WO2024075169A1 - 光送信器 - Google Patents

光送信器 Download PDF

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Publication number
WO2024075169A1
WO2024075169A1 PCT/JP2022/037033 JP2022037033W WO2024075169A1 WO 2024075169 A1 WO2024075169 A1 WO 2024075169A1 JP 2022037033 W JP2022037033 W JP 2022037033W WO 2024075169 A1 WO2024075169 A1 WO 2024075169A1
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WO
WIPO (PCT)
Prior art keywords
driver
optical
optical modulator
modulator chip
peltier element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/037033
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English (en)
French (fr)
Japanese (ja)
Inventor
常祐 尾崎
義弘 小木曽
光映 石川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2024555491A priority Critical patent/JPWO2024075169A1/ja
Priority to PCT/JP2022/037033 priority patent/WO2024075169A1/ja
Publication of WO2024075169A1 publication Critical patent/WO2024075169A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells

Definitions

  • This disclosure relates to an optical transmitter used in optical communications. More specifically, it relates to an implementation form of an optical transmitter that includes a semiconductor optical modulator and its driver IC.
  • an optical transceiver in which an optical receiver and an optical transmitter are integrated is used.
  • broadband analog components such as radio frequency (RF) electrical circuits are required.
  • RF radio frequency
  • an optical modulator requires a modulation bandwidth of 40 GHz or more.
  • HB-CDM High-Bandwidth Coherent Driver Modulator
  • ICR Integrated Coherent Receiver
  • semiconductor-based optical modulators are attracting attention as an alternative to conventional lithium niobate (LN) optical modulators due to their compact size and low cost.
  • Compound semiconductors such as InP are mainly used for faster modulation operations.
  • Si-based optical devices Furthermore, in systems where compact size and low cost are important, research and development is focused on Si-based optical devices.
  • the semiconductor optical modulators mentioned above have their own advantages and disadvantages specific to each material.
  • temperature control of the optical modulator chip is essential during operation in order to control the band-edge absorption effect.
  • a Si optical modulator has the advantage of not needing temperature control, but has a smaller electro-optic effect than other material systems. This makes it necessary to lengthen the electro-optic interaction length, which can result in increased high-frequency loss as a result of the device length increasing.
  • the operating temperature (case temperature) of an optical transmitter using HB-CDM must be in the range of at least -5°C to 75°C. In order to ensure this operating temperature, it has been common to only mount the optical modulator chip on a Peltier element, taking into account power consumption (Patent Document 1).
  • the present invention provides a new configuration and implementation form of an optical transmitter that suppresses the temperature dependency of an optical transmitter including a driver IC, has excellent high-speed performance, and is capable of stable operation regardless of the environmental temperature.
  • the present disclosure provides an optical transmitter that includes an optical modulator chip, a driver IC for operating the optical modulator chip, a wiring board having a substantially straight high-frequency line and connecting the optical modulator chip and the driver IC, which is mounted face-down by flip-chip mounting, and a Peltier element placed under the optical modulator chip and the driver IC, and the optical modulator chip and the driver IC are temperature controlled by the same Peltier element.
  • FIG. 1 is a cross-sectional side view showing an implementation of an optical transmitter 100 using HB-CDM according to the prior art.
  • FIG. 2 is a side cross-sectional view showing an implementation of an optical transmitter 200 according to the present disclosure.
  • FIG. 2 is a cross-sectional side view showing an implementation of an optical transmitter 300 according to the present disclosure.
  • FIG. 4 is a side cross-sectional view showing an implementation of an optical transmitter 400 according to the present disclosure.
  • FIG. 5 is a cross-sectional side view showing an implementation of an optical transmitter 500 according to the present disclosure.
  • FIG. 6 is a cross-sectional side view showing an implementation of an optical transmitter 600 according to the present disclosure.
  • FIG. 7 is a cross-sectional side view showing an implementation of an optical transmitter 700 according to the present disclosure.
  • 2 is a diagram illustrating an example of the configuration of a Peltier element 205 used in an optical transmitter 200-700 according to the present disclosure.
  • This disclosure presents new configurations for improving the temperature dependency of the high-frequency characteristics of an optical transmitter in an optical transmitter in which an optical modulator and its driver IC are integrally packaged, and implementation forms compatible with each configuration.
  • the configuration for improving the temperature dependency includes a new usage form of a temperature regulator (TEC: ThermoElectric Cooler) in the optical transmitter.
  • TEC ThermoElectric Cooler
  • various implementation forms of the driver IC, optical modulator chip, and spatial optical components compatible with the new usage form of the TEC are also proposed.
  • TECs are also known as thermoelectric coolers, and are known as small cooling devices that use Peltier junctions. TECs are made up of n-type semiconductors, p-type semiconductors, and metals, and when a direct current is passed through both sides of the plate-shaped element, heat absorption occurs on one side and heat dissipation occurs on the other. Reversing the direction of the current switches between heat absorption and dissipation, allowing for localized and precise temperature control of ICs and electronic components.
  • the temperature regulator will be referred to as a TEC and will be described as a Peltier element. It is not limited to Peltier elements, as long as it is capable of controlling the temperature of driver ICs and optical modulator chips.
  • Figure 1 is a side cross-sectional view showing the mounting form of an optical transmitter using HB-CDM, a conventional technology.
  • the optical transmitter 100 contains a driver IC 102, an optical modulator chip 103, and lenses 112 and 113, which are spatial optical components, inside a package housing 101 made of ceramic or the like. More specifically, the optical modulator chip 103 is mounted on the inside bottom surface of the housing 101 via a subcarrier 104 on a Peltier element 105. The right end of the optical modulator chip 103 in the drawing has an output end surface for modulated light, and lenses 112 and 113 for optically coupling the modulated light to an optical fiber 114 are also mounted on the subcarrier.
  • a driver IC 102 is mounted on a metal block or ceramic material 106 adjacent to the optical modulator chip 103.
  • the package housing 101 has a wiring board base 107 and a package wall 108 as the left wall in the drawing, which, together with the package housing 101, separate the outside from the internal space of the optical transmitter.
  • the optical transmitter 100 can also be constructed so that the entire package is airtight.
  • the modulated electrical signal supplied from an external digital signal processor (DSP) is supplied to the optical modulator chip 103 via the wiring layer 109 and driver IC 102 of the wiring board base 107.
  • the wiring layer 109 and the driver IC 102, and the driver IC 102 and the optical modulator chip 103 are connected by gold wires 110, 111, etc., respectively.
  • the modulated electrical signal includes an I channel and a Q channel for each of the X polarization and the Y polarization.
  • one channel is supplied as an electrical signal in a differential signal format, at least eight signal wirings and a GND wiring are required for one optical modulator, but the modulated signal format is not limited to this.
  • the optical modulator 100 shown in FIG. 1 can be mounted on a common device substrate together with an ICR package in which the receiving side TIA and optical receiver are integrated, and a DSP, to configure an optical transmitting and receiving device.
  • the Peltier element 105 in the optical transmitter. Temperature control is essential for the optical modulator chip 103 fabricated on an InP substrate, and the Peltier element 105 controls the temperature to a predetermined operating temperature. As shown in FIG. 1, the Peltier element 105 has a size that covers at least the entire area of the optical modulator chip 103, and its position may overlap the area of spatial optical components such as lenses.
  • the optical transmitter 100 of the conventional technology it was considered that temperature control of the driver IC 102 was not necessary, and it was fixed in the package by a member 106 such as a metal block or ceramic. If the external temperature (ambient temperature) of the optical transmitter 100 rises, the increased temperature becomes the operating temperature of the driver IC 102.
  • the temperature of the driver IC 102 itself is at least 85°C or higher.
  • the driver IC also consumes a lot of power, and the driver IC itself generates heat. This means that the heat generated by the driver IC will cause the backside temperature of the driver IC to exceed the maximum ambient temperature of 85°C.
  • the driver IC has temperature-dependent amplification characteristics (high frequency characteristics) of high frequency electrical signals, and at high temperatures the high frequency band tends to decrease compared to room temperature. Conversely, at low temperatures the high frequency band tends to increase compared to room temperature. Thus, the high frequency characteristics of the driver IC differ between low and high temperatures.
  • the modulation signal supplied to the driver IC is optimized and compensated in various ways by the DSP at room temperature. However, dynamically updating such compensation in line with temperature fluctuations is a complex process and is not generally implemented. Because operation continues at a constant compensation state at room temperature, the compensation state of the modulation signal deviates from the optimal point when the state changes to a low or high temperature. This causes fluctuations and deterioration in the optical transmission characteristics and waveform quality of the optical transmitter.
  • the IQ modulator of the optical modulator chip 103 is a linear modulator that preserves the amplitude and phase of the electrical signal, and fluctuations in the level and waveform quality of the modulated electrical signal directly affect the quality of the modulated output light. If the external temperature changes while the optical transmitter is in operation, the optical modulator chip itself is maintained at a constant temperature because the temperature is controlled by a Peltier element, but the operating temperature of the driver IC changes. As a result, fluctuations in the level and quality of the HB-CDM modulated light occur, and the transmission characteristics deteriorate and become unstable due to changes in the environmental temperature over time.
  • the deterioration of characteristics due to the environmental temperature on the high frequency side of the electrical signal causes waveform distortion of the modulated signal, degrading the modulation accuracy of the modulated output light from the optical modulator.
  • a floor appears in the BER characteristics, leading to a deterioration in the transmission characteristics of the system.
  • the present invention presents a new configuration and implementation form that improves the temperature dependency of high frequency characteristics and optical transmission characteristics in an optical transmitter in which an optical modulator and its driver IC are packaged together.
  • optical transmitter according to the present disclosure will be described in detail with reference to the drawings.
  • the optical transmitter according to the present disclosure will be described as being in the form of an HB-CDM with a flexible printed circuit board (FPC) interface.
  • FPC flexible printed circuit board
  • FIG. 2 is a side cross-sectional view showing a mounting form of an optical transmitter 200 according to the present disclosure.
  • a driver IC 202 In the optical transmitter 200, a driver IC 202, an optical modulator chip 203, and optical members (lenses 212 and 213, which are spatial optical components, are depicted as an example in FIG. 2) are housed inside a package housing 201. More specifically, the optical modulator chip 203 is mounted on the bottom surface inside the housing 201 via a subcarrier 204 on a Peltier element 205. At the right end of the drawing of the optical modulator chip 203, there is an output end surface of modulated light, and lenses 212 and 213 for optically coupling the modulated light with an optical fiber 214 are also mounted on the subcarrier.
  • the optical transmitter 200 includes a wiring board base 207 and a package wall 208 as the wall surface on the left side of the package housing 201 in the drawing, which, together with the package housing 201, separate the internal space of the optical transmitter from the outside.
  • the wiring board base 207 also has a package terrace, and a wiring layer 209 formed on the upper surface of the package terrace is connected to a flexible printed circuit board (FPC) as a high-frequency interface.
  • FPC flexible printed circuit board
  • the optical transmitter 200 can also be constructed so that the entire package is airtight.
  • the modulated electrical signal supplied from an external digital signal processor (DSP) is supplied to the optical modulator chip 203 via the wiring layer 209 of the wiring board base 207 and the driver IC 202.
  • the wiring layer 209 and the driver IC 202 are connected by gold wire 210.
  • the driver IC 202 and the optical modulator chip 203 are connected by a wiring board 215 having a nearly straight high-frequency line and pillars/bumps 216, 217.
  • the high-frequency line it is permissible for the high-frequency line to have a gentle curvature that does not cause significant deterioration in characteristics.
  • the driver IC 202 is mounted on the subcarrier 204, similar to the optical modulator chip 203 and lenses 212, 213.
  • the subcarrier 204 is installed on the Peltier element 205, in the optical transmitter 200, the temperature control by the Peltier element 205 also extends to the driver IC 202. Therefore, in the optical transmitter 200, the temperature of the driver IC 202 can be managed in the same way as the optical modulator chip 203.
  • the optical modulator chip 203 is an InP modulator
  • the optical modulator chip 203 is often used at around 45 ⁇ 10°C because an excessively low temperature reduces the modulation efficiency (however, depending on the semiconductor device design, there are also modulator chips that are used at temperatures lower than this).
  • the driver IC 202 has better high-frequency band characteristics at lower temperatures. Therefore, the Peltier element 205 needs to be constantly controlled at a temperature within the range of 25-50°C so that the characteristics of the driver IC 202 can be fully brought out without significant deterioration of the characteristics of the optical modulator chip 203.
  • a subcarrier 204 is mounted between the Peltier element 205 and the driver IC 202, the optical modulator chip 203, and the optical members (e.g., lenses 212, 213, etc.).
  • This subcarrier 204 adjusts the height of the driver IC 202 and the optical modulator chip 203, which will be described later, and functions as a substrate for extracting the DC wiring of the driver IC 202 and the optical modulator chip 203.
  • AlN has a linear expansion coefficient close to that of InP applied to the optical modulator chip 203, and can suppress thermal stress generated near the interface with the InP modulator, so it is suitable as a material applied to the subcarrier 204.
  • wiring (not shown) for extracting the DC wiring of the optical modulator chip 203 and positioning markers (not shown) for mounting optical members (e.g., lenses 212, 213, etc.) are formed on the subcarrier 204 by metal patterns.
  • subcarrier 204 is depicted in FIG. 2 as being one layer, it may be multi-layered. In particular, when there are a large number of DC wirings or when it is necessary to change the order of terminals, making it multi-layered allows for a layout that makes full use of multi-layer wiring.
  • the subcarrier 204 and driver IC 202, as well as the subcarrier 204 and optical modulator chip 203, must be mounted with a conductive paste or solder with a thermal conductivity of 30 W/mK or more in order to efficiently dissipate heat in the Peltier element 205. From the perspective of managing the process temperature during mounting, it is desirable to use the same conductive paste or solder for all of them, but these joint fillers do not necessarily need to be the same, and it is also possible to combine those with different fixed temperatures, etc.
  • optical components such as lenses 212 and 213 are mounted on subcarrier 204, similar to driver IC 202 and optical modulator chip 203, in order to prevent variations in adhesive thickness due to temperature changes. With this configuration, it is possible to minimize variations in optical insertion loss due to temperature changes.
  • the wiring board 215 is flip-chip mounted face-down between the driver IC 202 and the optical modulator chip 203, and the driver IC 202 and the wiring layer 209 are connected by gold wires 210.
  • the driver IC 202 and the optical modulator chip 203 are connected via the wiring board 215 and the pillars/bumps 216, 217.
  • the wiring board 215 and the pillars/bumps 216, 217 are formed by face-down flip-chip mounting, and the pillars/bumps 216, 217 can be Au pillars/bumps or Cu pillars/bumps.
  • the heights of the upper surfaces (surfaces on which the pillars/bumps are mounted) of the driver IC 202 and the optical modulator chip 203 are the same, and that the wiring board 215 is mounted so as to have a high degree of parallelism with respect to the driver IC 202 and the optical modulator chip 203. Specifically, if the inclination of the wiring board 215 with respect to the driver IC 202 and the optical modulator chip 203 exceeds ⁇ 3°, a bonding failure such as a gap occurring at the bonding portion may occur.
  • the dimensions of the Au pillar/bump or Cu pillar/bump that are generally used as the pillar/bumps 216 and 217 are often 100 ⁇ m or less in both diameter and height. Therefore, it is desirable to keep the height difference between the top surfaces of the driver IC 202 and the optical modulator chip 203 at least 100 ⁇ m or less (ideally 50 ⁇ m or less).
  • the heights of the top surfaces of the driver IC 202 and the optical modulator chip 203 must be the same (at least, the height difference must be within 100 ⁇ m). From the viewpoint of minimizing the variation in this height difference, it is most desirable to mount the driver IC 202 and the optical modulator chip 203 having the same chip thickness on the same subcarrier 204 as shown in FIG. 2 (for example, the driver IC 202 and the optical modulator chip 203 each have the same thickness of 300 ⁇ m). On the other hand, as shown in FIG.
  • the driver IC 202 and the optical modulator chip 203 have different thicknesses (for example, the driver IC 202 has a thickness of 100 ⁇ m and the optical modulator chip 203 has a thickness of 300 ⁇ m).
  • the driver IC 202 and the optical modulator chip 203 can be mounted on separate members to adjust the height of their respective top surfaces to match (FIG. 3 shows, as an example, a form in which only the driver IC 202 is mounted via a metal block 301 as the member in question).
  • a metal such as CuW or a ceramic with excellent thermal conductivity such as AlN can be used for the driver IC 202, taking into account heat dissipation and GND stability.
  • the driver IC 202 and the optical modulator chip 203 are depicted as being mounted on the same subcarrier 204, but as shown in FIG. 4 and FIG. 5, they may be mounted on the Peltier element 205.
  • the number of parts can be reduced by applying AlN having DC wiring and alignment marks for optical mounting to the upper surface of the Peltier element 205 (the surface on which the driver IC 202 and the optical modulator chip 203 are mounted). This reduction in the number of parts leads to a reduction in thermal resistance, and is therefore preferable from the viewpoint of temperature control.
  • the same effect can be achieved by using a metal block 501 for height adjustment to make the heights of the driver IC 202 and the optical modulator chip 203 the same.
  • the distance between the driver IC 202 and the optical modulator chip 203 be 300 ⁇ m or more.
  • the length of the wiring board 215 be 2 mm or less at the longest.
  • a thermal isolation groove 401 may be formed on at least one of the upper and lower surfaces of the subcarrier 204 between the driver IC 202 and the optical modulator chip 203 ( Figure 6 shows a configuration formed on the upper surface as an example). With this configuration, it is possible to thermally isolate the driver IC 203 and the modulator chip 204.
  • the wiring board 215 is preferably made of AlN due to the difference in linear expansion coefficient with InP, but from the viewpoint of further suppressing heat inflow from the driver IC 202, it is preferable to use a material with low thermal conductivity such as SiO2 or other resin using a dielectric material.
  • the material applied to the wiring board 215 is preferably selected appropriately according to the design, and is not necessarily limited to the above materials. For example, it is possible to obtain the same effect even with ceramics other than AlN, such as alumina.
  • driver IC 202 and the optical modulator chip 203 are depicted as being connected via the wiring board 215, but as shown in FIG. 7, the driver IC 202 and the wiring layer 209 may also be connected by flip-chip mounting using the wiring board 601 and the pillars/bumps 602, 603 instead of the gold wires 210.
  • the height difference between the driver IC 202 and the optical modulator chip 203 and the inclination of the wiring board 215 described above the height difference between the upper surfaces of the driver IC 202 and the wiring layer 209 must be at least 100 ⁇ m or less (ideally 50 ⁇ m or less), and the inclination of the wiring board 601 with respect to the driver IC 202 and the wiring layer 209 must be within ⁇ 3°.
  • the materials of the wiring board 601 and the pillars/bumps 602, 603 may be the same as or different from the wiring board 215 and the pillars/bumps 216, 217, but from the viewpoint of cost, it is preferable to use the same material. In such cases, the input and output pads of the driver IC are the same, and the pad shape and pitch of the connection between the optical modulator chip 203 and the wiring layer 209 are the same, making it possible to use the same wiring board and reduce costs.
  • the driver IC 202 and the optical modulator chip 203 have a differential line configuration.
  • the characteristics of high frequency differential lines are significantly degraded if they have a curvature, it is desirable that the high frequency lines on the wiring board are formed in straight lines. In order to configure them in straight lines, it is desirable that the connection pad pitches of the respective components are the same.
  • the difference in height between the top surfaces of the driver IC 201 and the wiring layer 209 is about 100 ⁇ m.
  • the gold wire 210 is a ball wire, it is preferable to set the height of the top surface of the driver IC 202 lower than the top surface of the wiring layer 209 and to configure the gold wire 210 so that it rises from the driver IC 202 to the wiring layer 209 side, in order to minimize the wire length.
  • the gold wire 210 does not have a loop and is a wire that can connect the driver IC 201 and the wiring layer 209 flat, it is desirable that the heights of the top surfaces of the driver IC 201 and the wiring layer 209 are the same.
  • optical components are assumed to be lens mounted, but this is not limited to this and other mounting methods may be used.
  • optical components include not only lenses 212 and 213 but also components for fixing fibers, etc.
  • (Configuration of Peltier element) 8 is a diagram illustrating the configuration of the Peltier element 205 used in the optical transmitter (optical transmitter 200-700) according to the present disclosure.
  • a difference in the amount of heat generated occurs between the driver IC 202 and the optical modulator chip 203.
  • the driver IC 202 has the highest temperature, followed by the optical modulator chip 203, and then the optical members (for example, lenses 212, 213, etc.).
  • an example of the Peltier element 205 used in the optical transmitter according to the present disclosure is configured so that the element density of the n-type and p-type semiconductors is as follows: area where the driver IC 202 is mounted>area where the optical modulator chip 203 is mounted>area where the optical members are mounted. By configuring in this way, it becomes possible to perform appropriate temperature control (suppression of excessive or insufficient cooling) according to the temperature distribution.
  • the optical transmitter disclosed herein can realize a new configuration and implementation form of an optical transmitter that suppresses the temperature dependency of the optical transmitter including the driver IC, has excellent speed, and can operate stably regardless of the environmental temperature. For this reason, it is expected to be applied to high-speed digital coherent optical transmission systems, etc.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
PCT/JP2022/037033 2022-10-03 2022-10-03 光送信器 Ceased WO2024075169A1 (ja)

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PCT/JP2022/037033 WO2024075169A1 (ja) 2022-10-03 2022-10-03 光送信器

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003222826A (ja) * 2002-01-29 2003-08-08 Hitachi Ltd 光送信モジュール
US20170194310A1 (en) * 2016-01-04 2017-07-06 Infinera Corporation Photonic integrated circuit package
JP2017123379A (ja) * 2016-01-05 2017-07-13 富士通株式会社 半導体装置
JP2018189699A (ja) * 2017-04-28 2018-11-29 日本電信電話株式会社 光送信器
JP2021509483A (ja) * 2017-12-26 2021-03-25 住友電気工業株式会社 光モジュール及び光モジュールの組立方法
WO2021084602A1 (ja) * 2019-10-29 2021-05-06 日本電信電話株式会社 光モジュール

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4779779B2 (ja) * 2006-04-07 2011-09-28 パナソニック電工株式会社 静電霧化装置
JP5619826B2 (ja) * 2012-07-12 2014-11-05 古河電気工業株式会社 接着剤組成物およびレーザモジュール

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003222826A (ja) * 2002-01-29 2003-08-08 Hitachi Ltd 光送信モジュール
US20170194310A1 (en) * 2016-01-04 2017-07-06 Infinera Corporation Photonic integrated circuit package
JP2017123379A (ja) * 2016-01-05 2017-07-13 富士通株式会社 半導体装置
JP2018189699A (ja) * 2017-04-28 2018-11-29 日本電信電話株式会社 光送信器
JP2021509483A (ja) * 2017-12-26 2021-03-25 住友電気工業株式会社 光モジュール及び光モジュールの組立方法
WO2021084602A1 (ja) * 2019-10-29 2021-05-06 日本電信電話株式会社 光モジュール

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