Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/36—Removing material
  • B23K26/40—Removing material taking account of the properties of the material involved
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
  • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
  • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
  • B29C45/02—Transfer moulding, i.e. transferring the required volume of moulding material by a plunger from a "shot" cavity into a mould cavity
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
  • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
  • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
  • B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
  • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
  • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
  • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
  • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
  • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
  • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
  • B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
  • B29C65/16—Laser beams
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
  • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
  • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
  • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
  • B29C65/44—Joining a heated non plastics element to a plastics element
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
  • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
  • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
  • B29C65/48—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
  • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
  • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
  • B29C65/56—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using mechanical means or mechanical connections, e.g. form-fits
  • B29C65/64—Joining a non-plastics element to a plastics element, e.g. by force
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
  • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
  • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
  • B29C65/70—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by moulding
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B15/00—Layered products comprising a layer of metal
  • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
  • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
  • B32B3/10—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a discontinuous layer, i.e. formed of separate pieces of material
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W74/00—Encapsulations, e.g. protective coatings
  • H10W74/01—Manufacture or treatment

Definitions

• This disclosure relates to a bonded structure, a semiconductor device, a method for manufacturing a bonded structure, and a method for manufacturing a semiconductor device.
• Patent Document 1 is a conventional technique for improving the adhesion strength of bonded structures.
• Patent Document 1 discloses a bonding technology in which micrometer-order recesses are formed on the surface of a metal to be bonded to a polymeric material by laser processing, protrusions are formed on the inner walls of the recesses, and nanometer-order pores or recesses are formed on the surface of the protrusions, thereby improving the adhesion of the bonded structure through the effects of anchoring and covalent bonding.
• This disclosure has been made in consideration of the above problems, and one of its objectives is to provide a bonded structure that can achieve sufficient adhesion reliability. It also has another objective to provide a semiconductor device that includes such a bonded structure, a method for manufacturing the bonded structure, and a method for manufacturing the semiconductor device.
• One embodiment of the joined body of the present disclosure comprises a metal member and a resin member joined to the metal member, the joining surface of the metal member having recesses and protrusions, a primer layer formed on the protrusions, and the primer layer on the recesses being thinner than on the protrusions.
• At least a portion of the bonded structure between a surface electrode, a wire, a conductive layer, or an electrode terminal and a resin member is the above-described bonded structure.
• One embodiment of the bonded structure disclosed herein comprises the steps of applying a primer to metal members to form a primer layer, laser-treating the primer layer to form recesses and protrusions on the bonding surfaces of the metal members, and, after forming the recesses and protrusions, bonding and sealing the metal members with a resin member to form a bonded structure.
• At least a portion of a bonded assembly of a surface electrode, wire, conductive layer, or electrode terminal and a resin member is bonded using the above-described method for manufacturing a bonded assembly.
• the bonded structure, semiconductor device, bonded structure manufacturing method, and semiconductor device manufacturing method disclosed herein provide sufficient adhesion reliability.
• the material for forming the primer layer 105 is not particularly limited, but any known primer can be used, such as a composition containing epoxy resin, acrylic resin, urethane resin, cyanoacrylate, silane coupling agent, synthetic rubber, amine, carboxyl, polyrotaxane, or other materials commonly used as primers. It is particularly preferable for the primer to contain polyrotaxane.
• polymers may be random copolymers or block copolymers, or may be modified.
• the bulky groups formed at both ends of the chain portion are not particularly limited as long as they prevent the cyclic molecule from detaching from the axial molecule. From the viewpoint of bulkiness, examples include adamantyl groups, trityl groups, fluoresceinyl groups, dinitrophenyl groups, and pyrenyl groups.
• the cyclic molecule may have a ring large enough to encapsulate the axial molecule. Examples of such rings include cyclodextrin rings, crown ether rings, benzocrown rings, dibenzocrown rings, and dicyclohexanocrown rings.
• the polyrotaxane prefferably has carboxylic acid groups, aldehyde groups, or both as functional groups. Because carboxylic acid and aldehyde groups are highly reactive, they are expected to interact strongly with the metal member 101 and the resin member 102, improving adhesion.
• the primer may be diluted with a volatile solvent, and examples of diluting solvents include acetone, methyl ethyl ketone, toluene, cyclohexane, ethanol, methanol, propanol, and 2-butanone.
• the metal member 101 may be subjected to a surface treatment before applying the primer. Types of surface treatment for the metal member 101 include solvent degreasing, water washing degreasing, polishing, ultraviolet treatment, corona treatment, and flame treatment.
• step S2 the surface of the metal member 101 is irradiated with a laser L, thereby forming recesses 103 and protrusions 104 on the joining surface 106 of the metal member 101.
• the primer layer 105 is heated by the thermal effect of the laser L, and the metal member 101 and primer layer 105 are firmly adhered to each other.
• the metal member 101 melts or vaporizes due to ablation, forming recesses 103.
• the primer layer 105 also partially evaporates, so the primer layer in the recesses 103 is less than the primer layer 105 in the protrusions 104.
• the laser L is preferably a pulsed laser to avoid deformation of the metal member 101.
• the wavelength of the pulsed laser is not particularly limited, but examples of wavelengths suitable for metal processing include wavelengths of 200 nm or more and 10,000 nm or less, and more preferably wavelengths of 400 nm or more and 2,000 nm or less. If necessary, the laser L may be irradiated in a gas atmosphere such as N 2 , Ar, or He.
• the area ratio (X/Y) of the area X of the convex portion 104 to the area Y of the concave portion 103, and the depth of the concave portion 103, can be controlled by changing the energy of the pulse laser, the number of scans, and the spacing between the spots of the laser L.
• the primer layer 105 formed in the recess 103 is not essential, and the configuration may be such that the primer layer 105 is not formed in the recess 103 by irradiating the laser L.
• the resin member 102 was made of Mitsui Chemicals' two-component epoxy adhesive EH456, and the metal member 101 was made of A5052 material. After cleaning the A5052 material with acetone, a primer solution was applied. After the solvent was evaporated, laser processing was performed using an Omron Corporation MX-Z2000H (wavelength: 1,062 nm, laser L spot diameter: approximately 45 ⁇ m).
• the area ratio (X/Y) of the area X of the convex portion 104 to the area Y of the concave portion 103 and the depth of the concave portion 103 were controlled by changing the energy of the pulse laser, the number of scans, and the spacing between the spots of the laser L.
• the area ratio (X/Y) of the area X of the convex portion 104 to the area Y of the concave portion 103 and the depth of the concave portion 103 were measured using a laser microscope. EH456 was applied to the obtained metal members, and they were bonded to produce a bonded body. In Comparative Example 1, no primer was used and no laser treatment was performed.
• Adhesive strength was measured using a shear tensile test in accordance with JIS K 6850, with strengths of 5 MPa or less being rated as ⁇ , 5 MPa to 8 MPa being ⁇ , 8 MPa to 12 MPa being ⁇ , and 12 MPa or higher being ⁇ .
• FIG. 5 is a cross-sectional view of a semiconductor device according to a second embodiment of the present invention.
• the semiconductor device 200 includes a semiconductor element 201 , wires 202 A and 202 B, an electrode terminal 203 , a resin member 204 , an insulating substrate 207 , a conductive layer 208 , and a surface electrode 210 .
• the semiconductor element 201 is mounted on one side in the thickness direction of the insulating substrate 207 (hereinafter referred to as “one side in the thickness direction”).
• the other side in the thickness direction of the insulating substrate 207 (hereinafter referred to as “the other side in the thickness direction"), which is opposite to the surface on which the semiconductor element 201 is mounted, is bonded to the heat spreader 209.
• a conductive layer 208 made of a metal member is provided on the surface of the insulating substrate 207.
• the semiconductor element 201 is joined to the conductive layer 208 with solder 206.
• the semiconductor element 201 has an insulated gate bipolar transistor (IGBT) or diode (Di) formed on a semiconductor substrate made of, for example, silicon (Si), silicon carbide (SiC), or gallium nitride (GaN).
• the semiconductor element 201 is not limited to the above configuration and may be, for example, an insulated gate field effect transistor (MOSFET) or a high electron mobility transistor (HEMT). Furthermore, the semiconductor element 201 may be made up of multiple elements, or multiple types of semiconductor elements may be mounted.
• MOSFET insulated gate field effect transistor
• HEMT high electron mobility transistor
• An electrode terminal 203 made of a metal material is attached to the resin case 205.
• a surface electrode 210 is provided on one side of the semiconductor element 201 in the thickness direction.
• the surface electrode 210 is also made of a metal material.
• the electrode terminal 203 and the surface electrode 210 are electrically connected by a wire 202A.
• the wire 202A connects the electrode terminal 203 and the surface electrode 210 by wire bonding.
• the electrode terminal 203 and the conductive layer 208 are electrically connected by a wire 202B.
• the wire 202B connects the electrode terminal 203 and the conductive layer 208 by wire bonding.
• the wire 202A and the wire 202B are wires made of a conductive metal material such as Au or Al.
• wire 202A, wire 202B, surface electrode 210, electrode terminal 203, and conductive layer 208 have recesses 103 and protrusions 104 shown in Figures 1 and 4 on at least a portion of their surfaces.
• a primer layer 105 is formed on the protrusions 104, and a smaller amount of primer layer 105 is formed on the recesses 103 than on the protrusions 104.
• the locations where wire 202A and electrode terminal 203 are electrically connected, the locations where wire 202A and surface electrode 210 are electrically connected, the locations where wire 202B and electrode terminal 203 are electrically connected, and the locations where wire 202B and conductive layer 208 are electrically connected may or may not have recesses 103, protrusions 104, and primer layers 105 formed. Even if recesses 103, protrusions 104, and primer layers 105 are formed in the above-mentioned electrically connected locations, electrical connection can be ensured in recesses 103 where there is less primer layer 105.
• the semiconductor device 200 is sealed with a resin member 204 as a sealing resin.
• a resin member 204 as a sealing resin.
• the surface electrode 210, wire 202A, wire 202B, conductive layer 208, and electrode terminal 203 are firmly bonded to the resin member 204 due to the anchor effect and the primer effect of the protrusion 104, resulting in a semiconductor device 200 with a resin seal that has long-term durability.
• the method for manufacturing semiconductor device 200 according to embodiment 2 is a method for manufacturing semiconductor device 200 in which surface electrode 210, wire 202A, wire 202B, conductive layer 208, or electrode terminal 203 are sealed with resin member 204, and at least a portion of the bonded body of surface electrode 210, wire 202A, wire 202B, conductive layer 208, or electrode terminal 203 and resin member 204 is bonded by the method for manufacturing a bonded body according to embodiment 1. This will be described in detail below.
• an insulating substrate 207 is prepared.
• the surface of the insulating substrate 207 is provided with a conductive layer 208 formed from a metal member.
• the semiconductor element 201 is placed on the conductive layer 208 via solder 206, and the semiconductor element 201 is bonded to the conductive layer 208 by a reflow process. This electrically connects the semiconductor element 201 and the conductive layer 208.
• the semiconductor element 201 may have recesses 103, protrusions 104, and a primer layer 105 formed in advance on the surface electrode 210, which is formed from a metal member.
• the recesses 103, protrusions 104, and primer layer 105 are formed by irradiating with a laser L.
• the thermal effect of the laser L heats the primer layer 105, firmly adhering the surface electrode 210 and primer layer 105.
• the surface electrode 210 melts or vaporizes due to ablation, forming recesses 103.
• the primer layer 105 also partially evaporates, so the primer layer in the recesses 103 is less than the primer layer in the protrusions 104.
• the laser L is preferably a pulsed laser to avoid deformation of the surface electrode 210.
• the wavelength of the pulsed laser is not particularly limited, but examples of wavelengths suitable for metal processing include wavelengths of 200 nm or more and 10,000 nm or less, and more preferably wavelengths of 400 nm or more and 2,000 nm or less. If necessary, the laser L may be irradiated in a gas atmosphere such as N 2 , Ar, or He.
• the area ratio (X/Y) of the area X of the convex portions 104 to the area Y of the concave portions 103, and the depth of the concave portions 103, can be controlled by changing the energy of the pulsed laser, the number of scans, and the spacing between the spots of the laser L.
• the conductive layer 208 may be irradiated with laser L after a primer is applied, thereby forming the concave portions 103, the convex portions 104, and the primer layer 105 on the surface of the conductive layer 208.
• electrode terminal 203 formed from a metal member and semiconductor element 201 are electrically connected by wire 202A formed from a metal member.
• Wire 202A is bonded to electrode terminal 203 and semiconductor element 201, for example, by a wire bonding device.
• electrode terminal 203 and conductive layer 208 are electrically connected by wire 202B, for example, by a wire bonding device.
• wire 202A and wire 202B may be irradiated with laser L after applying primer, so that recesses 103, protrusions 104, and primer layer 105 are formed in advance on the surfaces of wire 202A and wire 202B, respectively.
• a primer may be applied to at least a portion of the surface electrode 210, conductive layer 208, electrode terminal 203, wire 202A, and wire 202B, followed by irradiation with laser L, thereby forming recesses 103, protrusions 104, and primer layer 105, thereby producing the semiconductor device 200.
• the present disclosure is not limited to application to the semiconductor devices described above, but is a technology that can be widely applied to fields where resin-metal bonding is used.
• resin-metal bonding can be applied to vehicle parts, electric railway parts, elevator parts, aircraft parts, satellite parts, optical communication parts, industrial robot parts, generator parts, air conditioning/refrigeration equipment parts, and home appliance parts.
• Bonding body 101: Metal member, 102: Resin member, 103: Recess, 104: Protrusion, 105: Primer layer, 106: Bonding surface, 200: Semiconductor device, 201: Semiconductor element, 202A, 202B: Wire, 203: Electrode terminal, 204: Resin member, 208: Conductive layer, 210: Surface electrode

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