WO2025001501A1 - 晶圆清洗装置 - Google Patents

晶圆清洗装置 Download PDF

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Publication number
WO2025001501A1
WO2025001501A1 PCT/CN2024/091231 CN2024091231W WO2025001501A1 WO 2025001501 A1 WO2025001501 A1 WO 2025001501A1 CN 2024091231 W CN2024091231 W CN 2024091231W WO 2025001501 A1 WO2025001501 A1 WO 2025001501A1
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WO
WIPO (PCT)
Prior art keywords
tank
spm solution
cleaning
spm
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2024/091231
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English (en)
French (fr)
Inventor
徐融
王俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Acm Research Lingang Inc
ACM Research Shanghai Inc
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Acm Research Lingang Inc
ACM Research Shanghai Inc
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Filing date
Publication date
Application filed by Acm Research Lingang Inc, ACM Research Shanghai Inc filed Critical Acm Research Lingang Inc
Priority to KR1020267003185A priority Critical patent/KR20260033566A/ko
Publication of WO2025001501A1 publication Critical patent/WO2025001501A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/007—Heating the liquid

Definitions

  • the present application relates to the field of wafer cleaning, and in particular to a wafer cleaning device.
  • Existing wafer cleaning equipment includes single-wafer SPM (a mixed solution of sulfuric acid and hydrogen peroxide) cleaning equipment and tank-type SPM cleaning equipment. Since the single-wafer SPM cleaning equipment cannot meet most processes after sulfuric acid and hydrogen peroxide are mixed and diluted and recycled, the amount of sulfuric acid consumed is much greater than that of the tank-type equipment. The single-wafer SPM cleaning equipment consumes a lot of SPM, while the tank-type SPM cleaning equipment consumes less SPM. In terms of particle removal, the tank-type SPM cleaning equipment is inferior to the single-wafer SPM cleaning equipment, and more small particles are added. Generally speaking, the tank-type SPM cleaning equipment is suitable for the removal of particles larger than 60nm, and the single-wafer SPM cleaning equipment is suitable for the removal of particles below 40nm.
  • SPM a mixed solution of sulfuric acid and hydrogen peroxide
  • the cleaning equipment that combines tank type and single-wafer cleaning can save more SPM solution than single-wafer SPM cleaning equipment while ensuring the ability to remove particles below 40nm.
  • the current tank type or tank type and single-wafer SPM cleaning equipment can no longer save SPM solution further.
  • An embodiment of the present application provides a wafer cleaning device that can further save sulfuric acid.
  • a first cleaning tank used for storing the SPM solution and for performing a first cleaning on the wafer
  • a second cleaning tank used for storing the SPM solution and for performing a second cleaning on the wafer
  • a storage tank used for storing the SPM solution discharged from the second cleaning tank after the second cleaning tank cleans the wafer for the second time
  • a first heater used to heat the SPM solution in the storage tank to a preset temperature range
  • the controller is used to control the storage device when the first cleaning tank is replaced with the SPM solution.
  • the tank transports the SPM solution heated to the preset temperature range by the first heater to the first cleaning tank.
  • the wafer cleaning device also includes a concentration detector for detecting the concentration of the SPM solution in the storage tank and sending it to the controller when the SPM solution is replaced in the first cleaning tank; the controller is used to compare the concentration of the SPM solution in the storage tank with a preset concentration, and when the concentration of the SPM solution in the storage tank is not less than the preset concentration, control the storage tank to transport the SPM solution heated to the preset temperature range by the first heater to the first cleaning tank.
  • the controller when the controller detects that the concentration of the SPM solution in the storage tank is less than the preset concentration, the controller controls the storage tank to discharge the SPM solution in the storage tank.
  • the wafer cleaning device also includes a first connecting pipe, the first cleaning tank includes a first inner tank and a first outer tank, the first inner tank is used to store SPM solution, and the first outer tank is used to store SPM solution overflowing from the first inner tank; wherein the first connecting pipe connects the first inner tank and the first outer tank.
  • a first buffer tank and a second heater are provided on the first connecting pipeline, the first buffer tank is connected to the first outer tank, the first buffer tank is also connected to the first inner tank, and the second heater is provided on the first connecting pipeline between the first buffer tank and the first inner tank.
  • a first filter is further provided on the first connecting pipeline, and the first filter is provided between the first buffer tank and the second heater.
  • the wafer cleaning device also includes a second connecting pipe, the second cleaning tank includes a second inner tank and a second outer tank, the second inner tank is used to store SPM solution, and the second outer tank is used to store SPM solution overflowing from the second inner tank; wherein the second connecting pipe connects the second inner tank and the second outer tank.
  • a second buffer tank and a third heater are provided on the second connecting pipeline, the second buffer tank is connected to the second outer tank, the second buffer tank is also connected to the second inner tank, and the third heater is provided on the second connecting pipeline between the second buffer tank and the second inner tank.
  • a second filter is further provided on the second connecting pipeline, and the second filter is provided between the second buffer tank and the third heater.
  • the invention further comprises at least one filter disposed in the first heater and between the storage slot.
  • the wafer cleaning device provided in the embodiment of the present application adopts a storage tank to store the SPM solution discharged from the second cleaning tank, and when the SPM solution is replaced in the first cleaning tank, the controller controls the storage tank to transport the SPM solution heated to a preset temperature range by the first heater to the first cleaning tank.
  • FIG1 is a structural block diagram of a wafer cleaning device according to an embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of a wafer cleaning device according to an embodiment of the present application.
  • connection is not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. or indirectly.
  • the “multiple” involved in this application means greater than or equal to two.
  • “And/or” describes the association relationship of associated objects, indicating that three relationships may exist. For example, “A and/or B” can mean: A exists alone, A and B exist at the same time, and B exists alone.
  • the terms “first”, “second”, “third”, etc. involved in this application are merely used to distinguish similar objects and do not represent a specific ordering of objects.
  • FIG. 1 is a structural block diagram of a wafer cleaning device according to an embodiment of the present application.
  • the wafer cleaning device includes a first cleaning tank 10, a second cleaning tank 20, a storage tank 30, a first heater 40, and a controller 50.
  • the first cleaning tank 10 is used to store an SPM solution and is used to perform a first cleaning of the wafer.
  • the second cleaning tank 20 is used to store an SPM solution and is used to perform a second cleaning of the wafer.
  • the storage tank 30 is used to store the SPM solution discharged from the second cleaning tank 20.
  • the first heater 40 is used to heat the SPM solution in the storage tank 30 to a preset temperature range.
  • the controller 50 controls the storage tank 30 to transport the SPM solution heated to a preset temperature range by the first heater 40 to the first cleaning tank 10.
  • the cleaning equipment is usually equipped with two SPM tanks, wherein the first cleaning tank is used for the first cleaning of the wafer, so its SPM solution concentration is relatively low, and the second cleaning tank is used for the second cleaning of the wafer, and the cleanliness of the wafer is higher than that of the first cleaning, so its consumption of SPM solution is less than that of the first cleaning, and its SPM solution concentration is relatively high.
  • the SPM solutions in the two cleaning tanks are all discharged, and new SPM solutions are replenished from the factory.
  • the present application provides a wafer cleaning device that discharges the SPM with a higher concentration in the second cleaning tank 20 into the storage tank 30, and the first cleaning tank 10 can supply the SPM in the storage tank 30 to the first cleaning tank 10 when performing the SPM solution replacement, thereby reducing the amount of SPM solution replenished from the factory, realizing the secondary utilization of the SPM solution with a higher concentration, and extending the use cycle, saving the amount of SPM solution used.
  • the SPM solution includes sulfuric acid and hydrogen peroxide.
  • the saving of SPM solution usage described in the embodiment of the present application can be understood as saving the usage of sulfuric acid in the SPM solution, as shown in Table 1 below, wherein the unit of sulfuric acid (H2SO4) in Table 1 is L, and the quantity in the table represents the number of wafers to be cleaned.
  • the wafer cleaning device provided in the present application can further save sulfuric acid in the SPM solution on the basis of the existing tank/tank and single-wafer cleaning equipment.
  • At least one filter may be disposed between the first heater 40 and the storage tank 30 to filter particles carried by the SPM solution discharged from the second cleaning tank 20 .
  • the SPM solution of the first cleaning tank 10 and the second cleaning tank 20 can be replaced synchronously, that is, when replacing the SPM solution, the solution is discharged synchronously first, the SPM solution in the first cleaning tank 10 is directly discharged, and the SPM solution in the second cleaning tank 20 is discharged into the storage tank 30, and when adding new SPM solution, the solution in the storage tank 30 is added to the first cleaning tank 10, and the new SPM solution is added to the second cleaning tank 20.
  • the synchronous replacement of the SPM solution improves the efficiency of replacing the SPM solution in the first cleaning tank 10 and the second cleaning tank 20.
  • the wafer cleaning device further includes a concentration detector.
  • the concentration detector detects the concentration of the SPM solution in the storage tank 30 and sends it to the controller 50.
  • the controller 50 compares the concentration of the SPM solution in the storage tank 30 with a preset concentration, and when the concentration of the SPM solution in the storage tank 30 is not less than the preset concentration, controls the storage tank 30 to transfer the SPM solution heated to a preset temperature range by the first heater 40 to the first cleaning tank 10.
  • the concentration detector is used to detect the concentration of the SPM solution in the storage tank 30 to avoid the concentration of the SPM solution in the storage tank 30 being too low, thereby affecting the cleaning effect of the first cleaning tank 10.
  • the preset concentration can be determined by the process requirements.
  • the concentration detector may detect the concentration of the SPM solution by detecting the concentration of sulfuric acid in the SPM solution to reflect the SPM solution.
  • the controller 50 when the controller 50 detects that the concentration of the SPM solution in the storage tank 30 is less than a preset concentration, the controller 50 controls the storage tank 30 to discharge the SPM solution.
  • the wafer cleaning device further includes a first connecting pipe.
  • the first cleaning tank 10 includes a first inner tank 11 and a first outer tank 12.
  • the first inner tank 11 is used to store the SPM solution
  • the first outer tank 12 is used to store the SPM solution overflowing from the first inner tank 11.
  • the first connecting pipe is used to In this embodiment, the first inner tank 11 and the first outer tank 12 are connected by the first connecting pipe, so that the fluidity of the liquid in the first cleaning tank 10 can be achieved, and the concentration of the solution at each position in the first cleaning tank 10 is ensured to be uniform, thereby achieving a better cleaning effect.
  • a first buffer tank 13 and a second heater 14 are provided on the first communicating pipeline, the first buffer tank 13 is communicated with the first outer tank 12, the first buffer tank 13 is also communicated with the first inner tank 11, and the second heater 14 is provided on the first communicating pipeline between the first buffer tank 13 and the first inner tank 11.
  • the SPM solution in the first outer tank 12 can be buffered, and by providing the second heater 14 on the first communicating pipeline, the circulating SPM solution can be heated, thereby improving the cleaning effect of the SPM solution.
  • providing the first buffer tank 13 can also facilitate the second heater 14 to heat the circulating SPM solution, thereby avoiding the SPM solution from flowing too fast in the first communicating pipeline, so that the SPM solution cannot be heated to the preset temperature range, thereby reducing the cleaning effect of the SPM solution.
  • one or more first filters 15 are also provided on the first connecting pipeline, and the first filter 15 is provided between the first buffer tank 13 and the second heater 14.
  • the circulating SPM solution is filtered by the first filter 15, so as to avoid the SPM solution carrying particles during the circulation process and affecting the subsequent cleaning effect of the wafer.
  • the first filter 15 can be provided on two pipelines respectively to improve the filtering efficiency of the circulating SPM.
  • the wafer cleaning device further includes a second connecting pipe.
  • the second cleaning tank 20 includes a second inner tank 21 and a second outer tank 22, the second inner tank 21 is used to store the SPM solution, and the second outer tank 22 is used to store the SPM solution overflowing from the second inner tank 21.
  • the second connecting pipe is used to connect the second inner tank 21 and the second outer tank 22.
  • the second inner tank 21 and the second outer tank 22 are connected by the second connecting pipe, so that the fluidity of the liquid in the second cleaning tank 20 can be achieved, and the concentration of the solution at each position in the second cleaning tank 20 is ensured to be uniform, thereby achieving a better cleaning effect.
  • a second buffer tank 23 and a third heater 24 are provided on the second communicating pipeline.
  • the second buffer tank 23 is communicated with the second outer tank 22.
  • the second buffer tank 23 is also communicated with the second inner tank 21.
  • the third heater 24 is provided on the second communicating pipeline between the second buffer tank 23 and the second inner tank 21.
  • the SPM solution in the second outer tank 22 can be buffered.
  • the third heater 24 on the second communicating pipeline the circulating SPM solution can be heated, thereby improving the cleaning effect of the SPM solution.
  • one or more second filters 25 are further provided on the second communicating pipeline, and the second filter 25 is provided between the second buffer tank 23 and the third heater 24.
  • the circulating SPM solution is filtered by the second filter 25, so as to prevent the SPM solution from carrying particles during the circulation process, thereby affecting the subsequent cleaning effect on the wafer.
  • the preset temperature range is 80° C. to 100° C. In this embodiment, by setting the preset temperature range to 80° C. to 100° C., the cleaning effect of the SPM solution can be improved.
  • a three-way valve 60 may be further provided on the second connecting pipeline to control the flow direction of the SPM solution.
  • the second cleaning tank 20 is connected to the storage 30 .
  • the second connecting pipeline is connected to allow the second cleaning tank 20 to circulate internally.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本申请涉及一种晶圆清洗装置。该晶圆清洗装置包括第一清洗槽、第二清洗槽、存储槽、第一加热器和控制器，并通过存储槽对第二清洗槽排放的SPM溶液进行存储，以及在第一清洗槽进行SPM溶液置换的情况下，通过控制器控制存储槽将经过第一加热器加热至预设温度区间的SPM溶液输送至第一清洗槽中的方式，解决了槽式或槽式与单片SPM清洗设备已经无法更进一步的节省SPM溶液的问题，实现了SPM溶液的再次利用，进一步的节省了SPM溶液。

Description

晶圆清洗装置 技术领域
本申请涉及晶圆清洗领域，特别是涉及晶圆清洗装置。
背景技术
现有的晶圆清洗设备包括单片SPM(硫酸和双氧水的混合溶液)清洗设备和槽式SPM清洗设备。单片SPM清洗设备由于硫酸和双氧水混合稀释后再次回收使用不能满足大部分工艺，耗硫酸量会远远大于槽式设备，单片SPM清洗设备对SPM消耗量大，槽式SPM清洗设备对SPM消耗量少。在去颗粒方面，槽式SPM清洗设备相比单片SPM清洗设备差，且小颗粒新增较多。通常而言，槽式SPM清洗设备适用于去除60nm以上颗粒的需求，单片SPM清洗设备适用去除40nm以下颗粒的需求。
槽式与单片清洗相结合的清洗设备，在确保40nm以下颗粒去除能力的同时，相比单片SPM清洗设备更能节省SPM溶液。但是随着工艺需求推进到去除26nm以下颗粒时，目前的槽式或槽式与单片SPM清洗设备已经无法更进一步的节省SPM溶液。
发明内容
本申请实施例提供了一种晶圆清洗装置，能进一步节省硫酸。
根据本申请实施例提供的晶圆清洗装置，包括：
第一清洗槽，用于存储SPM溶液，且用于对晶圆进行第一次清洗；
第二清洗槽，用于存储SPM溶液，且用于对晶圆进行第二次清洗；
存储槽，用于存储所述第二清洗槽对晶圆进行第二次清洗之后第二清洗槽排放的SPM溶液；
第一加热器，用于对所述存储槽中的SPM溶液加热至预设温度区间；
控制器，用于在所述第一清洗槽进行SPM溶液置换的情况下，控制所述存储 槽将经过所述第一加热器加热至所述预设温度区间的SPM溶液输送至所述第一清洗槽中。
在其中的一些实施例中，所述晶圆清洗装置还包括浓度检测器，用于在所述第一清洗槽进行SPM溶液置换的情况下，检测所述存储槽中的SPM溶液浓度且发送至所述控制器；所述控制器用于将所述存储槽中的SPM溶液浓度与一预设浓度进行比较，并在所述存储槽中的SPM溶液浓度不小于所述预设浓度的情况下，控制所述存储槽将经过所述第一加热器加热至所述预设温度区间的SPM溶液输送至所述第一清洗槽中。
在其中的一些实施例中，所述控制器在检测到所述存储槽中的SPM溶液浓度小于所述预设浓度的情况下，控制所述存储槽将存储槽中的SPM溶液排放掉。
在其中的一些实施例中，所述晶圆清洗装置还包括第一连通管路，所述第一清洗槽包括第一内槽和第一外槽，所述第一内槽用于存储SPM溶液，所述第一外槽用于存储所述第一内槽中溢出的SPM溶液；其中，所述第一连通管路连通所述第一内槽和所述第一外槽。
在其中的一些实施例中，所述第一连通管路上设置有第一缓冲槽和第二加热器，所述第一缓冲槽与所述第一外槽连通，所述第一缓冲槽还与所述第一内槽连通，在所述第一缓冲槽与所述第一内槽之间的第一连通管路上设置所述第二加热器。
在其中的一些实施例中，在所述第一连通管路上还设置有第一过滤器，所述第一过滤器设置在所述第一缓冲槽和所述第二加热器之间。
在其中的一些实施例中，所述晶圆清洗装置还包括第二连通管路，所述第二清洗槽包括第二内槽和第二外槽，所述第二内槽用于存储SPM溶液，所述第二外槽用于存储从所述第二内槽中溢出的SPM溶液；其中，所述第二连通管路连通所述第二内槽和所述第二外槽。
在其中的一些实施例中，所述第二连通管路上设置有第二缓冲槽和第三加热器，所述第二缓冲槽与所述第二外槽连通，所述第二缓冲槽还与所述第二内槽连通，在所述第二缓冲槽与所述第二内槽之间的第二连通管路上设置所述第三加热器。
在其中的一些实施例中，在所述第二连通管路上还设置有第二过滤器，所述第二过滤器设置在所述第二缓冲槽和所述第三加热器之间。
在其中的一些实施例中，进一步包括至少一个过滤器，设置在所述第一加热器 与所述存储槽之间。
综上所述，本申请实施例提供的晶圆清洗装置通过采用存储槽对第二清洗槽排放的SPM溶液进行存储，以及在第一清洗槽进行SPM溶液置换的情况下，通过控制器控制存储槽将经过第一加热器加热至预设温度区间的SPM溶液输送至第一清洗槽中的方式，解决了槽式或槽式与单片SPM清洗设备已经无法更进一步的节省SPM溶液的问题，实现了SPM溶液的再次利用，进一步的节省了SPM溶液。
本申请的一个或多个实施例的细节在以下附图和描述中提出，以使本申请的其他特征、目的和优点更加简明易懂。
附图概述
本发明的特征、性能由以下的实施例及其附图进一步描述。
图1是根据本申请实施例的晶圆清洗装置的结构框图；
图2是根据本申请实施例的晶圆清洗装置的结构示意图。
本发明的较佳实施方式
为了使本申请的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本申请进行描述和说明。应当理解，此处所描述的具体实施例仅仅用以解释本申请，并不用于限定本申请。基于本申请提供的实施例，本领域普通技术人员在没有作出创造性劳动的前提下所获得的所有其他实施例，都属于本申请保护的范围。
除非另作定义，本申请所涉及的技术术语或者科学术语应当为本申请所属技术领域内具有一般技能的人士所理解的通常意义。本申请所涉及的“一”、“一个”、“一种”、“该”等类似词语并不表示数量限制，可表示单数或复数。本申请所涉及的术语“包括”、“包含”、“具有”以及它们任何变形，意图在于覆盖不排他的包含；例如包含了一系列步骤或模块(单元)的过程、方法、系统、产品或设备没有限定于已列出的步骤或单元，而是可以还包括没有列出的步骤或单元，或可以还包括对于这些过程、方法、产品或设备固有的其它步骤或单元。本申请所涉及的“连接”、“相连”、“耦接”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电气的连接，不管是直接 的还是间接的。本申请所涉及的“多个”是指大于或者等于两个。“和/或”描述关联对象的关联关系，表示可以存在三种关系，例如，“A和/或B”可以表示：单独存在A，同时存在A和B，单独存在B这三种情况。本申请所涉及的术语“第一”、“第二”、“第三”等仅仅是区别类似的对象，不代表针对对象的特定排序。
本申请实施例提供了一种晶圆清洗装置。图1是根据本申请实施例的晶圆清洗装置的结构框图。如图1所示，晶圆清洗装置包括第一清洗槽10、第二清洗槽20、存储槽30、第一加热器40和控制器50。第一清洗槽10用于存储SPM溶液，且用于对晶圆进行第一次清洗。第二清洗槽20用于存储SPM溶液，且用于对晶圆进行第二次清洗。存储槽30用于对第二清洗槽20排放的SPM溶液进行存储。第一加热器40用于对存储槽30中的SPM溶液加热至预设温度区间。控制器50在第一清洗槽10进行SPM溶液置换的情况下，控制存储槽30将经过第一加热器40加热至预设温度区间的SPM溶液输送至第一清洗槽10中。
需要说明的是，清洗设备通常配置两个SPM槽，其中，第一个清洗槽用于对晶圆进行第一次清洗，因此其SPM溶液浓度相对较低，第二个清洗槽用于对晶圆进行第二次清洗，其晶圆的清洁程度相对第一次清洗高，因此其消耗SPM溶液相对第一次较少，其SPM溶液浓度相对也就较高，在现有技术中，在其中一个清洗槽到达SPM溶液置换周期或者处理晶圆的数量达到预设数量时，则将两个清洗槽中的SPM溶液全部排放，并再从厂务补充新的SPM溶液。而本申请提供的一种晶圆清洗装置，是将第二清洗槽20中的浓度较高的SPM排放到存储槽30中，第一清洗槽10在进行SPM溶液置换时可以将存储槽30中的SPM供应至第一清洗槽10，从而减少从厂务补充的SPM溶液的量，实现了浓度较高的SPM溶液的二次利用，并延长使用周期，节省了SPM溶液的使用量。
具体的，SPM溶液包括硫酸和双氧水，在本申请实施例中描述的节省SPM溶液使用量可以理解为节省SPM溶液中硫酸的使用量，如下表1，其中，表1中的硫酸(H2SO4)单位为L，表格中的数量代表清洗晶圆的数量。
表1硫酸使用量表

由表1可知，采用本申请中提供的晶圆清洗装置，可以在现有技术的槽式/槽式与单片清洗设备的基础上，更进一步节省了SPM溶液中的硫酸。
在其中的一些实施例中，还可以在第一加热器40与存储槽30之间设置至少一个过滤器，以便于过滤第二清洗槽20中排放的SPM溶液所携带的颗粒。
在一些实施例中，可以将第一清洗槽10和第二清洗槽20同步置换SPM溶液，即在置换SPM溶液时，先同步进行溶液排放，第一清洗槽10中的SPM溶液直接排放掉，第二清洗槽20中的SPM溶液排放至存储槽30中，并在添加新的SPM溶液时，将存储槽30中的溶液加入至第一清洗槽10中，第二清洗槽20中加入新的SPM溶液，SPM溶液的同步置换，提高了第一清洗槽10和第二清洗槽20置换SPM溶液的效率。
在其中的一些实施例中，晶圆清洗装置还包括浓度检测器，在第一清洗槽10进行SPM溶液置换的情况下，浓度检测器检测存储槽30中的SPM溶液浓度并发送至控制器50。控制器50将存储槽30中的SPM溶液浓度与一预设浓度进行比较，并在存储槽30中的SPM溶液浓度不小于该预设浓度的情况下，控制存储槽30将经过第一加热器40加热至预设温度区间的SPM溶液输送至第一清洗槽10中。通过浓度检测器对存储槽30中的SPM溶液浓度进行检测，避免存储槽30中的SPM溶液的浓度过低，而影响第一清洗槽10的清洗效果。预设浓度可以由工艺要求决定。
需要说明的是，浓度检测器检测SPM溶液浓度的方式可以为通过检测SPM溶液中硫酸的浓度来体现SPM溶液。
在其中的一些实施例中，控制器50在检测到存储槽30中的SPM溶液浓度小于预设浓度的情况下，控制器50控制存储槽30将SPM溶液排放掉。
参见图2，在其中的一些实施例中，晶圆清洗装置还包括第一连通管路。第一清洗槽10包括第一内槽11和第一外槽12，第一内槽11用于存储SPM溶液，第一外槽12用于存储从第一内槽11溢出的SPM溶液。第一连通管路用 于连通第一内槽11和第一外槽12。在本实施例中，通过第一连通管路将第一内槽11和第一外槽12连通，可以实现第一清洗槽10中液体的流通性，保证第一清洗槽10中各个位置的溶液浓度均匀，从而达到更好的清洗效果。
继续参见图2，在第一连通管路上设置第一缓冲槽13和第二加热器14，第一缓冲槽13与第一外槽12连通，第一缓冲槽13还与第一内槽11连通，在第一缓冲槽13与第一内槽11之间的第一连通管路上设置第二加热器14。在本实施例中，通过在第一连通管路上设置第一缓冲槽13，可以对第一外槽12中的SPM溶液进行缓冲，通过在第一连通管路上设置第二加热器14，可以实现对流通的SPM溶液进行加热，从而提高SPM溶液的清洗效果，同时设置第一缓冲槽13还可以便于第二加热器14对流通的SPM溶液进行加热，避免SPM溶液在第一连通管路上流速过快，使得SPM溶液无法加热至预设温度区间，从而导致SPM溶液的清洗效果降低。
如图2所示，在第一连通管路上还设置有一个或多个第一过滤器15，第一过滤器15设置在第一缓冲槽13和第二加热器14之间。在本实施例中，通过第一过滤器15对流通中的SPM溶液进行过滤，避免了SPM溶液在流通过程中携带颗粒而影响后续对晶圆的清洗效果。第一过滤器15可以分别设置在两个管路上，以提高对流通的SPM的过滤效率。
参见图2，晶圆清洗装置还包括第二连通管路。第二清洗槽20包括第二内槽21和第二外槽22，第二内槽21用于存储SPM溶液，第二外槽22用于存储从第二内槽21溢出的SPM溶液。第二连通管路用于连通第二内槽21和第二外槽22。在本实施例中，通过第二连通管路将第二内槽21和第二外槽22连通，可以实现第二清洗槽20中的液体的流通性，保证第二清洗槽20中各个位置的溶液浓度均匀，从而达到更好的清洗效果。
参见图2，在第二连通管路上设置第二缓冲槽23和第三加热器24，第二缓冲槽23与第二外槽22连通，第二缓冲槽23还与第二内槽21连通，在第二缓冲槽23与第二内槽21之间的第二连通管路上设置第三加热器24。在本实施例中，通过在第二连通管路上设置第二缓冲槽23，可以实现对第二外槽22中的SPM溶液进行缓冲，通过在第二连通管路上设置第三加热器24，可以实现对流通的SPM溶液进行加热，从而提高SPM溶液的清洗效果，同时设置第二 缓冲槽23还可以便于第三加热器24对流通的SPM溶液进行加热，避免SPM溶液在第二连通管路上流速过快，使得SPM溶液无法加热至预设温度区间，从而导致SPM溶液的清洗效果降低。
参见图2，在第二连通管路上还设置有一个或多个第二过滤器25，第二过滤器25设置在第二缓冲槽23和第三加热器24之间。在本实施例中，通过第二过滤器25对流通中的SPM溶液进行过滤，可以避免SPM溶液在流通过程中携带颗粒，而影响后续对晶圆的清洗效果。
在其中的一些实施例中，预设温度区间为80℃至100℃。在本实施例中，通过将预设温度区间设置在80℃至100℃，可以提高SPM溶液的清洗效果。
继续参见图2，还可以在第二连通管路上设置一个三通阀60，以用来控制SPM溶液的流向，例如，在置换SPM溶液时，将第二清洗槽20与存储30连通，在未置换SPM溶液时，则连通第二连通管路，使第二清洗槽20进行内循环。
本领域的技术人员应该明白，以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (10)

  1. 一种晶圆清洗装置，其特征在于，包括：
    第一清洗槽，用于存储SPM溶液，且用于对晶圆进行第一次清洗；
    第二清洗槽，用于存储SPM溶液，且用于对晶圆进行第二次清洗；
    存储槽，用于存储所述第二清洗槽对晶圆进行第二次清洗之后第二清洗槽排放的SPM溶液；
    第一加热器，用于对所述存储槽中的SPM溶液加热至预设温度区间；
    控制器，用于在所述第一清洗槽进行SPM溶液置换的情况下，控制所述存储槽将经过所述第一加热器加热至所述预设温度区间的SPM溶液输送至所述第一清洗槽中。
  2. 根据权利要求1所述的晶圆清洗装置，其特征在于，所述晶圆清洗装置还包括浓度检测器，用于在所述第一清洗槽进行SPM溶液置换的情况下，检测所述存储槽中的SPM溶液浓度且发送至所述控制器；所述控制器用于将所述存储槽中的SPM溶液浓度与一预设浓度进行比较，并在所述存储槽中的SPM溶液浓度不小于所述预设浓度的情况下，控制所述存储槽将经过所述第一加热器加热至所述预设温度区间的SPM溶液输送至所述第一清洗槽中。
  3. 根据权利要求2所述的晶圆清洗装置，其特征在于，所述控制器在检测到所述存储槽中的SPM溶液浓度小于所述预设浓度的情况下，控制所述存储槽将存储槽中的SPM溶液排放掉。
  4. 根据权利要求1所述的晶圆清洗装置，其特征在于，所述晶圆清洗装置还包括第一连通管路，所述第一清洗槽包括第一内槽和第一外槽，所述第一内槽用于存储SPM溶液，所述第一外槽用于存储所述第一内槽中溢出的SPM溶液；其中，所述第一连通管路连通所述第一内槽和所述第一外槽。
  5. 根据权利要求4所述的晶圆清洗装置，其特征在于，所述第一连通管路上设置有第一缓冲槽和第二加热器，所述第一缓冲槽与所述第一外槽连通，所述第一缓冲槽还与所述第一内槽连通，在所述第一缓冲槽与所述第一内槽之间的第一连通管路上设置所述第二加热器。
  6. 根据权利要求5所述的晶圆清洗装置，其特征在于，所述第一连通管路上还设置有第一过滤器，所述第一过滤器设置在所述第一缓冲槽和所述第二加热器之 间。
  7. 根据权利要求1所述的晶圆清洗装置，其特征在于，所述晶圆清洗装置还包括第二连通管路，所述第二清洗槽包括第二内槽和第二外槽，所述第二内槽用于存储SPM溶液，所述第二外槽用于存储所述第二内槽中溢出的SPM溶液；其中，所述第二连通管路连通所述第二内槽和所述第二外槽。
  8. 根据权利要求7所述的晶圆清洗装置，其特征在于，所述第二连通管路上设置有第二缓冲槽和第三加热器，所述第二缓冲槽与所述第二外槽连通，所述第二缓冲槽还与所述第二内槽连通，在所述第二缓冲槽与所述第二内槽之间的第二连通管路上设置所述第三加热器。
  9. 根据权利要求8所述的晶圆清洗装置，其特征在于，所述第二连通管路上还设置有第二过滤器，所述第二过滤器设置在所述第二缓冲槽和所述第三加热器之间。
  10. 根据权利要求1所述的晶圆清洗装置，其特征在于，进一步包括至少一个过滤器，设置在所述第一加热器与所述存储槽之间。
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