ZA877875B - Heterojunction p-i-n photovoltaic cell - Google Patents

Heterojunction p-i-n photovoltaic cell

Info

Publication number
ZA877875B
ZA877875B ZA877875A ZA877875A ZA877875B ZA 877875 B ZA877875 B ZA 877875B ZA 877875 A ZA877875 A ZA 877875A ZA 877875 A ZA877875 A ZA 877875A ZA 877875 B ZA877875 B ZA 877875B
Authority
ZA
South Africa
Prior art keywords
layer
type
heterojunction
photovoltaic cell
semiconductor layer
Prior art date
Application number
ZA877875A
Other languages
English (en)
Inventor
Peter V Meyers
V Meyers Peter
Chung-Heng Liu
Liu Chung-Heng
Timothy J Frey
J Frey Timothy
Original Assignee
Ametek Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25446528&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ZA877875(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Ametek Inc filed Critical Ametek Inc
Publication of ZA877875B publication Critical patent/ZA877875B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
ZA877875A 1986-10-21 1987-10-20 Heterojunction p-i-n photovoltaic cell ZA877875B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/922,122 US4710589A (en) 1986-10-21 1986-10-21 Heterojunction p-i-n photovoltaic cell

Publications (1)

Publication Number Publication Date
ZA877875B true ZA877875B (en) 1988-06-29

Family

ID=25446528

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA877875A ZA877875B (en) 1986-10-21 1987-10-20 Heterojunction p-i-n photovoltaic cell

Country Status (10)

Country Link
US (1) US4710589A (ja)
EP (1) EP0265251B1 (ja)
JP (1) JP2702129B2 (ja)
KR (1) KR960004097B1 (ja)
AT (1) ATE119712T1 (ja)
AU (1) AU604509B2 (ja)
CA (1) CA1299715C (ja)
DE (1) DE3751133D1 (ja)
IL (1) IL84217A (ja)
ZA (1) ZA877875B (ja)

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US4873198A (en) * 1986-10-21 1989-10-10 Ametek, Inc. Method of making photovoltaic cell with chloride dip
US4753684A (en) * 1986-10-31 1988-06-28 The Standard Oil Company Photovoltaic heterojunction structures
US4764261A (en) * 1986-10-31 1988-08-16 Stemcor Corporation Method of making improved photovoltaic heterojunction structures
EP0296371B1 (de) * 1987-06-22 1992-12-23 Landis & Gyr Business Support AG Photodetektor für Ultraviolett und Verfahren zur Herstellung
US5286306A (en) * 1992-02-07 1994-02-15 Shalini Menezes Thin film photovoltaic cells from I-III-VI-VII compounds
US5393675A (en) * 1993-05-10 1995-02-28 The University Of Toledo Process for RF sputtering of cadmium telluride photovoltaic cell
US5621238A (en) * 1994-02-25 1997-04-15 The United States Of America As Represented By The Secretary Of The Air Force Narrow band semiconductor detector
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US5922142A (en) * 1996-11-07 1999-07-13 Midwest Research Institute Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making
US20060021648A1 (en) * 1997-05-09 2006-02-02 Parise Ronald J Device and method to transmit waste heat or thermal pollution into deep space
US5936193A (en) * 1997-05-09 1999-08-10 Parise; Ronald J. Nighttime solar cell
US5909632A (en) * 1997-09-25 1999-06-01 Midwest Research Institute Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films
US6458254B2 (en) 1997-09-25 2002-10-01 Midwest Research Institute Plasma & reactive ion etching to prepare ohmic contacts
US6803322B1 (en) * 2000-12-15 2004-10-12 Science Applications International Corporation Pin alloy-semiconductor, radiation detectors with rectifying junction contacts, methods and systems for forming pin alloy-semiconductor devices with rectifying junction contacts, and systems and methods for analyzing alloy-semiconductor properties
US20050151131A1 (en) * 2002-06-11 2005-07-14 Wager John F.Iii Polycrystalline thin-film solar cells
US20050098202A1 (en) * 2003-11-10 2005-05-12 Maltby Robert E.Jr. Non-planar photocell
DE102005047907A1 (de) * 2005-10-06 2007-04-12 Basf Ag Photovoltaische Zelle mit einem darin enthaltenen photovoltaisch aktiven Halbleitermaterial
US20080128020A1 (en) * 2006-11-30 2008-06-05 First Solar, Inc. Photovoltaic devices including a metal stack
US20090078318A1 (en) * 2007-09-25 2009-03-26 First Solar, Inc. Photovoltaic Devices Including An Interfacial Layer
US20110017298A1 (en) 2007-11-14 2011-01-27 Stion Corporation Multi-junction solar cell devices
US8440903B1 (en) 2008-02-21 2013-05-14 Stion Corporation Method and structure for forming module using a powder coating and thermal treatment process
US8076175B2 (en) 2008-02-25 2011-12-13 Suniva, Inc. Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation
US20090301562A1 (en) * 2008-06-05 2009-12-10 Stion Corporation High efficiency photovoltaic cell and manufacturing method
US20100236607A1 (en) * 2008-06-12 2010-09-23 General Electric Company Monolithically integrated solar modules and methods of manufacture
WO2010009436A2 (en) 2008-07-17 2010-01-21 Uriel Solar Inc. High power efficiency, large substrate, polycrystalline cdte thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation
US20110017257A1 (en) * 2008-08-27 2011-01-27 Stion Corporation Multi-junction solar module and method for current matching between a plurality of first photovoltaic devices and second photovoltaic devices
US20100051090A1 (en) * 2008-08-28 2010-03-04 Stion Corporation Four terminal multi-junction thin film photovoltaic device and method
US8569613B1 (en) * 2008-09-29 2013-10-29 Stion Corporation Multi-terminal photovoltaic module including independent cells and related system
US20100078059A1 (en) * 2008-09-30 2010-04-01 Stion Corporation Method and structure for thin film tandem photovoltaic cell
US8912428B2 (en) * 2008-10-22 2014-12-16 Epir Technologies, Inc. High efficiency multijunction II-VI photovoltaic solar cells
FR2956869B1 (fr) 2010-03-01 2014-05-16 Alex Hr Roustaei Systeme de production de film flexible a haute capacite destine a des cellules photovoltaiques et oled par deposition cyclique des couches
US8563850B2 (en) * 2009-03-16 2013-10-22 Stion Corporation Tandem photovoltaic cell and method using three glass substrate configuration
US8703521B2 (en) 2009-06-09 2014-04-22 International Business Machines Corporation Multijunction photovoltaic cell fabrication
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KR101139443B1 (ko) * 2009-09-04 2012-04-30 엘지전자 주식회사 이종접합 태양전지와 그 제조방법
JP5515613B2 (ja) * 2009-10-22 2014-06-11 株式会社豊田中央研究所 半導体光応答体
JP5813654B2 (ja) * 2009-12-10 2015-11-17 ウリエル ソーラー インコーポレイテッド 太陽光発電における使用のための高電力効率多結晶ＣｄＴｅ薄膜半導体光起電力電池構造
US9837563B2 (en) 2009-12-17 2017-12-05 Epir Technologies, Inc. MBE growth technique for group II-VI inverted multijunction solar cells
US20110272010A1 (en) * 2010-05-10 2011-11-10 International Business Machines Corporation High work function metal interfacial films for improving fill factor in solar cells
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Also Published As

Publication number Publication date
IL84217A0 (en) 1988-03-31
US4710589A (en) 1987-12-01
IL84217A (en) 1992-01-15
DE3751133D1 (de) 1995-04-13
CA1299715C (en) 1992-04-28
EP0265251B1 (en) 1995-03-08
JPS63110777A (ja) 1988-05-16
ATE119712T1 (de) 1995-03-15
JP2702129B2 (ja) 1998-01-21
EP0265251A2 (en) 1988-04-27
KR880005701A (ko) 1988-06-30
EP0265251A3 (en) 1989-04-26
AU8001487A (en) 1988-04-28
KR960004097B1 (ko) 1996-03-26
AU604509B2 (en) 1990-12-20

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