JP2005252173A - Method for manufacturing semiconductor device and device usable for it - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for efficiently manufacturing a semiconductor element, based on a thin-plate type semiconductor wafer accompanying plating process, by averting breakage of the thin-plate type wafer at plating processing. <P>SOLUTION: The method for manufacturing the semiconductor device comprises the steps of preparing the semiconductor wafer 1, an adhesive tape 6 for holding the wafer, and a frame 7 for dicing; integrally holding the wafer and the frame through the tape by attaching one surface of the wafer to a sticking part 6b of the tape and attaching the frame to its outside; forming a plating layer 12 on the surface of the wafer by processing with a plurality of liquid formulations required for the plating process, with the wafer being held on the frame; and dicing the wafer into a plurality of chips 14, having a predetermined circuit pattern. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a plated semiconductor element, and more particularly to a plating process in a semiconductor element manufacturing process.

With the increase in density and performance of semiconductor elements (devices), the size and thickness of semiconductor wafers serving as the base have been increasing. However, as the semiconductor wafer becomes larger and / or thinner, the mechanical strength of the wafer decreases. Therefore, when using such a large and / or thin semiconductor wafer, it is necessary to handle it more carefully than before. In addition, in the semiconductor element manufacturing process, it is necessary to devise measures for preventing breakage of such large and / or thin wafers.
In particular, various elements (devices) based on a semiconductor wafer, for example, a semiconductor element substrate in which predetermined circuit patterns are arranged in a grid pattern on a thin semiconductor wafer (that is, an element such as an IC chip before dicing). When plating the surface of the wafers constituting the assembly, it is necessary to pay attention to the prevention of wafer breakage. That is, in order to plate the surface of the semiconductor element substrate (for example, electroless nickel plating for the purpose of imparting solderability, etc.), it is necessary to continuously perform a number of different processes. The wafer is easily damaged. Therefore, when using a large and / or thin semiconductor wafer (hereinafter abbreviated as “thin plate wafer”), special attention must be paid to the handling of the wafer during the plating process.
In this regard, Patent Document 1 discloses that a dummy substrate (reinforcing plate) is bonded to a semiconductor element substrate with a thermally foamable adhesive sheet as a countermeasure for preventing damage to the thin plate wafer in the semiconductor element manufacturing process. A method is described in which plating is performed in an integrated state with the substrate. Further, in Patent Document 2, a protective member (reinforcing material) is attached to a semiconductor wafer to form a metal film (for example, plating treatment), and then an adhesive tape with a reinforcing frame is attached to the metal film side. Describes a method of manufacturing a semiconductor device that peels off the substrate. Further, Patent Document 3 describes a plating method in which plating is performed by sandwiching a wafer between a surface covering material provided with a plating opening and a back surface covering material. Thereafter, the thin plate type wafer subjected to the plating process is diced and divided into several chips (typically, each chip constitutes a semiconductor element).

JP 2002-151442 A JP 2003-297786 A JP-A-8-311689

However, in the method described in Patent Document 1 or 3, it is necessary to peel off the dummy substrate and the covering material from the thin wafer (element) after the plating process. At the time of such peeling, since a wafer is not damaged when a thinner wafer is used, a very delicate operation is required. Further, in the method described in Patent Document 2, the protective member is peeled off after being reinforced with the adhesive tape with the reinforcing frame. However, there is a possibility that the thin plate wafer may be damaged at the time of peeling. It is not a measure to prevent damage.
Accordingly, the present invention has been developed in order to fundamentally solve such a conventional problem, and an object of the present invention is a method of manufacturing a semiconductor device based on a thin plate type semiconductor wafer accompanied by a plating process. It is an object of the present invention to provide a manufacturing method capable of avoiding breakage of a thin plate type wafer during processing. Moreover, it is providing the semiconductor element manufactured by such a manufacturing method.

According to the present invention, there is provided a method of manufacturing a semiconductor device having a plated layer, wherein a plurality of circuit patterns (including electrode layers; the same applies hereinafter) of the semiconductor device are arranged on at least one surface. A step of preparing a semiconductor wafer to be plated on the surface side, a wafer holding adhesive tape having an adhesive portion formed on at least one surface, and a dicing frame; and one of the wafers on the adhesive portion of the tape And a step of attaching the frame to the outside and holding the wafer and the frame together via the tape, and a plating process with the wafer held on the frame. A step of forming a plating layer on the surface of the wafer by processing with a plurality of liquid agents, and a plurality of the wafer having a predetermined circuit pattern A production method including a step of dicing into chips is provided.
Here, the “semiconductor element” is a generic term for electronic devices (elements) manufactured based on a semiconductor wafer such as a silicon wafer, and is not limited to a specific application / shape. A semiconductor device such as an IC chip or a power device cut out from a wafer is a typical example included in the semiconductor element here. The “dicing frame” means a frame used for holding the wafer in the dicing process. Therefore, the wafer can be diced as it is while being held in the dicing frame. Furthermore, the “wafer holding pressure-sensitive adhesive tape” is a general term for pressure-sensitive adhesive materials that can be used for holding a wafer on a dicing frame, and is not limited to a specific composition and size.

Unlike the conventional method of plating the surface of a semiconductor wafer (typically a wafer constituting an element assembly) on which a large number of predetermined circuit patterns are arranged (formed), the manufacturing method having such a configuration is first an adhesive tape. The wafer is held integrally with the dicing frame via In the conventional semiconductor element manufacturing process, this step is usually performed after the plating process and before dicing for holding the wafer during the dicing step.
On the other hand, the method of the present invention is characterized in that such assembly is performed before the plating process. Thereafter, a plating process is performed on the wafer held in the dicing frame. As a result, a thin plate type wafer having low mechanical strength can be reinforced by a dicing frame, so that the wafer during a plating process requiring a complicated operation (typically an electroless plating process that requires a lot of liquid processing) is required. A semiconductor element having a plated layer can be manufactured with high production efficiency by avoiding breakage and suppressing generation of defective products due to the breakage.
In addition, according to the present invention, since the dicing frame and the adhesive tape are used as the wafer reinforcing means, it is possible to increase a complicated process of bonding and peeling the conventional dummy substrate and the protective member before dicing. In addition, the dicing can be performed without removing the dicing frame after the plating process is finished (typically, each of the chips is divided into several chips constituting the semiconductor element). Therefore, workability and manufacturing efficiency are good. In the method disclosed here, there is no need to peel off the dummy substrate and the protective member bonded for reinforcement as in the conventional case, and there is no possibility of damage due to peeling.
As another aspect, the present invention provides a semiconductor device manufactured by any of the methods disclosed herein. In the method disclosed herein, the wafer is prevented from being damaged, and a highly reliable semiconductor device can be efficiently manufactured.

A preferred embodiment of the method disclosed herein is a part of the adhesive part of the tape, which is exposed without contacting either the frame or the wafer, before the plating layer forming step. Is a method including a step of performing a non-reacting treatment that does not substantially react with the liquid agent.
Here, the “non-reacting process” may be a process that prevents the adhesive part of the tape from reacting with the liquid agent required for the plating process, and whether it is a physical means or a chemical means. It doesn't matter.
In the tape, when the adhesive part is exposed without contacting any of the frame and the wafer, it contacts with each liquid agent during plating process (typically electroless plating process requiring many liquid agent processes). By doing so, the adhesive component may be dissolved. The method of this aspect is characterized in that the exposed adhesive part is not substantially reacted with the liquid agent required for the plating process by the non-reacting process. By this, it can suppress that an adhesive material component melt | dissolves in a liquid agent, can prevent the quality change of this liquid agent, and can avoid the malfunction which acts on the plating layer by this quality change.

One preferable aspect of the non-reacting process includes affixing a sealing material from the outer peripheral portion of the surface of the held wafer to the frame to cover the exposed adhesive portion.
When the adhesive portion is exposed between the wafer placement portion and the frame placement portion of the wafer holding pressure-sensitive adhesive tape, the exposed adhesive portion is covered with the sealing material according to the method of this aspect. Contact with the liquid agent can be effectively prevented.
In this non-reacting process, typically, the plating process is affected by attaching a sealing material to a part where a circuit pattern is not formed at the edge of the wafer (that is, a part not constituting a semiconductor element). Never give. In addition, since this portion is not subjected to the plating process, it is possible to prevent the unnecessary portion from being subjected to the plating process, and to save chemicals and the like required for the plating process.

In addition, another preferable embodiment of the non-reacting process includes a UV curable resin as an adhesive material component of the adhesive part, and the non-reacting process is performed by curing the exposed adhesive part by UV irradiation. , Substantially reducing the reactivity to the liquid agent.
When UV curable resin is used as the adhesive material component of the tape, the reactivity of the adhesive part exposed by UV irradiation treatment is reduced, and elution due to contact with various liquid agents (chemicals) required for plating treatment is prevented. obtain.

Alternatively, preferably, an organic solvent-soluble component is included as an adhesive material component of the adhesive part, and the non-reacting treatment is substantially performed by treating the exposed adhesive part with an organic solvent (typically washing by immersion). Removal.
When an organic solvent-soluble substance is used as the adhesive material component of the tape, the adhesive part exposed before the plating process is substantially removed by treating with an appropriate organic solvent, and the elution due to subsequent contact with the liquid agent is eliminated. Can be prevented.

Moreover, this invention provides the sealing material supply apparatus which can be used suitably when performing the said non-reacting process as another aspect.
That is, a suitable sealing material supply device disclosed herein includes a semiconductor wafer attached to an adhesive portion of an adhesive tape for holding a wafer with a portion to be plated exposed, and the tape outside the wafer. A set unit for placing a wafer with a frame consisting of a dicing frame that is attached to the adhesive unit and held together with the wafer via the tape, and wafer exposure of the wafer with a frame disposed in the set unit Sealing material supply means for supplying a sealing material capable of bonding to the surface of the wafer and the frame on the surface side, and the supplied sealing material so that the outer edge portion of the semiconductor wafer and a part of the sealing material overlap. An inner cutting means for cutting at a position slightly inside the wafer and at a position where the portion to be plated can be exposed. An outer cutting means for cutting the supplied sealing material at a position outside the frame from the inner periphery of the frame such that at least an inner edge portion of the dicing frame and a part of the sealing material overlap with each other; and the sealing material for the semiconductor And a sticking means for pressing the outer edge portion of the wafer and / or the inner edge portion of the frame to adhere the sealing material to the portion.
According to the apparatus having such a configuration, the sealing material can be efficiently attached to the frame-equipped wafer for the above-described purpose. That is, it is possible to suitably cover the adhesive portion of the wafer holding adhesive tape that is exposed between the wafer placement portion and the frame placement portion, and to prevent the adhesive portion from coming into contact with the liquid agent during the plating process.

This apparatus preferably includes an excluding means for excluding the sealing material piece cut by the inner cutting means from the vicinity of the wafer surface.
By eliminating the sealing material fragment, it is possible to prevent the fragment from adhering to the wafer surface and covering the surface to be plated (for example, a circuit pattern forming portion) on the wafer surface.

  Hereinafter, preferred embodiments of the present invention will be described. It should be noted that matters other than matters specifically mentioned in the present specification (for example, the configuration and composition of the dicing frame, the wafer holding adhesive tape and the sealing material, and the configuration of the sealing material supply device) Necessary matters (for example, a method for producing a wafer, a method for forming a circuit pattern on a wafer, and a composition of a liquid agent required for plating) can be grasped as a design matter of a person skilled in the art based on conventional techniques in the field. The present invention can be carried out based on the contents disclosed in this specification and common technical knowledge in the field.

  The semiconductor element manufacturing method of the present invention is an implementation process in which a wafer on which a plurality of circuit patterns to be included in a target semiconductor element are arranged is integrally held on a dicing frame by a wafer holding adhesive tape, and thereafter a plating process is performed. The type and shape of the wafer used in the method, the structure of the electronic circuit pattern formed on the wafer and the content thereof are not particularly limited. Similarly, the semiconductor element manufactured by the method of the present invention may be any element as long as it finally has a plating layer at least partially, and the method of the present invention can be used for a specific purpose / application, a specific type / shape. It is not intended to be limited to the production of For example, a semiconductor element having a plated layer for the purpose of improving solderability on the surface (for example, a power device such as an IC chip or a MOS FET mounted on a multilayer (built-in electronic component) substrate / module) is disclosed herein. It is an example of the semiconductor element suitably manufactured by one of the manufacturing methods described.

  The semiconductor element manufacturing method of the present invention may include various processes in accordance with the contents (structure) of the semiconductor element to be manufactured in addition to the above-described processes that characterize the present invention. As such additional steps, a step of doping impurities, a step of forming a predetermined pattern of wiring (electrode layer) or oxide film on the surface of the wafer, a step of thinly grinding the wafer, an electrode on the element (chip) before or after plating And the step of checking the conductivity of the element obtained after dicing. These steps (processes) may be the same as those appropriately performed according to the purpose in the manufacture of a general semiconductor element, and it is not necessary to employ a special technique in carrying out the present invention.

A processing flow of a preferred embodiment of the manufacturing method disclosed herein is schematically shown in FIG. (1) to (5) in this figure are a semiconductor wafer 5 (hereinafter also referred to as “element assembly substrate 5”) in which a plurality of circuit patterns of the semiconductor elements are arranged on at least one surface used in the practice of the present invention. Regarding production. That is, first, a metal thin film (electrode layer) 2 is formed on one surface (surface) of a wafer 1 having a predetermined size and thickness by sputtering or other vapor deposition methods, and then a photolithography method or a laser method (dry process). A predetermined circuit pattern is formed by adopting the above (1). Next, a reinforcing seal 3 is affixed to the side on which the electrode layer 2 constituting the predetermined circuit pattern is formed (2), and the wafer 1 is ground and thinned (3). Then, if desired, a metal thin film (electrode layer) 4 is formed on the ground surface (back surface) side of the wafer 1 by the same method as that on the front surface side to form a predetermined circuit pattern (4). Thereafter, the reinforcing seal 3 is peeled off to obtain an element assembly substrate 5 composed of the wafer 1 on which a plurality of circuit patterns constituting the target semiconductor element are arranged (5).
In carrying out the present invention, a wafer (that is, an element assembly substrate) 5 on which a target circuit pattern is formed may be prepared (for example, purchased) for a later process, and FIGS. It is not necessary to carry out the steps shown in FIG.

Next, the obtained element assembly substrate 5 is attached to the wafer holding adhesive tape 6, and a dicing frame 7 having general properties used for dicing is attached to the outside (6). A plan view of this state is shown in FIG.
Here, as the adhesive tape 6 for holding the wafer, as shown in FIG. 3 which is a partially enlarged cross-sectional view of FIG. 1 (6), an adhesive portion 6b is formed on one surface of the tape base 6a. The assembly substrate 5 and the dicing frame 7 are not particularly limited as long as the assembly substrate 5 and the dicing frame 7 can be held together. Typically, a dicing adhesive tape conventionally used for holding a wafer together with a dicing frame can be used without particular limitation. For example, UV (ultraviolet) curable resin (for example, UV curable acrylic resin), organic solvent soluble substance, thermal foaming property is used as the adhesive material component in the adhesive portion 6b so that the element assembly substrate 5 can be easily peeled after dicing. A substance or a removable substance can be used. Moreover, as the tape base material 6a, those made of various synthetic resins such as polyvinyl chloride (PVC), polyethylene terephthalate (PET), polyolefin (PO) and the like can be used. It is preferable to employ a polymer base material that can be stretched after dicing, for example, a polyester resin.

Further, as the dicing frame 7, those conventionally used for holding the wafer in the dicing process can be used without any particular limitation, and the configuration and shape are not particularly limited. For example, stainless steel can be used as the material. The shape can be appropriately selected according to the shape of the wafer and the shape of the apparatus (for example, plating tank) used for the plating process. For example, an octagonal, hexagonal, or substantially circular frame as viewed from above. Can be adopted.
In particular, the dicing frame 7 has a hook 20 as shown in FIG. 4 or one shown in FIG. 5 at one end of the dicing frame 7 so that the dicing frame 7 can be easily immersed and pulled up in each liquid agent during the plating process. The hooking hole 22 can be formed. According to this structure, a wire etc. can be latched in the hook 20 or the hooking hole 22, and a plating process, ie, immersion to each liquid agent, and pulling-up can be carried out easily. This eliminates the need for a wafer holding rack or the like that is normally used during plating. Therefore, the process for holding the wafer in the rack can be reduced, the workability is simplified, and the manufacturing cost is also reduced. In FIG. 4 and FIG. 5, the positions where the hooks 20 or the hooking holes 22 are provided are provided at four locations on one end side. However, the present invention is not limited to this, and it depends on the shape of the dicing frame and the plating apparatus. And a suitable position and number can be selected as appropriate.

As shown in the drawing, by holding the element assembly substrate 5 integrally with the dicing frame 7, the wafer (or the element before dicing) at the time of the plating process even if it is not handled carefully as in the case of only a thin plate-shaped wafer. The frequency of breakage is extremely low. For this reason, the loss at the time of a plating process can be suppressed, and more elements can be efficiently manufactured from one wafer.
The order in which the wafer holding adhesive tape 6 is affixed to the element assembly substrate 5 and the dicing frame 7 may be any order, and the dicing frame 7 is first affixed to the wafer holding adhesive tape 6 and then the element. The collective substrate 5 may be attached, or vice versa. In particular, since the workability is good and positioning is easy, it is preferable that the wafer holding pressure-sensitive adhesive tape 6 is attached at the same time after the element assembly substrate 5 and the dicing frame 7 are arranged at predetermined positions.

  A frame-equipped wafer (element-attached substrate with frame) 8 in which the element assembly substrate 5 is integrally held on the dicing frame 7 via the wafer holding adhesive tape 6 is disposed on the element assembly substrate 5 and the dicing frame 7. The adhesive portion 6b of the adhesive tape 6 can be exposed between the portions. In a preferred embodiment, the exposed adhesive portion 6b is treated so as not to react with each liquid agent before plating, that is, non-reacting treatment is performed.

For example, as one preferred mode, in the non-reacting process, the exposed adhesive portion 6b of the element assembly substrate with frame 8 is covered with the sealing material 10 (7). Preferably, a sealing material (protective tape) 10 is affixed from the outer edge (outer periphery) portion on the surface 11 side of the element assembly substrate 5 to the inner edge (inner periphery) portion of the dicing frame 7. A plan view of this state is shown in FIG. At this time, since the electrode layer 2 constituting the circuit pattern formed on the surface of the wafer 1 needs to be exposed for the plating process, the sealing material 10 is disposed from a position outside the portion. is required. For example, the inner diameter of the sealing material 10 is preferably about 1 to 5 mm smaller than the outer periphery of the element assembly substrate 5 (that is, the wafer 1). The adhesive part 6b exposed by the sealing material 10 is blocked from the outside, and various reactive liquid agents can be prevented from coming into contact with the adhesive part 6b during the plating process. For this reason, it is prevented that the adhesive component elutes from the adhesive part 6b to the liquid agent (various plating solutions).
As a structure of the sealing material 10, what is necessary is just a tape which has an adhesion part in one surface, and the structure is not specifically limited. For example, the same one as the wafer holding adhesive tape 6 (adhesive tape having exactly the same composition may be used) can be adopted.

  Alternatively, in another preferred embodiment, when a UV curable resin is used as the adhesive material component of the wafer holding adhesive tape 6, for example, as shown in FIG. By reacting the attached element assembly substrate 8 with UV irradiation, the reactivity of the exposed adhesive portion 6b to the liquid agent can be substantially reduced (7 '). As a tape containing a UV curable resin component, a conventionally known tape (for example, a commercially available UV curable dicing adhesive tape) can be used without particular limitation. Further, any UV irradiation device may be used as the UV irradiation means, and particularly preferably, the device used for peeling the UV curable adhesive tape from the wafer after dicing is used as it is. Can do. At this time, even if UV irradiation is performed from the adhesive part 6b side, the adhesive part 6b on which the element assembly substrate 5 and the dicing frame 7 are arranged is shielded from UV light by these components. There is no possibility of peeling from the element assembly substrate 5 and the dicing frame 7.

  Alternatively, in another preferred embodiment, when an organic solvent-soluble substance (for example, organic solvent-soluble polyester resin, polyvinyl acetate, polyvinyl butyral) is used as the adhesive material component of the wafer holding adhesive tape 6, non-reaction As the chemical conversion treatment, an immersion treatment (cleaning treatment) may be performed using a suitable organic solvent before the plating treatment to substantially remove the adhesive material component. As a tape using an organic solvent-soluble component, a conventionally known tape can be used without particular limitation, and is available from the market. The organic solvent is not particularly limited as long as it is any organic solvent that does not affect the element assembly substrate 5. Specific examples include hydrocarbons such as toluene and xylene, alcohols such as methanol, ketones such as acetone, esters, ethers, and the like.

  Further, the plating layer 12 is formed on the surface of the obtained element assembly substrate 5 (8 or 8 '). As shown in FIG. 1 (8), when the sealing material 10 is attached, the end face of the element assembly substrate 5 is shielded from the outside by the sealing material 10, so that it does not come into contact with the electroless plating solution. The plating layer is not formed. Further, as shown in FIG. 7 (8 ′), even when a UV curable resin component or an organic solvent soluble component is used as the adhesive material component of the wafer holding adhesive tape 6 without using the sealing material 10, Since the surface electrode layer 2 is not formed on the end face of the collective substrate 5, it does not react with the electroless plating solution and no plating layer is formed. Here, the plating layer 12 is formed on the surface electrode layer 2 side in order to impart solderability to the surface of the element assembly substrate 5 to be obtained.

  The content of the plating treatment is not particularly limited, and can be performed by employing a conventionally known method such as an electrolytic plating method, a vacuum plating method, an electroless plating method, or the like. In the method of the present invention, it is not necessary to prepare a power source, an electrode, etc., rather than an electrolytic plating method in which it is necessary to equip a wafer with an electrode (conductor) for plating. It is preferable to employ an electroless plating method (for example, based on a zincate method) that can form a plating layer. As the electroless plating method (for example, electroless nickel plating), any conventionally known means may be applied, and the plating process itself does not particularly characterize the present invention. For example, as shown in FIG. 8, a plating process (typically, by manually or automatically immersing the framed element assembly substrate 8 in processing tanks 65 a to 65 e that respectively store a plurality of liquid agents required for the plating process. Can perform electroless plating treatment). Moreover, this process can also be applied to pretreatment in, for example, electrolytic plating treatment.

Then, each chip (semiconductor element) 14 corresponding to the semiconductor element can be obtained by dividing the element assembly substrate 5 on which the plating layer 12 is formed as described above into circuit patterns by an appropriate dicing apparatus. Yes (9)
When the sealing material 10 is used, it may be peeled off either before or after dicing. Considering the mechanical strength of the wafer, it is preferable to carry out after dicing. Here, since the element assembly substrate 5 is integrally held by the dicing frame 7 in advance, the dicing process can be performed in this state. In addition, since a dummy substrate and a protective member for reinforcement are not used as in the prior art, they need not be peeled off, the workability is good, and the element assembly substrate 5 is prevented from being damaged. In addition, the element assembly substrate 5 has no residual adhesive or the like for holding it, and has good solderability in the next process.

Although not necessary for the implementation of the present invention, typically, the chip (semiconductor element) 14 manufactured as described above is mounted on another circuit board or the like. That is, as shown in FIG. 1, each chip 14 is mounted (soldered) on a predetermined circuit board 16 using solder 18 (10). Further, the electronic component 20 such as a substrate or an electrode can be mounted on the surface side to which the plating layer 12 is applied using the solder 22 (11).
Through the above process, in addition to the semiconductor element 14 alone (for example, an IC chip alone), a component-embedded substrate formed by mounting the element 14 together with other electronic components and other functional modules can be manufactured.

Next, a method for sticking the sealing material 10 (here, the same protective tape as the wafer holding adhesive tape 6) to the element assembly substrate with frame 8 will be described in more detail.
The sealing material 10 has a predetermined size and shape (that is, as shown in FIG. 6, the inner circumference is smaller than the outer circumference of the element assembly substrate 5 and outside the circuit pattern arrangement, and the outer circumference is The dicing frame 7 is cut into a ring shape that is larger than the inner circumference and smaller than the outer circumference), and this may be applied from the outer edge portion of the element assembly substrate 5 to the inner edge portion of the dicing frame 7, and the method is particularly limited. Is not to be done. For example, as a method for cutting the sealing material 10, the sealing material 10 can be cut with a cutter that has a predetermined size and shape. Moreover, it can cut | disconnect by the cutting means which can be controlled so that it may move along predetermined magnitude | size and a shape. Moreover, as a sticking means of the sealing material 10, the sealing material 10 cut into a predetermined shape can be attached to the element assembly substrate 5 arranged at a predetermined position by manual operation or automatically positioned and attached by pressing or heating. .

The sticking of the sealing material 10 can be preferably carried out by an apparatus shown below. A sealing material supply apparatus 100 according to a specific embodiment will be described with reference to FIG.
The apparatus 100 mainly includes a set unit 101 and a sealing material pasting unit 102, and the sealing material pasting unit 102 mainly includes a sealing material supply unit 103, a cut unit 105, and a pasting unit 107. Composed. FIG. 9 shows the apparatus 100 in a state where the sealing material 10 and the element assembly substrate 8 with the frame are arranged in order to explain the function, but the apparatus 100 is not included in the configuration of the apparatus 100.

The set portion 101 constitutes a support base that can fix the element assembly substrate 8 with the frame, and has a flat and typically circular mounting surface 110. As a method for fixing the element assembly substrate 8 with the frame, any conventionally known means may be used, but it is preferable to fix by means of vacuum suction or electrostatic suction. It should be noted that this kind of conventional mechanism may be applied as it is as the vacuum suction means or the electrostatic suction means, and no special mechanism is required for carrying out the present invention. For example, as in a conventional electrostatic chuck, a suction voltage (for example, about 200 to 1000 V) is applied to the set unit 101 from a separately prepared suction power source to generate suction static electricity on the mounting surface 110. Means for obtaining may be provided. Alternatively, a number of small suction holes are provided on the mounting surface 110 of the set unit 101 so as to constitute a conventional vacuum suction device, and these are communicated with a suction vacuum pump prepared separately to operate the vacuum pump. It is preferable to provide means for sucking and adsorbing the element assembly substrate with frame 8 on the mounting surface 110. Since the contents of these vacuum suction means or electrostatic suction means themselves may have a conventional configuration and do not characterize the present invention, detailed description thereof will be omitted.
In addition, a heater (not shown) is built in the set unit 101 so that the processing temperature (for example, about 50 to 100 ° C.) when the protective seal 10 is bonded can be controlled.

The sealing material supply means 103 supplies the sealing material 10 to the wafer exposed surface side of the element assembly substrate with frame 8 arranged in the set unit 101. The supply method may be any conventionally known means, but typically, it is preferable to supply the seal material 10 to a predetermined position from a roller 10a around which the belt-shaped seal material 10 is wound. In FIG. 9, the sealing material supply means 103 has a delivery part 112, a positioning roller 114, and a winding part (not shown). With this configuration, the sealing material 10 is first supplied from the sealing material roller 10 a disposed in the delivery unit 112. Then, while being held in a substantially horizontal state by positioning rollers 114 provided at both ends on the wafer exposed surface side of the element assembly substrate 8 with the frame, it is pulled with an appropriate tension by the winding portion, and the wafer exposed surface side It is arranged without slack.
The sealing material supply means 103 sequentially supplies the sealing material 10 from the delivery unit 112 using the sealing material roller 10a, thereby sequentially replacing the plurality of frame-equipped element aggregate substrates 8 and continuously changing the sealing material 10 to each other. It is possible to supply.

The cut part 105 includes an inner cut part 116 and an outer cut part 117. The inner cut portion 116 is provided with a disk-like support base 116a that is connected to a motor (not shown) and can move in the vertical direction, and the cutting edge is directed in the direction of the sealing material 10 along the edge of the support base 116a. A blade portion (ring-shaped cutter) 116b is provided. The blade portion 116b as the inner cutting means has a substantially circular shape when viewed from the blade edge direction, and has a diameter that is smaller than the outer periphery of the element assembly substrate 5 (that is, the wafer 1) and outside the circuit pattern forming portion. Is formed. Thus, the sealing material 10 can be cut into an appropriate inner circumference by moving the support base 116a downward and pressing the blade portion 116b in the direction of the sealing material 10 (arrow A direction). After cutting the sealing material 10, the support base 116a is lifted in the direction opposite to the arrow A and returned to the original position.
The inner cut portion 116 is provided with an excluding means for excluding the cut sealing material piece 10b from the vicinity of the frame-equipped element assembly substrate 8 (that is, the wafer surface). Preferably, the sealing material piece 10b is sucked and collected in the direction of arrow C in FIG. The recovery method may be any conventionally known means, but is preferably recovered by vacuum suction or electrostatic suction. It should be noted that this type of conventional mechanism may be applied as it is as the vacuum suction unit or the electrostatic suction unit. For example, a mechanism similar to that described for fixing the frame-attached element assembly substrate 8 in the set unit 101 is used. Can be applied. That is, as in a conventional electrostatic chuck, a suction voltage (for example, about 200 to 1000 V) is applied to the inner cut portion 116 from a separately prepared power source to generate static electricity for suction on the support 116a. Means for obtaining may be provided. Alternatively, a number of small suction holes are provided in the support base 116a of the inner cut portion 116 so as to constitute a conventional vacuum suction device, and these are communicated with a suction vacuum pump prepared separately to operate the vacuum pump. It is preferable to provide means for sucking and adsorbing the sealing material piece 10b on the support base 116a. Since the contents of these vacuum suction means or electrostatic suction means themselves may have a conventional configuration and do not characterize the present invention, detailed description thereof will be omitted. Note that the exclusion (collection) means can be independently provided at an appropriate position without being attached to the inner cut portion 116.

On the other hand, the outer cut portion 117 is disposed outside the inner cut portion 116, and is provided with a substantially octagonal ring-shaped support base 117a that is connected to a motor (not shown) and can move in the vertical direction, and the support base 117a. A blade portion (ring-shaped cutter) 117b whose blade edge is directed in the direction of the sealing material 10 is provided. The blade portion 117b as the outer cutting means has a substantially octagonal ring shape corresponding to the shape of the dicing frame 7 when viewed from the blade edge direction, and its diameter is larger than the inner periphery of the dicing frame 7 and its outer periphery. It is formed to have a smaller size. Thus, by moving the support base 117a downward and pressing the blade portion 117b in the direction of the sealing material 10 (arrow B direction), the sealing material 10 can be cut into an appropriate outer periphery. After the sealing material 10 is cut, the support base 117a is lifted in the direction opposite to the arrow B.
The inner cut portion 116 and the outer cut portion 117 are provided with ring-shaped blade portions 116a and 117a equivalent to a desired cut shape. However, the inner cut portion 116 and the outer cut portion 117 are desired instead of a means for pressing such ring-shaped blade portions. It is also possible to use a blade portion of a mechanism that moves the blade edge (the shape is not limited) along the cut shape. In this case, even if element assembly substrates or dicing frames 7 having different sizes and shapes are used, the cut portion 105 can be used without being changed. Further, the blade portions 116a and 117a are constituted by a plurality of blade pieces so that the shapes and sizes of the blade portions 116b and 117b of the inner cut portion 116 and the outer cut portion 117 can be changed, and the support bases 116a and 117a The position may be movable. Or you may provide the inner side cut part 116 and the outer side cut part 117 in the sealing material sticking part 102 so that replacement | exchange is possible suitably. In this way, the sealing material 10 can be cut into an appropriate shape and size according to the shape and size of the element assembly substrate 5 and the dicing frame 7 in different element assembly substrates 8 with frames.

  The sticking portion 107 formed in an annular shape so as to surround the inner cut portion 116 may be made of any material, but may preferably be made of an elastic body. The affixing portion 107 is a member that can be adhered by adhering the sealing material 10 to the element assembly substrate 5 or the dicing frame 7 by pressing the sealing material 10 in the arrow D direction. The affixing unit 107 includes a wafer pressing unit 107a that is connected to a motor and can move in the vertical direction, and a frame pressing unit 107b that slides separately from the wafer pressing unit 107a and can move in the vertical direction. As shown in the figure, the wafer pressing portion 107 a can press the sealing material 10 against the outer peripheral portion of the element assembly substrate with frame 8 (that is, the element assembly substrate 5), while the frame pressing portion 107 b is the inner peripheral portion of the dicing frame 7. It is arranged and formed at a position where the sealing material 10 can be pressed. As a result, the sealing material 10 can be securely attached to both the element assembly substrate 5 and the dicing frame 7 with a strong adhesive force. As shown in the figure, the frame pressing portion 107b is provided with a groove that can penetrate the blade portion 117b. In addition, as the sticking portion 107, only one of the wafer pressing portion 107a and the frame pressing portion 107b may be provided. Also in this case, the sealing material 10 can be pressed against the element assembly substrate 5 or the dicing frame 7 by operating either the wafer pressing part 107a or the frame pressing part 107b. Thereby, the sealing material 10 can be adhere | attached.

Next, referring to FIG. 10, a method for operating the apparatus 100 and sticking the sealing material 10 to the frame-equipped element assembly substrate 8 will be described in order.
First, the element assembly substrate with frame 8 is fixed so that the sealing material 10 is attached to the set part 101 (1). Next, the set part 101 is heated to a sealing material bonding temperature (for example, about 80 ° C.). Then, the sealing material roller 10a is set on the sealing material supply means 103, and the sealing material 10 is disposed on the exposed surface side of the element assembly substrate 5 (2). Further, by pressing the inner cut portion 116 against the seal material 10 in the direction of the arrow, the seal material 10 is cut and the circular seal material fragments 10b cut by the collecting means provided in the inner cut portion 116 are eliminated. (3). Further, the affixing portion 107 is pushed down in the direction of the arrow with a predetermined pressure, whereby the affixing portion 107 is pressed against the sealing material 10 and affixed to the element assembly substrate 5 and the dicing frame 7 (4). At this time, in the element assembly substrate with frame 8 used in this example, the vertical thickness (height) of the outer edge portion of the element assembly substrate 5 is larger than the vertical thickness (height) of the dicing frame 7. The element assembly substrate pressing portion 107a is further pressed down than the frame pressing portion 107b. However, the positions and pressing forces of the element assembly substrate pressing portion 107a and the frame pressing portion 107b can be appropriately changed according to the thickness of the outer edge portion of the element assembly substrate of the element assembly substrate with frame and the thickness of the dicing frame. it can.
For example, unlike the present embodiment, the thickness of the dicing frame 7 in the vertical direction is different from that of the present embodiment by providing the frame pressing unit 107b that is connected to the motor and can be moved independently in the vertical direction separately from the wafer pressing unit 107a. Even when the height) is thinner (lower) than the thickness (height) in the vertical direction of the outer edge portion of the element assembly substrate 5, the sealing material 10 is pressed against each of the element assembly substrate 5 and the dicing frame 7. Can be pasted.
Next, the outer cut portion 117 is pressed against the sealing material 10 in the direction of the arrow to cut the outer periphery of the sealing material 10 (5). By pasting the sealing material 10 and then cutting the outer periphery, the sealing material 10 can be easily positioned, and the sealing material 10 can be accurately adhered to a predetermined position. The attaching step (4) and the outer cutting step (5) may be performed in any order. For example, the outer periphery of the sealing material 10 is cut and then attached to the element assembly substrate 5 and the dicing frame 7. You can also. Finally, the sealing material attaching portion 102 is lifted in the direction of the arrow, and the frame-attached element assembly substrate 8 with the sealing material 10 attached at a predetermined position can be taken out (6).

  Thereafter, from the step (1) of arranging the next element assembly substrate with a frame again, the sealing material can be continuously pasted to a plurality of element assembly substrates with a frame. In the sealing material supply step (2), the sealing material is sequentially sent to the winding unit via the positioning roller 114 on the winding unit side.

  The preferred embodiments of the present invention have been described in detail above, but these are only examples and do not limit the scope of the claims. The technology described in the claims includes various modifications and changes of the above-described embodiments. In addition, the technical elements described in the present specification or the drawings exhibit technical usefulness alone or in various combinations, and are not limited to the combinations described in the claims at the time of filing. In addition, the technology illustrated in the present specification or the drawings achieves a plurality of objects at the same time, and has technical utility by achieving one of the objects.

Explanatory drawing which shows typically the manufacturing process of the manufacturing method of this invention which concerns on one Embodiment. The top view which shows the state which hold | maintained the element assembly substrate (wafer) which concerns on one Embodiment to the flame | frame for dicing. The expanded sectional view of the principal part of Drawing 1 (6). Explanatory drawing which shows typically an example of the frame for dicing which concerns on one Embodiment. Explanatory drawing which shows typically the other example of the frame for dicing which concerns on one Embodiment. Explanatory drawing which shows the example which affixed the sealing material on the wafer with a frame which concerns on one Embodiment. Explanatory drawing which shows the UV irradiation process process which concerns on one Embodiment. Explanatory drawing which shows the plating process process which concerns on one Embodiment typically. Explanatory drawing which shows typically the sealing material supply apparatus of this invention which concerns on one Embodiment. Explanatory drawing which shows typically the usage method which concerns on one Embodiment of the sealing material supply apparatus shown in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Wafer 2, 4 ... Electrode layer 5 ... Element assembly substrate (wafer on which a circuit pattern is formed)
6 ... Wafer holding adhesive tape 6a ... Adhesive part 7 ... Dicing frame 8 ... Element assembly substrate with frame 10 ... Sealing material 12 ... Plating layer 14 ... Chip (element)
65a, 65b, 65c, 65d, 65e ... plating treatment tank 100 ... sealing material supply device 101 ... set unit 102 ... sealing material application unit 103 ... sealing material supply unit 105 ... cut unit 107 ... application unit 116 ... inner cut unit 117 ... Outside cut part

Claims (7)

A method of manufacturing a semiconductor element comprising a plating layer,
A semiconductor wafer in which a plurality of circuit patterns of the semiconductor element are arranged on at least one surface and at least one surface side is to be plated, an adhesive tape for holding a wafer having an adhesive portion formed on at least one surface, and dicing Preparing a frame for use;
Affixing one surface of the wafer to the adhesive portion of the tape and affixing the frame to the outside thereof, and holding the wafer and the frame together via the tape;
A process of forming a plating layer on the surface of the wafer by processing with a plurality of liquid agents required for the plating process while holding the wafer on the frame;
Dicing the wafer into a plurality of chips having a predetermined circuit pattern;
Manufacturing method.   Prior to the plating layer forming step, non-reacting that does not substantially react the adhesive part that is part of the adhesive part of the tape and exposed without contacting either the frame or the wafer. The manufacturing method of Claim 1 including the process of processing.   The manufacturing method according to claim 2, wherein the non-reacting process includes applying a sealing material from an outer peripheral portion of the surface of the held wafer to the frame to cover the exposed adhesive portion. .   A UV curable resin component is included as an adhesive material component of the adhesive portion, and the non-reacting treatment substantially reduces the reactivity to the liquid agent by curing the exposed adhesive portion by UV irradiation. The manufacturing method of Claim 2 containing.   The organic solvent-soluble component is included as an adhesive material component of the adhesive portion, and the non-reacting treatment includes substantially removing the exposed adhesive portion by treating with an organic solvent. Production method. A semiconductor wafer attached to the adhesive portion of the wafer holding adhesive tape with the portion to be plated exposed, and the wafer attached to the adhesive portion of the tape outside the wafer and through the tape A set unit for placing a wafer with a frame consisting of a dicing frame held integrally with
Sealing material supply means for supplying a sealing material capable of bonding to the surface of the wafer and the frame to the wafer exposed surface side of the frame-equipped wafer disposed in the set unit;
The portion of the supplied sealing material that is to be plated may be exposed at a position slightly inside the wafer from the outer periphery so that an outer edge portion of the semiconductor wafer and a part of the sealing material overlap each other. An inner cutting means for cutting at a position;
An outer cutting means for cutting the supplied sealing material at a position outside the frame from the inner periphery of the frame so that at least an inner edge portion of the dicing frame and a part of the sealing material overlap with each other;
An affixing means for pressing the sealing material against an outer edge portion of the semiconductor wafer and / or an inner edge portion of the frame to adhere the sealing material to the portion;
A sealing material supply device.   The apparatus according to claim 6, further comprising an excluding unit that excludes a sealing material fragment cut by the inner cutting unit from the vicinity of the wafer surface.

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