ES8504407A1 - Pila fotovoltaica y procedimiento para su fabricacion - Google Patents
Pila fotovoltaica y procedimiento para su fabricacionInfo
- Publication number
- ES8504407A1 ES8504407A1 ES535004A ES535004A ES8504407A1 ES 8504407 A1 ES8504407 A1 ES 8504407A1 ES 535004 A ES535004 A ES 535004A ES 535004 A ES535004 A ES 535004A ES 8504407 A1 ES8504407 A1 ES 8504407A1
- Authority
- ES
- Spain
- Prior art keywords
- good
- front surface
- surface contact
- semiconductor layer
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000002800 charge carrier Substances 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000035699 permeability Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Abstract
MEJORAS EN UNA PILA VOLTAICA Y EN SU PROCEDIMIENTO DE FABRICACION.CONSISTENTES EN REALIZAR EL CONTACTO DEL LADO DELANTERO (20) CON TRES CAPAS QUE TIENEN DOS MATERIALES DIFERENTES, Y SE COMPONEN DE, UNA CAPA INDUCTORA (22) DE FORMACION DE CONTACTOS QUE FORMA UN ACOPLAMIENTO OHMICO (RESISTIVO) CON LA SEGUNDA CAPA SEMICONDUCTORA (18), UNA CAPA COLECTORA DE CORRIENTE (24) QUE RECOGE LOS PORTADORES DE CARGAS (28) DE LA SEGUNDA CAPA SEMICONDUCTORA (18) Y UNA CAPA DERIVADORA DE CORRIENTE; APLICAR EL SEGUNDO CONTACTO ELECTRICO CONDUCTOR MEDIANTE SUCESIVAS APLICACIONES DE DIFERENTES CAPAS (30) ELECTRICAMENTE CONDUCTORAS; Y APLICAR UNA CAPA (36) SOBRE EL SEGUNDO CONTACTO ELECTRICO CONDUCTOR, PARA DESACOPLAR MECANICAMENTE EL ELEMENTO DE CUBIERTA (34).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19833328869 DE3328869A1 (de) | 1983-08-10 | 1983-08-10 | Photovoltaische zelle und verfahren zum herstellen dieser |
Publications (2)
Publication Number | Publication Date |
---|---|
ES8504407A1 true ES8504407A1 (es) | 1985-04-16 |
ES535004A0 ES535004A0 (es) | 1985-04-16 |
Family
ID=6206233
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES535004A Granted ES535004A0 (es) | 1983-08-10 | 1984-08-09 | Pila fotovoltaica y procedimiento para su fabricacion |
Country Status (6)
Country | Link |
---|---|
US (1) | US4707561A (es) |
EP (1) | EP0133698B1 (es) |
JP (1) | JPS60167387A (es) |
DE (2) | DE3328869A1 (es) |
ES (1) | ES535004A0 (es) |
IN (1) | IN163068B (es) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4694115A (en) * | 1986-11-04 | 1987-09-15 | Spectrolab, Inc. | Solar cell having improved front surface metallization |
US5011544A (en) * | 1989-09-08 | 1991-04-30 | Solarex Corporation | Solar panel with interconnects and masking structure, and method |
US5151386A (en) * | 1990-08-01 | 1992-09-29 | Mobil Solar Energy Corporation | Method of applying metallized contacts to a solar cell |
DE19937910A1 (de) * | 1999-08-11 | 2001-03-15 | Inst Angewandte Photovoltaik G | Elektrode und photoelektrochemische Zelle sowie Verfahren zur Herstellung einer kohlenstoffhaltigen, druckfähigen Paste und einer Elektrode |
DE102005019225B4 (de) * | 2005-04-20 | 2009-12-31 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Heterokontaktsolarzelle mit invertierter Schichtstrukturgeometrie |
TWI493605B (zh) * | 2008-06-11 | 2015-07-21 | Ind Tech Res Inst | 背面電極層的製造方法 |
US10186628B2 (en) * | 2014-06-20 | 2019-01-22 | Vismunda Srl | Apparatus for the automatic horizontal assembly of photovoltaic panels |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE789331A (fr) * | 1971-09-28 | 1973-01-15 | Communications Satellite Corp | Cellule solaire a geometrie fine |
GB1504854A (en) * | 1974-03-21 | 1978-03-22 | Int Research & Dev Co Ltd | Photodetectors and thin film photovoltaic arrays |
US3990914A (en) * | 1974-09-03 | 1976-11-09 | Sensor Technology, Inc. | Tubular solar cell |
US4400244A (en) * | 1976-06-08 | 1983-08-23 | Monosolar, Inc. | Photo-voltaic power generating means and methods |
DE2732933C2 (de) * | 1977-07-21 | 1984-11-15 | Bloss, Werner H., Prof. Dr.-Ing., 7065 Winterbach | Verfahren zum Herstellen von Dünnschicht-Solarzellen mit pn-Heteroübergang |
US4254546A (en) * | 1978-09-11 | 1981-03-10 | Ses, Incorporated | Photovoltaic cell array |
US4267398A (en) * | 1979-05-29 | 1981-05-12 | University Of Delaware | Thin film photovoltaic cells |
JPS5943102B2 (ja) * | 1979-12-14 | 1984-10-19 | 富士電機株式会社 | 太陽電池 |
US4262161A (en) * | 1980-01-16 | 1981-04-14 | Shell Oil Company | Covered solar cell assembly |
JPS56125879A (en) * | 1980-03-07 | 1981-10-02 | Japan Solar Energ Kk | Solar cell module |
US4359487A (en) * | 1980-07-11 | 1982-11-16 | Exxon Research And Engineering Co. | Method for applying an anti-reflection coating to a solar cell |
US4338482A (en) * | 1981-02-17 | 1982-07-06 | Roy G. Gordon | Photovoltaic cell |
JPS5854678A (ja) * | 1981-09-28 | 1983-03-31 | Hitachi Ltd | 太陽電池素子 |
US4479027A (en) * | 1982-09-24 | 1984-10-23 | Todorof William J | Multi-layer thin-film, flexible silicon alloy photovoltaic cell |
-
1983
- 1983-08-10 DE DE19833328869 patent/DE3328869A1/de not_active Withdrawn
-
1984
- 1984-08-07 DE DE8484109334T patent/DE3482531D1/de not_active Expired - Fee Related
- 1984-08-07 EP EP84109334A patent/EP0133698B1/de not_active Expired - Lifetime
- 1984-08-08 JP JP59165020A patent/JPS60167387A/ja active Pending
- 1984-08-08 IN IN557/CAL/84A patent/IN163068B/en unknown
- 1984-08-09 ES ES535004A patent/ES535004A0/es active Granted
-
1986
- 1986-08-08 US US06/894,713 patent/US4707561A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
IN163068B (es) | 1988-08-06 |
US4707561A (en) | 1987-11-17 |
EP0133698A2 (de) | 1985-03-06 |
DE3482531D1 (de) | 1990-07-19 |
JPS60167387A (ja) | 1985-08-30 |
EP0133698B1 (de) | 1990-06-13 |
ES535004A0 (es) | 1985-04-16 |
DE3328869A1 (de) | 1985-02-28 |
EP0133698A3 (en) | 1985-11-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU1358795A (en) | Method for manufacture of a solar cell and solar cell | |
IL61616A (en) | Multilayer photovoltaic solar cell with semiconductor layer at the shorting junction interface of the layers | |
EP0494090A3 (en) | Photovoltaic device | |
EP1134813A3 (en) | Multijunction photovoltaic cell with thin first (top) subcell and thick second subcell of same or similar semiconductor material | |
ES8500508A1 (es) | Un dispositivo fotovoltaico opticamente mejorado | |
IL84217A (en) | Heterojunction p-i-n photovoltaic cell | |
CA2151736A1 (en) | Method for the manufacture of improved efficient tandem photovoltaic device and device manufactured thereby | |
EP0364780A3 (en) | Solar cell with a transparent electrode | |
ATE19445T1 (de) | Halbleiterbauelement fuer die umsetzung von licht in elektrische energie. | |
ES8504407A1 (es) | Pila fotovoltaica y procedimiento para su fabricacion | |
EP0116651A4 (en) | PHOTOTHYRISTOR. | |
AU498057B2 (en) | High efficiency selenium heterojunction solar cells | |
AU561774B2 (en) | Solar cell with undulated transparent conductive layer | |
EP0984494A4 (en) | SOLAR CELL BATTERY | |
JPS577166A (en) | Amorphous thin solar cell | |
JPS57181176A (en) | High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor | |
JPS5473587A (en) | Thin film solar battery device | |
JPS57122580A (en) | Solar battery | |
JPS56130977A (en) | Solar battery | |
GB2117174B (en) | Multilayer photovoltaic solar cell | |
JPS56122171A (en) | Photovoltaic cell utilized for manufacturing solar battery | |
JPS55141766A (en) | Manufacturing of semiconductor light position detector | |
JPS6466974A (en) | Solar cell | |
ALLENDORF et al. | High concentration silicon photovoltaic cell development[Interim Report, Nov. 1978- Feb. 1980] | |
JPS57183076A (en) | Field control type optical semiconductor device |