WO2024106052A1 - 半導体試験装置、半導体試験方法および半導体装置の製造方法 - Google Patents

半導体試験装置、半導体試験方法および半導体装置の製造方法 Download PDF

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WO2024106052A1
WO2024106052A1 PCT/JP2023/036242 JP2023036242W WO2024106052A1 WO 2024106052 A1 WO2024106052 A1 WO 2024106052A1 JP 2023036242 W JP2023036242 W JP 2023036242W WO 2024106052 A1 WO2024106052 A1 WO 2024106052A1
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semiconductor
constant current
electrode
semiconductor elements
electrodes
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PCT/JP2023/036242
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English (en)
French (fr)
Japanese (ja)
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学 中西
和起 上野
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三菱電機株式会社
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Priority to JP2024558685A priority Critical patent/JPWO2024106052A1/ja
Priority to CN202380077502.1A priority patent/CN120188268A/zh
Publication of WO2024106052A1 publication Critical patent/WO2024106052A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

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  • This disclosure relates to a semiconductor testing device, a semiconductor testing method, and a method for manufacturing a semiconductor device.
  • Characteristic tests include tests such as applying high voltages or large currents to the semiconductor elements, as well as screening.
  • Characteristic tests include tests performed in module form and tests performed in semiconductor element form. To reduce manufacturing costs, it is preferable to perform characteristic tests in wafer form. However, there is a problem in that the reproducibility of measurement results is low due to electrical resistance that changes depending on the state of contact between the test stage on which the wafer is placed and the back surface of the wafer, and differences in resistance in the path from the test stage to the measurement point.
  • Patent Document 1 discloses a method for testing semiconductor transistors that reduces the contact resistance between the test stage and the back surface of the wafer.
  • the density of suction holes provided in the test stage is set to 100 holes/ cm2 or more, thereby reducing the contact resistance between the test stage and the wafer back electrode. This reduces the problem of low reproducibility of measurements.
  • test method described in Patent Document 1 has the problem that the effect of differences in resistance in the path to the measurement point on the test stage cannot be eliminated, resulting in variation in measurement error within the wafer surface. Furthermore, the test method described in Patent Document 1 cannot measure multiple chips simultaneously.
  • the objective of this disclosure is therefore to provide a semiconductor testing apparatus, a semiconductor testing method, and a method for manufacturing a semiconductor device that can simultaneously measure multiple chips in tests performed on semiconductor elements in the wafer state and reduce the variation in measurement error within the wafer surface.
  • the semiconductor testing apparatus disclosed herein has a positive electrode on its back surface and a negative electrode and a control electrode on its front surface, and is for simultaneously testing the characteristics of N (N is a natural number of 2 or more) semiconductor elements that turn on or off depending on a control signal input to the control electrode, and includes a test stage that fixes a wafer on which multiple semiconductor elements are arranged and has a positive electrode that is electrically connected to the positive electrodes of the multiple semiconductor elements, N (N is a natural number of 2 or more) first constant current sources, and M (M is a natural number of 2 or more) negative electrodes each having a negative electrode connected to the positive electrodes of the N first constant current sources.
  • the test stage includes a second constant current source or M variable resistors, N first probes each connecting a corresponding negative electrode of one of the N semiconductor elements and a corresponding negative electrode of the N first constant current sources, M electrodes each arranged on the periphery of the test stage, connected to a corresponding positive electrode of one of the M second constant current sources or the M variable resistors, and functioning as a current supply point, at least one collector sense terminal arranged on the periphery of the test stage, and a voltage measurement unit that measures the voltage between the collector sense terminal and each of the negative electrodes of the N semiconductor elements.
  • Each of the M second constant current sources or each of the M variable resistors passes a current that is 1/M of the sum of the currents of the N first constant current sources.
  • the semiconductor testing method disclosed herein is a semiconductor testing method using a semiconductor testing device for simultaneously testing the characteristics of N (N is a natural number of 2 or more) semiconductor elements that have a positive electrode on the back surface and a negative electrode and a control electrode on the front surface and turn on or off according to a control signal input to the control electrode.
  • the semiconductor testing device includes a test stage that serves as a positive electrode, N (N is a natural number of 2 or more) first constant current sources, M (M is a natural number of 2 or more) second constant current sources or M variable resistors, each having a negative electrode connected to the positive electrode of the N first constant current sources, M electrodes that are arranged on the periphery of the test stage, each connected to a corresponding one of the positive electrodes of the M second constant current sources or the M variable resistors, and functioning as a current supply point, at least one collector sense terminal arranged on the periphery of the test stage, a first probe, a second probe, and a voltage measurement unit.
  • the semiconductor testing method includes the steps of fixing a wafer on which multiple semiconductor elements are arranged to a test stage and connecting the positive electrodes of the multiple semiconductor elements to the test stage, connecting each of the N first probes to a corresponding negative electrode of one of the N semiconductor elements and a corresponding negative electrode of one of the N first constant current sources, connecting each of the N second probes to a corresponding control electrode of one of the N semiconductor elements and a drive circuit, starting the supply of constant current from the N first constant current sources, starting the supply of a current that is 1/M of the sum of the currents of the N first constant current sources from each of the M second constant current sources or each of the M variable resistors, and measuring the voltage between the collector sense terminal and each of the negative electrodes of the N semiconductor elements by a voltage measuring unit.
  • the manufacturing method of the semiconductor device disclosed herein includes the steps of manufacturing semiconductor elements by a wafer process, testing the manufactured wafers, and commercializing the semiconductor elements that pass the test.
  • the step of testing the wafers uses the semiconductor testing method described above.
  • FIG. 1 is a diagram showing a configuration of a semiconductor test device according to a first embodiment
  • 2 is a simplified diagram of a path related to saturation voltage measurement of a semiconductor element 27 in the first embodiment.
  • FIG. 2 is a simplified diagram of a path related to saturation voltage measurement of a semiconductor element 26 in the first embodiment.
  • FIG. 4 is a flowchart showing a procedure for a saturation voltage test of a semiconductor element in the first embodiment.
  • FIG. 11 is a diagram showing a configuration of a semiconductor test device according to a second embodiment.
  • FIG. 11 is a diagram showing a configuration of a semiconductor test device according to a third embodiment.
  • 13 is a flowchart showing a procedure for a saturation voltage test of a semiconductor element in the third embodiment.
  • FIG. 13 is a diagram showing a configuration of a semiconductor testing device according to a fourth embodiment.
  • 13 is a simplified diagram of a path related to saturation voltage measurement of a semiconductor element 27 in the fourth embodiment.
  • FIG. FIG. 13 is a simplified diagram of a path related to saturation voltage measurement of a semiconductor element 26 in the fourth embodiment.
  • 13 is a flowchart showing a procedure for measuring a saturation voltage according to the fourth embodiment.
  • FIG. 13 is a diagram showing a configuration of a semiconductor test device according to a fifth embodiment.
  • FIG. 13 is a diagram showing a configuration of a semiconductor test device according to a sixth embodiment.
  • 20 is a flowchart showing a procedure for measuring a saturation voltage according to the sixth embodiment.
  • 20 is a flowchart showing a method for manufacturing a semiconductor device according to a seventh embodiment.
  • Embodiment 1. 1 is a diagram showing the configuration of a semiconductor testing device according to embodiment 1.
  • a test of collector-emitter saturation voltage (hereinafter referred to as saturation voltage), which is a typical large current test, will be described as an example.
  • FIG. 1 shows only four each of the semiconductor elements 26a-26h and 27a-27h.
  • This semiconductor testing device includes a test stage 51, first probes 53a-53h, second probes 54a-54h, a drive circuit 55, first constant current sources 1a-1h, second constant current sources 2a, 2b, a first electrode 31, a second electrode 32, and a collector sense terminal 33.
  • the number of first probes 53a to 53h is the same as the number of semiconductor elements to be simultaneously measured, which is eight. In FIG. 1, only two are shown.
  • the number of second probes 54a to 54h is the same as the number of semiconductor elements to be simultaneously measured, which is eight. In FIG. 1, only one is shown.
  • Test stage 51 fixes wafer 63.
  • Multiple semiconductor elements are arranged on wafer 63. Any self-extinguishing semiconductor element can be used as the semiconductor element. All of the semiconductor elements arranged on wafer 63, or a portion of all the semiconductor elements, are sampled and inspected.
  • Semiconductor elements 27a-h and semiconductor elements 26a-h are representative of the multiple semiconductor elements arranged.
  • semiconductor elements 27a-h may be collectively referred to as semiconductor element 27, and semiconductor elements 26a-h may be collectively referred to as semiconductor element 26.
  • the first constant current sources 1a-1h may be collectively referred to as first constant current source 1
  • the second constant current sources 2a, 2b may be collectively referred to as second constant current source 2.
  • the first probes 53a-53h may be collectively referred to as first probe 53
  • the second probes 54a-54h may be collectively referred to as second probe 54.
  • Semiconductor elements 26 and 27 have a positive electrode on the back surface and a negative electrode and a control electrode on the front surface. Semiconductor elements 26 and 27 are turned on or off in response to a first control signal input from drive circuit 55 to the control electrode.
  • semiconductor elements 26 and 27 are MOSFETs (Metal Oxide Semiconductor Field Effect Transistors)
  • the positive electrode refers to the drain electrode
  • the negative electrode refers to the source electrode
  • the control electrode refers to the gate electrode.
  • semiconductor elements 26 and 27 are IGBTs (Insulated Gate Transistors)
  • the positive electrode refers to the collector electrode
  • the negative electrode refers to the emitter electrode
  • the control electrode refers to the gate electrode. In the following, an example will be described in which semiconductor elements 26 and 27 are IGBTs.
  • a current flows from the positive electrode on the back surface to the negative electrode on the front surface.
  • the negative electrodes on the front surfaces of the semiconductor elements 26a-h, 27a-h (emitters in the case of IGBTs) are electrically connected to the first constant current sources 1a-h by needle-shaped first probes 53a-h.
  • the control electrodes on the front surfaces of the semiconductor elements 26a-h, 27a-h (gates in the case of IGBTs) are electrically connected to the drive circuit 55 of the semiconductor testing device by needle-shaped second probes 54a-h.
  • Figure 1 shows a state in which the first probe 53 and the second probe 54 are connected to the semiconductor element 27 when the test object is the semiconductor element 27.
  • the positive electrodes (collectors in the case of IGBTs) on the backside of the semiconductor elements 26 and 27 are directly electrically connected to the test stage 51 (conductor) which also serves as the positive electrode.
  • the first constant current sources 1a to 1h and the second constant current sources 2a to 2b supply constant currents.
  • the negative electrodes of the second constant current sources 2a to 2b are connected to the positive electrodes of the first constant current sources 1a to 1h.
  • the second constant current source 2a passes a current that is 1/2 the sum of the currents of the first constant current sources 1a to 1h.
  • the second constant current source 2b passes a current that is 1/2 the sum of the currents of the first constant current sources 1a to 1h.
  • the first electrode 31 is arranged on the outer periphery of the test stage 51.
  • the first electrode 31 is connected to the positive electrode of the second constant current source 2a.
  • the first electrode 31 functions as a first current supply point to the test stage 51.
  • the second electrode 32 is arranged on the outer periphery of the test stage 51.
  • the second electrode 32 is connected to the positive electrode of the second constant current source 2b.
  • the first electrode 31 and the second electrode 32 are electrically connected to the positive electrodes on the back surfaces of the semiconductor elements 26 and 27.
  • the on-resistance (equivalent resistance) of semiconductor element 27a during the saturation voltage test is indicated by resistor 17a
  • the on-resistance (equivalent resistance) of semiconductor element 26a is indicated by resistor 16a.
  • the first electrode 31 and the second electrode 32 are arranged on the outer periphery of the test stage 51. It is desirable that the first electrode 31 and the second electrode 32 are arranged at equal angular intervals on the outer periphery of the test stage 51 (i.e., at positions point-symmetrical with respect to the center of the test stage 51).
  • the first probe 53a electrically connects the positive electrode of the second constant current source 2a to the negative electrode of the second constant current source 2a via the wiring resistor 10, the first electrode 31, the resistor 13, the semiconductor element 27a, and the first constant current source 1a.
  • the positive electrode of the second constant current source 2a is electrically connected to the negative electrode of the second constant current source 2a by the first probe 53a via the wiring resistor 10, the first electrode 31, the resistor 12, the semiconductor element 26a, and the first constant current source 1a.
  • the wiring resistance 10 is the resistance of the electrical wiring between the second constant current source 2a and the first electrode 31.
  • Resistance 13 is the sum of the resistance component of the path of the current that flows through the test stage 51 when power is supplied to the semiconductor element 27 through the first electrode 31, and the contact resistance between the test stage 51 and the positive electrode on the back surface of the semiconductor element 27.
  • the current flows over the shortest distance between the first electrode 31 and the semiconductor element 27. For example, if the test stage 51 is scratched, the current may not flow over the shortest path. The same applies to the resistance components from the other electrodes to the semiconductor element.
  • Resistance 12 is the sum of the resistance component of the path of the current that flows through the test stage 51 when power is supplied to the semiconductor element 26 through the first electrode 31, and the contact resistance between the test stage 51 and the positive electrode on the back surface of the semiconductor element 26.
  • the first probe 53a electrically connects the positive electrode of the second constant current source 2b to the negative electrode of the second constant current source 2b via the wiring resistor 11, the second electrode 32, the resistor 14, the semiconductor element 27a, and the first constant current source 1a.
  • the positive electrode of the second constant current source 2b is connected to the negative electrode of the second constant current source 2b by the first probe 53a via the wiring resistor 11, the second electrode 32, the resistor 15, the semiconductor element 26a, and the first constant current source 1a.
  • the wiring resistance 11 is the resistance of the electrical wiring between the second constant current source 2b and the second electrode 32.
  • Resistance 14 is the sum of the resistance component of the path of the current that flows through the test stage 51 when power is supplied to the semiconductor element 27 through the second electrode 32, and the contact resistance between the test stage 51 and the positive electrode on the back surface of the semiconductor element 27.
  • resistor 13 is different for semiconductor elements 27a and 27b. This is because the contact resistance with test stage 51 differs depending on the condition of the back surface of each semiconductor element, and the current path also differs. For simplicity, it is described as resistor 13, but there may be resistors 13a-h corresponding to semiconductor elements 27a-h. The same applies to resistors 12, 14, and 15.
  • the first probe 53a and the emitter electrode 127a of the semiconductor element 27a are electrically connected.
  • the voltage measurement unit 3 measures the voltage between the collector sense terminal 33 and the emitter electrodes 127a-h. It is preferable that the voltage measurement unit 3 has eight voltmeters in parallel so that eight voltages can be measured simultaneously. Alternatively, the voltage measurement unit 3 may be configured to measure the voltages between the collector sense terminal 33 and the emitter electrodes 127a-h of eight semiconductor elements by switching a switch. The latter configuration can reduce the price of the semiconductor testing equipment.
  • the second constant current source 2 and the voltage measuring unit 3 allow four-terminal measurement of the saturation voltage of the semiconductor element 27. Since only a small current flows between the collector sense terminal 33 and the first electrode 31, and the electrical resistance between the two conductors is also small, the collector sense terminal 33 and the first electrode 31 can be considered to be at the same potential.
  • the needle-shaped first probe 53 and the second probe 54 can be brought into electrical contact with any semiconductor element on the wafer 63.
  • the first constant current sources 1a to 1h pass a constant current through the semiconductor elements 26a to 26h or the semiconductor elements 27a to 27h.
  • the second constant current sources 2a to 2b pass a constant current through the semiconductor elements 26a to 26h or the semiconductor elements 27a to 27h.
  • the second constant current source 2a supplies a constant current that is 1/2 the sum of the currents of the first constant current sources 1a to h.
  • the second constant current source 2b supplies a constant current that is 1/2 the sum of the currents of the first constant current sources 1a to h.
  • the drive circuit 55 When measuring the saturation voltage of the semiconductor element 26a, the drive circuit 55 turns on the semiconductor element 26 by applying a voltage to the control electrode of the semiconductor element 26a through the second probe 54a.
  • the saturation voltage of the semiconductor element 26a can be measured by bringing the first probe 53a into contact with the emitter electrode 126a on the surface of the semiconductor element 26a and measuring the voltage between the collector sense terminal 33 and the emitter electrode 126a of the semiconductor element 26a with the voltage measuring unit 3.
  • the first electrode 31 and the second electrode 32 are located in point symmetry with respect to the center of the test stage 51. If the resistance of the test stage 51 is uniform, and the contact resistance between the positive electrode on the back surface of the semiconductor element and the test stage 51 is ignored, the magnitudes of the resistors 12, 13, 14, and 15 are proportional to the distance from the electrodes to the semiconductor element.
  • the value of resistor 13 and the value of resistor 15 will be the same, and the value of resistor 14 and the value of resistor 12 will be the same, so that the saturation voltage of the semiconductor element 26 and the saturation voltage of the semiconductor element 27 will be the same.
  • the variation in the measurement error of the saturation voltage caused by semiconductor test equipment such as resistor 13 can be reduced within the wafer 63 surface.
  • FIG. 2 is a simplified diagram of the path involved in measuring the saturation voltage of semiconductor element 27 in embodiment 1.
  • FIG. 3 is a simplified diagram of the path involved in measuring the saturation voltage of semiconductor element 26 in embodiment 1.
  • the positional relationship between the semiconductor element 27a and the semiconductor element 26a is point-symmetrical with respect to the center point of the test stage 51.
  • the positional relationship between the first electrode 31 and the second electrode 32 is point-symmetrical with respect to the center point of the test stage 51.
  • Wiring resistance 10 is 0.1 ⁇
  • wiring resistance 11 is 0.11 ⁇
  • resistance 12 is 0.001 ⁇
  • resistance 13 is 0.0005 ⁇
  • resistance 14 is 0.001 ⁇
  • resistance 15 is 0.0005 ⁇
  • resistances 16a-h are 0.007 ⁇
  • resistances 17a-h are 0.007 ⁇ .
  • the saturation voltage of semiconductor element 27a is the collector-emitter voltage of semiconductor element 27a when a constant voltage, for example 15V, is applied to the gate of semiconductor element 27a to turn semiconductor element 27a on and a large current, for example 50A, is passed through the collector of semiconductor element 27a.
  • a constant voltage for example 15V
  • a large current for example 50A
  • the voltage between collector sense terminal 33 and emitter electrode 127a of semiconductor element 27a is measured and used as the saturation voltage of semiconductor element 27a.
  • This saturation voltage is a value that includes the voltage drop across resistor 13.
  • the second constant current sources 2a and 2b can constantly flow 200 A, half of the desired current (400 A in this case), to the first electrode 31, so that the measurement error due to the resistor 13 can be reduced by half.
  • the variation in the measurement error of the saturation voltage of the semiconductor element caused by the above current within the wafer 63 can be reduced.
  • the saturation voltage of semiconductor element 27a is 0.45 V.
  • the saturation voltage of semiconductor element 26a is 0.55 V.
  • the second constant current sources 2a and 2b reduce measurement errors and reduce the difference in the saturation voltages of semiconductor elements 27a and 26a, i.e., the in-plane distribution is improved.
  • FIG. 4 is a flowchart showing the procedure for a saturation voltage test of a semiconductor element in embodiment 1.
  • the semiconductor testing device is connected to the multiple semiconductor elements under test.
  • the semiconductor elements under test are semiconductor elements 27a-h
  • the emitters on the front surfaces of the semiconductor elements 27a-h are electrically connected to the negative electrodes of the first constant current sources 1a-h by needle-shaped first probes 53a-h.
  • the gates on the front surfaces of the semiconductor elements 27a-h are electrically connected to the drive circuit 55 of the semiconductor testing device by needle-shaped second probes 54a-h.
  • the collectors on the back surfaces of the semiconductor elements 27a-h are directly and electrically connected to the test stage 51 (conductor) which acts as the positive electrode.
  • step S03 the drive circuit 55 turns on the semiconductor elements 27a-h of the test subject.
  • step S04 the supply of current from the semiconductor testing device begins.
  • the first constant current sources 1a-h begin supplying constant current.
  • the second constant current source 2a begins supplying a current that is 1/2 the sum of the currents of the first constant current sources 1a-1h.
  • the second constant current source 2b begins supplying a current that is 1/2 the sum of the currents of the first constant current sources 1a-1h.
  • step S041 the voltage measurement unit 3 measures the saturation voltage of the semiconductor elements 27a-h by measuring the voltage between the collector sense terminal 33 and the emitter electrodes of the semiconductor elements 27a-h.
  • step S05 if the measured saturation voltage is within the standard, the process proceeds to step S06. If the measured saturation voltage is outside the standard, the process proceeds to step S07.
  • step S06 the semiconductor elements 27a to 27h under test are judged to be pass.
  • step S07 the semiconductor elements 27a-h under test are judged to be unacceptable. If unacceptable, the semiconductor elements under test may be marked with ink, for example. Pass or fail may be recorded electronically.
  • step S08 the supply of current from the semiconductor testing equipment is stopped. That is, the output of current from the first constant current sources 1a-h and the second constant current sources 2a-b is stopped.
  • the driving circuit 55 turns off the semiconductor elements 27a-h under test.
  • step S09 the semiconductor testing equipment is disconnected from the semiconductor elements 27a-h under test.
  • step S10 the test stage 51 moves to the measurement position for the next semiconductor element.
  • the processes of steps S01 to S10 are repeated until all the semiconductor elements on the wafer 63 have been measured. Alternatively, in the case of a sampling test, only the semiconductor elements in predetermined positions are measured.
  • the current flowing through the first electrode 31 and the second electrode 32 is the same, so that it is possible to reduce the variation in measurement error across the surface of the wafer 63 in high current tests such as measuring the saturation voltage of semiconductor elements.
  • Embodiment 2 Although the true value of the saturation voltage of the semiconductor element 27 is equal to the voltage across the resistor 17, it is difficult to directly measure the potential between the collector electrode and the emitter electrode of the semiconductor element 27. Therefore, in the first embodiment, the voltage between the collector sense terminal 33 and the negative electrode of the first constant current source 1a-h is measured, and this is regarded as the saturation voltage of the semiconductor element 27.
  • the saturation voltage of the semiconductor element 27 deviates from the true value due to the resistance component of the path from resistor 17 to the negative electrode of the first constant current source 1, but the only way to reduce this deviation is to lower the resistance component.
  • the current flowing through the first electrode 31 is reduced by half by providing two constant current sources and two current supply points. This makes it possible to reduce the voltage drop caused by resistor 13 by half.
  • M there are M second current sources and M current supply points, where M is a natural number equal to or greater than 3.
  • the M electrodes are arranged at equal angular intervals on the outer periphery of the test stage 51.
  • Each of the M electrodes is connected to a corresponding one of the M second constant current sources, and functions as M current supply points.
  • FIG. 5 is a diagram showing the configuration of a semiconductor testing device according to the second embodiment.
  • this semiconductor testing device further includes a second constant current source 2c, a second constant current source 2d, a third electrode 131, and a fourth electrode 132.
  • Resistor 110 is the resistance of the electrical wiring between the second constant current source 2c and the third electrode 131.
  • Resistor 111 is the resistance of the electrical wiring between the second constant current source 2d and the fourth electrode 132. The resistance components within the test stage 51 are not shown.
  • the first electrode 31 is connected to the positive electrode of the second constant current source 2a.
  • the second electrode 32 is connected to the positive electrode of the second constant current source 2b.
  • the third electrode 131 is connected to the positive electrode of the second constant current source 2c.
  • the fourth electrode 132 is connected to the positive electrode of the second constant current source 2d.
  • the first electrode 31, the third electrode 131, the second electrode 32, and the fourth electrode 132 are arranged at 90° intervals on the outer periphery of the test stage 51.
  • the current flowing through the first electrode 31 is reduced to 1/M, and the voltage drop due to the resistor 13 is reduced to 1/M. Therefore, the deviation of the saturation voltage from the true value caused by the resistor 13 can be reduced to 1/M. As a result, the measurement error due to the resistor 13 can be reduced to 1/M.
  • Embodiment 3. 6 is a diagram showing the configuration of a semiconductor test apparatus according to embodiment 3.
  • the semiconductor test apparatus according to embodiment 3 differs from the semiconductor test apparatus according to embodiment 1 in that the semiconductor test apparatus according to embodiment 3 includes only a first constant current source 1, and includes a first variable resistor 71, a second variable resistor 72, a first ammeter 81, and a second ammeter 82.
  • the first end of the first variable resistor 71 is connected to the positive electrode of the first constant current source 1a to 1h, and the second end of the first variable resistor 71 is connected to the first electrode 31.
  • the first end of the second variable resistor 72 is connected to the positive electrode of the first constant current source 1a to 1h, and the second end of the second variable resistor 72 is connected to the second electrode 32.
  • the first ammeter 81 is connected in series to the first variable resistor 71.
  • the second ammeter 82 is connected in series to the second variable resistor 72.
  • the first ammeter 81 measures the current flowing through the first variable resistor 71.
  • the second ammeter 82 measures the current flowing through the second variable resistor 72.
  • an oscilloscope may be used to measure the transient voltage of the current transformer. The resistance values of the variable resistors 71 and 72 are adjusted so that the currents flowing through the first electrode 31 and the second electrode 32 are equal.
  • FIG. 7 is a flowchart showing the procedure for a saturation voltage test of a semiconductor element in embodiment 3.
  • the flowchart of the third embodiment differs from the flowchart of the second embodiment in that the flowchart of the third embodiment includes step S04a instead of step S04.
  • step S04a the supply of current from the semiconductor testing equipment is started.
  • the first constant current sources 1a-h start supplying constant current.
  • the first ammeter 81 measures the magnitude of the current flowing through the first variable resistor 71.
  • the second ammeter 82 measures the magnitude of the current flowing through the second variable resistor 72.
  • the resistance values of the first variable resistor 71 and the second variable resistor 72 are adjusted so that the values of the first ammeter 81 and the second ammeter 82 are equal.
  • the first variable resistor 71 starts supplying a current that is 1/2 the sum of the currents of the first constant current sources 1a-1h.
  • the second variable resistor 72 starts supplying a current that is 1/2 the sum of the currents of the first constant current sources 1a-1h.
  • the magnitude of the resistance component between the semiconductor element under test and the first electrode 31, and the resistance component between the semiconductor element under test and the second electrode 32 are obtained in advance.
  • an in-plane distribution of voltage drop is created on a wafer such as a TEG (Test Element Group) wafer, in which the resistance values of the semiconductor elements are known. Since the current value and the resistance value of the semiconductor element are known, the resistance component between the semiconductor element under test and the first electrode 31, and the resistance component between the semiconductor element under test and the second electrode 32 can be obtained.
  • Variation 2 of embodiment 3 By making the first variable resistor 71 and the second variable resistor 72 equal in size and setting the resistance values of the first variable resistor 71 and the second variable resistor 72 to values sufficiently larger than the resistance components of the current path on the test stage, such as the wiring resistor 10, and the contact resistance between the semiconductor element and the test stage, it is possible to realize an equal current of 1/2. However, if the resistance value is large, the capacity of the constant current source of the semiconductor test equipment will increase, leading to increased costs. It is necessary to grasp the resistance values of the semiconductor element and the semiconductor test equipment and set an appropriate resistance value.
  • M is a natural number equal to or greater than 3.
  • the M electrodes are arranged at equal angular intervals on the outer periphery of the test stage 51.
  • Each of the M electrodes is connected to a corresponding one of the M variable resistors and functions as M current supply points.
  • An ammeter may be used to measure the current flowing through each of the M variable resistors 71, and the resistance value of each of the M variable resistors 71 may be adjusted so that each of the M variable resistors 71 supplies a current that is 1/M of the sum of the currents of the first constant current sources 1a to 1h.
  • Embodiment 4. 8 is a diagram showing the configuration of a semiconductor test apparatus according to the fourth embodiment.
  • the semiconductor test apparatus according to the fourth embodiment differs from the semiconductor test apparatus according to the first embodiment in that the semiconductor test apparatus according to the fourth embodiment includes a collector sense terminal 34, and includes a voltage measurement unit 3a and an arithmetic unit 69 instead of the voltage measurement unit 3.
  • the collector sense terminal 34 is disposed closer to the second electrode 32 than the first electrode 31. It is more preferable that the collector sense terminal 34 be disposed near the second electrode 32.
  • the collector sense terminal 34 is electrically connected to the positive electrodes on the back surfaces of the semiconductor elements 26 and 27.
  • the voltage measurement unit 3a measures the voltage Vce(sat)Aa-h between the collector sense terminal 33 and the emitter electrodes 127a-h. At the same time, the voltage measurement unit 3a measures the voltage Vce(sat)Ba-h between the collector sense terminal 34 and the emitter electrodes 127a-h.
  • the collector sense terminal 34 and the second electrode 32 are assumed to be at the same potential.
  • the calculation device 69 calculates the measured voltages Vce(sat)Aa-h and Vce(sat)Ba-h to determine the saturation voltage Vce(sat) of the semiconductor element. For example, the calculation device 69 can determine the average value of Vce(sat)Aa-h and Vce(sat)Ba-h as the saturation voltage Vce(sat)a-h of the semiconductor element.
  • FIG. 9 is a simplified diagram of the path for measuring the saturation voltage of semiconductor element 27 in embodiment 4.
  • FIG. 10 is a simplified diagram of the path for measuring the saturation voltage of semiconductor element 26 in embodiment 4.
  • resistor 10 is 0.1 ⁇
  • resistor 11 is 0.11 ⁇
  • resistor 12 is 0.001 ⁇
  • resistor 13 is 0.0005 ⁇
  • resistor 14 is 0.001 ⁇
  • resistor 15 is 0.0005 ⁇
  • resistors 16a-h are 0.007 ⁇
  • resistors 17a-h are 0.007 ⁇ .
  • the resistance of the test stage 51 is uniform, and the contact resistance between the positive electrode on the back surface of the wafer 63 and the test stage 51 is uniform.
  • the magnitude of resistor 13 and the magnitude of resistor 14 will be the same.
  • the resistance component of the test stage 51 is not uniform, and the electrical contact resistance between the positive electrode on the back surface of the wafer 63 and the test stage 51 is not uniform. Therefore, the magnitudes of resistors 13 and 14 will differ depending on the position of the semiconductor element on the wafer 63. In this embodiment, the variation in the magnitudes of resistors 13 and 14 can be reduced by, for example, averaging the two measured values Vce(sat)Aa-h and Vce(sat)Ba-h.
  • the calculation device 69 may change the method for determining the saturation voltages Vce(sat)a-h of the semiconductor element from the measured values Vce(sat)Aa-h and Vce(sat)Ba-h depending on the position of the semiconductor element.
  • a weighting method based on the difference in distance between the semiconductor element and the two electrodes may be used.
  • the calculation device 69 may use the measurement values Vce(sat)Aa-h as the saturation voltages Vce(sat)a-h of the semiconductor elements 27a-h.
  • FIG. 11 is a flowchart showing the procedure for measuring the saturation voltage in the fourth embodiment.
  • the flowchart in the fourth embodiment differs from the flowchart in the first embodiment in that the flowchart in the fourth embodiment includes step S041a instead of step S041.
  • step S041a the voltage measurement unit 3a measures the voltages Vce(sat)Aa-h between the collector sense terminal 33 and the emitter electrodes 127a-h.
  • the voltage measurement unit 3a measures the voltages Vce(sat)Ba-h between the collector sense terminal 34 and the emitter electrodes 127a-h.
  • the calculation device 69 can calculate (for example, average) these measured values to determine the saturation voltages Vce(sat)a-h of the semiconductor elements 27a-h under test.
  • the current flowing through the first electrode 31 and the second electrode 32 is constant, and the saturation voltage is calculated by calculating the measured values at two points, thereby reducing the variation in measurement error within the surface of the wafer 63 during high current testing.
  • Embodiment 5 The true value of the saturation voltage of semiconductor element 27 is equal to the voltage across resistor 17. However, since it is difficult to directly measure the potential between the collector electrodes and emitter electrodes of semiconductor elements 27a-h, in embodiment 4, the voltage between collector sense terminal 33, which has the same potential as first electrode 31, and emitter electrodes 127a-h, and the voltage between collector sense terminal 34, which has the same potential as second electrode 32, and emitter electrodes 127a-h are measured, and the two measured values are calculated to be the saturation voltage of semiconductor elements 27a-h.
  • the resistance component of the path from resistor 17 to emitter electrode 127 causes the saturation voltage of semiconductor elements 27a-h to deviate from the true value, but the only way to reduce this deviation is to lower the resistance component.
  • the current flowing through first electrode 31 is halved by providing two second constant current sources and two current supply points. This makes it possible to reduce the voltage drop caused by resistor 13 by half.
  • N is a natural number equal to or greater than 3.
  • the M electrodes are arranged at equal angular intervals on the outer periphery of the test stage 51. Each of the M electrodes is connected to a corresponding one of the M second constant current sources 2 and functions as M current supply points. Each of the M collector sense terminals is arranged at a position closer to a corresponding one of the M electrodes than to all of the other M electrodes.
  • FIG. 12 is a diagram showing the configuration of a semiconductor testing device according to the fifth embodiment.
  • this semiconductor testing device further includes a second constant current source 2c, a second constant current source 2d, a third electrode 131, a fourth electrode 132, a collector sense terminal 133, and a collector sense terminal 134.
  • Resistor 110 is the resistance of the electrical wiring between the second constant current source 2c and the third electrode 131.
  • Resistor 111 is the resistance of the electrical wiring between the second constant current source 2d and the fourth electrode 132. The resistance components within the test stage 51 are not shown.
  • the first electrode 31 is connected to the positive electrode of the second constant current source 2a.
  • the second electrode 32 is connected to the positive electrode of the second constant current source 2b.
  • the third electrode 131 is connected to the positive electrode of the second constant current source 2c.
  • the fourth electrode 132 is connected to the positive electrode of the second constant current source 2d.
  • the first electrode 31, the third electrode 131, the second electrode 32, and the fourth electrode 132 are arranged at 90° intervals on the outer periphery of the test stage 51.
  • Collector sense terminal 33 is positioned closer to electrode 31 than to electrodes 32, 131, and 132.
  • Collector sense terminal 133 is positioned closer to electrode 131 than to electrodes 31, 32, and 132.
  • Collector sense terminal 34 is positioned closer to electrode 32 than to electrodes 31, 131, and 132.
  • Collector sense terminal 134 is positioned closer to electrode 132 than to electrodes 31, 32, and 131.
  • FIG. 13 is a diagram showing the configuration of a semiconductor testing device according to the sixth embodiment.
  • the semiconductor testing device of the sixth embodiment differs from the semiconductor testing device of the fifth embodiment in the positions of the collector sense terminals 33, 34, 133, and 134.
  • Collector sense terminal 33 is positioned on the outer periphery of test stage 51 at a position equidistant from the positions of electrodes 31 and 132.
  • Collector sense terminal 134 is positioned on the outer periphery of test stage 51 at a position equidistant from the positions of electrodes 132 and 32.
  • Collector sense terminal 34 is positioned on the outer periphery of test stage 51 at a position equidistant from the positions of electrodes 32 and 131.
  • Collector sense terminal 133 is positioned on the outer periphery of test stage 51 at a position equidistant from the positions of electrodes 131 and 31.
  • the electrode 31 and the collector sense terminal 33 were considered to be at the same potential, but by separating the current flow point and the voltage measurement point, they are no longer at the same potential.
  • calculation device 69 can use the measurement result of voltage Vce between collector sense terminal 33 and emitter electrodes 127a-h.
  • the measurement value of voltage Vce between other collector sense terminals overlaps with the current flowing from electrode 132 toward semiconductor elements 27a-d, resulting in a large voltage drop. The same is true for other collector sense terminals.
  • Calculation device 69 stores map information for the wafer.
  • calculation device 69 uses one of the measurements of voltage Vce between collector sense terminals 33, 334, 133, 134 and emitter electrodes 127a-h depending on the position of the semiconductor element.
  • the calculation device 69 can determine the voltage between the collector sense terminal closest to the semiconductor element 27a-h and the emitter electrode 127a-h as the saturation voltage Vce(sat)a-h of the semiconductor element 27a-h under test.
  • the calculation device 69 can determine the smallest measurement value of the voltage Vce between the collector sense terminals 33, 334, 133, 134 and the emitter electrodes 127a-h as the saturation voltage Vce(sat)a-h of the semiconductor elements 27a-h under test. This is based on the idea that the resistance component of the test stage 51 is proportional to the distance, but in reality this may not be the case due to scratches, etc.
  • FIG. 14 is a flowchart showing the procedure for measuring the saturation voltage in the sixth embodiment.
  • the flowchart in the sixth embodiment differs from the flowchart in the first embodiment in that the flowchart in the sixth embodiment includes step S041b instead of step S041.
  • step S041b the voltage measurement unit 3a measures the voltages Vce(sat)Aa-h between the collector sense terminal 33 and the emitter electrodes 127a-h.
  • the voltage measurement unit 3a measures the voltages Vce(sat)Ba-h between the collector sense terminal 34 and the emitter electrodes 127a-h.
  • the voltage measurement unit 3a measures the voltages Vce(sat)Ca-h between the collector sense terminal 133 and the emitter electrodes 127a-h.
  • the voltage measurement unit 3a measures the voltages Vce(sat)Da-h between the collector sense terminal 134 and the emitter electrodes 127a-h.
  • the calculation device 69 uses the map information to select one of these measured values and sets it as the saturation voltage Vce(sat)a-h of the semiconductor elements 27a-h under test.
  • the calculation device 69 can refer to the map information to determine the voltage between the collector sense terminal closest to the semiconductor elements 27a-h and the emitter electrodes 127a-h as the saturation voltage Vce(sat)a-h of the semiconductor elements 27a-h under test.
  • the calculation device 69 can determine the smallest of these measured values as the saturation voltage Vce(sat)a-h of the semiconductor elements 27a-h under test.
  • Embodiment 7 a method for manufacturing a semiconductor device including the semiconductor elements 26 and 27 in the above-mentioned first to sixth embodiments will be described. In other words, the seventh embodiment will describe a method for manufacturing a semiconductor device including the semiconductor testing method according to the first to sixth embodiments in the manufacturing process.
  • FIG. 15 is a flow chart showing a method for manufacturing a semiconductor device according to the seventh embodiment.
  • step S101 a semiconductor device is manufactured by a wafer process.
  • step S102 the manufactured wafer is tested.
  • the semiconductor device test method shown in the first to sixth embodiments is carried out.
  • dynamic characteristic tests may be added.
  • step S103 the semiconductor elements that have passed the test are commercialized. In this step, if they are to be shipped in wafer form, they are diced into individual semiconductor elements, and if they are to be shipped as semiconductor elements, the semiconductor elements are mounted in modules and shipped.
  • 1a-h first constant current source
  • 2a-d second constant current source
  • 3a voltage measuring unit, 10, 11, 12, 13, 13a, 14, 15, 16a, 17, 17a, 110, 111: resistor, 26a-h, 27a-h: semiconductor element, 31, 32, 131, 132: electrode, 33, 34, 133, 134: collector sense terminal
  • 53a-h first probe
  • 54a-h second probe
  • 63 wafer
  • 69 calculation device
  • 71, 72 variable resistor
  • 81, 82 ammeter
  • 126a-h, 127a-h emitter electrode.

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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
PCT/JP2023/036242 2022-11-17 2023-10-04 半導体試験装置、半導体試験方法および半導体装置の製造方法 WO2024106052A1 (ja)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019060768A (ja) * 2017-09-27 2019-04-18 日本電産リード株式会社 抵抗測定装置、基板検査装置、及び抵抗測定方法
JP2020173197A (ja) * 2019-04-12 2020-10-22 株式会社クオルテック 半導体試験装置および半導体素子の試験方法。
WO2022074952A1 (ja) * 2020-10-05 2022-04-14 三菱電機株式会社 半導体試験装置および半導体試験方法
JP2022143992A (ja) * 2021-03-18 2022-10-03 三菱電機株式会社 半導体試験装置および半導体試験方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019060768A (ja) * 2017-09-27 2019-04-18 日本電産リード株式会社 抵抗測定装置、基板検査装置、及び抵抗測定方法
JP2020173197A (ja) * 2019-04-12 2020-10-22 株式会社クオルテック 半導体試験装置および半導体素子の試験方法。
WO2022074952A1 (ja) * 2020-10-05 2022-04-14 三菱電機株式会社 半導体試験装置および半導体試験方法
JP2022143992A (ja) * 2021-03-18 2022-10-03 三菱電機株式会社 半導体試験装置および半導体試験方法

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