GB2117174B - Multilayer photovoltaic solar cell - Google Patents

Multilayer photovoltaic solar cell

Info

Publication number
GB2117174B
GB2117174B GB8205618A GB8205618A GB2117174B GB 2117174 B GB2117174 B GB 2117174B GB 8205618 A GB8205618 A GB 8205618A GB 8205618 A GB8205618 A GB 8205618A GB 2117174 B GB2117174 B GB 2117174B
Authority
GB
United Kingdom
Prior art keywords
layer
substrate
solar cell
layers
cirf
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8205618A
Other versions
GB2117174A (en
Inventor
Lewis M Fraas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chevron USA Inc
Original Assignee
Chevron Research and Technology Co
Chevron Research Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chevron Research and Technology Co, Chevron Research Co filed Critical Chevron Research and Technology Co
Priority to GB8205618A priority Critical patent/GB2117174B/en
Publication of GB2117174A publication Critical patent/GB2117174A/en
Application granted granted Critical
Publication of GB2117174B publication Critical patent/GB2117174B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Sustainable Energy (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A multilayer multijunction photovoltaic solar cell for use with a light concentrating lens 21 comprises a plurality of successive homogeneous layers 31, 32, 33, of mutually different composition on a substrate 11, there being solar energy sensitive pn homojunctions within each layer, and tunnelling shorting heterojunctions between adjacent layers. The layers are lattice matched, and each has the same lattice constant as the substrate to within +/-1%. Each layer absorbs solar spectral energy at a different wavelength. The substrate has no internal solar energy sensitive junction. Preferred materials are Ga0 &cirf& 35 In0.12. As for the substrate and the first layer 31, Ga0.69 In0.31 As0 &cirf& 5 P0.5 for the second layer 32 and In0.5 Ga0.5 P for the third layer 33. Other suitable materials are listed and transparent antireflective surface coating 20 is provided. <IMAGE>
GB8205618A 1982-02-25 1982-02-25 Multilayer photovoltaic solar cell Expired GB2117174B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8205618A GB2117174B (en) 1982-02-25 1982-02-25 Multilayer photovoltaic solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8205618A GB2117174B (en) 1982-02-25 1982-02-25 Multilayer photovoltaic solar cell

Publications (2)

Publication Number Publication Date
GB2117174A GB2117174A (en) 1983-10-05
GB2117174B true GB2117174B (en) 1985-09-25

Family

ID=10528617

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8205618A Expired GB2117174B (en) 1982-02-25 1982-02-25 Multilayer photovoltaic solar cell

Country Status (1)

Country Link
GB (1) GB2117174B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5322572A (en) * 1989-11-03 1994-06-21 The United States Of America As Represented By The United States Department Of Energy Monolithic tandem solar cell
AUPM996094A0 (en) * 1994-12-08 1995-01-05 Pacific Solar Pty Limited Multilayer solar cells with bypass diode protection
JP4064592B2 (en) * 2000-02-14 2008-03-19 シャープ株式会社 Photoelectric conversion device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2319980A1 (en) * 1975-07-28 1977-02-25 Radiotechnique Compelec REVERSIBLE SEMICONDUCTOR OPTOELECTRONIC DEVICE
US4255211A (en) * 1979-12-31 1981-03-10 Chevron Research Company Multilayer photovoltaic solar cell with semiconductor layer at shorting junction interface

Also Published As

Publication number Publication date
GB2117174A (en) 1983-10-05

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19930225