JPS6427278A - Space solar cell - Google Patents

Space solar cell

Info

Publication number
JPS6427278A
JPS6427278A JP62184125A JP18412587A JPS6427278A JP S6427278 A JPS6427278 A JP S6427278A JP 62184125 A JP62184125 A JP 62184125A JP 18412587 A JP18412587 A JP 18412587A JP S6427278 A JPS6427278 A JP S6427278A
Authority
JP
Japan
Prior art keywords
solar cell
photodetecting
radiation
face
low temperatures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62184125A
Other languages
Japanese (ja)
Inventor
Yoshiaki Tonomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62184125A priority Critical patent/JPS6427278A/en
Publication of JPS6427278A publication Critical patent/JPS6427278A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain a silicon solar cell having desirable resistance to radiation, operable at low temperatures and hence capable of providing high output, by providing an anti-reflection film adapted mainly for the use in space environments. CONSTITUTION:A silicon substrate 1 consisting of P-type silicon single crystals and having a specular face is provided with a photovoltaic junction 2 at a depth of 0.1-0.2mum from the photodetecting face by diffusion of phosphorus or the like. Charge collecting electrodes 3, 4 are provided on the photodetecting and rear faces, respectively. In particular, the electrode 3 on the photodetecting face is shaped into 'L' with a very narrow width so that it does not inhibit the incidence of light. The photodetecting face is further coated with an antireflection film 5 which is a single film of titanium dioxide or the like having refractive index of 2.35 to 2.45 and a thickness of 550Angstrom to 600Angstrom . Accordingly, the solar cell is allowed to have an maximum output after deterioration on radiation, for example after exposure on radiation for ten years. Further, since the solar cell has a high reflectance in a long wave range, it can operate at relatively low temperatures with its light absorbing ratio reduced.
JP62184125A 1987-07-22 1987-07-22 Space solar cell Pending JPS6427278A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62184125A JPS6427278A (en) 1987-07-22 1987-07-22 Space solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62184125A JPS6427278A (en) 1987-07-22 1987-07-22 Space solar cell

Publications (1)

Publication Number Publication Date
JPS6427278A true JPS6427278A (en) 1989-01-30

Family

ID=16147811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62184125A Pending JPS6427278A (en) 1987-07-22 1987-07-22 Space solar cell

Country Status (1)

Country Link
JP (1) JPS6427278A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000073542A1 (en) * 1999-05-28 2000-12-07 Shin-Etsu Handotai Co., Ltd. CZ SINGLE CRYSTAL DOPED WITH Ga AND WAFER AND METHOD FOR PRODUCTION THEREOF
JP2011165754A (en) * 2010-02-05 2011-08-25 Denso Corp Solar cell module

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654077A (en) * 1979-10-09 1981-05-13 Matsushita Electric Ind Co Ltd Solar battery
JPS57192085A (en) * 1981-05-21 1982-11-26 Toshiba Corp Solar cell and manufacture thereof
JPS5929473A (en) * 1982-08-11 1984-02-16 Toshiba Corp Manufacture of solar battery
JPS6115379A (en) * 1984-06-30 1986-01-23 Toshiba Corp Manufacture of thin film

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654077A (en) * 1979-10-09 1981-05-13 Matsushita Electric Ind Co Ltd Solar battery
JPS57192085A (en) * 1981-05-21 1982-11-26 Toshiba Corp Solar cell and manufacture thereof
JPS5929473A (en) * 1982-08-11 1984-02-16 Toshiba Corp Manufacture of solar battery
JPS6115379A (en) * 1984-06-30 1986-01-23 Toshiba Corp Manufacture of thin film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000073542A1 (en) * 1999-05-28 2000-12-07 Shin-Etsu Handotai Co., Ltd. CZ SINGLE CRYSTAL DOPED WITH Ga AND WAFER AND METHOD FOR PRODUCTION THEREOF
US6815605B1 (en) 1999-05-28 2004-11-09 Shin-Etsu Handotai Co., Ltd. Silicon single crystal and wafer doped with gallium and method for producing them
JP2011165754A (en) * 2010-02-05 2011-08-25 Denso Corp Solar cell module

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