WO2024053390A1 - 研磨剤、研磨剤用添加液および研磨方法 - Google Patents

研磨剤、研磨剤用添加液および研磨方法 Download PDF

Info

Publication number
WO2024053390A1
WO2024053390A1 PCT/JP2023/030140 JP2023030140W WO2024053390A1 WO 2024053390 A1 WO2024053390 A1 WO 2024053390A1 JP 2023030140 W JP2023030140 W JP 2023030140W WO 2024053390 A1 WO2024053390 A1 WO 2024053390A1
Authority
WO
WIPO (PCT)
Prior art keywords
group
polishing
carbon
substituent
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/030140
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
秀喜 中島
知夫 加藤
正敏 赤時
有造 岡村
紘明 岩本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to KR1020257010447A priority Critical patent/KR20250060247A/ko
Priority to CN202380060788.2A priority patent/CN119768483A/zh
Priority to EP23862929.9A priority patent/EP4585665A1/en
Priority to JP2024545548A priority patent/JPWO2024053390A1/ja
Publication of WO2024053390A1 publication Critical patent/WO2024053390A1/ja
Priority to US19/070,728 priority patent/US20250197676A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/015—Temperature control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Definitions

  • the present invention relates to an abrasive, an additive liquid for an abrasive, and a polishing method.
  • CMP chemical mechanical polishing method
  • Patent Document 1 discloses a specific polishing composition containing alumina abrasive grains, glycine, hydrogen peroxide, an anionic surfactant, and water as a polishing composition for polishing copper and resin. has been done.
  • Patent Document 2 discloses a specific abrasive that combines silica particles (first abrasive grains) and particles to which an aluminum compound or the like is attached (second abrasive grains).
  • 3D packaging in which two or more chips are stacked and packaged, has been put into practical use in order to further increase the degree of integration of semiconductor integrated circuits.
  • chips may be stacked including, for example, a redistribution layer (RDL). Therefore, resin layers such as rewiring layers are also required to have even higher flatness. Furthermore, since the number of manufacturing processes increases in 3D packaging, higher speed polishing is required from the viewpoint of improving manufacturing efficiency.
  • RDL redistribution layer
  • the present disclosure provides an abrasive, an additive liquid for an abrasive, and a polishing method that can polish a polished surface containing a resin to a high flatness at high speed.
  • the present disclosure provides an abrasive, a polishing method, and an additive liquid for an abrasive having the following configurations [1] to [30].
  • An abrasive for polishing a surface to be polished containing resin Contains abrasive grains, a water-soluble nitrogen-containing compound, and water, A polishing agent, wherein the water-soluble nitrogen-containing compound contains a compound represented by the following formulas (1) to (3) or a salt thereof. however, (I) R 1 to R 3 each independently represent a hydrogen atom, an alkyl group that may have a substituent or an ether bond between carbons, or a hetero group that may have a substituent.
  • aryl group that may have an atom (atom other than a hydrogen atom and a carbon atom) or a group represented by the following formula (1a),
  • Y 1 is a hydrogen atom, an alkyl group that may have a substituent and may have an ether bond between carbon and carbon, an aryl group that may have a substituent and a heteroatom, A hydroxyl group or an amino group
  • Two selected from R 1 to R 3 may be linked to each other to form a ring structure, (II)
  • R 4 to R 7 each independently represent a hydrogen atom, an alkyl group that may have a substituent and an ether bond between carbon and carbon, and a
  • aryl group which may have an atom, a group represented by the following formula (2a), or a group represented by the following formula (2b),
  • Y2 is a hydrogen atom, an alkyl group that may have a substituent and may have an ether bond between carbon and carbon, an aryl group that may have a substituent and a heteroatom, A hydroxyl group or an amino group
  • R 8 to R 10 are each independently a hydrogen atom, an alkyl group which may have an aryl group, an amino group or a halogen atom as a substituent, and which may have an ether bond between carbon and carbon; or a group represented by the following formula (3a), provided that at least one of R 8 to R 10 is a group other than a hydrogen atom, R 11 is an alkylene group which may have a substituent or have an ether bond between carbon and carbon, R 12 to R 13 are each independently a hydrogen atom or an alkyl group which may have a substituent and may have an ether bond between carbon and carbon, Two or three selected from R 8 to R 10 may be linked to each other to form a ring structure.
  • the compound represented by the above formula (1) is hydroxylamine, N-methylhydroxylamine, N-hydroxyacetamide, tert-butyl N-hydroxycarbamate, hydroxyurea, O-methylhydroxylamine, O-(
  • the compound represented by the above formula (2) is hydrazine, formohydrazide, acetohydrazide, tert-butoxycarbonylhydrazine, isonicotinic acid hydrazide, adipic acid dihydrazide, carbohydrazide, 1,1-dimethylhydrazine, 1-pyrrolidine Amine, 4-aminomorpholine, 1-aminopiperidine, 1-amino-4-methylpiperazine, thiosemicarbazide, thiocarbohydrazide, oxamic acid hydrazide, 4-methylthiosemicarbazide, aminoguanidine, 1,3-diaminoguanidine, semicarbazide, N -
  • the water-soluble nitrogen-containing compound contains a compound represented by the above formula (3) or a salt thereof, At least two of the R 8 to R 10 are groups other than hydrogen atoms, Two selected from R 8 to R 10 are linked to each other via a divalent linking group to form a ring structure, or The polishing agent according to any one of [1] to [7], wherein three of R 8 to R 10 are linked to each other via a trivalent linking group to form a ring structure.
  • the compound represented by the above formula (3) is selected from triethylenediamine, hexamethylenetetramine, quinuclidine, 3-quinuclidinol, 3-quinuclidinone, quinidine, quinine, cinchonidine, cinchonine, piperazine and 4-dimethylaminopyridine.
  • the polishing agent according to any one of [1] to [9], wherein the compound represented by the above formula (3) contains at least one selected from triethylenediamine and hexamethylenetetramine.
  • the water-soluble nitrogen-containing compound contains a compound represented by the above formula (3) or a salt thereof,
  • the above R 8 to R 10 each independently represent an alkyl group which may have a substituent or have an ether bond between carbon and carbon, and have a molecular weight (however, in the case of a salt, the formula (3)
  • the polishing agent according to any one of [1] to [10], wherein the molecular weight of only the portion shown by is 500 or less.
  • the polishing agent according to any one of [1] to [11], wherein the compound represented by the above formula (3) contains at least one selected from trimethylamine and triethylamine.
  • the water-soluble nitrogen-containing compound contains a compound represented by the above formula (3) or a salt thereof, R 8 to R 10 are each independently a hydrogen atom or a group represented by the formula (3a), provided that at least one of R 8 to R 10 is a group other than a hydrogen atom, and R 12 and R 13 is a hydrogen atom, and the molecular weight (however, in the case of a salt, the molecular weight of only the portion represented by formula (3)) is 500 or less, the polishing agent according to any one of [1] to [13].
  • the abrasive grains include at least one selected from the group consisting of silica particles, alumina particles, zirconia particles, ceria particles, titania particles, germania particles, cerium hydroxide particles, and composite particles thereof [1] [17] The polishing agent according to any one of [17]. [19] The abrasive according to any one of [1] to [18], wherein the abrasive grains include ceria particles. [20] The polishing agent according to any one of [1] to [19], wherein the content of the abrasive grains is 0.01% by mass to 10.0% by mass based on the total mass of the polishing agent.
  • the pH adjuster is selected from nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid, sodium hydroxide, potassium hydroxide, ammonium hydroxide, potassium carbonate, sodium carbonate, ammonium carbonate, monoethanolamine, diethanolamine, and triethanolamine.
  • An additive liquid for an abrasive used for polishing a surface to be polished containing resin comprising: Contains a water-soluble nitrogen-containing compound and water, An additive liquid for an abrasive, wherein the water-soluble nitrogen-containing compound contains a compound represented by the formulas (1) to (3) or a salt thereof.
  • an abrasive an additive liquid for an abrasive, and a polishing method that can polish a surface to be polished containing a resin to a high flatness at high speed.
  • the surface to be polished refers to the surface of the object to be polished, and means, for example, the surface.
  • a surface at an intermediate stage that appears in the polishing process is also included in the "surface to be polished.”
  • water-soluble means "10 mg or more is dissolved in 100 g of water at 25°C.”
  • ⁇ indicating a numerical range includes the numerical values written before and after it as the lower limit and upper limit.
  • R 1 to R 3 represents “R 1 , R 2 and R 3 ", and other symbols connected by . . . also follow this.
  • the "compound represented by formula (1)” may be referred to as “compound (1)”, and this also applies to other compounds.
  • the same symbols are not limited to those representing the same substituents, but may represent mutually different substituents within the range defined by the symbols.
  • the abrasive of the present disclosure is an abrasive for polishing a surface to be polished containing resin, and includes: Contains abrasive grains, a water-soluble nitrogen-containing compound, and water,
  • the water-soluble nitrogen-containing compound is characterized in that it contains a compound represented by the following formulas (1) to (3) or a salt thereof (hereinafter also simply referred to as a nitrogen-containing compound).
  • R 1 to R 3 each independently represent a hydrogen atom, an alkyl group that may have a substituent or an ether bond between carbons, or a hetero group that may have a substituent.
  • aryl group which may have an atom, a group represented by the following formula (2a), or a group represented by the following formula (2b),
  • Y2 is a hydrogen atom, an alkyl group that may have a substituent and may have an ether bond between carbon and carbon, an aryl group that may have a substituent and a heteroatom, A hydroxyl group or an amino group
  • R 8 to R 10 are each independently a hydrogen atom, an alkyl group which may have an aryl group, an amino group or a halogen atom as a substituent, and which may have an ether bond between carbon and carbon; or a group represented by the following formula (3a), provided that at least one of R 8 to R 10 is a group other than a hydrogen atom, R 11 is an alkylene group which may have a substituent or have an ether bond between carbon and carbon, R 12 to R 13 are each independently a hydrogen atom or an alkyl group which may have a substituent and may have an ether bond between carbon and carbon, Two or three selected from R 8 to R 10 may be linked to each other to form a ring structure.
  • the lone electron pair of the nitrogen atom contained in the nitrogen-containing compound has nucleophilicity. Therefore, in the surface layer of the surface to be polished that comes into contact with the nitrogen-containing compound, it is presumed that the nitrogen-containing compound acts on electrophilic sites in the resin, reducing the material strength of the resin. As a result, high-speed polishing is possible while suppressing the force applied to the surface to be polished and polishing scratches, and polishing with high flatness can be achieved.
  • the present polishing slurry contains at least abrasive grains, a water-soluble nitrogen-containing compound, and water, and may further contain other components as long as the effects of the present invention are achieved.
  • Each component that can be included in the polishing agent will be explained below.
  • the abrasive grains can be appropriately selected from those used as abrasive grains for CMP.
  • abrasive grains include silica particles, alumina particles, zirconia particles, cerium compound particles (e.g., ceria particles, cerium hydroxide particles), titania particles, germania particles, and core-shell type particles having these as core particles. At least one selected from the following is mentioned.
  • the silica particles include colloidal silica, fumed silica, and the like. Colloidal alumina can also be used as the alumina particles.
  • the core-shell type particles are composed of a core particle (eg, silica particle, alumina particle, zirconia particle, cerium compound particle, titania particle, germania particle) and a thin film covering the surface of the core particle.
  • the material for the thin film may be selected from oxides such as silica, alumina, zirconia, ceria, titania, germania, iron oxide, manganese oxide, zinc oxide, yttrium oxide, calcium oxide, magnesium oxide, lanthanum oxide, and strontium oxide.
  • the thin film may be formed from a plurality of nanoparticles made of these oxides.
  • the particle size of the core particles is preferably 0.01 ⁇ m to 0.5 ⁇ m, more preferably 0.03 ⁇ m to 0.3 ⁇ m.
  • the particle size of the nanoparticles need only be smaller than the particle size of the core particles, preferably 1 nm to 100 nm, more preferably 5 nm to 80 nm.
  • the thin film preferably contains silica, alumina, or a cerium compound, and more preferably contains ceria.
  • abrasive grain can be used alone or two or more types can be used in combination.
  • the content of the metal oxide (for example, silica, alumina, ceria) based on the total mass of the abrasive grains is 70% or more by mass. It is preferably 80% by mass or more, more preferably 90% by mass or more, particularly preferably 95% by mass or more, and most preferably 100% by mass. If the content of the metal oxide is 70% by mass or more with respect to the total mass of the abrasive grains, a high value can be easily obtained as the polishing rate of the resin.
  • Ceria particles can be appropriately selected from known ones and used, for example, ceria particles manufactured by the method described in JP-A-11-12561, JP-A-2001-35818, and Japanese Patent Application Publication No. 2010-505735.
  • Examples include ceria particles. Specifically, ceria particles obtained by adding an alkali to a cerium (IV) ammonium nitrate aqueous solution to create a cerium hydroxide gel, filtering, washing, and calcining it; Further examples include ceria particles obtained by pulverization and classification; ceria particles obtained by chemically oxidizing cerium (III) salt in a liquid, and the like.
  • Ceria particles may contain impurities other than ceria, but the content of ceria in one ceria particle is preferably 80% by mass or more, more preferably 90% by mass or more, even more preferably 95% or more, and 100% by mass ( (free from impurities) is most preferred. If the content of ceria in the ceria particles is 80% by mass or more, a high value can be easily obtained as the polishing rate of the resin.
  • the average particle diameter of the abrasive grains is preferably 0.01 ⁇ m to 0.5 ⁇ m, more preferably 0.03 ⁇ m to 0.3 ⁇ m.
  • the average particle diameter is 0.5 ⁇ m or less, the occurrence of polishing flaws such as scratches on the surface to be polished is suppressed.
  • the average particle diameter is 0.01 ⁇ m or more, agglomeration of abrasive grains is suppressed and the storage stability of the abrasive is excellent, and the polishing speed is also excellent.
  • the abrasive grains exist in the liquid as agglomerated particles (secondary particles) in which primary particles are aggregated, the above average particle diameter is the average secondary particle diameter.
  • the average secondary particle diameter is measured using a particle size distribution analyzer such as a laser diffraction/scattering type using a dispersion liquid dispersed in a dispersion medium such as pure water.
  • the content of the abrasive grains is preferably 0.01% by mass to 10.0% by mass, more preferably 0.05% by mass to 2.0% by mass, and 0.1% by mass based on the total mass of the abrasive. It is more preferably from 1.5% by weight, and particularly preferably from 0.15% to 1.0% by weight. If the abrasive grain content is equal to or higher than the above lower limit, an excellent polishing rate for the surface to be polished can be obtained. On the other hand, if the content ratio of abrasive grains is below the above-mentioned upper limit, the increase in viscosity of the present abrasive is suppressed, and the handleability is excellent.
  • the present polishing agent contains compounds represented by the following formulas (1) to (3) or salts thereof.
  • one type of water-soluble nitrogen-containing compound can be used alone or in combination of two or more types. However, each symbol in the formula is as described above.
  • the alkyl group in R 1 to R 3 preferably has 1 to 12 carbon atoms, more preferably 1 to 6 carbon atoms.
  • the alkyl group may be linear or may have a branched and/or ring structure. Specific examples of the alkyl group include methyl group, ethyl group, n-butyl group, tert-butyl group, and cyclohexyl group. Further, the alkyl group may have an ether bond between carbons.
  • Such a group include a methoxymethyl group, an ethoxymethyl group, a tetrahydropyryl group, and a polyether (-[(CH 2 ) n O] m -R; where n is an integer of 1 to 6 and m is 2.
  • R is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms.
  • substituents that the alkyl group may have include an aryl group that may have a heteroatom, an amino group, and a halogen atom.
  • Examples of the aryl group which may have a heteroatom include phenyl group, naphthyl group, and residues such as furan, thiophene, pyrrole, oxazole, imidazole, pyran, pyridine, and quinoline.
  • examples of the halogen atom include F, Cl, Br, I, and the like.
  • examples of the heteroatom include N, O, S, Si, and the like.
  • Examples of the aryl group for R 1 to R 3 include a phenyl group and a naphthyl group.
  • Examples of the aryl group having a hetero atom (heteroaryl group) include residues such as furan, thiophene, pyrrole, oxazole, imidazole, pyran, pyridine, and quinoline.
  • examples of substituents that the aryl group may have include an alkyl group, an amino group, a halogen atom, and the like.
  • Examples of the alkyl group as a substituent include straight chain or branched alkyl groups having 1 to 6 carbon atoms.
  • Examples of the aryl group include a phenyl group and a naphthyl group.
  • examples of the halogen atom include F, Cl, Br, I, and the like.
  • X 1 is as described above.
  • the alkyl group which may have a substituent and may have an ether bond between carbon and carbon, and the aryl group which may have a substituent and a heteroatom in Y 1 are the above-mentioned R 1 - Similar to that in R 3 .
  • the ring structure formed by connecting two selected from R 1 to R 3 to each other may be, for example, R 1 and R 2 directly connected to form one alkylene group, etc., or R 1 and R 2 It may have a linking group such as an arylene group between it.
  • the arylene group may have a heteroatom or a substituent.
  • arylene group examples include divalent residues such as benzene, naphthalene, furan, thiophene, pyrrole, oxazole, imidazole, pyran, pyridine, and quinoline.
  • Examples of the salt of the compound represented by the above formula (1) include sulfate, hydrochloride, nitrate, and the like.
  • the molecular weight of the above compound (1) is not particularly limited, but from the viewpoint of improving the resin polishing rate, it is preferably 1,000 or less, and 500 The following are more preferred.
  • compound (1) examples include hydroxylamine, N-methylhydroxylamine, N-hydroxyacetamide, tert-butyl N-hydroxycarbamate, hydroxyurea, O-methylhydroxylamine, O-(tetrahydropyran-2).
  • hydroxylamine compounds such as -yl)hydroxylamine, carboxymethoxylamine, N,O-dimethylhydroxylamine, and N,N-dimethylhydroxylamine.
  • hydroxylamine, O-methylhydroxylamine, and N,O-dimethylhydroxylamine are preferred from the viewpoint of improving the resin polishing rate.
  • X 3 in formula (2b) is the same as X 1 in formula (1a).
  • the alkylene group in R 14 preferably has 1 to 12 carbon atoms, more preferably 1 to 6 carbon atoms.
  • the alkylene group may be linear or may have a branched and/or ring structure. Specific examples of the alkylene group include a methylene group, an ethylene group, a butylene group, and the like. Further, the alkylene group may have an ether bond between carbons.
  • R 14 may be a single bond.
  • X 3 and X 4 or X 3 and N are directly bonded.
  • X 4 is the same as X 1 in the above formula (1a), or is a single bond.
  • the alkyl group, aryl group, and group represented by formula (2a) in R 15 to R 17 are the same as those in R 4 to R 7 above.
  • a ring structure formed by connecting two selected from R 4 to R 7 to each other and a ring structure formed by connecting two selected from R 15 to R 17 to each other are the above-mentioned R 1 to R 3 It is similar to the ring structure formed by connecting two selected from the following to each other, and can be applied mutatis mutandis by replacing R 1 to R 3 with R 4 to R 7 or R 15 to R 17 .
  • Examples of the salt of the compound represented by the above formula (2) include sulfate, hydrochloride, nitrate, and the like.
  • the molecular weight of the compound (2) (in the case of a salt, the molecular weight of only the part represented by formula (2) excluding the anion part) is not particularly limited, but from the viewpoint of improving the resin polishing rate, it is preferably 1,000 or less, More preferably 500 or less.
  • compound (2) examples include hydrazine, formohydrazide, acetohydrazide, tert-butoxycarbonylhydrazine, isonicotinic acid hydrazide, adipic acid dihydrazide, carbohydrazide, 1,1-dimethylhydrazine, 1-pyrrolidineamine, 4- Aminomorpholine, 1-aminopiperidine, 1-amino-4-methylpiperazine, thiosemicarbazide, thiocarbohydrazide, oxamic acid hydrazide, 4-methylthiosemicarbazide, aminoguanidine, 1,3-diaminoguanidine, semicarbazide, N-aminophthalimide, Examples include hydrazine compounds such as 2-hydrazinoethanol, isopropylhydrazine, methylhydrazine, cyclohexylhydrazine, phenylhydrazine, and 2-hydrazinopyridine.
  • R 8 to R 10 are the same as those in R 1 to R 3 above, and examples of substituents for the alkyl groups in R 8 to R 10 include an aryl group, an amino group, or a halogen atom.
  • Preferred embodiments of R 8 to R 10 are the same as those for R 1 to R 3 above.
  • R 11 in formula (3a) is the same as in R 14 above, and its preferred embodiments are also the same.
  • the alkyl groups in R 12 to R 13 are the same as those in R 1 to R 3 above, and the preferred embodiments are also the same.
  • the ring structure formed by connecting two selected from R 8 to R 10 with each other may be, for example , R 8 and R 9 directly connected to form one alkylene group, etc. 9 may have a divalent hydrocarbon group such as an arylene group as a linking group. Further, when R 8 is a group represented by the above formula (3a), R 12 and R 9 may be connected, or R 12 , R 13 , and R 9 may be connected. In this case, it may have a trivalent hydrocarbon group as a linking group.
  • the ring structure formed by connecting three selected from R 8 to R 10 to each other may be, for example, a bridged alicyclic structure in which R 8 to R 10 are directly connected, and R 8 - R 10 may have a trivalent hydrocarbon group as a linking group.
  • R 8 is a group represented by the above formula (3a)
  • R 12 , R 9 and R 10 may be connected, or R 12 , R 13 , R 9 and R 10 may be connected. good. In this case, it may have a tetravalent hydrocarbon group as a linking group.
  • Examples of the salt of the compound represented by the above formula (3) include sulfate, hydrochloride, nitrate, and the like.
  • the molecular weight of the compound (3) is not particularly limited, but from the viewpoint of improving the resin polishing rate, it is preferably 1,000 or less, More preferably 500 or less.
  • Compound (3) preferably satisfies any of the following (III-1) to (III-3) from the viewpoint of improving the resin polishing rate.
  • (III-1) At least two of the R 8 to R 10 are groups other than hydrogen atoms, Two selected from R 8 to R 10 are linked to each other via a divalent linking group to form a ring structure, or The above three R 8 to R 10 are connected to each other via a trivalent linking group to form a ring structure.
  • R 8 to R 10 are each independently an alkyl group which may have a substituent or an ether bond between carbon and carbon, and have a molecular weight (however, in the case of a salt) has a molecular weight of only the site represented by formula (3)) of 500 or less, (III-3)
  • the water-soluble nitrogen-containing compound contains a compound represented by the above formula (3) or a salt thereof, and each of R 8 to R 10 is independently a hydrogen atom or a compound represented by the above formula (3a).
  • a group represented by the formula (3) provided that at least one of R 8 to R 10 is a group other than a hydrogen atom, R 12 and R 13 are hydrogen atoms, and the molecular weight is The molecular weight of only the indicated portion is 500 or less.
  • (III-1) Specific examples of the compounds included in (III-1) above include triethylenediamine, hexamethylenetetramine, quinuclidine, 3-quinuclidinol, 3-quinuclidinone, quinidine, quinine, cinchonidine, cinchonine, piperazine, and 4-dimethylaminopyridine. Can be mentioned. Among these, triethylenediamine and hexamethylenetetramine are preferred from the viewpoint of improving the resin polishing rate.
  • Specific examples of the compound included in (III-2) above include trimethylamine, triethylamine, etc. Triethylamine is preferred from the viewpoint of improving the resin polishing rate.
  • Specific examples of the compounds included in (III-3) above include ethylene diamine, propylene diamine, butylene diamine, polyether amine, and the like. Among these, ethylenediamine and polyetheramine are preferred from the viewpoint of improving the resin polishing rate.
  • nitrogen-containing compounds include hydroxylamine, N-methylhydroxylamine, O-methylhydroxylamine, N,O-dimethylhydroxylamine, N,N-dimethylhydroxylamine, triethylenediamine, and ethylenediamine. , hexamethylenetetramine, triethylamine, 2-hydrazinoethanol, adipic acid dihydrazide, isopropylhydrazine, aminoguanidine, and salts thereof.
  • the molecular weight of the nitrogen-containing compound (excluding the anionic part in the case of a salt) is preferably 500 or less, more preferably 400 or less, and 300 or less, from the viewpoint of easy interaction with the resin on the surface to be polished. It is more preferably 200 or less, particularly preferably 150 or less.
  • the content of the nitrogen-containing compound is preferably 0.001% by mass to 10.0% by mass, more preferably 0.01% by mass to 2.0% by mass, and 0.05% by mass based on the total mass of the abrasive. % to 1.5% by mass is more preferred.
  • This abrasive contains water as a medium for dispersing the abrasive grains (A) and the metal salt (B).
  • the type of water is not particularly limited, it is preferable to use pure water, ultrapure water, ion-exchanged water, etc. in consideration of the effect on water-soluble polymers, prevention of contamination of impurities, and effect on pH, etc. .
  • the present abrasive may further contain other components within a range that achieves the effects of the present invention.
  • Other components include organic acids, pH adjusters, water-soluble polymers, anti-aggregation agents, dispersants, lubricants, viscosity-imparting agents, viscosity modifiers, preservatives, and the like.
  • the polishing agent may contain an organic acid.
  • an organic acid By containing an organic acid, the dispersibility of the abrasive grains can be improved, and a surface to be polished containing resin can be polished faster and more flatly.
  • the organic acid since the organic acid is an acidic compound, it may also have the function of a pH adjuster, which will be described later.
  • the organic acid may be in the form of an organic acid salt. Examples of the organic acid include compounds having a carboxy group, sulfo group, or phospho group as an acidic group, and ammonium salts, sodium salts, and potassium salts thereof.
  • organic acids having a carboxyl group examples include alkyl monocarboxylic acids such as formic acid, acetic acid, and propionic acid; 2-pyridinecarboxylic acid, 3-pyridinecarboxylic acid, 4-pyridinecarboxylic acid, 2,3-pyridinedicarboxylic acid, 2,4-pyridinedicarboxylic acid, 2,5-pyridinedicarboxylic acid, 2,6-pyridinedicarboxylic acid, 3,4-pyridinedicarboxylic acid, 3,5-pyridinedicarboxylic acid, pyrazinecarboxylic acid, 2,3-pyridinedicarboxylic acid, 2-quinolinecarboxylic acid, pyroglutamic acid, picolinic acid, DL-pipecolic acid, 2-furancarboxylic acid , 3-furancarboxylic acid, tetrahydrofuran-2-carboxylic acid, tetrahydrofuran-2,3,4,5-tetracarboxylic acid and other carboxylic acids having a hetero
  • Carboxylic acid having a hydroxyl group Carboxylic acids (keto acids) having a ketone group such as pyruvic acid, acetoacetic acid, and levulinic acid; Examples include dicarboxylic acids such as oxalic acid, malonic acid, succinic acid, fumaric acid, maleic acid, glutaric acid, adipic acid, and phthalic acid.
  • dicarboxylic acids such as oxalic acid, malonic acid, succinic acid, fumaric acid, maleic acid, glutaric acid, adipic acid, and phthalic acid.
  • organic acid having a carboxyl group monovalent monocarboxylic acids are preferred, and among these, the above-mentioned acetic acid, picolinic acid, cyclopentanecarboxylic acid, glycine, 2-hydroxyisobutyric acid, and pyruvic acid are more preferred.
  • the lower limit of the content of the organic acid is 0.0001% by mass, preferably 0.001% by mass, and more preferably 0.01% by mass based on the total mass of the polishing agent. If the organic acid is 0.0001% by mass or more, the upper limit of its content is 1% by mass, preferably 0.5% by mass, and 0.3% by mass based on the total mass of the polishing agent. is more preferable, 0.1% by mass is even more preferable, and 0.05% by weight is particularly preferable. If the content of the organic acid having carboxylic acid is within the above range, the surface to be polished containing the resin can be made highly flat at a higher speed.
  • the present polishing slurry may contain a pH adjuster to adjust the pH to a predetermined value.
  • the pH adjuster include, in addition to the above organic acids, inorganic acids, basic compounds, amphoteric compounds such as amino acids, and salts thereof.
  • the aforementioned "compounds represented by formulas (1) to (3) or salts thereof” may also have a pH adjusting function, but in this embodiment, they are excluded from the pH adjusting agent and treated as water-soluble nitrogen-containing compounds. Do something.
  • inorganic acids include nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid, etc., and their ammonium salts, sodium salts, potassium salts, etc. may also be used.
  • organic acid include compounds having a carboxy group, sulfo group, or phospho group as an acidic group, and ammonium salts, sodium salts, and potassium salts thereof.
  • inorganic acid nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid, and their ammonium salts, sodium salts, and potassium salts are preferred.
  • Basic compounds include, for example, ammonia, sodium hydroxide, potassium hydroxide, ammonium hydroxide, potassium carbonate, sodium carbonate, ammonium carbonate; quaternary ammonium hydroxides such as tetramethylammonium hydroxide and tetraethylammonium hydroxide. ; Examples include amino alcohols such as monoethanolamine, diethanolamine, and triethanolamine.
  • the lower limit of the pH of the polishing agent is 3.6, preferably 4.0, more preferably 4.4, even more preferably 4.8, particularly preferably 5.2, and extremely preferably 5.6. 6.0 is most preferred.
  • the pH is 3.6 or more, the surface potential of the surface to be polished is stabilized, and it becomes possible to polish the surface to be polished to a high degree of flatness at high speed.
  • the upper limit of the pH of the polishing slurry is 12.0, preferably 11.4, more preferably 10.8, even more preferably 10.2, and even more preferably 9.6 from the viewpoint of dispersibility of the abrasive particles.
  • the pH is 12.0 or less, the dispersibility of the abrasive grains will be suitable.
  • the content ratio of the pH adjuster may be appropriately adjusted so as to achieve the above pH.
  • a dispersant may be used to improve the dispersibility of the abrasive grains.
  • examples of the dispersant include anionic, cationic, nonionic, and amphoteric surfactants.
  • a cationic surfactant when using a dispersant, a cationic surfactant is preferable from the viewpoint of dispersibility of abrasive grains and improvement of resin polishing speed.
  • a cationic surfactant By using a cationic surfactant, a surface to be polished containing resin can be polished at higher speed and to a higher degree of flatness.
  • the cationic surfactant preferably contains a unit containing quaternary ammonium. By using a cationic surfactant containing quaternary ammonium, it has excellent affinity with the water-soluble nitrogen-containing compound, and a surface to be polished containing a resin can be polished more flatly at a higher speed.
  • the structure of the quaternary ammonium is not particularly limited, but from the viewpoint of high-speed polishing, it preferably includes diallyldimethylammonium, diallylmethylethylammonium, and salts thereof.
  • quaternary ammonium salts include hydrochloride, hydrobromide, acetate, sulfate, nitrate, sulfite, phosphate, amidosulfate, methanesulfonate, and ethanesulfonate. It will be done.
  • cationic surfactants include diallyldimethylammonium chloride polymer, diallyldimethylammonium chloride/sulfur dioxide copolymer, diallyldimethylammonium chloride/acrylamide copolymer, diallyldimethylammonium chloride maleic acid copolymer, Examples include maleic acid/diallyldimethylammonium ethyl sulfate/sulfur dioxide copolymer, which can be used alone or in combination of two or more.
  • the weight average molecular weight of the above-mentioned cationic surfactant is preferably 10,000 to 100,000 from the viewpoint of polishing a resin-containing surface to be polished at higher speed and with high flatness.
  • the content thereof is 0.0001% by mass to 0.00% by mass based on the total mass of the polishing agent, from the viewpoint of polishing the surface to be polished containing resin to a high flatness at a higher speed. 1% by mass is preferred.
  • the present abrasive may also contain a lubricant.
  • a lubricant is used as necessary to improve the lubricity of the abrasive and the uniformity of the polishing rate within the surface.
  • examples of lubricants include water-soluble polymers such as polyethylene glycol and polyglycerin. It will be done.
  • the method for preparing the present abrasive may be appropriately selected from methods in which the abrasive grains, the water-soluble polymer, and each component used as necessary are uniformly dispersed or dissolved in water, which is a medium.
  • a dispersion of abrasive grains and an aqueous solution of the water-soluble nitrogen-containing compound also referred to as an additive solution for abrasive
  • the dispersion liquid and the additive liquid for polishing agent are excellent in storage stability and transportation convenience.
  • the present polishing agent is prepared at the time of use by performing the above-mentioned mixing in a polishing apparatus.
  • the additive liquid for an abrasive of this embodiment is an additive liquid for preparing an abrasive by mixing with an abrasive grain dispersion as described above, and contains a water-soluble nitrogen-containing compound and water.
  • the water-soluble nitrogen-containing compound is characterized in that it contains a water-soluble nitrogen-containing compound containing a nitrogen atom having a lone pair of electrons.
  • the surface to be polished containing resin can be polished to a high flatness at high speed.
  • the additive liquid for polishing agent contains at least a water-soluble nitrogen-containing compound and water, and if necessary, further contains a water-soluble polymer, a pH adjuster, an anti-aggregation agent, a dispersant, and a lubricant. , a viscosity imparting agent, a viscosity modifier, a preservative, etc. Note that each of these components is as described above, so a description thereof will be omitted here.
  • the concentration of abrasive particles in the dispersion liquid and the water solubility in the abrasive additive liquid can be concentrated to 2 to 100 times when using the abrasive, and then diluted to a predetermined concentration before use. More specifically, for example, if the concentration of abrasive grains in the dispersion liquid and the concentration of water-soluble nitrogen-containing compounds in the additive liquid are both concentrated 10 times, 10 parts by mass of the dispersion liquid and the additive liquid for polishing agent are added. and 80 parts by mass of water are mixed and stirred to obtain a polishing agent.
  • the polishing method according to the present embodiment is a polishing method in which a surface to be polished and a polishing pad are brought into contact with each other while supplying an abrasive, and polishing is performed by relative movement between the two, wherein the polishing method according to the present embodiment is used as the polishing agent.
  • This is a method of polishing a surface containing resin using a polishing agent.
  • the polished surface to be polished is a polished surface containing resin, such as a resin surface used as an interlayer insulating film between multilayer interconnections in the manufacture of semiconductor devices.
  • the surface to be polished may be a surface made only of resin, or may contain, for example, a metal material, a stopper material, or an insulating material (excluding resin; the same applies hereinafter) in addition to resin.
  • the metal material is, for example, a wiring metal containing copper, tungsten, ruthenium, molybdenum, cobalt, etc., or a barrier metal containing titanium, tantalum, etc.
  • the stopper material is, for example, silicon nitride or polysilicon.
  • the insulating material is, for example, silicon oxide.
  • the resin examples include phenol resin, epoxy resin, acrylic resin, methacrylic resin, novolac resin, polyester resin (unsaturated polyester resin, etc.), polyimide resin, polyamideimide resin, polybenzoxazole (PBO), polyallyl ether resin,
  • resin materials such as heterocycle-containing resins (excluding the resins exemplified above).
  • heterocycle-containing resin examples include pyrrole ring-containing resins, pyridine ring-containing resins, imidazole ring-containing resins, and the like.
  • the method for forming the resin is not particularly limited, and examples thereof include vapor deposition, spin coating, and the like.
  • the shape of the resin is not particularly limited, it is, for example, a film (resin film).
  • the polishing agent according to this embodiment can also be used for polishing resin substrates.
  • FIG. 1 is a schematic diagram showing an example of a polishing apparatus.
  • the polishing apparatus 20 shown in the example of FIG. 1 includes a polishing head 22 that holds a semiconductor substrate 21 having a polished surface containing resin, a polishing surface plate 23, and a polishing pad 24 attached to the surface of the polishing surface plate 23. and an abrasive supply pipe 26 that supplies an abrasive 25 to the polishing pad 24. While supplying the polishing agent 25 from the polishing agent supply pipe 26, the surface to be polished of the semiconductor substrate 21 held by the polishing head 22 is brought into contact with the polishing pad 24, and the polishing head 22 and polishing surface plate 23 are rotated relatively. It is configured to perform polishing by movement.
  • the polishing head 22 may perform not only rotational movement but also linear movement. Further, the polishing surface plate 23 and the polishing pad 24 may have a size comparable to or smaller than the semiconductor substrate 21. In that case, it is preferable to relatively move the polishing head 22 and polishing platen 23 so that the entire surface of the semiconductor substrate 21 to be polished can be polished. Furthermore, the polishing surface plate 23 and the polishing pad 24 do not need to be rotatable, and may be belt-type, for example, that move in one direction.
  • the polishing pressure is preferably about 0.5 kPa to 50 kPa, and more preferably about 3 kPa to 40 kPa from the viewpoint of uniformity and flatness within the polished surface of the semiconductor substrate 21 at a polishing rate and prevention of polishing defects such as scratches.
  • the rotational speed of the polishing surface plate 23 and the polishing head 22 is preferably about 50 rpm to 500 rpm.
  • the temperature of the surface to be polished is preferably 30°C to 80°C, more preferably 40°C to 80°C, and even more preferably 50°C to 80°C. preferable.
  • the temperature of the surface to be polished is preferably 30°C to 80°C, more preferably 40°C to 80°C, and even more preferably 50°C to 80°C. preferable.
  • polishing pad 24 one made of nonwoven fabric, foamed polyurethane, porous resin, non-porous resin, etc. can be used.
  • the surface of the polishing pad 24 is grooved in a lattice, concentric, spiral, etc. may be applied. Further, if necessary, polishing may be performed while conditioning the surface of the polishing pad 24 by bringing a pad conditioner into contact with the surface of the polishing pad 24.
  • Polishing debris generated during polishing of a surface to be polished containing resin has good affinity with the polishing pad, and if the polishing debris remains on the polishing pad, the polishing rate may be reduced. Therefore, it is preferable to apply sufficient pad conditioning pressure, preferably about 13N to 45N, more preferably 22N to 45N, and even more preferably 40N to 45N.
  • a surface to be polished containing resin can be polished at high speed while suppressing polishing scratches.
  • Example 3 to 33, Example 35, Example 37, Example 39, and Example 41 are examples, and Examples 1 to 2, Example 34, Example 36, Example 38, and Example 40 are comparative examples.
  • polishing characteristics were measured and evaluated using a fully automatic CMP polishing device (manufactured by Applied Materials, device name: Mirra) for examples where the surface to be polished was polyimide.
  • a two-layer pad (IC-1400, K-groove, manufactured by Nitta DuPont) was used as the polishing pad, and a diamond pad conditioner (trade name: A165, manufactured by 3M) was used to condition the polishing pad.
  • the polishing conditions were as follows: the polishing pressure was 27.6 kPa, the rotation speed of the polishing surface plate was 127 rpm, and the rotation speed of the polishing head was 123 rpm. Further, the supply rate of the abrasive was 200 ml/min.
  • the surface to be polished was an epoxy resin
  • measurement and evaluation were performed using a manual CMP experimental device (manufactured by M.A.T., device name: MAT-ARW-461MII).
  • a two-layer pad (IC-1400, K-groove, manufactured by Nitta DuPont) was used as the polishing pad, and a diamond pad conditioner (CMP-MP-100A, manufactured by Asahi Diamond Industries, Ltd.) was used to condition the polishing pad.
  • the polishing conditions were as follows: the polishing pressure was 27.6 kPa, the rotation speed of the polishing surface plate was 77 rpm, and the rotation speed of the polishing head was 73 rpm. Further, the supply rate of the abrasive was 200 ml/min.
  • ⁇ Abrasive grain C> Abrasive grains mainly composed of silica particles (average secondary particle size 70 nm) were included in an amount of 0.25% by mass based on the total mass of the polishing slurry. Note that the content of silica with respect to the total mass of the abrasive grains was 95% or more.
  • polishing rate The uniformity of polishing rate within the wafer surface was used as a flatness evaluation standard. At least 40 polishing rate measurement points were taken in the diameter direction of the wafer, and when the coefficient of variation was 20% or more, the flatness was evaluated as ⁇ , and when it was less than 20%, the flatness was evaluated as ⁇ .
  • Example 1 to Example 2 ⁇ Examples where the surface to be polished is polyimide
  • Example 34 Example 36
  • the abrasive grains A ceria
  • abrasive grains B alumina
  • abrasive grains C sica
  • Example 1 and 34 this was used as an abrasive
  • Examples 2 and 36 the inorganic acids listed in Table 1 were added to use as an abrasive.
  • the content of abrasive grains was adjusted to 0.25% by mass in all abrasives, including the examples described below.
  • Example 3 to Example 33, Example 35, Example 37 Add abrasive grain A, abrasive grain B, or abrasive grain C, a water-soluble nitrogen-containing compound listed in Table 1, and an additive (dispersant, organic acid, inorganic acid) to adjust the content to the content listed in Table 1. It was used as an abrasive. However, "-" in Table 1 indicates that it was not added.
  • Example 38 ⁇ Example where the surface to be polished is epoxy resin
  • Example 40 The abrasive grains A (ceria) and the abrasive grains B (alumina) were separately dispersed in water and adjusted to have the contents shown in Table 2. In Example 40, this was used as an abrasive, and in Example 38, a dispersant and an inorganic acid listed in Table 2 were added to make an abrasive.
  • Example 39 Abrasive grain A or abrasive grain B, a water-soluble nitrogen-containing compound listed in Table 2, and an additive were added to adjust the content to the content listed in Table 2, and a pH adjuster was further added to obtain an abrasive. .
  • "-" in Table 2 indicates that it was not added.
  • Polishing device 21... Semiconductor substrate, 22... Polishing head, 23... Polishing surface plate, 24... Polishing pad, 25... Polishing agent, 26... Polishing agent supply piping.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
PCT/JP2023/030140 2022-09-07 2023-08-22 研磨剤、研磨剤用添加液および研磨方法 Ceased WO2024053390A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020257010447A KR20250060247A (ko) 2022-09-07 2023-08-22 연마제, 연마제용 첨가액 및 연마 방법
CN202380060788.2A CN119768483A (zh) 2022-09-07 2023-08-22 研磨剂、研磨剂用添加液和研磨方法
EP23862929.9A EP4585665A1 (en) 2022-09-07 2023-08-22 Polishing agent, additive solution for polishing agents and polishing method
JP2024545548A JPWO2024053390A1 (https=) 2022-09-07 2023-08-22
US19/070,728 US20250197676A1 (en) 2022-09-07 2025-03-05 Polishing agent, additive solution for polishing agent, and polishing method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2022-142276 2022-09-07
JP2022142276 2022-09-07
JP2023-030924 2023-03-01
JP2023030924 2023-03-01

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US19/070,728 Continuation US20250197676A1 (en) 2022-09-07 2025-03-05 Polishing agent, additive solution for polishing agent, and polishing method

Publications (1)

Publication Number Publication Date
WO2024053390A1 true WO2024053390A1 (ja) 2024-03-14

Family

ID=90191075

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2023/030140 Ceased WO2024053390A1 (ja) 2022-09-07 2023-08-22 研磨剤、研磨剤用添加液および研磨方法

Country Status (7)

Country Link
US (1) US20250197676A1 (https=)
EP (1) EP4585665A1 (https=)
JP (1) JPWO2024053390A1 (https=)
KR (1) KR20250060247A (https=)
CN (1) CN119768483A (https=)
TW (1) TW202411371A (https=)
WO (1) WO2024053390A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025254017A1 (ja) * 2024-06-04 2025-12-11 Ａｇｃ株式会社 研磨剤、研磨剤用添加液、研磨方法、及び、半導体部品の製造方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1112561A (ja) 1997-04-28 1999-01-19 Seimi Chem Co Ltd 半導体用研磨剤および半導体用研磨剤の製造方法
JP2001035818A (ja) 1999-07-16 2001-02-09 Seimi Chem Co Ltd 半導体用研磨剤
JP2010505735A (ja) 2006-10-09 2010-02-25 ロデイア・オペラシヨン 酸化セリウム粒子の液体懸濁物及び粉末、その製造方法並びに研磨におけるその使用
JP2016154208A (ja) * 2015-02-12 2016-08-25 旭硝子株式会社 研磨剤、研磨方法および半導体集積回路装置の製造方法
JP2016537438A (ja) * 2013-09-24 2016-12-01 キャボット マイクロエレクトロニクス コーポレイション 高分子フィルムの化学的−機械的平坦化
JP2017190413A (ja) * 2016-04-14 2017-10-19 日立化成株式会社 研磨剤、研磨剤用貯蔵液及び研磨方法
JP2018012752A (ja) 2016-07-19 2018-01-25 日立化成株式会社 研磨剤、研磨剤用貯蔵液及び研磨方法
JP2019116529A (ja) 2017-12-26 2019-07-18 ニッタ・ハース株式会社 研磨組成物、及び、研磨速度を調整する方法
WO2020262628A1 (ja) * 2019-06-27 2020-12-30 日産化学株式会社 塩基性物質を含有する水親和性の高い研磨粒子を用いた研磨用組成物
JP2022142276A (ja) 2021-03-16 2022-09-30 キオクシア株式会社 磁気記憶装置、及び磁気記憶装置の製造方法
JP2023030924A (ja) 2021-08-24 2023-03-08 株式会社三共 遊技機

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1112561A (ja) 1997-04-28 1999-01-19 Seimi Chem Co Ltd 半導体用研磨剤および半導体用研磨剤の製造方法
JP2001035818A (ja) 1999-07-16 2001-02-09 Seimi Chem Co Ltd 半導体用研磨剤
JP2010505735A (ja) 2006-10-09 2010-02-25 ロデイア・オペラシヨン 酸化セリウム粒子の液体懸濁物及び粉末、その製造方法並びに研磨におけるその使用
JP2016537438A (ja) * 2013-09-24 2016-12-01 キャボット マイクロエレクトロニクス コーポレイション 高分子フィルムの化学的−機械的平坦化
JP2016154208A (ja) * 2015-02-12 2016-08-25 旭硝子株式会社 研磨剤、研磨方法および半導体集積回路装置の製造方法
JP2017190413A (ja) * 2016-04-14 2017-10-19 日立化成株式会社 研磨剤、研磨剤用貯蔵液及び研磨方法
JP2018012752A (ja) 2016-07-19 2018-01-25 日立化成株式会社 研磨剤、研磨剤用貯蔵液及び研磨方法
JP2019116529A (ja) 2017-12-26 2019-07-18 ニッタ・ハース株式会社 研磨組成物、及び、研磨速度を調整する方法
WO2020262628A1 (ja) * 2019-06-27 2020-12-30 日産化学株式会社 塩基性物質を含有する水親和性の高い研磨粒子を用いた研磨用組成物
JP2022142276A (ja) 2021-03-16 2022-09-30 キオクシア株式会社 磁気記憶装置、及び磁気記憶装置の製造方法
JP2023030924A (ja) 2021-08-24 2023-03-08 株式会社三共 遊技機

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KIM, H. ET AL.: "Effect of Chemicals and Slurry Particles on Chemical Mechanical Polishing of Polyimide", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 39, 2000, pages 1085 - 1090, XP001048257, DOI: 10.1143/JJAP.39.1085 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025254017A1 (ja) * 2024-06-04 2025-12-11 Ａｇｃ株式会社 研磨剤、研磨剤用添加液、研磨方法、及び、半導体部品の製造方法

Also Published As

Publication number Publication date
TW202411371A (zh) 2024-03-16
EP4585665A1 (en) 2025-07-16
CN119768483A (zh) 2025-04-04
JPWO2024053390A1 (https=) 2024-03-14
US20250197676A1 (en) 2025-06-19
KR20250060247A (ko) 2025-05-07

Similar Documents

Publication Publication Date Title
JP7187770B2 (ja) 研磨剤と研磨方法、および研磨用添加液
TW201634657A (zh) 研磨劑、研磨方法及半導體積體電路裝置之製造方法
JP6435689B2 (ja) 研磨剤と研磨方法、および研磨用添加液
US20070075291A1 (en) CMP Slurry, Preparation Method Thereof and Method of Polishing Substrate Using the Same
TW201137098A (en) Polishing liquid for cmp and polishing method using the same
KR20090020709A (ko) 연마 조성물
TW201816060A (zh) 研磨劑及研磨方法、與研磨用添加液
KR20190005918A (ko) 연마액, 화학적 기계적 연마 방법
JP7809951B2 (ja) 化学機械研磨用組成物および研磨方法
TW202128946A (zh) 化學機械研磨漿料組成物和使用其研磨鎢圖案晶圓的方法
TWI814885B (zh) 化學機械研磨用水系分散體及其製造方法
US20250197676A1 (en) Polishing agent, additive solution for polishing agent, and polishing method
CN117751432A (zh) Cmp用研磨液、cmp用研磨液套组及研磨方法
US9803107B2 (en) Polishing agent, polishing method and method for manufacturing semiconductor integrated circuit device
US20250368860A1 (en) Polishing agent, polishing method, method for manufacturing semiconductor component, and additive solution for polishing agent
WO2023085007A1 (ja) 化学機械研磨用組成物および研磨方法
US20260125588A1 (en) Polishing agent, polishing method, method for manufacturing semiconductor component, additive solution for polishing agent, and method for manufacturing additive solution for polishing agent
WO2025254017A1 (ja) 研磨剤、研磨剤用添加液、研磨方法、及び、半導体部品の製造方法
WO2025013603A1 (ja) 研磨剤、研磨方法、半導体部品の製造方法、研磨剤用添加液、及び研磨剤用添加液の製造方法
TW202525967A (zh) 化學機械研磨用組成物及研磨方法
TW202504994A (zh) 研磨劑及其製造方法、研磨劑用添加液之製造方法、研磨方法、以及半導體零件之製造方法
JP2025095968A (ja) 化学機械研磨用組成物及び研磨方法
WO2024162160A1 (ja) 化学機械研磨用組成物および研磨方法
JP2025095970A (ja) 化学機械研磨用組成物及び研磨方法
TW202428838A (zh) 用於cmp金屬膜的組合物及方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23862929

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2024545548

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 202380060788.2

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 11202501192P

Country of ref document: SG

WWP Wipo information: published in national office

Ref document number: 11202501192P

Country of ref document: SG

ENP Entry into the national phase

Ref document number: 20257010447

Country of ref document: KR

Kind code of ref document: A

WWP Wipo information: published in national office

Ref document number: 202380060788.2

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 2023862929

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2023862929

Country of ref document: EP

Effective date: 20250407

WWP Wipo information: published in national office

Ref document number: 2023862929

Country of ref document: EP