WO2024046447A1 - Composition d'électroplacage de métal pour un revêtement de cuivre électrolytique et son procédé d'utilisation - Google Patents
Composition d'électroplacage de métal pour un revêtement de cuivre électrolytique et son procédé d'utilisation Download PDFInfo
- Publication number
- WO2024046447A1 WO2024046447A1 PCT/CN2023/116385 CN2023116385W WO2024046447A1 WO 2024046447 A1 WO2024046447 A1 WO 2024046447A1 CN 2023116385 W CN2023116385 W CN 2023116385W WO 2024046447 A1 WO2024046447 A1 WO 2024046447A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- copper
- acid
- metal plating
- sulfonate
- electrolytic copper
- Prior art date
Links
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 52
- 239000010949 copper Substances 0.000 title claims abstract description 52
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 239000000203 mixture Substances 0.000 title claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 35
- 239000002184 metal Substances 0.000 title claims abstract description 35
- 238000009713 electroplating Methods 0.000 title claims abstract description 32
- 239000011248 coating agent Substances 0.000 title claims abstract description 26
- 238000000576 coating method Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims description 13
- 238000007747 plating Methods 0.000 claims abstract description 44
- 239000000654 additive Substances 0.000 claims abstract description 15
- 230000000996 additive effect Effects 0.000 claims abstract description 12
- 150000001875 compounds Chemical class 0.000 claims abstract description 7
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 5
- 239000001257 hydrogen Substances 0.000 claims abstract description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 5
- 125000003710 aryl alkyl group Chemical group 0.000 claims abstract description 3
- -1 halide ion Chemical class 0.000 claims description 34
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- 239000003112 inhibitor Substances 0.000 claims description 8
- 229920001223 polyethylene glycol Polymers 0.000 claims description 8
- DNIAPMSPPWPWGF-UHFFFAOYSA-N propylene glycol Substances CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- 239000002202 Polyethylene glycol Substances 0.000 claims description 6
- 230000002378 acidificating effect Effects 0.000 claims description 6
- 150000001879 copper Chemical class 0.000 claims description 6
- 239000003792 electrolyte Substances 0.000 claims description 6
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 4
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 229920001577 copolymer Polymers 0.000 claims description 4
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 4
- 150000002148 esters Chemical class 0.000 claims description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- 229920001521 polyalkylene glycol ether Polymers 0.000 claims description 4
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 159000000000 sodium salts Chemical class 0.000 claims description 3
- WHOZNOZYMBRCBL-OUKQBFOZSA-N (2E)-2-Tetradecenal Chemical compound CCCCCCCCCCC\C=C\C=O WHOZNOZYMBRCBL-OUKQBFOZSA-N 0.000 claims description 2
- MHGUSQPDQPUNQD-UHFFFAOYSA-N 2-(2,2-disulfoethyldisulfanyl)ethane-1,1-disulfonic acid Chemical compound OS(=O)(=O)C(S(O)(=O)=O)CSSCC(S(O)(=O)=O)S(O)(=O)=O MHGUSQPDQPUNQD-UHFFFAOYSA-N 0.000 claims description 2
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 claims description 2
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 claims description 2
- FULCXPQDMXUVSB-UHFFFAOYSA-N 3-(3-sulfanylpropylsulfonyloxy)propane-1-sulfonic acid Chemical compound OS(=O)(=O)CCCOS(=O)(=O)CCCS FULCXPQDMXUVSB-UHFFFAOYSA-N 0.000 claims description 2
- WRBSVISDQAINGQ-UHFFFAOYSA-N 3-(dimethylcarbamothioylsulfanyl)propane-1-sulfonic acid Chemical group CN(C)C(=S)SCCCS(O)(=O)=O WRBSVISDQAINGQ-UHFFFAOYSA-N 0.000 claims description 2
- REEBJQTUIJTGAL-UHFFFAOYSA-N 3-pyridin-1-ium-1-ylpropane-1-sulfonate Chemical compound [O-]S(=O)(=O)CCC[N+]1=CC=CC=C1 REEBJQTUIJTGAL-UHFFFAOYSA-N 0.000 claims description 2
- OCUCCJIRFHNWBP-IYEMJOQQSA-L Copper gluconate Chemical compound [Cu+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O OCUCCJIRFHNWBP-IYEMJOQQSA-L 0.000 claims description 2
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 claims description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 2
- 239000005977 Ethylene Substances 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 claims description 2
- 229920000464 Poly(propylene glycol)-block-poly(ethylene glycol)-block-poly(propylene glycol) Polymers 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 claims description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- 229940108925 copper gluconate Drugs 0.000 claims description 2
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 2
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 2
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims description 2
- MRYMYQPDGZIGDM-UHFFFAOYSA-L copper;4-methylbenzenesulfonate Chemical compound [Cu+2].CC1=CC=C(S([O-])(=O)=O)C=C1.CC1=CC=C(S([O-])(=O)=O)C=C1 MRYMYQPDGZIGDM-UHFFFAOYSA-L 0.000 claims description 2
- RIOSFUBRIQHOMS-UHFFFAOYSA-L copper;benzenesulfonate Chemical compound [Cu+2].[O-]S(=O)(=O)C1=CC=CC=C1.[O-]S(=O)(=O)C1=CC=CC=C1 RIOSFUBRIQHOMS-UHFFFAOYSA-L 0.000 claims description 2
- ZQLBQWDYEGOYSW-UHFFFAOYSA-L copper;disulfamate Chemical compound [Cu+2].NS([O-])(=O)=O.NS([O-])(=O)=O ZQLBQWDYEGOYSW-UHFFFAOYSA-L 0.000 claims description 2
- SSOVMNXYUYFJBU-UHFFFAOYSA-L copper;ethanesulfonate Chemical compound [Cu+2].CCS([O-])(=O)=O.CCS([O-])(=O)=O SSOVMNXYUYFJBU-UHFFFAOYSA-L 0.000 claims description 2
- BSXVKCJAIJZTAV-UHFFFAOYSA-L copper;methanesulfonate Chemical compound [Cu+2].CS([O-])(=O)=O.CS([O-])(=O)=O BSXVKCJAIJZTAV-UHFFFAOYSA-L 0.000 claims description 2
- NPSDYIWFLLIHOT-UHFFFAOYSA-L copper;propane-1-sulfonate Chemical compound [Cu+2].CCCS([O-])(=O)=O.CCCS([O-])(=O)=O NPSDYIWFLLIHOT-UHFFFAOYSA-L 0.000 claims description 2
- ALVPFGSHPUPROW-UHFFFAOYSA-N dipropyl disulfide Chemical compound CCCSSCCC ALVPFGSHPUPROW-UHFFFAOYSA-N 0.000 claims description 2
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 claims description 2
- 229940098779 methanesulfonic acid Drugs 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 claims description 2
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 claims description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 229940044654 phenolsulfonic acid Drugs 0.000 claims description 2
- 229920001451 polypropylene glycol Polymers 0.000 claims description 2
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 claims description 2
- SOUPVZCONBCBGI-UHFFFAOYSA-M potassium;3-sulfanylpropane-1-sulfonate Chemical compound [K+].[O-]S(=O)(=O)CCCS SOUPVZCONBCBGI-UHFFFAOYSA-M 0.000 claims description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-O pyridinium Chemical compound C1=CC=[NH+]C=C1 JUJWROOIHBZHMG-UHFFFAOYSA-O 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 claims description 2
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 claims description 2
- PSBDWGZCVUAZQS-UHFFFAOYSA-N (dimethylsulfonio)acetate Chemical compound C[S+](C)CC([O-])=O PSBDWGZCVUAZQS-UHFFFAOYSA-N 0.000 claims 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-N ethanesulfonic acid Chemical compound CCS(O)(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-N 0.000 claims 1
- 229940044652 phenolsulfonate Drugs 0.000 claims 1
- 229940117986 sulfobetaine Drugs 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 238000007789 sealing Methods 0.000 abstract description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 239000011148 porous material Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 description 1
- SFHYNDMGZXWXBU-LIMNOBDPSA-N 6-amino-2-[[(e)-(3-formylphenyl)methylideneamino]carbamoylamino]-1,3-dioxobenzo[de]isoquinoline-5,8-disulfonic acid Chemical compound O=C1C(C2=3)=CC(S(O)(=O)=O)=CC=3C(N)=C(S(O)(=O)=O)C=C2C(=O)N1NC(=O)N\N=C\C1=CC=CC(C=O)=C1 SFHYNDMGZXWXBU-LIMNOBDPSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- XTKDAFGWCDAMPY-UHFFFAOYSA-N azaperone Chemical compound C1=CC(F)=CC=C1C(=O)CCCN1CCN(C=2N=CC=CC=2)CC1 XTKDAFGWCDAMPY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
Definitions
- the present invention relates to the technical field of metal electroplating, and in particular to an electrolytic copper coating metal electroplating composition and its application method.
- VLSI very large-scale integrated circuits
- ULSI ultra-large-scale integrated circuits
- Chip interconnection has become a key factor affecting chip performance.
- the reliability of these interconnect structures plays a very important role in the success of VLSI and ULSI and the increase in circuit density.
- shrinking size of interconnect lines in VLSI and ULSI technologies places additional demands on processing capabilities due to size limitations of circuit systems. Such requirements include the precise machining of multi-layered, high-aspect-ratio structural features.
- Throwing power is defined as the ratio of the copper deposit thickness at the center of the hole to its thickness at the surface.
- the present invention provides a method for electrolytic copper coating. Metal plating compositions.
- the present invention provides a metal plating composition for electrolytic copper coating, including a chip copper interconnect plating additive, and the chip copper interconnect plating additive is a compound selected from Formula I to Formula V,
- R1, R2 and R3 are selected from alkyl or aralkyl; R4 is selected from hydrogen or C1-C4 alkyl; k is an integer selected from 1 to 10; n is an integer selected from 1 to 20.
- R1 is selected from the following groups:
- R2 is selected from the following groups:
- R3 is selected from the following groups:
- R4 is selected from hydrogen, methyl, ethyl, propyl or butyl.
- the k is an integer selected from 5 to 8
- n is an integer selected from 3 to 6.
- the chip copper interconnect plating additive is selected from
- the concentration of the chip copper interconnect plating additive is 1-150 ppm.
- it further includes copper salt, acidic electrolyte, halide ion source, accelerator, inhibitor and water.
- the copper salt is selected from one of copper sulfate, copper halide, copper acetate, copper nitrate, copper fluoroborate, copper alkylsulfonate, copper arylsulfonate, copper sulfamate and copper gluconate. or more;
- the concentration of the copper salt is 20-100g/L.
- the copper alkyl sulfonate is selected from one or more of copper methane sulfonate, copper ethane sulfonate and copper propane sulfonate; the copper aryl sulfonate is copper phenyl sulfonate, phenol One or more of copper sulfonate and copper p-toluenesulfonate.
- the acidic electrolyte is selected from one or more of sulfuric acid, phosphoric acid, acetic acid, fluoroboric acid, sulfamic acid, alkylsulfonic acid, arylsulfonic acid and hydrochloric acid;
- the concentration of the acidic electrolyte is 1-210g/L.
- the alkylsulfonic acid is selected from one or more of methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid and trifluoromethanesulfonic acid;
- the arylsulfonic acid is selected from phenylsulfonic acid, One or more of phenol sulfonic acid and toluene sulfonic acid.
- the halide ion source is a chloride ion source; the halide ion concentration of the halide ion source is 1-80 ppm.
- the chloride ion source is one or more of copper chloride, tin chloride and hydrochloric acid; the halide ion concentration of the halide ion source is 1-70 ppm.
- it contains accelerators and inhibitors
- the accelerator is selected from N,N-dimethyl-dithiocarbamate-(3-sulfopropyl) ester, 3-mercapto-propylsulfonate-(3-sulfopropyl) ester, 3-mercapto - Sodium propyl sulfonate, sodium polydisulfide propane sulfonate, disulfide-o-ethyl carbonate-s-ester and 3-mercapto-1-propane sulfonate potassium salt, disulfide propyl disulfide , 3-(Benzothiazolyl-s-thio)propylsulfonate sodium salt, pyridinium propylsulfobetaine, 1-sodium-3-mercaptopropane-1-sulfonate, N,N-di Methyl-dithiocarbamic acid-(3-sulfoethyl ethyl) ester, 3-mercapto-ethy
- the inhibitor is selected from polypropylene glycol copolymer, polyethylene glycol copolymer, ethylene oxide-propylene oxide copolymer, stearyl polyethylene glycol ether, nonylphenol polyethylene glycol ether, octanol Polyalkylene glycol ether, octane glycol-bis-(polyalkylene glycol ether), poly(ethylene glycol-ran-propylene glycol), poly(ethylene glycol)-block-poly In (propylene glycol)-block-poly(ethylene glycol), poly(propylene glycol)-block-poly(ethylene glycol)-block-poly(propylene glycol) and butanol ethylene oxide-propylene oxide copolymers of one or more.
- the concentration of the accelerator is 1 to 90 ppm; the concentration of the inhibitor is 1 to 300 ppm.
- Another aspect of the present invention provides a method for applying the metal electroplating composition as described above in printed circuit board electroplating, wafer level packaging and integrated circuit copper interconnection electroplating processes.
- the method includes: contacting the metal plating composition with a substrate to be electroplated, and applying current to perform electroplating;
- the substrate may be a printed circuit board, a wafer level package, or an integrated circuit wafer or chip;
- the density of the current is 0.2-100ASD, and the temperature for electroplating is 10-75°C.
- the current density is 0.3-80ASD, and the electroplating temperature is 25-35°C.
- the metal plating composition can have good thermal reliability and throwing ability, and can solve the problem of hole sealing.
- “Aperture” refers to the recessed features including through holes and blind channels. It has good industrial application value.
- the metal electroplating compositions of Examples 1-30 and Comparative Examples 1-7 were prepared according to the respective components and contents described in Table 1. Just mix each component evenly. The volume of the electroplating composition after uniform mixing is 1L (contain 1L with water), and water is the balance, which is not shown in the table.
- compound A1 is:
- Compound A2 is:
- Compound P1 is:
- Compound P2 is:
- Compound B1 is:
- the patterned wafer material with the PVD seed layer as the electroplating substrate was electroplated under corresponding electroplating conditions.
- the wafer slices after electroplating were observed with SEM for the filling rate, hole condition, and Structural density and surface roughness, the results are shown in Table 2.
- the metal electroplating composition of the present invention can provide a relatively excellent electroplating effect by selecting chip copper interconnection plating additives with a specific structure: the surface of the electroplated material is smooth, the filler has no holes, and the structure is dense. Moreover, increasing the current density and plating temperature can improve the plating efficiency. However, if the temperature is too high, the plating solution will easily evaporate and the additive concentration will change. If the temperature is too low, the plating efficiency will be very low. Using the metal electroplating composition in the present invention and selecting appropriate current density and electroplating temperature can adapt to a wider range of operating conditions and have broader application prospects.
- A ampere
- °C degrees Celsius
- ppm parts per million. Unless otherwise indicated, all quantities are mass percent.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
La présente invention concerne une composition d'électroplacage de métal utilisée pour un revêtement de cuivre électrolytique, comprenant un additif d'électroplacage d'interconnexion de cuivre de puces, l'additif d'électroplacage d'interconnexion de cuivre de puces étant choisi parmi les composés de la formule I à la formule V, R1, R2 et R3 étant choisis parmi un alkyle ou un aralkyle, R4 étant choisi parmi l'hydrogène ou un alkyle en C1 à C4, k étant un nombre entier de 1 à 10, et n étant un nombre entier de 1 à 20. À l'aide de la solution technique décrite, il est possible d'obtenir des effets techniques tels que l'absence de trous et de défauts, des faibles impuretés dans le revêtement, une excellente uniformité de placage, une structure dense et une faible rugosité de surface. La composition d'électroplacage de métal peut présenter une bonne fiabilité thermique et une capacité de placage uniforme, et permet d'aborder le problème d'étanchéité des pores, présentant ainsi une valeur d'application industrielle significative.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211070477.8 | 2022-09-02 | ||
| CN202211070477.8A CN117684222A (zh) | 2022-09-02 | 2022-09-02 | 一种用于电解铜涂层的金属电镀组合物及其应用方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2024046447A1 true WO2024046447A1 (fr) | 2024-03-07 |
Family
ID=90100436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2023/116385 WO2024046447A1 (fr) | 2022-09-02 | 2023-09-01 | Composition d'électroplacage de métal pour un revêtement de cuivre électrolytique et son procédé d'utilisation |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN117684222A (fr) |
| TW (1) | TW202411476A (fr) |
| WO (1) | WO2024046447A1 (fr) |
Citations (8)
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|---|---|---|---|---|
| GB1199494A (en) * | 1966-08-20 | 1970-07-22 | Schering Ag | Acidic Electrolytes for Depositing Shiny, Level Copper Coatings. |
| CN1733978A (zh) * | 2004-07-22 | 2006-02-15 | 罗门哈斯电子材料有限公司 | 匀涂剂化合物 |
| TW201305395A (zh) * | 2011-07-29 | 2013-02-01 | Nat Univ Chung Hsing | 微孔填充之電鍍銅系統、電鍍液、及填孔配方 |
| CN108026656A (zh) * | 2015-09-25 | 2018-05-11 | 韩国生产技术研究院 | 包含两种整平剂的电镀铜用有机添加剂以及包含该添加剂的电镀铜液 |
| CN108350590A (zh) * | 2016-03-18 | 2018-07-31 | 韩国生产技术研究院 | 用于形成高平整度镀铜膜的电镀铜用有机添加剂及包含该添加剂的电镀铜液 |
| US20190367522A1 (en) * | 2017-07-25 | 2019-12-05 | Shanghai Sinyang Semiconductor Materials Co., Ltd. | Leveling agent, metal plating composition containing same, preparation method therefor and use thereof |
| CN112760683A (zh) * | 2020-12-21 | 2021-05-07 | 上海新阳半导体材料股份有限公司 | 一种芯片铜互连电镀添加剂、其制备方法和应用 |
| CN114277413A (zh) * | 2021-12-29 | 2022-04-05 | 广东利尔化学有限公司 | 一种用于电路板的铜镀敷液 |
-
2022
- 2022-09-02 CN CN202211070477.8A patent/CN117684222A/zh active Pending
-
2023
- 2023-09-01 WO PCT/CN2023/116385 patent/WO2024046447A1/fr unknown
- 2023-09-01 TW TW112133279A patent/TW202411476A/zh unknown
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1199494A (en) * | 1966-08-20 | 1970-07-22 | Schering Ag | Acidic Electrolytes for Depositing Shiny, Level Copper Coatings. |
| CN1733978A (zh) * | 2004-07-22 | 2006-02-15 | 罗门哈斯电子材料有限公司 | 匀涂剂化合物 |
| TW201305395A (zh) * | 2011-07-29 | 2013-02-01 | Nat Univ Chung Hsing | 微孔填充之電鍍銅系統、電鍍液、及填孔配方 |
| CN108026656A (zh) * | 2015-09-25 | 2018-05-11 | 韩国生产技术研究院 | 包含两种整平剂的电镀铜用有机添加剂以及包含该添加剂的电镀铜液 |
| CN108350590A (zh) * | 2016-03-18 | 2018-07-31 | 韩国生产技术研究院 | 用于形成高平整度镀铜膜的电镀铜用有机添加剂及包含该添加剂的电镀铜液 |
| US20190367522A1 (en) * | 2017-07-25 | 2019-12-05 | Shanghai Sinyang Semiconductor Materials Co., Ltd. | Leveling agent, metal plating composition containing same, preparation method therefor and use thereof |
| CN112760683A (zh) * | 2020-12-21 | 2021-05-07 | 上海新阳半导体材料股份有限公司 | 一种芯片铜互连电镀添加剂、其制备方法和应用 |
| CN114277413A (zh) * | 2021-12-29 | 2022-04-05 | 广东利尔化学有限公司 | 一种用于电路板的铜镀敷液 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117684222A (zh) | 2024-03-12 |
| TW202411476A (zh) | 2024-03-16 |
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