic conductive layer (30B) is transferred by carrying the heat tool (20). The step of mounting (10) at a position to be mounted is performed.
【０００９】（２）上記（１）記載の異方導電性フィル
ムを用いた半導体装置の実装方法において、前記異方導
電性フィルム（３０）の幅方向に半導体装置（１０−
１，１０−２，…１０−ｎ）に転写が必要な寸法だけ区
分して、この異方導電性層（３０Ｂ）を前記半導体装置
（１０−１，１０−２，…１０−ｎ）に転写させ、幅方
向に許容できる回数だけ異方導電性フィルム（３０）を
使用する。(2) In the method for mounting a semiconductor device using the anisotropic conductive film described in (1) above, the semiconductor device (10-) is formed in the width direction of the anisotropic conductive film (30).
1, 10-2, ... 10-n) are categorized according to the size required for transfer, and the anisotropic conductive layer (30B) is applied to the semiconductor device (10-1, 10-2, ... 10-n). Transfer and use the anisotropic conductive film (30) as many times as is allowed in the width direction.
【００１０】（３）異方導電性フィルムを用いた半導体
装置の実装装置において、送り出しリール（３１）と巻
き取りリール（３２）間に掛けられるベースフィルム
（３０Ａ）と異方導電性層（３０Ｂ）を有する異方導電
性フィルム（３０）と、この異方導電性フィルム（３
０）の下部に配置され、表面にクッション材（４０Ａ）
を有する転写ステージ（４０）と、この転写ステージ
（４０）の近くに配置される半導体装置（１０）を収納
するトレイ（４１）と、前記転写ステージ（４０）の近
くに配置され、半導体装置（１０）が実装される被半導
体装置実装体（１２）がセットされる実装ステージ（４
２）とを配置し、ヒートツール（２０）にて前記トレイ
（４１）に収納されている半導体装置（１０）を吸着し
て、前記異方導電性フィルム（３０）上に搬送した後、
前記ヒートツール（２０）を下降させて転写ステージ
（４０）との協働により、その半導体装置（１０）に前
記異方導電性層（３０Ｂ）をベースフィルム（３０Ａ）
より剥離させて転写し、前記ヒートツール（２０）を搬
送させて、前記実装ステージ（４２）上にセットされた
被半導体装置実装体（１２）に前記半導体装置（１０）
を実装する。(3) In a semiconductor device mounting apparatus using an anisotropic conductive film, a base film (30A) and an anisotropic conductive layer (30B) which are hung between a delivery reel (31) and a take-up reel (32). And an anisotropic conductive film (3), and the anisotropic conductive film (3).
Cushion material (40A) placed on the lower part of 0)
A transfer stage (40), a tray (41) for accommodating the semiconductor device (10) arranged near the transfer stage (40), and a semiconductor device (40) arranged near the transfer stage (40). The mounting stage (4) on which the semiconductor device mounted body (12) on which the semiconductor device 10) is mounted is set.
2) are arranged, the semiconductor device (10) housed in the tray (41) is adsorbed by the heat tool (20), and the semiconductor device (10) is conveyed onto the anisotropic conductive film (30).
By lowering the heat tool (20) and cooperating with the transfer stage (40), the semiconductor device (10) is provided with the anisotropic conductive layer (30B) on the base film (30A).
The semiconductor device (10) is further peeled off and transferred, and the heat tool (20) is conveyed to the semiconductor device mounted body (12) set on the mounting stage (42).
Implement.
【００１１】（４）上記（３）記載の異方導電性フィル
ムを用いた半導体装置の実装装置において、前記クッシ
ョン材（４０Ａ）はシリコンゴムからなるラバーであ
る。(4) In the semiconductor device mounting apparatus using the anisotropic conductive film described in (3) above, the cushion material (40A) is a rubber made of silicon rubber.
【００１２】[0012]
【作用】本発明によれば、上記（１）に示したように、
ヒートツール（２０）にて吸着された半導体装置
（１０）をベースフィルム（３０Ａ）と異方導電性層
（３０Ｂ）を有する異方導電性フィルム（３０）上に位
置決めし、 前記半導体装置（１０）を下降させ、こ
の半導体装置（１０）と前記異方導電性フィルム（３
０）の下部に配置される表面にクッション材（４０Ａ）
を有する転写ステージ（４０）間で前記異方導電性フィ
ルム（３０）を押圧加熱し、 前記ヒートツール（２
０）を上昇させ、前記異方導電性層（３０Ｂ）を前記ベ
ースフィルム（３０Ａ）と剥離させて前記半導体装置
（１０）に転写し、 前記ヒートツール（２０）を搬
送し、前記異方導電性層（３０Ｂ）が転写された半導体
装置（１０）を実装すべき位置に実装するようにしたの
で、簡便な工程でもって、しかも半導体装置の接続部の
みのサイズに異方導電性フィルムを形成することがで
き、実装スペースの低減を図ることができる。According to the present invention, as shown in (1) above,
The semiconductor device (10) adsorbed by the heat tool (20) is positioned on the anisotropic conductive film (30) having the base film (30A) and the anisotropic conductive layer (30B), and the semiconductor device (10) ) Is lowered, and the semiconductor device (10) and the anisotropic conductive film (3
0) Cushion material (40A) on the surface that is placed under
The anisotropic conductive film (30) is pressed and heated between the transfer stages (40) having the heat tool (2).
0) is raised, the anisotropic conductive layer (30B) is peeled from the base film (30A) and transferred to the semiconductor device (10), the heat tool (20) is conveyed, and the anisotropic conductive layer is transferred. Since the semiconductor device (10) to which the conductive layer (30B) has been transferred is mounted at the position where it should be mounted, the anisotropic conductive film is formed by a simple process and in the size of only the connecting portion of the semiconductor device. Therefore, the mounting space can be reduced.
【００１３】また、上記（２）に示したように、異方導
電性フィルム（３０）の幅方向に半導体装置（１０−
１，１０−２，…１０−ｎ）に転写が必要な寸法だけ区
分して異方導電性層（３０Ｂ）を前記半導体装置（１０
−１，１０−２，…１０−ｎ）に転写させ、幅方向に許
容できる回数だけ異方導電性フィルム（３０）を使用す
ることにより、異方導電性層（３０Ｂ）の転写をその幅
が使用可能な限り、ｎ回転写させることができ、異方導
電性フィルム（３０）を無駄なく使用でき、経済的であ
り、ＡＣＦ使用単価を下げることができる。Further, as shown in (2) above, the semiconductor device (10-) is formed in the width direction of the anisotropic conductive film (30).
1, 10-2, ... 10-n), and the anisotropic conductive layer (30B) is divided into the semiconductor device (10
-1, 10-2, ... 10-n), and by using the anisotropic conductive film (30) a number of times that is allowable in the width direction, transfer of the anisotropic conductive layer (30B) can be performed in that width. As long as it can be used, it can be transferred n times, the anisotropic conductive film (30) can be used without waste, it is economical, and the unit cost of ACF can be reduced.
【００１４】更に、上記（３）に示した実装装置によれ
ば、異方導電性フィルムの供給装置、半導体トレイ及び
被半導体実装体がその異方導電性フィルムの供給装置の
近傍に集約的に配置され、ヒートツールに吸着された半
導体装置に異方導電性層を接続に必要な寸法だけ転写
し、経済的でかつ量産性の向上を図ることができる。ま
た、上記（４）に示したように、前記クッション材はシ
リコンゴムからなるラバーとすることにより、耐熱性を
有するとともに、半導体装置エッジ部により、ヒートツ
ールの上昇時に、半導体装置の幅寸法だけ、異方導電性
層の転写を確実に行うことができる。Further, according to the mounting apparatus described in the above (3), the anisotropic conductive film supply device, the semiconductor tray and the semiconductor mounted body are centralized in the vicinity of the anisotropic conductive film supply device. The anisotropic conductive layer is transferred to the semiconductor device arranged and adsorbed by the heat tool by a size necessary for connection, and thus it is possible to improve economical efficiency and mass productivity. Further, as described in (4) above, the cushion material is made of rubber made of silicon rubber so that the cushion material has heat resistance, and the edge portion of the semiconductor device causes only the width dimension of the semiconductor device to rise when the heat tool is raised. Therefore, the transfer of the anisotropic conductive layer can be surely performed.
【００１５】[0015]
【実施例】以下、本発明の実施例を図面を参照しながら
説明する。図１は本発明の実施例を示す半導体装置への
ＡＣＦ転写工程図である。この図１において、１０はＩ
Ｃであり、このＩＣ１０はヒートツール２０により吸着
保持されている。４０はＩＣ１０にＡＣＦの転写を実施
する転写ステージ、４０Ａはこの転写ステージ４０上に
固定され，ヒートツール２０による加圧時にクッション
となるクッション材であり、例えば、シリコンゴムから
なるラバーである。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a process drawing of an ACF transfer to a semiconductor device showing an embodiment of the present invention. In FIG. 1, 10 is I
C, and the IC 10 is adsorbed and held by the heat tool 20. Reference numeral 40 is a transfer stage for transferring the ACF to the IC 10, and 40A is a cushion material fixed on the transfer stage 40 and serving as a cushion when pressed by the heat tool 20, for example, a rubber made of silicone rubber.
【００１６】ＩＣ１０と、転写ステージ４０上のクッシ
ョン材４０Ａの間にＡＣＦ３０が配置される。以下、図
１を用いて、半導体装置へのＡＣＦ転写工程を説明す
る。 （１）まず、図１（ａ−１）に示すように、ヒートツー
ル２０にて吸着されたＩＣ１０を下降させ、転写ステー
ジ４０上のＡＣＦ３０に位置決めする。ここで、ＡＣＦ
３０は、図１（ａ−２）〔図１（ａ−１）のＡ部拡大
図〕に示すように、ベースフィルム３０Ａ上に異方導電
性層（以下、ＡＣ層という）３０Ｂが形成されている。An ACF 30 is arranged between the IC 10 and the cushion material 40A on the transfer stage 40. Hereinafter, the ACF transfer process to the semiconductor device will be described with reference to FIG. (1) First, as shown in FIG. 1A-1, the IC 10 adsorbed by the heat tool 20 is lowered and positioned on the ACF 30 on the transfer stage 40. Where ACF
As shown in FIG. 1 (a-2) [enlarged view of part A in FIG. 1 (a-1)], an anisotropic conductive layer (hereinafter referred to as AC layer) 30B is formed on the base film 30A. ing.
【００１７】（２）次に、ヒートツール２０にて吸着さ
れたＩＣ１０を更に下降させると、ＩＣ１０はＡＣＦ３
０に接触する。更に、ＩＣ１０を下降させると、図１
（ｂ−１）に示すように、ＩＣ１０はＡＣＦ３０に沈み
込み、転写ステージ４０上のクッション材４０Ａが変形
する。その状態は、図１（ｂ−２）に拡大して示すよう
に、ＩＣエッジ部１１のＡＣＦ３０は、ＩＣ１０が沈み
込むことにより、ＡＣＦ３０のＡＣ層３０Ｂがベースフ
ィルム３０Ａより柔らかいため、厚さが薄くなる。この
効果は、ヒートツール２０でＩＣ１０を加熱することに
より、より顕著に現れる。(2) Next, when the IC 10 adsorbed by the heat tool 20 is further lowered, the IC 10 becomes ACF3.
Touch 0. When the IC 10 is further lowered, as shown in FIG.
As shown in (b-1), the IC 10 sinks into the ACF 30, and the cushion material 40A on the transfer stage 40 is deformed. As shown in an enlarged view in FIG. 1B-2, the state is that the ACF 30 of the IC edge portion 11 has a thickness because the AC layer 30B of the ACF 30 is softer than the base film 30A when the IC 10 sinks. Become thin. This effect is more prominent when the IC 10 is heated by the heat tool 20.
【００１８】（３）次いで、所定時間加熱した後、ヒー
トツール２０を上昇させると、図１（ｃ）に示すよう
に、ＡＣ層３０ＢはＩＣエッジ部１１からベースフィル
ム３０Ａと剥離し、ＩＣ１０にＡＣ層３０Ｂが転写され
る。このように、ＡＣ層３０Ｂの転写を、被転写物（こ
こでは、ＩＣ１０）から、加熱加圧したことにより、Ａ
Ｃ層３０Ｂの転写を必要面積だけ実施することが可能と
なる。(3) Next, after heating for a predetermined time, when the heat tool 20 is raised, the AC layer 30B is separated from the base film 30A from the IC edge portion 11 as shown in FIG. The AC layer 30B is transferred. As described above, the transfer of the AC layer 30B is performed by heating and pressurizing the transfer target (here, the IC 10).
The transfer of the C layer 30B can be performed in a required area.
【００１９】更に、転写ステージ４０上にクッション材
４０Ａ（ラバー）を配置したことにより、上記作用効果
を確実にすることができる。図２は本発明の実施例を示
す異方導電性フィルムを用いた半導体装置の実装装置の
全体斜視図である。図２に示すように、この半導体装置
の実装装置は、異方導電性フィルムの供給装置として
は、ＡＣＦ３０の繰り出しリール３１、ＡＣ層３０Ｂが
転写された後のＡＣＦ３０の巻き取りリール３２を有
し、これらは、固定部４３に回転可能に配置されてい
る。そこで、繰り出しリール３１よりＡＣＦ３０が繰り
出され、巻き取りリール３２でＡＣ層３０Ｂが転写され
た後のＡＣＦ３０を回収する。そして、これらのリール
３１と３２間に掛けられるＡＣＦ３０の下部には転写ス
テージ４０が配置されている。Further, by disposing the cushion material 40A (rubber) on the transfer stage 40, it is possible to ensure the above-mentioned effects. FIG. 2 is an overall perspective view of a semiconductor device mounting apparatus using an anisotropic conductive film showing an embodiment of the present invention. As shown in FIG. 2, this semiconductor device mounting apparatus has, as an anisotropic conductive film supply apparatus, a delivery reel 31 of the ACF 30 and a take-up reel 32 of the ACF 30 after the AC layer 30B is transferred. , And these are rotatably arranged on the fixed portion 43. Then, the ACF 30 is fed from the feeding reel 31 and the ACF 30 after the AC layer 30B is transferred by the take-up reel 32 is collected. A transfer stage 40 is arranged below the ACF 30 that is hung between the reels 31 and 32.
【００２０】この異方導電性フィルムの供給装置の近く
には、トレイステージ４１が配置され、このトレイステ
ージ４１には基板へ実装されるＩＣ１０が収納されてい
る。また、トレイステージ４１及び転写ステージ４０の
近くに実装ステージ４２が配置されている。以下、この
異方導電性フィルムを用いた半導体装置の実装装置の動
作を説明する。A tray stage 41 is arranged near the anisotropic conductive film supply device, and the IC 10 to be mounted on a substrate is housed in the tray stage 41. A mounting stage 42 is arranged near the tray stage 41 and the transfer stage 40. The operation of the semiconductor device mounting apparatus using this anisotropic conductive film will be described below.
【００２１】まず、ヒートツール２０がトレイステージ
４１の第１番目のＩＣ１０−１を吸着する。次に、ＩＣ
１０−１を転写ステージ４０に移動させ、ヒートツール
２０を下降させ、所定の時間加熱加圧する。その後、ヒ
ートツール２０を上昇させ、ＡＣ層３０Ｂの転写が完了
する。次に、ヒートツール２０は実装ステージ４２上の
基板１２の実装位置に移動し、位置決めした後、ヒート
ツール２０を下降させ、所定時間加熱加圧し、ＡＣ層３
０Ｂの硬化が完了し、基板１２の所定の位置にＩＣ１０
−１を実装する。First, the heat tool 20 adsorbs the first IC 10-1 on the tray stage 41. Next, IC
10-1 is moved to the transfer stage 40, the heat tool 20 is lowered, and heating and pressing are performed for a predetermined time. Then, the heat tool 20 is raised to complete the transfer of the AC layer 30B. Next, the heat tool 20 is moved to the mounting position of the substrate 12 on the mounting stage 42, and after positioning, the heat tool 20 is lowered, heated and pressed for a predetermined time, and the AC layer 3
After the curing of 0B is completed, the IC 10 is placed at a predetermined position on the substrate 12.
Implement -1.
【００２２】以降、この工程をｎ回実施し、その後、巻
き取りリール３２が転写終了したＡＣＦ３０を回収し、
新たな転写工程が開始する。なお、本実施例では装置の
基本的な構成について記載したが、実装の精度向上のた
めの機構や、量産のための機構を付加した装置を本発明
から排除するものではない。Thereafter, this step is carried out n times, and thereafter, the ACF 30 on which the winding reel 32 has finished transferring is collected,
A new transfer process starts. Although the basic configuration of the device has been described in the present embodiment, a device to which a mechanism for improving mounting accuracy and a device for mass production are added is not excluded from the present invention.
【００２３】図４は本発明の他の実施例を示す半導体装
置へのＡＣＦ転写態様の説明図、図５はそれによって実
装された半導体装置の実装基板の部分斜視図である。図
４において、１０−１はトレイステージより取り出され
た第１番目のＩＣであり、以降１０−２は第２番目のＩ
Ｃ、１０−ｎは第ｎ番目のＩＣである。一方、３０−１
は、ＡＣＦ３０の内の第１番目のＩＣ１０−１に転写さ
れたＡＣ層痕、同様に３０−２は第２番目のＡＣ層痕、
３０−ｎは第ｎ番目のＡＣ層痕である。FIG. 4 is an explanatory view of an ACF transfer mode to a semiconductor device showing another embodiment of the present invention, and FIG. 5 is a partial perspective view of a mounting substrate of the semiconductor device mounted by the ACF transfer mode. In FIG. 4, 10-1 is the first IC taken out from the tray stage, and thereafter 10-2 is the second IC.
C and 10-n are the nth ICs. On the other hand, 30-1
Is the AC layer trace transferred to the first IC 10-1 in the ACF 30, and similarly 30-2 is the second AC layer trace,
30-n is the nth AC layer mark.
【００２４】以下、その動作について説明する。第１実
施例の要領にて、第１番目のＩＣ１０−１に、ＡＣ層３
０−ａの転写が終了し、ベースフィルム３０Ａ上にＡＣ
層痕３０−１が残る。そして、そのＩＣ１０−１は実装
基板５０の実装位置５１にＡＣ層３０−ａを介して実装
される。この後、ヒートツール２０にて、第２番目のＩ
Ｃ１０−２が搬送され、転写ステージ４０上で、第１番
目のＩＣ１０−１に転写されたＡＣ層痕３０−１分ずら
した位置にヒートツール２０が位置決めされる。The operation will be described below. According to the procedure of the first embodiment, the AC layer 3 is added to the first IC 10-1.
0-a transfer is completed, and AC is applied on the base film 30A.
The layer mark 30-1 remains. Then, the IC 10-1 is mounted on the mounting position 51 of the mounting substrate 50 via the AC layer 30-a. After that, with the heat tool 20, the second I
C10-2 is conveyed, and the heat tool 20 is positioned on the transfer stage 40 at a position displaced by the AC layer mark 30-1 transferred to the first IC 10-1.
【００２５】次いで、第１実施例の要領にて、第２番目
のＩＣ１０−２にＡＣ層３０−ｂの転写が実施され、ベ
ースフィルム３０ＡにはＡＣ層痕３０−２が残る。そし
て、そのＩＣ１０−２は実装基板５０の実装位置５２に
ＡＣ層３０−ｂを介して実装される。第ｎ番目のＩＣ１
０−ｎにＡＣ層３０−ｎの転写が実施され、ベースフィ
ルム３０ＡにはＡＣ層痕３０−ｎが残る。そして、その
ＩＣ１０−ｎは、実装基板５０の実装位置５９にＡＣ層
３０−ｎを介して実装される。Then, the AC layer 30-b is transferred to the second IC 10-2 in the same manner as in the first embodiment, and the AC layer mark 30-2 remains on the base film 30A. Then, the IC 10-2 is mounted on the mounting position 52 of the mounting substrate 50 via the AC layer 30-b. Nth IC1
The AC layer 30-n is transferred to 0-n, and the AC layer mark 30-n remains on the base film 30A. Then, the IC 10-n is mounted on the mounting position 59 of the mounting substrate 50 via the AC layer 30-n.
【００２６】このようにして、ＡＣＦ３０の幅ｗ以内ま
でｎ回実施される。その後、ＡＣＦ３０を、巻き取りリ
ール３２で所定量巻き取り、移動させ、同様の工程を実
施する。このように構成したので、他の実施例によれ
ば、ＡＣ層の転写をＡＣＦ幅が使用可能な限り、ｎ回転
写させることができるようにしたので、ＡＣＦを無駄な
く使用でき、経済的であり、ＡＣＦ使用単価を下げるこ
とが可能である。In this way, the process is performed n times within the width w of the ACF 30. After that, the ACF 30 is wound on the winding reel 32 by a predetermined amount and moved, and the same process is performed. With such a configuration, according to another embodiment, the transfer of the AC layer can be performed n times as long as the ACF width can be used, so that the ACF can be used without waste and is economical. Yes, it is possible to reduce the unit cost of ACF usage.
【００２７】このように、本発明の異方導電性フィルム
を用いた半導体装置の実装装置によれば、量産性の向上
を図ることもできる。なお、本発明は上記実施例に限定
されるものではなく、本発明の趣旨に基づいて種々の変
形が可能であり、これらを本発明の範囲から排除するも
のではない。As described above, according to the semiconductor device mounting apparatus using the anisotropic conductive film of the present invention, mass productivity can be improved. The present invention is not limited to the above-mentioned embodiments, and various modifications can be made based on the spirit of the present invention, and these modifications are not excluded from the scope of the present invention.
【００２８】[0028]
【発明の効果】以上、詳細に説明したように、本発明に
よれば、以下のような効果を奏することができる。 （１）請求項（１）記載の発明によれば、簡便な工程で
もって、しかも半導体装置の接続部のみのサイズに異方
導電性層を形成することができ、実装スペースの低減を
図ることができる。As described in detail above, according to the present invention, the following effects can be achieved. (1) According to the invention described in claim (1), the anisotropic conductive layer can be formed in a size that is only the connecting portion of the semiconductor device by a simple process, and the mounting space can be reduced. You can
【００２９】（２）請求項（２）記載の発明によれば、
上記（１）の効果に加え、異方導電性層の転写をその幅
が使用可能な限り、ｎ回転写させることができ、異方導
電性フィルムを無駄なく使用でき、経済的であり、異方
導電性フィルム使用単価を下げることができる。 （３）請求項（３）記載の発明によれば、異方導電性フ
ィルムの供給装置、半導体トレイ及び被半導体実装体が
その異方導電性フィルムの供給装置の近傍に集約的に配
置され、ヒートツールに吸着された半導体装置に異方導
電性フィルム層を接続に必要な寸法だけ転写し、経済的
でかつ量産性の向上を図ることができる。(2) According to the invention described in claim (2),
In addition to the effect of (1) above, as long as the width of the anisotropic conductive layer can be used, it can be transferred n times, the anisotropic conductive film can be used without waste, and it is economical. It is possible to reduce the unit price of the conductive film used. (3) According to the invention described in claim (3), the anisotropic conductive film supply device, the semiconductor tray, and the semiconductor mounted body are collectively arranged in the vicinity of the anisotropic conductive film supply device. The anisotropic conductive film layer is transferred to the semiconductor device adsorbed on the heat tool by a size necessary for connection, and thus it is possible to improve economical efficiency and mass productivity.
【００３０】（４）請求項（４）記載の発明によれば、
上記（３）の効果に加え、前記クッション材はシリコン
ゴムからなるラバーとすることにより、耐熱性を有する
とともに、半導体装置エッジ部により、ヒートツールの
上昇時に、半導体装置の幅寸法だけ、異方導電性層の転
写を確実に行うことができる。(4) According to the invention described in claim (4),
In addition to the effect of (3) above, the cushion material is made of rubber made of silicon rubber so that the cushion material has heat resistance, and the edge portion of the semiconductor device causes anisotropy in the width dimension of the semiconductor device when the heat tool is raised. It is possible to reliably transfer the conductive layer.
【図１】本発明の実施例を示す半導体装置へのＡＣＦ転
写工程図である。FIG. 1 is a process drawing of an ACF transfer to a semiconductor device showing an embodiment of the present invention.
【図２】本発明の実施例を示す異方導電性フィルムを用
いた半導体装置の実装装置の全体斜視図である。FIG. 2 is an overall perspective view of a semiconductor device mounting apparatus using an anisotropic conductive film showing an embodiment of the present invention.
【図３】従来のＡＣＦを用いた基板へのＩＣの実装工程
断面図である。FIG. 3 is a sectional view of a process of mounting an IC on a substrate using a conventional ACF.
【図４】本発明の他の実施例を示す半導体装置へのＡＣ
Ｆ転写態様の説明図である。FIG. 4 is an AC for a semiconductor device showing another embodiment of the present invention.
It is explanatory drawing of the F transfer mode.
【図５】本発明の他の実施例を示す半導体装置の実装基
板の部分斜視図である。FIG. 5 is a partial perspective view of a mounting substrate of a semiconductor device showing another embodiment of the present invention.
１０，１０−１，１０−２，…，１０−ｎ ＩＣ（半
導体装置） １１ ＩＣエッジ部 １２ 基板 ２０ ヒートツール ３０ ＡＣＦ（異方導電性フィルム） ３０Ａ ベースフィルム ３０Ｂ ＡＣ層（異方導電性層） ３０−１，３０−２，…，３０−ｎ ＡＣ層痕 ３１ 繰り出しリール ３２ 巻き取りリール ４０ 転写ステージ ４０Ａ クッション材 ４１ トレイステージ ４２ 実装ステージ ４３ 固定部10, 10-1, 10-2, ..., 10-n IC (semiconductor device) 11 IC edge part 12 substrate 20 heat tool 30 ACF (anisotropic conductive film) 30A base film 30B AC layer (anisotropic conductive layer) ) 30-1, 30-2, ..., 30-n AC layer mark 31 Delivery reel 32 Take-up reel 40 Transfer stage 40A Cushion material 41 Tray stage 42 Mounting stage 43 Fixed part
───────────────────────────────────────────────────── フロントページの続き (72)発明者 北山 憂子 東京都港区虎ノ門１丁目７番12号 沖電気 工業株式会社内 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Yuko Kitayama 1-7-12 Toranomon, Minato-ku, Tokyo Oki Electric Industry Co., Ltd.
Claims (4)
装置をベースフィルムと異方導電性層を有する異方導電
性フィルム上に位置決めする工程と、（ｂ）前記半導体
装置を下降させ該半導体装置と前記異方導電性フィルム
の下部に配置される表面にクッション材を有する転写ス
テージ間で前記異方導電性フィルムを押圧加熱する工程
と、（ｃ）前記ヒートツールを上昇させ異方導電性層を
前記ベースフィルムと剥離させて前記半導体装置に転写
する工程と、（ｄ）前記ヒートツールを搬送し前記異方
導電性層が転写された半導体装置を実装すべき位置に実
装する工程とを施すことを特徴とする異方導電性フィル
ムを用いた半導体装置の実装方法。1. A step of (a) positioning a semiconductor device adsorbed by a heat tool on an anisotropic conductive film having a base film and an anisotropic conductive layer, and (b) lowering the semiconductor device. A step of pressing and heating the anisotropic conductive film between a semiconductor device and a transfer stage having a cushioning material on a surface arranged below the anisotropic conductive film; and (c) raising the heat tool to raise the anisotropic conductivity. Peeling the conductive layer from the base film and transferring it to the semiconductor device, and (d) carrying the heat tool and mounting the semiconductor device to which the anisotropic conductive layer has been transferred at a position to be mounted. A method for mounting a semiconductor device using an anisotropic conductive film, which comprises:
いた半導体装置の実装方法において、前記異方導電性フ
ィルムの幅方向に半導体装置に転写が必要な寸法だけ区
分して前記異方導電性層を前記半導体装置に転写させ幅
方向に許容できる回数だけ異方導電性フィルムを使用す
る異方導電性フィルムを用いた半導体装置の実装方法。2. The method of mounting a semiconductor device using an anisotropic conductive film according to claim 1, wherein the anisotropic conductive film is divided in the width direction of the anisotropic conductive film by a size required for transfer to the semiconductor device. A method for mounting a semiconductor device using an anisotropic conductive film, wherein the conductive layer is transferred to the semiconductor device and the anisotropic conductive film is used as many times as the width allows.
に掛けられるベースフィルムと異方導電性層を有する異
方導電性フィルムと、（ｂ）該異方導電性フィルムの下
部に配置され、表面にクッション材を有する転写ステー
ジと、（ｃ）該転写ステージの近くに配置され、半導体
装置を収納する半導体装置トレイと、（ｄ）前記転写ス
テージの近くに配置され、半導体装置が実装される被半
導体装置実装体がセットされる実装ステージとを配置
し、（ｅ）ヒートツールにて前記半導体装置トレイに収
納されている半導体装置を吸着して、前記異方導電性フ
ィルム上に搬送した後、前記ヒートツールを下降させて
転写ステージとの協働により該半導体装置に異方導電性
層をベースフィルムより剥離させて転写し、前記ヒート
ツールを搬送させて、前記実装ステージにセットされた
被半導体装置実装体に前記半導体装置を実装することを
特徴とする異方導電性フィルムを用いた半導体装置の実
装装置。3. An anisotropic conductive film having (a) a base film and an anisotropic conductive layer, which is hung between a delivery reel and a take-up reel, and (b) is arranged below the anisotropic conductive film, A transfer stage having a cushion material on its surface, (c) a semiconductor device tray which is arranged near the transfer stage and accommodates a semiconductor device, and (d) which is arranged near the transfer stage to mount the semiconductor device. After disposing the mounting stage on which the semiconductor device mounting body is set, (e) adsorbing the semiconductor device housed in the semiconductor device tray with a heat tool and transporting the semiconductor device onto the anisotropic conductive film. , The heat tool is lowered, the anisotropic conductive layer is peeled from the base film and transferred to the semiconductor device in cooperation with the transfer stage, and the heat tool is conveyed. Apparatus for mounting a semiconductor device using an anisotropic conductive film, characterized by mounting the semiconductor device to be a semiconductor device mounting body is set on the mounting stage.
いた半導体装置の実装装置において、前記クッション材
はシリコンゴムからなるラバーである半導体装置の実装
装置。4. The mounting device for a semiconductor device using the anisotropic conductive film according to claim 3, wherein the cushion material is a rubber made of silicon rubber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6222312A JP2925946B2 (en) | 1994-09-19 | 1994-09-19 | Method for mounting semiconductor device using anisotropic conductive film and apparatus therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6222312A JP2925946B2 (en) | 1994-09-19 | 1994-09-19 | Method for mounting semiconductor device using anisotropic conductive film and apparatus therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0888462A true JPH0888462A (en) | 1996-04-02 |
| JP2925946B2 JP2925946B2 (en) | 1999-07-28 |
Family
ID=16780393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6222312A Expired - Fee Related JP2925946B2 (en) | 1994-09-19 | 1994-09-19 | Method for mounting semiconductor device using anisotropic conductive film and apparatus therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2925946B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10310743A (en) * | 1997-05-12 | 1998-11-24 | Hitachi Chem Co Ltd | Application of anisotropic electroconductive adhesive tape and apparatus therefor |
| US6981317B1 (en) | 1996-12-27 | 2006-01-03 | Matsushita Electric Industrial Co., Ltd. | Method and device for mounting electronic component on circuit board |
| WO2007091635A1 (en) * | 2006-02-10 | 2007-08-16 | Sony Chemical & Information Device Corporation | Contact-bonding device |
| JP2008243867A (en) * | 2007-03-26 | 2008-10-09 | Casio Comput Co Ltd | Method of mounting electronic part |
-
1994
- 1994-09-19 JP JP6222312A patent/JP2925946B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6981317B1 (en) | 1996-12-27 | 2006-01-03 | Matsushita Electric Industrial Co., Ltd. | Method and device for mounting electronic component on circuit board |
| JPH10310743A (en) * | 1997-05-12 | 1998-11-24 | Hitachi Chem Co Ltd | Application of anisotropic electroconductive adhesive tape and apparatus therefor |
| WO2007091635A1 (en) * | 2006-02-10 | 2007-08-16 | Sony Chemical & Information Device Corporation | Contact-bonding device |
| JP2007214434A (en) * | 2006-02-10 | 2007-08-23 | Sony Chemical & Information Device Corp | Pressure bonding device |
| US8241455B2 (en) | 2006-02-10 | 2012-08-14 | Sony Chemical & Information Device Corporation | Method for packing electric components on a substrate |
| KR101235532B1 (en) * | 2006-02-10 | 2013-02-21 | 데쿠세리아루즈 가부시키가이샤 | Contact-bonding device |
| JP2008243867A (en) * | 2007-03-26 | 2008-10-09 | Casio Comput Co Ltd | Method of mounting electronic part |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2925946B2 (en) | 1999-07-28 |
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