WO2024024086A1 - Émetteur optique - Google Patents

Émetteur optique Download PDF

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Publication number
WO2024024086A1
WO2024024086A1 PCT/JP2022/029294 JP2022029294W WO2024024086A1 WO 2024024086 A1 WO2024024086 A1 WO 2024024086A1 JP 2022029294 W JP2022029294 W JP 2022029294W WO 2024024086 A1 WO2024024086 A1 WO 2024024086A1
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WIPO (PCT)
Prior art keywords
substrate
light
output
laser
optical
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PCT/JP2022/029294
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English (en)
Japanese (ja)
Inventor
明晨 陳
隆彦 進藤
慈 金澤
Original Assignee
日本電信電話株式会社
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Priority to PCT/JP2022/029294 priority Critical patent/WO2024024086A1/fr
Publication of WO2024024086A1 publication Critical patent/WO2024024086A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters

Definitions

  • the present invention relates to an optical transmitter.
  • Electroabsorption modulator integrated DFB (EADFB) lasers have higher extinction characteristics and better chirp characteristics than directly modulated lasers, so they have been used in a wide range of applications including light sources for access networks. I've been exposed to it.
  • FIG. 7 shows the configuration of a general EADFB laser.
  • a DFB laser 221 and an EA modulator 222 are integrated into the same chip.
  • the DFB laser 221 includes an active layer 203 made of a multiple quantum well (MQW), and oscillates at a single wavelength using a diffraction grating 207 formed within a resonator.
  • the EA modulator 222 has a light absorption layer 204 made of MQW.
  • the active layer 203 and the light absorption layer 204 are sandwiched between the light confinement layer 202 and the light confinement layer 205, and have a Separate Confined Heterostructure (SCH) structure. Further, these are sandwiched between a lower cladding layer 201 and an upper cladding layer 206.
  • An electrode 211 is formed on the upper cladding layer 206 of the DFB laser 221. Further, an electrode 212 is formed on the upper cladding layer 206 of the EA modulator 222.
  • the output light from the DFB laser 221 is quenched by light absorption, thereby converting the electrical signal into an optical signal.
  • the electrical signal is converted into an optical signal by driving the EA modulator 222 under transmission/absorption conditions to flicker the output light from the DFB laser 221.
  • a problem with this EADFB laser is that the EA modulator involves large optical loss, making it difficult to increase the output.
  • AXEL SOA Assisted Extended Reach EADFB Laser
  • SOA semiconductor optical amplifier
  • AXEL the signal light oscillated by the DFB laser 221 and modulated by the EA modulator 222 is amplified by the integrated SOA 224, so high output is possible.
  • the SOA 224 also has an SCH structure in which the active layer 209 is sandwiched between the optical confinement layer 202 and the optical confinement layer 205. Further, these are sandwiched between a lower cladding layer 201 and an upper cladding layer 206. An electrode 213 is formed on the upper cladding layer 206 of the SOA 224 .
  • AXEL provided with the SOA 224, high output characteristics approximately twice as high as those of a general EADFB laser can be obtained.
  • AXEL is capable of highly efficient operation due to the integration effect of SOA, it is possible to reduce power consumption by approximately 40% when driven under operating conditions that provide the same optical output as a general EADFB laser. be.
  • AXEL can use the same MQW structure as DFB laser for the active layer of SOA. Therefore, the device can be manufactured using the same manufacturing process as a conventional EADFB laser without adding a regrowth process for integrating the SOA region.
  • the injection current is controlled in order to prevent the output power from changing over time. This control is achieved by monitoring part of the output power.
  • the light-emitting device that contributes to the output power is the laser section, so to monitor this output, you can monitor the front output, and also monitor the rear leakage light. You may do so.
  • the present invention has been made to solve the above-mentioned problems, and provides a PD for monitoring the forward output of a laser integrated with a modulator and a semiconductor optical amplifier without being restricted by design.
  • the purpose is to make it possible.
  • An optical transmitter includes: a waveguide type laser formed on a substrate; a waveguide type electroabsorption modulator formed on the substrate continuously from the laser in the waveguide direction; A waveguide-type semiconductor optical amplifier is formed on the substrate and amplifies the output light output from the electro-absorption modulator, and a waveguide-type semiconductor optical amplifier is formed on one end of the substrate and outputs the output light from the semiconductor optical amplifier.
  • a condensing section that is formed on the substrate and uses multimode interference to condense the reflected light reflected toward the substrate at the output end, and a photodiode that monitors the condensed light condensed by the condensing section.
  • the output light output from the semiconductor optical amplifier is incident obliquely to the output end.
  • the modulator and the semiconductor optical amplifier are integrated, since the present invention includes a condensing section that condenses the reflected light that is output from the semiconductor optical amplifier and reflected on the substrate side at the output end.
  • a PD for monitoring the forward output of the laser can be provided without being restricted by the design.
  • FIG. 1 is a plan view showing the configuration of an optical transmitter according to Embodiment 1 of the present invention.
  • FIG. 2A shows a state of an equivalent linear optical system in which light 131 emitted from the semiconductor optical amplifier 104, reflected at the output end 105, and incident on the condenser 106 is replaced by light traveling along the optical axis. It is a diagram.
  • FIG. 2B is an explanation showing the state of an equivalent linear optical system in which light 131 emitted from the semiconductor optical amplifier 104, reflected at the output end 105, and incident on the condenser 106 is replaced by light traveling along the optical axis. It is a diagram.
  • FIG. 2A shows a state of an equivalent linear optical system in which light 131 emitted from the semiconductor optical amplifier 104, reflected at the output end 105, and incident on the condenser 106 is replaced by light traveling along the optical axis. It is a diagram.
  • FIG. 2A shows a state of an equivalent linear optical system in which
  • FIG. 3 is a characteristic diagram showing the results of an optical waveguide simulation of the coupling efficiency from the SM optical waveguide 132 to the SM optical waveguide 133 shown in a linear optical system.
  • FIG. 4 is a characteristic diagram showing the results of an optical propagation simulation when the light condensing section 106 is introduced.
  • FIG. 5 is a plan view showing the configuration of an optical transmitter according to Embodiment 2 of the present invention.
  • FIG. 6 is a plan view showing the configuration of an optical transmitter according to Embodiment 3 of the present invention.
  • FIG. 7 is a cross-sectional view showing the configuration of a general EADFB laser.
  • FIG. 8 is a cross-sectional view showing the configuration of AXEL.
  • This optical transmitter includes a waveguide type laser 102 formed on a substrate 101, a waveguide type electro-absorption modulator (EA modulator) 103, and a waveguide type semiconductor optical amplifier 104. .
  • EA modulator electro-absorption modulator
  • the EA modulator 103 is formed on the substrate 101 so as to be continuous with the laser 102 in the waveguide direction.
  • the semiconductor optical amplifier 104 amplifies the output light output from the EA modulator 103.
  • the output light output from the semiconductor optical amplifier 104 is output to the outside from an output end 105 formed at one end of the substrate 101.
  • the output light output from the semiconductor optical amplifier 104 enters the output end 105 obliquely.
  • the substrate 101 is rectangular in plan view, and one of the short sides facing each other is the output end 105.
  • the laser 102 and the EA modulator 103 are formed in a state in which a waveguide structure extends in a direction parallel to the long side of the substrate 101 which is rectangular in plan view, and the waveguide direction is directed toward the output end 105. It is in a vertical state.
  • the laser 102 may be a distributed feedback (DFB) laser.
  • the laser 102 and the EA modulator 103 have the same structure as the EADFB laser described using FIGS. 7 and 8.
  • the laser 102 includes an active layer made of a multiple quantum well (MQW), and oscillates at a single wavelength using a diffraction grating formed within a resonator.
  • the EA modulator 103 has a light absorption layer 204 made of MQW.
  • the active layer of the laser 102 and the light absorption layer of the EA modulator 103 are sandwiched between two optical confinement layers (not shown) on the upper and lower sides when viewed from the substrate 101, forming a separate confinement heterostructure. Although not shown, these are sandwiched between a lower cladding layer and an upper cladding layer. Electrodes (not shown) are formed on the upper cladding layer of the laser 102 and on the upper cladding layer of the EA modulator 103, respectively.
  • the semiconductor optical amplifier 104 also includes an active layer, and the upper and lower parts of the active layer are sandwiched between two optical confinement layers, forming a separate confinement heterostructure. Further, although not shown, these are sandwiched between a lower cladding layer and an upper cladding layer, and an electrode is formed on the upper cladding layer.
  • This example includes a bent optical waveguide 108 that optically connects the EA modulator 103 and the semiconductor optical amplifier 104.
  • the laser 102 and the EA modulator 103 have their waveguide directions perpendicular to the output end 105 , but the bent optical waveguide 108 makes the waveguide direction of the semiconductor optical amplifier 104 not perpendicular to the output end 105 . It is in a diagonal state.
  • This optical transmitter also includes a condensing section 106 that is formed on the substrate 101 and condenses the reflected light reflected toward the substrate 101 at the output end 105 by multimode interference.
  • the condensing unit 106 condenses the reflected light that is output from the semiconductor optical amplifier 104 and obliquely enters the output end 105 and is reflected at the output end 105 toward the substrate 101 side.
  • the light condensing section 106 is constituted by an optical waveguide having a flat core, the core width of which is larger than the core thickness when viewed in cross section.
  • a window structure 111 in which a waveguide structure is not formed is provided between the output end 105 and the output end of the semiconductor optical amplifier 104.
  • this optical transmitter includes a photodiode 107 that monitors the condensed light condensed by the condensing section 106.
  • the photodiode 107 is of a waveguide type, and is formed on the substrate 101 in a region on the opposite side of the output end 105 when viewed from the light condensing section 106.
  • the photodiode 107 is optically connected to the output optical waveguide 106a of the light condensing section 106.
  • a notch 109 is provided in the substrate 101 on the light emission side of the photodiode 107.
  • a window structure 112 in which no waveguide structure is formed is provided between the notch 109 and the output end of the photodiode 107.
  • the substrate 101 can be formed into a rectangular shape in plan view, with one side (on the upper side of the paper in FIG.
  • a laser 102, an EA modulator 103, and a semiconductor optical amplifier 104 can be arranged on the side (side).
  • the light condensing unit 106 is arranged on the other side (the lower side of the paper in FIG. 1) that is in contact with the side of one end (output end 105) of the rectangular substrate 101 in plan view from the center of the substrate 101. be able to.
  • a notch 109 can be formed at the end of the substrate 101 on the other side at a location on the light output side of the photodiode 107.
  • a lower optical confinement layer is formed on the substrate 101.
  • the substrate 101 can be made of n-type InP.
  • the lower optical confinement layer can be formed by depositing (crystal growth) non-doped i-InGaAsP using a known metal organic chemical vapor deposition (MOCVD) method.
  • MOCVD metal organic chemical vapor deposition
  • an MQW that will become the active layer of the laser 102 and the semiconductor optical amplifier 104 is formed on the lower optical confinement layer.
  • an MQW can be formed by crystal-growing multiple layers of non-doped i-InGaAsP as well layers and InGaAsP as barrier layers alternately by MOCVD.
  • the well layer can have a thickness of about 15 nm
  • the barrier layer can have a thickness of about 8 nm, for example.
  • a diffraction grating is formed on the active layer of the laser 102.
  • a DFB laser can be obtained by forming a diffraction grating directly above the active layer and using this region as a resonator. Note that by forming diffraction gratings at two positions sandwiching the active layer region in the waveguide direction, a distributed reflection type (Distributed Bragg Reflector: DBR) can be achieved.
  • DBR distributed Bragg Reflector
  • an MQW that will become the light absorption layer is formed in the region that will become the EA modulator 103 by crystal regrowth.
  • An MQW as a light absorption layer can be formed by alternately growing multiple layers of undoped i-InGaAsP as a well layer and InGaAsP as a barrier layer in a composition ratio different from that of the active layer.
  • the MQW serving as the light absorption layer and the active layer in the region of the laser 102 that has already been formed are formed in a butt-joint state. Further, an MQW layer serving as a light absorption layer is also formed in a region to be used as a photodiode 107.
  • InGaAsP which is to be used as a core layer, is formed by crystal regrowth in the region to be the bent optical waveguide 108.
  • the core layer is formed so as to be butt-jointed with the active layer and the light absorption layer in the region of the semiconductor optical amplifier 104 that have already been formed.
  • a core layer made of InGaAsP is also formed in a region to be the light condensing section 106 (output optical waveguide 106a).
  • an upper optical confinement layer made of i-InGaAsP and an upper cladding layer made of p-InP are formed to realize optical confinement in the vertical (vertical) direction when viewed from the substrate 101. Further, a contact layer made of, for example, p + -InGaAsP can also be formed on the upper cladding layer.
  • Optical waveguide structure channel type optical waveguide structure with a high mesa structure of a predetermined width, consisting of a cladding layer, a lower optical confinement layer, an active layer, an optical absorption layer, a core layer, an upper optical confinement layer, an upper cladding layer, and a contact layer. form.
  • an optical waveguide structure having a mesa structure is also formed in the region to be the photodiode 107 using the above-mentioned selective etching mask.
  • the core layer made of InGaAsP remains in the region that is to be the light condensing section 106 (output optical waveguide 106a), which is wider than the region that is to be the light condensing section 106 in plan view.
  • the selective etching mask used as the selective growth mask is removed, a new selective etching mask is formed, and the core layer remaining in the region to be the light condensing part 106 is selectively removed, thereby forming the light condensing part 106.
  • a mesa shape (output optical waveguide 106a) is formed.
  • a protective layer made of an insulating material such as SiO 2 is formed on the mesa-shaped surface of the formed light condensing section 106 (output optical waveguide 106a).
  • a protective layer made of an insulating material such as SiO 2 is formed on the mesa-shaped surface of the formed light condensing section 106 (output optical waveguide 106a).
  • the contact layer between the regions is removed, and then electrodes are formed in each region. . Thereafter, chipping by cleavage, formation of an anti-reflection (AR) film 114, and formation of a high reflection (HR) film 115 are performed.
  • the HR film 115 is formed on the end (end surface) of the substrate 101 opposite to the output end 105 . Note that, hereinafter, the end of the substrate 101 on which the HR film 115 is formed, on the opposite side from the output end 105, will be referred to as the rear end.
  • a laser 102 is driven by a constant current to emit continuous wave (CW) oscillation, and by modulating the voltage applied to an EA modulator 103, the light absorption is modulated and the intensity of the light is modulated. Achieves modulation.
  • the semiconductor optical amplifier 104 amplifies the output light of the EA modulator 103 in order to compensate for the insertion loss of the absorption type EA modulator 103.
  • the reflected light from the output end 105 is also amplified, so it is said that a general AXEL is easily affected by the reflected return light.
  • a bent optical waveguide 108 is inserted between the EA modulator 103 and the semiconductor optical amplifier 104, and end face incidence (oblique incidence) with an angle at the output end 105 is realized.
  • the reflected return light at the output end 105 is suppressed more than in the case of only the AR film 114.
  • a window structure 111 is provided immediately in front of the output end 105 in which the optical waveguide structure disappears for a certain period in both the horizontal and vertical directions, and by utilizing light diffusion, return light can be further suppressed.
  • the main output light of this optical transmitter passes through a lens focusing optical system and an isolator placed in front of the output end 105, and is coupled to an optical fiber.
  • an optical element for partially extracting the light is inserted within the section of the condensing optical system.
  • packages that accommodate modulated lasers have become smaller, and the physical length of fiber-coupled systems has become shorter.
  • the optical transmitter according to the first embodiment includes a photodiode 107 on a substrate 101. Due to oblique incidence at the output end 105, a slight amount of reflected light from the AR film 114 is reflected into the substrate 101 in a direction different from that of the semiconductor optical amplifier 104. Furthermore, since the light is diffused by the window structure 111, for example, when a light absorption layer of a photodiode (PD) is provided in the substrate 101 and the photocurrent in the light absorption layer is monitored, the light is diffused vertically. In this direction, there is little overlap between the light absorption layer and the diffused light, resulting in low absorption efficiency.
  • PD photodiode
  • the width of the light absorption layer is increased in order to absorb more of this diffused light.
  • a reverse bias is always applied to the monitor PD, and dark current is generated as noise.
  • the area of the monitor PD becomes large, the resistance at the pn junction in the light absorption layer decreases, so the dark current increases, and if the intensity of the target light to be monitored is low, it will be buried in noise.
  • a condensing section 106 is introduced to condense horizontally diverging light.
  • the degree of freedom is low.
  • optical monitoring within the substrate 101 is realized by condensing light by the condenser 106 using multimode interference (MMI).
  • MMI multimode interference
  • FIG. 1 shows a side view
  • FIG. 2B shows a top view
  • light 131 is diffused in the XY axis directions.
  • a semiconductor optical amplifier 104 serving as a single mode (SM) optical waveguide is placed ahead of the window structure 111.
  • this also has the structure of an SM optical waveguide in the XZ plane.
  • the coupling efficiency from the SM optical waveguide 132 to the opposing SM optical waveguide 133 via the window structure 111 is the result of an optical waveguide simulation. As shown by the black square in , it is 9% when the length of the window structure 111 (window structure length) is 10 ⁇ m.
  • a light condensing section 106 is arranged instead of a single mode optical waveguide, and in the X-axis direction, reflection by the side wall of the condensing section 106 and optical interference are arranged. This makes it possible to condense light and efficiently couple it to the SM optical waveguide 133.
  • FIG. 4 shows the results of an optical propagation simulation when the light condensing section 106 is introduced. According to the optical propagation shown in the simulation results, as shown by the black circles in FIG. 3, it is possible to improve the coupling efficiency to 14% for the same window structure length of 10 ⁇ m.
  • the wavelength of the laser is 1310 nm
  • the condensing section 106 is a passive optical waveguide whose core layer is made of InGaAsP material and has a refractive index of 3.4.
  • the thickness of the core layer is 300 nm.
  • the cladding material is InP and has a refractive index of 3.2.
  • the designed physical length of the window structure 111 is 10 ⁇ m, and the distance from the output end of the semiconductor optical amplifier 104 to the start portion (input end) of the light condensing section 106 is 20 ⁇ m, which is twice the length of the window structure 111. Become.
  • the width of the core layer of the light condensing section 106 is 8 ⁇ m and the length is 300 ⁇ m.
  • the mesa width of the waveguide structure of the laser 102, EA modulator 103, and semiconductor optical amplifier 104 is 1 ⁇ m.
  • the inclination of the output end 105 of the semiconductor optical amplifier 104 in the waveguide direction with respect to the plane is 5 degrees.
  • the inclination of the output end 105 of the light condensing section 106 in the waveguide direction with respect to the plane was set to -10 degrees.
  • the displacement of the optical axis in the X direction when propagating from the output end of the semiconductor optical amplifier 104 to the output end 105 is about 1 ⁇ m.
  • the center of the optical waveguide of the light collecting section 106 was further offset by 4 ⁇ m in the X direction. Therefore, light enters the light condensing section 106 from a location shifted from the center of the light condensing section 106 .
  • the core width of the output optical waveguide 106a connected to the light condensing section 106 is 2.6 ⁇ m.
  • the manufacturing length of the window structure 111 is determined by the precision of the cleavage inclination. In reality, the length of the window structure 111 varies by about several ⁇ m. If the window structure 111 is made shorter than the design as a result of manufacturing, the results shown in FIG. 4 show that the coupling efficiency improves when the SM optical waveguides are opposed to each other. When the window structure length is shorter than 8 ⁇ m, the coupling efficiency of the SM optical waveguides facing each other is higher than that of the present invention. However, it is not preferable for the window structure 111 to become short because it weakens the suppression of return light for the semiconductor optical amplifier 104.
  • a photodiode 107 having an optical waveguide structure is optically connected to the tip of the output optical waveguide 106a of the light condensing section 106.
  • the light absorption layer of the photodiode 107 can be formed by leaving the light absorption layer of the EA modulator 103 or the active layer of the laser 102 or semiconductor optical amplifier 104 during these mesa processing processes, thereby eliminating the need for additional processes. It can be made to
  • the optical waveguide structure (mesa structure) in the condensing section 106 can be formed by performing additional dry etching after the high mesa embedding process of the laser 102, EA modulator 103, and semiconductor optical amplifier 104. can.
  • the optical waveguide structure (mesa structure) in the light condensing section 106 is not buried, and in the horizontal direction, optical confinement is achieved by the interface between air and the semiconductor via the protective layer.
  • the photodiode 107 can also have a so-called ridge optical waveguide structure.
  • the notch 109 is preferably located at a location away from the rear end of the substrate 101 where the HR film 115 is formed. This is to prevent the HR film from being formed on the oblique sides of the notch 109.
  • This optical transmitter includes a waveguide type laser 102 formed on a substrate 101, an EA modulator 103, and a waveguide type semiconductor optical amplifier 104. It also includes a bent optical waveguide 108 that optically connects the EA modulator 103 and the semiconductor optical amplifier 104. Further, an AR film 114 is formed on the output end 105 of the substrate 101, an HR film 115 is formed on the rear end of the substrate 101, and a window structure 111 is provided in front of the output end 105 of the substrate 101. . It also includes a light condensing section 106 (output optical waveguide 106a) and a notch 109. These are the same as in the first embodiment described above.
  • Embodiment 2 is a photodiode that monitors external output light 134 that is collected by a light collection unit 106, guided through an output optical waveguide 106a, passed through a window structure 112, and exited from an oblique side surface of a notch 109. 107'.
  • the substrate 101 can be formed into a rectangular shape in plan view, with one side (on the upper side of the paper in FIG.
  • a laser 102, an EA modulator 103, and a semiconductor optical amplifier 104 can be arranged on the side (side).
  • the light condensing unit 106 is arranged on the other side (the lower side of the paper in FIG. 1) that is in contact with the side of one end (output end 105) of the rectangular substrate 101 in plan view from the center of the substrate 101. be able to.
  • a notch 109 can be formed at the end of the substrate 101 on the other side at a location on the light output side of the light condensing section 106 (output optical waveguide 106a).
  • This optical transmitter includes a waveguide type laser 102 formed on a substrate 101, an EA modulator 103, and a waveguide type semiconductor optical amplifier 104. It also includes a bent optical waveguide 108 that optically connects the EA modulator 103 and the semiconductor optical amplifier 104. Further, an AR film 114 is formed on the output end 105 of the substrate 101, an HR film 115 is formed on the rear end of the substrate 101, and a window structure 111 is provided in front of the output end 105 of the substrate 101. . It also includes a light condensing section 106 (output optical waveguide 106a). These are the same as in the first embodiment described above.
  • the configuration is such that the light emitted from the photodiode 107 that monitors the condensed light condensed by the condensing section 106 is incident perpendicularly to the side of the rear end (end) of the substrate 101.
  • the output optical waveguide 106a is provided with a bent portion 161, and the waveguide direction of the output optical waveguide 106a is changed in a plane parallel to the plane of the substrate 101 to a direction perpendicular to the rear end side of the substrate 101.
  • the light condensing section that condenses the reflected light that is output from the semiconductor optical amplifier and reflected on the substrate side at the output end, allows the modulator and the semiconductor optical amplifier to It becomes possible to provide a PD for monitoring the forward output of the integrated laser without being restricted by the design.
  • EA modulator Electro-absorption modulator

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
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Abstract

Cet émetteur optique comprend un laser de type guide d'ondes (102) formé sur un substrat (101), un modulateur EA de type guide d'ondes (103), et un amplificateur optique à semi-conducteurs de type guide d'ondes (104) et comprend une unité de condensation (106) qui utilise une interférence multimode pour condenser la lumière réfléchie qui a été émise par l'amplificateur optique à semi-conducteurs (104), a été rendue incidente obliquement par rapport à une extrémité de sortie (105), et a été réfléchie par l'extrémité de sortie (105) vers le côté substrat (101). L'unité de condensation (106) est formée à partir d'un guide d'ondes optique constitué d'un noyau plat ayant la largeur de noyau plus grande que l'épaisseur de noyau lorsqu'il est vu en coupe transversale.
PCT/JP2022/029294 2022-07-29 2022-07-29 Émetteur optique WO2024024086A1 (fr)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017135381A1 (fr) * 2016-02-04 2017-08-10 日本電信電話株式会社 Émetteur optique et procédé de surveillance d'intensité lumineuse
WO2019059066A1 (fr) * 2017-09-19 2019-03-28 日本電信電話株式会社 Élément intégré optique à semi-conducteur
WO2021097560A1 (fr) * 2019-11-18 2021-05-27 Electrophotonic-Ic Inc. Lasers modulés par électro-absorption intégrés verticalement et procédés de fabrication

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017135381A1 (fr) * 2016-02-04 2017-08-10 日本電信電話株式会社 Émetteur optique et procédé de surveillance d'intensité lumineuse
WO2019059066A1 (fr) * 2017-09-19 2019-03-28 日本電信電話株式会社 Élément intégré optique à semi-conducteur
WO2021097560A1 (fr) * 2019-11-18 2021-05-27 Electrophotonic-Ic Inc. Lasers modulés par électro-absorption intégrés verticalement et procédés de fabrication

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