WO2024004872A1 - 炭化珪素単結晶基板の処理方法、炭化珪素単結晶基板処理システム、及び補充液 - Google Patents

炭化珪素単結晶基板の処理方法、炭化珪素単結晶基板処理システム、及び補充液 Download PDF

Info

Publication number
WO2024004872A1
WO2024004872A1 PCT/JP2023/023381 JP2023023381W WO2024004872A1 WO 2024004872 A1 WO2024004872 A1 WO 2024004872A1 JP 2023023381 W JP2023023381 W JP 2023023381W WO 2024004872 A1 WO2024004872 A1 WO 2024004872A1
Authority
WO
WIPO (PCT)
Prior art keywords
single crystal
silicon carbide
crystal substrate
carbide single
acid
Prior art date
Application number
PCT/JP2023/023381
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
朝逸 呉
英一 志村
幸久 和田
Original Assignee
東京応化工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京応化工業株式会社 filed Critical 東京応化工業株式会社
Priority to EP23831314.2A priority Critical patent/EP4539106A1/en
Priority to JP2024530779A priority patent/JPWO2024004872A1/ja
Priority to KR1020247041857A priority patent/KR20250028270A/ko
Publication of WO2024004872A1 publication Critical patent/WO2024004872A1/ja

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/32—Anodisation of semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments

Definitions

  • the present invention relates to a silicon carbide single crystal substrate processing method, a silicon carbide single crystal substrate processing system, and a replenisher.
  • SiC silicon carbide
  • Si silicon
  • a smooth semiconductor substrate with a desired thickness is required.
  • Such a substrate is manufactured by processing such as polishing and etching.
  • Silicon carbide single crystal substrates for such uses require high processing accuracy in terms of substrate flatness, substrate surface smoothness, and the like.
  • silicon carbide generally has high hardness and excellent corrosion resistance, the processability when producing such a substrate is poor, and it is difficult to obtain a silicon carbide single crystal substrate with high processing accuracy.
  • silicon carbide single crystal substrates are oxidized in batches at 800 to 1200°C for 1 to 5 hours by thermal oxidation on both sides of the silicon carbide single crystal substrate, and silicon carbide single crystal substrates are oxidized by O 2 plasma treatment at 100 to 300°C. Methods such as oxidizing crystal substrates are being considered.
  • Patent Document 1 proposes a method of processing a silicon carbide single crystal substrate by electrolytic etching using hydrofluoric acid (HF) as an electrolyte.
  • Patent Document 2 proposes a method of processing a silicon carbide single crystal substrate by electrochemical etching or photoelectrochemical etching using an etching solution containing hydrofluoric acid, nitric acid, and a surfactant.
  • Patent Document 3 proposes a method of processing a silicon carbide single crystal substrate by photoelectrochemical etching using an etching solution containing hydrofluoric acid and nitric acid while irradiating light of a specific wavelength and specific intensity.
  • the present invention has been made in view of the above circumstances, and provides a method for processing a silicon carbide single crystal substrate, which enables thick film treatment on a desired surface of a silicon carbide single crystal substrate in a short time under mild conditions such as room temperature;
  • An object of the present invention is to provide a silicon carbide single crystal substrate processing system that can be applied to the processing method.
  • the source of the fluorine anion is selected from the group consisting of hydrofluoric acid, ammonium fluoride, a mixture of hydrofluoric acid and ammonium fluoride, ammonium fluoride tetramethylammonium fluoride, and hexafluorosilicic acid.
  • the electrolyte solution contains at least one alkali selected from the group consisting of an inorganic alkali and an organic alkali. Processing method.
  • a method for processing a silicon carbide single crystal substrate. (8) The method for treating a silicon carbide single crystal substrate according to any one of (1) to (7) above, wherein the electrolyte contains an oxidizing agent. (9) The method for processing a silicon carbide single crystal substrate according to any one of (1) to (8), wherein the dry etching or the ashing includes etching with a gas containing halogen atoms.
  • a method for processing a silicon carbide single crystal substrate (14) an anode that is a silicon carbide single crystal substrate having a silicon carbide semiconductor layer epitaxially grown on a first main surface; a cathode that faces the silicon carbide single crystal substrate; and a space between the silicon carbide single crystal substrate and the cathode.
  • a silicon carbide single crystal substrate processing system comprising a power supply device that causes an oxidation reaction, and a processing device that removes an oxygen-containing film formed on the first main surface by dry etching, ashing, and CMP.
  • a processing method for a silicon carbide single crystal substrate that can process a desired surface of a silicon carbide single crystal substrate into a thick film in a short time under mild conditions such as room temperature, and a silicon carbide that can be applied to the processing method.
  • a silicon carbide single crystal substrate that can process a desired surface of a silicon carbide single crystal substrate into a thick film in a short time under mild conditions such as room temperature, and a silicon carbide that can be applied to the processing method.
  • FIG. 1 is a schematic diagram showing an example of a silicon carbide single crystal substrate processing system according to the present embodiment.
  • FIG. 2A is a schematic diagram of a silicon carbide single crystal substrate processing apparatus used in Examples.
  • FIG. 2B is a top view of a cell of the silicon carbide single crystal substrate processing apparatus used in the example.
  • the method for processing a silicon carbide single crystal substrate includes a step (A) of providing a silicon carbide single crystal substrate having a silicon carbide semiconductor layer epitaxially grown on a first main surface; Forming a film containing oxygen on the first main surface by anodic oxidation by applying a voltage using the silicon carbide single crystal substrate as an anode while the first main surface is in contact with an electrolyte solution containing fluorine anions. and a step (C) of removing the film by any one of dry etching, ashing, and CMP.
  • the method for processing a silicon carbide single crystal substrate according to the present embodiment can form a porous film that can be removed by etching on a silicon carbide single crystal substrate.
  • the method for treating a silicon carbide single crystal substrate according to the present embodiment may further include a step (D) of replenishing the electrolyte solution with a replenisher solution having a higher concentration of fluorine anions than the concentration in the electrolyte solution. You don't have to.
  • the "main surface” refers to the main surface of the substrate, and the substrate preferably has a first main surface and a second main surface (for example, a back surface).
  • the present invention also relates to a method for forming a porous film, including the method for processing a silicon carbide single crystal substrate according to this embodiment. Each step will be explained below.
  • Step (A) The method for providing a silicon carbide single crystal substrate (hereinafter also simply referred to as "SiC single crystal substrate") having a silicon carbide semiconductor layer epitaxially grown on the first main surface is not particularly limited, and industrially available SiC single crystal A substrate may be prepared, or a silicon carbide semiconductor layer may be epitaxially grown on at least the first main surface of the SiC substrate by a known method to provide a SiC single crystal substrate.
  • the SiC single crystal substrate may have a silicon carbide semiconductor layer epitaxially grown only on the first main surface, or may have a silicon carbide semiconductor layer epitaxially grown on both the first main surface and the second main surface. It may also include a semiconductor layer.
  • step (B) while the first main surface of the SiC single crystal substrate is brought into contact with an electrolyte solution containing fluorine anions, a voltage is applied using the silicon carbide single crystal substrate as an anode to perform anodization to remove the first A film containing oxygen is formed on the main surface of the substrate.
  • the SiC single crystal substrate as an anode, the first main surface of the SiC single crystal substrate is brought into contact with an electrolyte solution containing fluorine anions, and the surface of the SiC single crystal substrate that is not in contact with the liquid (liquid contact surface) is (other side) and the cathode are electrically connected with the DC power supply device in between.
  • a voltage is applied between the single-crystal SiC substrate and the cathode using a DC power supply to perform anodization treatment uniformly over the first main surface of the single-crystal SiC substrate, and the first A film containing oxygen is formed on the main surface of the substrate.
  • anodization may be uniformly performed on each surface, one side at a time.
  • silicon which has a lower ionization tendency than carbon, is preferentially oxidized. Furthermore, silicon dioxide produced by anodic oxidation of silicon is etched by an electrolyte solution containing fluorine anions. Therefore, as the reaction in the anodic oxidation progresses, a carbon-rich SiOC film is formed on the first main surface of the silicon carbide single crystal substrate. Furthermore, the electrolyte solution containing fluorine anions permeates into the SiOC film to form pores. As a result, a film containing oxygen (hereinafter also simply referred to as a "porous film”) is formed on the first main surface.
  • a film containing oxygen hereinafter also simply referred to as a "porous film
  • a metal whose ionization tendency is smaller than that of hydrogen can be used.
  • metals such as copper, silver, palladium, platinum, and gold can be used as the negative electrode.
  • Carbon which is stable in solution, can also be used as a cathode.
  • the temperature of the electrolyte solution during anodization is not particularly limited, but is preferably 300°C or lower, more preferably 5 to 60°C, and even more preferably 10 to 40°C.
  • the treatment temperature for anodization is within the above preferred range, it is easy to use low boiling point solvents such as aqueous solvents, and it is easy to increase the number of usable solvent types.
  • selection of equipment components, safety measures, etc. are likely to be simplified.
  • the treatment time for anodic oxidation is not particularly limited, but is preferably from 2 seconds to 30 minutes, more preferably from 5 seconds to 20 minutes, and even more preferably from 10 seconds to 10 minutes.
  • the anodic oxidation treatment time is within the above preferred range, it is easy to form a porous film having a desired thickness on the first main surface with a high yield.
  • the voltage applied for anodic oxidation is not particularly limited, but is preferably 1 to 60V, more preferably 3 to 30V, and even more preferably 5 to 20V.
  • the voltage to be applied is within the above preferable range, it is easy to form a porous film having a desired thickness on the first main surface.
  • the electrolyte solution used in step (B) is not particularly limited as long as it contains a fluorine anion, but from the viewpoint of roughness, the viscosity of the undiluted electrolyte solution used at 20°C is 1.0 mPa ⁇ s or more and 10 mPa ⁇ s or less. is preferable, and the conductivity of the aqueous solution is preferably 0.1 mS/cm or more and 900 mS/cm or less.
  • the electrolyte solution used in step (B) contains hydrofluoric acid, ammonium fluoride, a mixture of hydrofluoric acid and ammonium fluoride, ammonium fluoride tetramethylammonium fluoride, and hexafluorosilicon as a source of fluorine anions. It is preferable to contain at least one kind selected from the group consisting of acids, and more preferably to contain hydrofluoric acid and a mixture of hydrofluoric acid and ammonium fluoride.
  • the electrolyte solution contains the above-mentioned fluorine anion supply source, a porous film is easily formed on the surface of the SiC substrate, and the porous film is easily removed in step (C).
  • Examples of the electrolyte solution include an aqueous solution containing any of the following components (E1) to (E3).
  • (E1) Component At least one member selected from the group consisting of hydrofluoric acid, ammonium fluoride, a mixture of hydrofluoric acid and ammonium fluoride, ammonium fluoride tetramethylammonium fluoride, and hexafluorosilicic acid (E2 ): At least one type selected from the group consisting of acids and hydrogen peroxide (E3): At least one type of alkali selected from the group consisting of inorganic alkalis and organic alkalis Note that the electrolyte solution contains component (E2) and/or (E3). ) component, the electrolyte solution only needs to contain a source of fluorine anions, and preferably also contains component (E1).
  • Component (E1) is preferably hydrofluoric acid or a mixture of hydrofluoric acid and ammonium fluoride.
  • the acid of component (E2) is preferably at least one selected from the group consisting of carboxylic acid, sulfonic acid, phosphonic acid, inorganic acid, and periodic acid.
  • carboxylic acid formic acid, citric acid, malonic acid, acetic acid, benzoic acid, lactic acid, malic acid, propionic acid, butyric acid, and valeric acid are preferred, and citric acid and acetic acid are more preferred.
  • sulfonic acid sulfuric acid, methanesulfonic acid, ethanesulfonic acid, benzenesulfonic acid, and p-toluenesulfonic acid are preferable, and sulfuric acid and an aqueous solution of methanesulfonic acid are more preferable.
  • phosphonic acid phosphoric acid, polyphosphoric acid, alkylphosphonic acid (such as butylphosphonic acid), propylphosphonic acid, hexylphosphonic acid, and phenylphosphonic acid are preferable, and phosphoric acid and polyphosphonic acid are more preferable.
  • the inorganic acid sulfuric acid, phosphoric acid, polyphosphoric acid, nitric acid, nitrous acid, sulfurous acid, phosphorous acid, hydrochloric acid, chloric acid, and perchloric acid are preferable, and sulfuric acid, phosphoric acid, and nitric acid are more preferable.
  • component (E2) acetic acid, sulfuric acid, phosphoric acid, polyphosphoric acid, and nitric acid are preferable, and sulfuric acid and phosphoric acid are more preferable.
  • sulfuric acid, phosphoric acid, and orthoperiodic acid are preferable from the viewpoint of improving pattern shape.
  • the component (E3) is preferably at least one selected from the group consisting of quaternary ammonium hydroxide salts, tertiary amines, secondary amines, primary amines, and ammonia.
  • Quaternary ammonium hydroxide salts include tetraethylammonium hydroxide (TEAH), tetramethylammonium hydroxide (TMAH), tetrapropylammonium hydroxide (TPAH), and dimethylbis(2-hydroxyethyl)ammonium hydroxide (DMEMAH).
  • TEAH tetraethylammonium hydroxide
  • TMAH tetramethylammonium hydroxide
  • TPAH tetrapropylammonium hydroxide
  • DMEMAH dimethylbis(2-hydroxyethyl)ammonium hydroxide
  • TBAH tetrabutylammonium hydroxide
  • TPAH tetrapropylammonium hydroxide
  • TEMAH tris(2-hydroxyethyl)methylammonium hydroxide
  • choline dimethyldiethylammonium hydroxide, tetraethanolammonium hydroxide, benzyltrimethyl Ammonium hydroxide, benzyltriethylammonium hydroxide, and benzyltributylammonium hydroxide are preferred, and tetramethylammonium hydroxide (TMAH) is more preferred.
  • TMAH tetramethylammonium hydroxide
  • tertiary amines include alkylamines such as trimethylamine, triethylamine, tripropylamine, tributylamine, triisobutylamine, dimethylethylamine, dimethylpropylamine, allyldiethylamine, dimethyl-n-butylamine, and diethylisopropylamine; tricyclopentylamine; Cycloalkylamines such as tricyclohexylamine, 4-dimethylaminopyridine, N,N,N',N'-tetramethylethylenediamine, N,N,N',N'-tetraethylethylenediamine, N,N,N', N'-tetramethyl-1,3-diaminopropane, N,N,N',N'-tetramethyl-1,3-diaminobutane, N',N'-tetramethyl-1,4-diaminobutane, N , N, N
  • secondary amines include alkylamines such as dimethylamine, diethylamine, methylethylamine, dipropylamine, diisopropylamine, dibutylamine, diisobutylamine, butylmethylamine; N,N-dicyclohexylamine, N-cyclopentylcyclohexaneamine, etc.
  • Cycloalkylamines such as methoxy (methylamine), N-(2-methoxyethyl)ethylamine, piperidine, 2-pipecoline, 3-pipecoline, 4-pipecoline, 2,6-dimethylpiperidine, 3,5-dimethyl Piperidine, pyrrolidine, 2-methylpyrrolidine, 3-methylpyrrolidine, morpholine, 2-methylmorpholine, 3-methylmorpholine, 2-methylpiperazine, 2,3-dimethylpiperazine, 2,5-dimethylpiperazine, N,N'- Dimethylethanediamine, N,N'-dimethylpropanediamine, N,N'-diethylethylenediamine, N,N'-diethylpropanediamine, and N,N'-diisopropylethylenediamine are preferred, and dibutylamine is more preferred.
  • Primary amines include alkylamines such as methylamine, ethylamine, propylamine, n-butylamine, isopropylamine, and tert-butylamine; cycloalkylamines such as cyclopentylamine, cyclohexylamine, and cyclohexanemethylamine; methoxyethylamine, methoxypropyl Amines, alkoxyamines such as methoxybutylamine, ethoxypropylamine, propoxypropylamine, etc., other hydroxylamines, 2-(2-aminoethylamino)ethanol, ethylenediamine, butane 1,4-diamine, 1,3-propanediamine, 1,6-hexanediamine, pentane-1,5-diamine, and monoethanolamine are preferred, and n-butylamine and monoethanolamine are more preferred.
  • alkylamines such as methylamine, ethylamine, prop
  • component (E3) alkali metal salts such as potassium chloride can also be mentioned.
  • alkali metal salts such as potassium chloride
  • monoethanolamine and TMAH are preferred as component (E3).
  • the electrolyte solution may include component (E1) or at least one of component (E1), component (E2), and component (E3).
  • component (E1) or at least one of component (E1), component (E2), and component (E3) A combination of one kind is preferred, a combination of component (E1) and at least one of components (E2) and (E3) is more preferred, and a combination of component (E1) and (E2) is even more preferred.
  • the concentration of the electrolyte solution is not particularly limited as long as it contains any one of the components (E1) to (E3), but it is preferably 0.0001 to 99.99% by mass, more preferably 0.001 to 90% by mass. Preferably, 0.002 to 50% by mass is more preferable.
  • concentration of the electrolyte solution aqueous solution
  • the electrolyte solution may include an oxidizing agent.
  • the oxidizing agent include H 2 O 2 , nitric acid, hydrochloric acid, periodic acid, peracetic acid, peroxodisulfuric acid, hypochlorous acid, and the like.
  • the content of the oxidizing agent is not particularly limited, but is preferably 0.0001% to 99.00% by mass, more preferably 0.001% to 90% by mass, and 0.002% by mass based on the total amount of the electrolyte solution. More preferably 50% by mass.
  • the content of the oxidizing agent is within the preferable range, a porous film is easily formed on the surface of the SiC substrate, and the porous film is easily removed in step (C).
  • the electrolyte solution may contain at least one antifoaming agent selected from the group consisting of organic solvents and surfactants.
  • an alcohol solvent is preferable.
  • the alcohol solvent include ethanol, 1-propanol, isopropanol, 1-butanol, 2-butanol, isobutanol, 3-methyl-1-butanol, tert-butyl alcohol, 1-pentanol, 2-pentanol, 1-hexanol, 1-heptanol, 1-octanol, 1-decanol, 2-hexanol, 2-heptanol, 2-octanol, 3-hexanol, 3-heptanol, 3-octanol, 4-octanol, 3-methyl-3- Pentanol, cyclopentanol, 2,3-dimethyl-2-butanol, 3,3-dimethyl-2-butanol, 2-methyl-2-pentanol, 2-methyl-3-pentanol, 3-methyl-2 -Pentanol, 3-methyl-3-pentanol, 4-methyl-2-p
  • Organic solvents other than alcohol solvents include propylene glycol monomethyl ether acetate (PEGEMA), acetic acid, ethyl acetate, propyl acetate, isopropyl acetate, butyl acetate, cyclohexanone, DMAC, DMSO, NMP, 2-pyrrolidone, sulfolane, propylene carbonate, acetone. , cyclohexanone, N-methylmorpholine-N-oxide, and the like.
  • PEGEMA propylene glycol monomethyl ether acetate
  • surfactants examples include nonionic surfactants, anionic surfactants, cationic surfactants, and amphoteric surfactants.
  • nonionic surfactants include polyalkylene oxide alkyl phenyl ether surfactants, polyalkylene oxide alkyl ether surfactants, block polymer surfactants consisting of polyethylene oxide and polypropylene oxide, and polyoxyalkylene distyrenated surfactants.
  • examples include phenyl ether surfactants, polyalkylene tribenzyl phenyl ether surfactants, and acetylene polyalkylene oxide surfactants.
  • anionic surfactants include alkyl sulfonic acids, alkylbenzenesulfonic acids, alkylnaphthalene sulfonic acids, alkyldiphenyl ether sulfonic acids, fatty acid amide sulfonic acids, polyoxyethylene alkyl ether carboxylic acids, polyoxyethylene alkyl ether acetic acids, and polyoxyethylene Examples include alkyl ether propionic acid, alkylphosphonic acid, fatty acid salts, and the like. Examples of the "salt” include ammonium salt, sodium salt, potassium salt, tetramethylammonium salt, and the like.
  • cationic surfactant examples include alkylpyridium surfactants, quaternary ammonium salt surfactants, and the like.
  • amphoteric surfactants examples include betaine type surfactants, amino acid type surfactants, imidazoline type surfactants, amine oxide type surfactants, and the like.
  • the antifoaming agents may be used alone or in combination of two or more.
  • the content of the antifoaming agent is not particularly limited, but is preferably 0.0001% by mass to 50% by mass, more preferably 0.0002% by mass to 10% by mass, and 0.002% by mass to 10% by mass, based on the total amount of the electrolyte solution. 1% by weight is more preferable, and 0.002% by weight to 0.2% by weight is particularly preferable.
  • the content of the antifoaming agent is within the above-mentioned preferable range, it is easy to prevent bubbles from being generated on the surface of the SiC single crystal substrate after anodic oxidation. Thereby, it is easy to form a porous membrane having a desired thickness uniformly on the first main surface.
  • the electrolyte solution has a final current density of 0.01 mA/cm 2 or more with a fluctuation range of ⁇ 3 mA/cm 2 for 60 seconds after the voltage is applied in the step (B). It is preferably at least 0.1 mA/cm 2 , more preferably at least 0.5 mA/cm 2 , even more preferably at least 1.0 mA/cm 2 .
  • the upper limit of the final current density is not particularly limited, but examples include 150 mA/cm 2 or less, 100 mA/cm 2 or less, 80 mA/cm 2 or less. When the final current density is within the above preferable range, the formation of a porous membrane is more likely to occur preferentially than the oxidation reaction of the electrolyte solution.
  • the thickness of the porous membrane formed in step (B) is not particularly limited, and can be adjusted as appropriate depending on the purpose.
  • a porous film with a thickness of 1 to 20,000 nm can be formed.
  • the thickness of the porous membrane is preferably 10 to 15,000 nm, more preferably 20 to 10,000 nm.
  • step (C) the porous film formed in step (B) is removed by dry etching, ashing, or CMP (chemical mechanical polishing). Through the step (C), a flat surface can also be formed on a desired surface of the SiC single crystal substrate.
  • the processing conditions for removal are not particularly limited, and known processing conditions can be employed.
  • step (C) in the case of dry etching or ashing, it is preferable to perform the etching treatment with a gas containing halogen atoms from the viewpoint of more efficient etching treatment.
  • a gas containing halogen atoms examples include CF 4 , CHF 3 , SF 6 gas, and the like.
  • the gas containing chlorine atoms include Cl 2 and BCl 3 gas.
  • step (D) the electrolyte solution is replenished with a replenisher having a higher concentration of fluorine anions than the concentration in the electrolyte solution.
  • the timing of performing step (D) is not particularly limited, and the replenisher may be added to the electrolyte when the concentration of the electrolyte becomes lower than before the start of anodic oxidation.
  • the electrolyte is an acid
  • the hydrogen ion concentration in the replenisher is higher than the concentration in the electrolyte solution.
  • the hydroxide ion concentration of the replenisher is higher than the concentration in the electrolyte solution.
  • a desired surface of the SiC single crystal substrate can be processed into a thick film in a short time under mild conditions such as room temperature.
  • a metal-free and highly stable high purity solution that can be used in semiconductors can be used.
  • a porous film having a desired thickness can be uniformly formed on the SiC surface, and by etching the porous film, the SiC substrate can be etched while maintaining a smooth surface.
  • the silicon carbide single crystal substrate processing system includes an anode that is a silicon carbide single crystal substrate having a silicon carbide semiconductor layer epitaxially grown on a first main surface, a cathode that faces the silicon carbide single crystal substrate, and a silicon carbide single crystal substrate that is An electrolyte solution containing fluorine anions is interposed between the silicon single crystal substrate and the cathode, and is in contact with the first main surface and the cathode; Contains a power supply device that causes an anodic oxidation reaction at the interface of the first main surface by applying voltage, and a processing device that removes the porous film formed on the first main surface by one of dry etching, ashing, and CMP. do.
  • FIG. 1 is a schematic diagram showing an example of a silicon carbide single crystal substrate processing system according to the present embodiment.
  • a silicon carbide single crystal substrate processing system 100 includes an electrolytic cell 5 containing an electrolyte solution 4, a power supply 6 and a power supply controller 7, a cathode (silver, palladium, platinum, gold, carbon, etc.) 2 connected to the power supply, and an anode. It includes a certain anodized workpiece 1 (in this case, the SiC single crystal substrate is the anode 1), an electrolyte solution 4 interposed between the anode 1 and the cathode 2, and an etching processing apparatus 10.
  • a seal 8 is installed between the electrolyte 4 and the electrolytic tank 5 to prevent leakage, but this is to prevent the electrolyte 4 from touching surfaces other than the surface to be treated of the anode 1.
  • this may not necessarily be necessary.
  • the SiC single crystal substrate (anode 1) has a silicon carbide semiconductor layer epitaxially grown on the first main surface.
  • the SiC single crystal substrate is the same as the SiC single crystal substrate in the method for processing a silicon carbide single crystal substrate described above.
  • electrolyte solution 4 is an electrolyte solution containing fluorine anions, and is similar to the electrolyte solution in the method for processing a silicon carbide single crystal substrate described above.
  • concentration of the electrolyte solution 4 may be adjusted just before it is brought into contact with the SiC single crystal substrate (anode 1), or a highly concentrated chemical solution may be added.
  • the electrolyte solution 4 may be used while containing impurities such as elution from the SiC single crystal substrate when the SiC single crystal substrate comes into contact with the electrolyte solution 4, or the impurities may be removed during the circulation process. It is possible.
  • replenishment is performed using a replenisher, and the replenisher has an electrolyte concentration higher than the concentration in the electrolyte solution.
  • the electrolyte is an acid
  • the hydrogen ion concentration in the replenisher is higher than the concentration in the electrolyte solution.
  • the electrolyte is alkaline
  • the hydroxide ion concentration of the replenisher is higher than the concentration in the electrolyte solution.
  • the processing conditions for anodic oxidation are the same as the processing conditions for anodic oxidation in the method for processing a silicon carbide single crystal substrate described above.
  • the SiC single crystal substrate (anode 1) after the anodic oxidation treatment is transported to the porous film removal processing apparatus 10 and subjected to the porous film removal processing.
  • the porous film removal processing device 10 is not particularly limited as long as it can remove the porous film by any one of dry etching, ashing, and CMP (chemical mechanical polishing), and any known device can be used.
  • the processing conditions for removing the porous film are the same as those for removing the porous film in the method for processing a silicon carbide single crystal substrate described above.
  • a desired surface of a SiC single crystal substrate can be processed into a thick film in a short time under mild conditions such as room temperature.
  • a metal-free, highly stable, high purity solution that can be used in semiconductors can be used.
  • the SiC single crystal substrate after the anodization treatment is subjected to the etching treatment, so that the porous film can be processed with high precision. It becomes possible.
  • the SiC single crystal substrate (anode 1) is horizontally arranged on the bottom surface of the electrolytic cell 5 and subjected to anodization treatment
  • the silicon carbide single crystal substrate according to the present embodiment
  • the substrate processing system is not limited to this.
  • a substrate holding mechanism is provided to hold the SiC single crystal substrates in such a way that only the surface to be treated of each SiC single crystal substrate comes into contact with the electrolyte solution 4.
  • Anodizing treatment may be performed while the film is being held.
  • the SiC single crystal substrate may be arranged perpendicularly to the bottom surface of the electrolytic bath 5 and subjected to anodization treatment.
  • the anode (21) is a SiC wafer (having a silicon carbide semiconductor layer epitaxially grown on the first main surface; manufactured by Showa Denko K.K.), and the reference electrode (22) is an Ag/ An AgCl electrode and a Pt electrode were used as the negative electrode (23) (FIG. 2A).
  • 1 ml of the electrolyte solution (24) of each test example was added to a cell (25) with a radius of 4 mm as shown in FIG. 2B.
  • CMP Polishing for 30 minutes using a suspension (slurry) of colloidal silica with a particle size of 85 nm dispersed in aqueous ammonia or KOH (concentration of colloidal silica: 10%).
  • the porous films of Test Examples 1 to 30 formed on SiC substrates by the method of the present invention can be removed well by dry etching, ashing, and CMP. I know that I can do it. On the other hand, it can be said that the porous film formed on the SiC substrate by the method of the present invention has poor removability by wet etching.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
PCT/JP2023/023381 2022-06-30 2023-06-23 炭化珪素単結晶基板の処理方法、炭化珪素単結晶基板処理システム、及び補充液 WO2024004872A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP23831314.2A EP4539106A1 (en) 2022-06-30 2023-06-23 Processing method for silicon carbide single crystal substrate, silicon carbide single crystal substrate processing system, and replenishing liquid
JP2024530779A JPWO2024004872A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2022-06-30 2023-06-23
KR1020247041857A KR20250028270A (ko) 2022-06-30 2023-06-23 탄화규소 단결정 기판의 처리 방법, 탄화규소 단결정 기판 처리 시스템, 및 보충액

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-106471 2022-06-30
JP2022106471 2022-06-30

Publications (1)

Publication Number Publication Date
WO2024004872A1 true WO2024004872A1 (ja) 2024-01-04

Family

ID=89382987

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2023/023381 WO2024004872A1 (ja) 2022-06-30 2023-06-23 炭化珪素単結晶基板の処理方法、炭化珪素単結晶基板処理システム、及び補充液

Country Status (4)

Country Link
EP (1) EP4539106A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPWO2024004872A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR20250028270A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
WO (1) WO2024004872A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136190A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-09-21 1976-03-26 Mitsubishi Gas Chemical Co
JPH06104436A (ja) * 1992-09-18 1994-04-15 Fujitsu Ltd 薄膜トランジスタの製造方法
JPH06258671A (ja) * 1993-03-03 1994-09-16 Sharp Corp 薄膜素子及びその製造方法
JP2003133308A (ja) * 2001-10-23 2003-05-09 Nagoya Industrial Science Research Inst 炭化ケイ素の酸化膜製造方法、酸化膜製造装置、および酸化膜を用いた半導体素子の製造方法
JP2007227495A (ja) * 2006-02-22 2007-09-06 Mitsubishi Electric Corp ＳｉＣ半導体装置の製造方法及びＳｉＣ半導体装置
JP2009013489A (ja) * 2007-07-09 2009-01-22 Tokai Carbon Co Ltd ＣＶＤ−ＳｉＣ成形体の洗浄方法
JP5560774B2 (ja) 2010-03-03 2014-07-30 日立金属株式会社 炭化珪素単結晶基板の製造方法
JP2014187131A (ja) * 2013-03-22 2014-10-02 Osaka Univ 陽極酸化を援用した形状創成エッチング方法、研磨方法及び高精度形状創成方法
JP2017516289A (ja) * 2014-02-10 2017-06-15 レンセラール ポリテクニック インスティチュート 半導体の選択的な電気化学エッチング
JP6821948B2 (ja) 2016-05-23 2021-01-27 株式会社豊田中央研究所 炭化ケイ素（ＳｉＣ）基板の光電気化学エッチングに用いるエッチング液、エッチング装置、およびエッチング方法
JP2021027359A (ja) * 2019-08-05 2021-02-22 国立大学法人大阪大学 陽極酸化を援用した研磨方法
JP2021044271A (ja) 2019-09-06 2021-03-18 株式会社豊田中央研究所 エッチング液およびエッチング方法
JP2021082689A (ja) * 2019-11-18 2021-05-27 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586294Y2 (ja) 1978-10-20 1983-02-03 ダイワ精工株式会社 スピニングリ−ルの制動装置

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136190A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-09-21 1976-03-26 Mitsubishi Gas Chemical Co
JPH06104436A (ja) * 1992-09-18 1994-04-15 Fujitsu Ltd 薄膜トランジスタの製造方法
JPH06258671A (ja) * 1993-03-03 1994-09-16 Sharp Corp 薄膜素子及びその製造方法
JP2003133308A (ja) * 2001-10-23 2003-05-09 Nagoya Industrial Science Research Inst 炭化ケイ素の酸化膜製造方法、酸化膜製造装置、および酸化膜を用いた半導体素子の製造方法
JP2007227495A (ja) * 2006-02-22 2007-09-06 Mitsubishi Electric Corp ＳｉＣ半導体装置の製造方法及びＳｉＣ半導体装置
JP2009013489A (ja) * 2007-07-09 2009-01-22 Tokai Carbon Co Ltd ＣＶＤ−ＳｉＣ成形体の洗浄方法
JP5560774B2 (ja) 2010-03-03 2014-07-30 日立金属株式会社 炭化珪素単結晶基板の製造方法
JP2014187131A (ja) * 2013-03-22 2014-10-02 Osaka Univ 陽極酸化を援用した形状創成エッチング方法、研磨方法及び高精度形状創成方法
JP2017516289A (ja) * 2014-02-10 2017-06-15 レンセラール ポリテクニック インスティチュート 半導体の選択的な電気化学エッチング
JP6821948B2 (ja) 2016-05-23 2021-01-27 株式会社豊田中央研究所 炭化ケイ素（ＳｉＣ）基板の光電気化学エッチングに用いるエッチング液、エッチング装置、およびエッチング方法
JP2021027359A (ja) * 2019-08-05 2021-02-22 国立大学法人大阪大学 陽極酸化を援用した研磨方法
JP2021044271A (ja) 2019-09-06 2021-03-18 株式会社豊田中央研究所 エッチング液およびエッチング方法
JP2021082689A (ja) * 2019-11-18 2021-05-27 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

Also Published As

Publication number Publication date
JPWO2024004872A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2024-01-04
EP4539106A1 (en) 2025-04-16
KR20250028270A (ko) 2025-02-28

Similar Documents

Publication Publication Date Title
CN110777381B (zh) 用于TiN硬掩模去除和蚀刻残留物清洁的组合物
TWI404134B (zh) 半導體裝置之製造方法及半導體表面上之微型粗糙度之降低方法
EP2798669B1 (en) Compositions and methods for selectively etching titanium nitride
KR0152702B1 (ko) 반도체 기판처리 방법
JP4456424B2 (ja) フォトレジスト残渣及びポリマー残渣除去組成物
EP4101009B1 (en) Surfactants for electronics
US9678430B2 (en) Composition and process for stripping photoresist from a surface including titanium nitride
TW201542772A (zh) 蝕刻組成物
TW201516129A (zh) 選擇性蝕刻氮化鈦之組成物及方法
IL247182A (en) Liquid preparations for cleaning a semiconductor device and a method for cleaning a semiconductor device
JP3679216B2 (ja) 半導体基板の洗浄液及びこれを使用する洗浄方法
US8894774B2 (en) Composition and method to remove excess material during manufacturing of semiconductor devices
CN109423290B (zh) 用于在制造半导体器件过程中相对于氮化钛选择性地去除氮化钽的蚀刻溶液
JPWO2006129538A1 (ja) ホスホン酸を含む半導体ウェハ洗浄用組成物及び洗浄方法
EP1635224A2 (en) Composition for removing a photoresist residue and polymer residue, and residue removal process using the same
US6444582B1 (en) Methods for removing silicon-oxy-nitride layer and wafer surface cleaning
WO2024004872A1 (ja) 炭化珪素単結晶基板の処理方法、炭化珪素単結晶基板処理システム、及び補充液
EP1542080A1 (en) Photoresist residue remover composition
EP4539105A1 (en) Silicon carbide single crystal substrate processing method, and silicon carbide single crystal substrate processing system
TWI415184B (zh) 使位於電絕緣材料表面上之半導體層厚度變薄和均勻化之方法
KR102527739B1 (ko) 에칭액 조성물 및 에칭 방법
JP2021044271A (ja) エッチング液およびエッチング方法
TWI869394B (zh) 結構體的製造方法、結構體的製造裝置以及中間結構體
JP7186116B2 (ja) エッチング液およびエッチング方法
JP2003257952A (ja) 絶縁膜エッチング剤

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23831314

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2024530779

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 18875004

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2023831314

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2023831314

Country of ref document: EP

Effective date: 20250110

NENP Non-entry into the national phase

Ref country code: DE

WWP Wipo information: published in national office

Ref document number: 1020247041857

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2023831314

Country of ref document: EP