WO2024004256A1 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
WO2024004256A1
WO2024004256A1 PCT/JP2023/005254 JP2023005254W WO2024004256A1 WO 2024004256 A1 WO2024004256 A1 WO 2024004256A1 JP 2023005254 W JP2023005254 W JP 2023005254W WO 2024004256 A1 WO2024004256 A1 WO 2024004256A1
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Prior art keywords
power
section
plasma processing
processing apparatus
smoothing
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Ceased
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PCT/JP2023/005254
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English (en)
French (fr)
Japanese (ja)
Inventor
望 永島
大祐 吉越
邦彦 山形
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2024530285A priority Critical patent/JPWO2024004256A1/ja
Priority to KR1020257001713A priority patent/KR20250028375A/ko
Priority to CN202380048424.2A priority patent/CN119404597A/zh
Priority to TW112122966A priority patent/TW202416340A/zh
Publication of WO2024004256A1 publication Critical patent/WO2024004256A1/ja
Priority to US19/003,836 priority patent/US20250149298A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/10—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/90—Regulation of charging or discharging current or voltage
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Definitions

  • An exemplary embodiment of the present disclosure relates to a plasma processing apparatus.
  • a plasma processing device is used in plasma processing.
  • a plasma processing apparatus includes a chamber and a substrate support stand (mounting stand) placed within the chamber.
  • the substrate support has a base (lower electrode) and an electrostatic chuck that holds the substrate.
  • a temperature adjustment element for example, a heater
  • a filter is provided between the temperature adjustment element and the power supply for the temperature adjustment element, high frequency noise that enters the power supply line and/or signal line from the high frequency electrode and/or other electrical components in the chamber is attenuated.
  • a filter is provided to either allow or prevent this.
  • Exemplary embodiments of the present disclosure provide techniques for suppressing the propagation of high frequency noise to a power source external to a plasma processing apparatus.
  • a plasma processing apparatus in one exemplary embodiment, includes a plasma processing chamber, a substrate support, a high frequency power source, an electrode or an antenna, at least one power consuming member, and at least one power receiving coil.
  • a substrate support is disposed within the plasma processing chamber.
  • the electrode or antenna is positioned such that a space within the plasma processing chamber is located between the electrode or antenna and the substrate support.
  • the high frequency power source is configured to generate high frequency power and is electrically connected to the substrate support, the electrode, or the antenna.
  • At least one power consuming member is disposed within the plasma processing chamber or within the substrate support.
  • At least one power storage unit is electrically connected to at least one power consumption member.
  • the at least one power receiving coil is electrically connected to at least one power storage unit and can receive power from the at least one power transmitting coil by electromagnetic induction coupling.
  • FIG. 1 is a diagram for explaining a configuration example of a plasma processing system.
  • FIG. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.
  • 1 is a diagram schematically illustrating a plasma processing apparatus according to an exemplary embodiment;
  • FIG. 3 schematically illustrates a plasma processing apparatus according to another exemplary embodiment;
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 2 is a diagram illustrating a power transmission unit according to an exemplary embodiment.
  • FIG. 2 is a diagram illustrating a power transmitting coil section and a power receiving coil section according to one exemplary embodiment.
  • FIG. 2 is a diagram illustrating a power transmitting coil section and a power receiving coil section according to one exemplary embodiment.
  • FIG. 2 is a diagram illustrating a power transmitting coil section and a power receiving coil section according to one exemplary embodiment.
  • 7 is a graph showing impedance characteristics of a power receiving coil section according to one exemplary embodiment.
  • FIG. 2 illustrates an RF filter according to one exemplary embodiment.
  • FIG. 3 illustrates a rectifying and smoothing section according to one exemplary embodiment.
  • FIG. 2 illustrates an RF filter according to one exemplary embodiment.
  • FIG. 2 is a diagram illustrating a communication section of a power transmission section and a communication section of a rectification/smoothing section according to an exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 6 is a diagram illustrating a communication section of a power transmission section and a communication section of a rectification/smoothing section according to another exemplary embodiment.
  • FIG. 3 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma
  • FIG. 23(a) and FIG. 23(b) each illustrate a power storage unit according to one exemplary embodiment.
  • 1 is a diagram illustrating a voltage controlled converter according to one exemplary embodiment.
  • FIG. 3 is a diagram illustrating a constant voltage controller according to one exemplary embodiment.
  • FIG. 6 is a diagram illustrating a constant voltage controller according to another exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 3 is a diagram illustrating the arrangement of a rectifying and smoothing section according to one exemplary embodiment.
  • FIG. 7 is a diagram illustrating the arrangement of a rectifying and smoothing section according to another exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 7 is a diagram illustrating the arrangement of a rectifying and smoothing section according to yet another exemplary embodiment.
  • FIG. 7 is a diagram illustrating the arrangement of a rectifying and smoothing section according to yet another exemplary embodiment.
  • FIG. 7 is a diagram illustrating the arrangement of a rectifying and smoothing section according to yet another exemplary embodiment.
  • FIG. 7 is a diagram illustrating the arrangement of a rectifying and smoothing section according to yet another exemplary embodiment.
  • FIG. 7 is a diagram illustrating the arrangement of a rectifying and smoothing section according to yet another exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 7 is a diagram illustrating
  • FIG. 7 is a diagram illustrating the arrangement of a rectifying and smoothing section according to yet another exemplary embodiment.
  • FIG. 7 is a diagram illustrating the arrangement of a rectifying and smoothing section according to yet another exemplary embodiment.
  • FIG. 2 illustrates an exemplary embodiment for reducing line potential differences due to conducted noise.
  • FIG. 2 illustrates an exemplary embodiment for reducing line potential differences due to conducted noise.
  • FIG. 2 illustrates an exemplary embodiment for reducing line potential differences due to conducted noise.
  • FIG. 2 illustrates an exemplary embodiment for reducing line potential differences due to conducted noise.
  • FIG. 7 illustrates a rectifying and smoothing section according to another exemplary embodiment.
  • FIG. 7 illustrates a rectifying and smoothing section according to yet another exemplary embodiment.
  • FIG. 7 illustrates a rectifying and smoothing section according to yet another exemplary embodiment.
  • FIG. 7 illustrates a rectifying and smoothing section according to yet another exemplary embodiment.
  • FIG. 6 is a diagram illustrating a rectifying/smoothing section and a constant voltage control section according to another exemplary embodiment. It is a timing chart of an example of the output voltage in a receiving coil part, and the signal output from each part of a rectifier/smoothing part.
  • 48 is a timing chart of an example related to the constant voltage control section shown in FIG. 47.
  • FIG. 48 is a timing chart of an example related to the constant voltage control section shown in FIG. 47.
  • FIG. FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment. It is a figure which shows the electrical storage part in the plasma processing apparatus based on yet another exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment. It is a figure which shows the electrical storage part in the plasma processing apparatus based on yet another exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 7 is a diagram illustrating connections of multiple voltage-controlled converters in a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 7 is a diagram illustrating connections of multiple voltage-controlled converters in a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 7 is a diagram illustrating connections of multiple voltage-controlled converters in a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 7 illustrates a rectifying and smoothing section according to yet another exemplary embodiment.
  • FIG. 6 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 7 illustrates a rectifying and smoothing section according to yet another exemplary embodiment.
  • FIG. 7 is a diagram showing a power receiving coil section and a power transmitting coil section in a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 7 is a diagram showing a power receiving coil section and a power transmitting coil section in a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 7 is a diagram showing a power receiving coil section and a power transmitting coil section in a plasma processing apparatus according to yet another exemplary embodiment.
  • 1 is a flowchart of a method for storing power in a power storage unit according to one exemplary embodiment.
  • FIG. 1 is a diagram for explaining a configuration example of a plasma processing system.
  • a plasma processing system includes a plasma processing apparatus 1 and a controller 2.
  • the plasma processing system is an example of a substrate processing system
  • the plasma processing apparatus 1 is an example of a substrate processing apparatus.
  • the plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support section 11, and a plasma generation section 12.
  • the plasma processing chamber 10 has a plasma processing space.
  • the plasma processing chamber 10 also includes at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas exhaust port for discharging gas from the plasma processing space.
  • the gas supply port is connected to a gas supply section 20, which will be described later, and the gas discharge port is connected to an exhaust system 40, which will be described later.
  • the substrate support section 11 is disposed within the plasma processing space and has a substrate support surface for supporting a substrate.
  • the plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space.
  • the plasmas formed in the plasma processing space are capacitively coupled plasma (CCP), inductively coupled plasma (ICP), and ECR plasma (Electron-Cyclotron-Resonance Plasma).
  • CCP capacitively coupled plasma
  • ICP inductively coupled plasma
  • ECR plasma Electro-Cyclotron-Resonance Plasma
  • HWP Helicon wave excited plasma
  • SWP surface wave plasma
  • various types of plasma generation sections may be used, including an AC (Alternating Current) plasma generation section and a DC (Direct Current) plasma generation section.
  • the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal.
  • the RF signal has a frequency within the range of 100kHz to 150MHz.
  • the control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various steps described in this disclosure.
  • the control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various steps described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1.
  • the control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3.
  • the control unit 2 is realized by, for example, a computer 2a.
  • the processing unit two a1 may be configured to read a program from the storage unit two a2 and perform various control operations by executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary.
  • the acquired program is stored in the storage unit 2a2, and is read out from the storage unit 2a2 and executed by the processing unit 2a1.
  • the medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3.
  • the processing unit 2a1 may be a CPU (Central Processing Unit).
  • the storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. Good.
  • the communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).
  • FIG. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.
  • the capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply section 20, a power supply 30, and an exhaust system 40. Further, the plasma processing apparatus 1 includes a substrate support section 11 and a gas introduction section. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10 .
  • the gas introduction section includes a shower head 13.
  • Substrate support 11 is arranged within plasma processing chamber 10 .
  • the shower head 13 is arranged above the substrate support section 11 . In one embodiment, showerhead 13 forms at least a portion of the ceiling of plasma processing chamber 10 .
  • the plasma processing chamber 10 has a plasma processing space 10s defined by a shower head 13, a side wall 10a of the plasma processing chamber 10, and a substrate support 11. Plasma processing chamber 10 is grounded.
  • the shower head 13 and the substrate support section 11 are electrically insulated from the casing of the plasma processing chamber 10.
  • the substrate support section 11 includes a main body section 111 and a ring assembly 112.
  • the main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112.
  • a wafer is an example of a substrate W.
  • the annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in plan view.
  • the substrate W is placed on the central region 111a of the main body 111, and the ring assembly 112 is placed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.
  • the main body 111 includes a base 1110 and an electrostatic chuck 1111.
  • Base 1110 includes a conductive member.
  • the conductive member of the base 1110 can function as a lower electrode.
  • Electrostatic chuck 1111 is placed on base 1110.
  • the electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode (also referred to as an adsorption electrode, a chuck electrode, or a clamp electrode) 1111b disposed within the ceramic member 1111a.
  • Ceramic member 1111a has a central region 111a. In one embodiment, ceramic member 1111a also has an annular region 111b.
  • another member surrounding the electrostatic chuck 1111 such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b.
  • ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulation member, or may be placed on both the electrostatic chuck 1111 and the annular insulation member.
  • at least one RF/DC electrode coupled to an RF power source 31 and/or a DC power source 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, at least one RF/DC electrode functions as a bottom electrode.
  • An RF/DC electrode is also referred to as a bias electrode if a bias RF signal and/or a DC signal, as described below, is supplied to at least one RF/DC electrode.
  • the conductive member of the base 1110 and at least one RF/DC electrode may function as a plurality of lower electrodes.
  • the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.
  • Ring assembly 112 includes one or more annular members.
  • the one or more annular members include one or more edge rings and at least one cover ring.
  • the edge ring is made of a conductive or insulating material
  • the cover ring is made of an insulating material.
  • the substrate support unit 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature.
  • the temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof.
  • a heat transfer fluid such as brine or gas flows through the flow path 1110a.
  • a channel 1110a is formed within the base 1110 and one or more heaters are disposed within the ceramic member 1111a of the electrostatic chuck 1111.
  • the substrate support section 11 may include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.
  • the shower head 13 is configured to introduce at least one processing gas from the gas supply section 20 into the plasma processing space 10s.
  • the shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c.
  • the processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c.
  • the showerhead 13 also includes at least one upper electrode.
  • the gas introduction section may include one or more side gas injectors (SGI) attached to one or more openings formed in the side wall 10a.
  • SGI side gas injectors
  • the gas supply section 20 may include at least one gas source 21 and at least one flow rate controller 22.
  • the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 to the showerhead 13 via a respective flow controller 22 .
  • Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller.
  • gas supply 20 may include at least one flow modulation device that modulates or pulses the flow rate of at least one process gas.
  • Power supply 30 includes an RF power supply 31 coupled to plasma processing chamber 10 via at least one impedance matching circuit.
  • RF power source 31 is configured to supply at least one RF signal (RF power) to at least one bottom electrode and/or at least one top electrode.
  • RF power supply 31 can function as at least a part of the plasma generation section 12. Further, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated in the substrate W, and ion components in the formed plasma can be drawn into the substrate W.
  • the RF power supply 31 includes a first RF generation section 31a and a second RF generation section 31b.
  • the first RF generation section 31a is coupled to at least one lower electrode and/or at least one upper electrode via at least one impedance matching circuit, and generates a source RF signal (source RF power) for plasma generation. It is configured as follows.
  • the source RF signal has a frequency within the range of 10 MHz to 150 MHz.
  • the first RF generator 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are provided to at least one bottom electrode and/or at least one top electrode.
  • the second RF generating section 31b is coupled to at least one lower electrode via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power).
  • the frequency of the bias RF signal may be the same or different than the frequency of the source RF signal.
  • the bias RF signal has a lower frequency than the frequency of the source RF signal.
  • the bias RF signal has a frequency within the range of 100kHz to 60MHz.
  • the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies.
  • the generated one or more bias RF signals are provided to at least one bottom electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.
  • Power source 30 may also include a DC power source 32 coupled to plasma processing chamber 10 .
  • the DC power supply 32 includes a first DC generation section 32a and a second DC generation section 32b.
  • the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal.
  • the generated first DC signal is applied to at least one bottom electrode.
  • the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal.
  • the generated second DC signal is applied to the at least one top electrode.
  • the first and second DC signals may be pulsed.
  • a sequence of voltage pulses is applied to at least one bottom electrode and/or at least one top electrode.
  • the voltage pulse may have a pulse waveform that is rectangular, trapezoidal, triangular, or a combination thereof.
  • a waveform generator for generating a sequence of voltage pulses from a DC signal is connected between the first DC generator 32a and the at least one bottom electrode. Therefore, the first DC generation section 32a and the waveform generation section constitute a voltage pulse generation section.
  • the voltage pulse generation section is connected to at least one upper electrode.
  • the voltage pulse may have positive polarity or negative polarity.
  • the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period.
  • the first and second DC generation sections 32a and 32b may be provided in addition to the RF power source 31, or the first DC generation section 32a may be provided in place of the second RF generation section 31b. good.
  • the exhaust system 40 may be connected to a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example.
  • Evacuation system 40 may include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is adjusted by the pressure regulating valve.
  • the vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.
  • the upper electrode is arranged such that the plasma processing space is located between the upper electrode and the substrate support section 11.
  • a high frequency power source such as the first RF generator 31 a is electrically connected to the upper electrode or the lower electrode in the substrate support 11 .
  • an antenna is arranged such that a plasma processing space is located between the antenna and the substrate support section 11.
  • a high frequency power source such as the first RF generator 31a is electrically connected to the antenna.
  • the antenna is arranged such that the plasma processing space is located between the antenna and the substrate support part 11. Ru.
  • a high frequency power source such as the first RF generator 31a is electrically connected to the antenna via a waveguide.
  • Each plasma processing apparatus described below is configured to supply power to at least one power consuming member in the chamber 10 by wireless power supply (electromagnetic induction coupling), and has the same configuration as the plasma processing apparatus 1. obtain.
  • FIG. 3 is a diagram schematically illustrating a plasma processing apparatus according to one exemplary embodiment.
  • the plasma processing apparatus 100A shown in FIG. 3 includes at least one high-frequency power source 300, a power receiving coil section 140, a power storage section 160, and at least one power consumption member 240 (see FIGS. 25 and 26).
  • the plasma processing apparatus 100A may further include a power transmission section 120, a power transmission coil section 130, a rectification/smoothing section 150, a constant voltage control section 180 (an example of a voltage control section), a ground frame 110, and a matching section 301.
  • At least one high-frequency power supply 300 includes a first RF generation section 31a and/or a second RF generation section 32a. At least one high frequency power source 300 is electrically connected to the substrate support section 11 via a matching section 301. Matching section 301 includes at least one impedance matching circuit.
  • the ground frame 110 includes the chamber 10 and is electrically grounded.
  • the ground frame 110 electrically separates an internal space 110h (RF-Hot space) from an external space 110a (atmospheric space).
  • the ground frame 110 surrounds the substrate support part 11 arranged in the space 110h.
  • rectification/smoothing section 150, power storage section 160, and constant voltage control section 180 are arranged in space 110h.
  • the power transmission section 120, the power transmission coil section 130, and the power reception coil section 140 are arranged in the space 110a.
  • the devices arranged in the space 110a that is, the power transmitting section 120, the power transmitting coil section 130, the power receiving coil section 140, etc., are covered with a metal casing made of metal such as aluminum, and the metal casing is grounded. This suppresses leakage of high frequency noise caused by high frequency power such as the first RF signal and/or the second RF signal.
  • the metal housing and each power supply line have an insulating distance therebetween. Note that in the following description, high-frequency power such as the first RF signal and/or the second RF signal that propagates toward the power transmission unit 120 is referred to as high-frequency noise, common mode noise, or conductive There is something called noise.
  • the power transmission unit 120 is electrically connected between the AC power supply 400 (for example, a commercial AC power supply) and the power transmission coil unit 130.
  • Power transmission unit 120 receives the frequency of AC power from AC power supply 400 and converts the frequency of the AC power into a transmission frequency, thereby generating AC power having the transmission frequency, that is, transmission AC power.
  • the power transmission coil section 130 includes a power transmission coil 131 (see FIG. 9), which will be described later.
  • Power transmission coil 131 is electrically connected to power transmission section 120.
  • Power transmitting coil 131 receives transmitted AC power from power transmitting section 120 and wirelessly transmits the transmitted AC power to power receiving coil 141 .
  • the power receiving coil section 140 includes a power receiving coil 141 (see FIG. 9), which will be described later.
  • the power receiving coil 141 is coupled to the power transmitting coil 131 by electromagnetic induction.
  • Electromagnetic inductive coupling includes magnetic field coupling and electric field coupling. Further, magnetic field coupling includes magnetic field resonance (also referred to as magnetic field resonance).
  • the distance between the power receiving coil 141 and the power transmitting coil 131 is set to suppress common mode noise (conductive noise). Further, the distance between the power receiving coil 141 and the power transmitting coil 131 is set to a distance that allows power to be supplied.
  • the distance between the power receiving coil 141 and the power transmitting coil 131 is such that the amount of attenuation of high frequency power (that is, high frequency noise) between the power receiving coil 141 and the power transmitting coil 131 is equal to or less than a threshold value, and the power from the power transmitting coil 131 is
  • the power receiving coil 141 is set to be able to receive power.
  • the threshold value of the attenuation amount is set to a value that can sufficiently prevent damage or malfunction of the power transmission unit 120.
  • the attenuation threshold is, for example, ⁇ 20 dB.
  • the transmitted AC power received by the power receiving coil section 140 is output to the rectification/smoothing section 150.
  • the rectifying/smoothing section 150 is electrically connected between the power receiving coil section 140 and the power storage section 160.
  • the rectification/smoothing unit 150 generates DC power by full-wave rectification and smoothing of the transmitted AC power from the power receiving coil unit 140.
  • the DC power generated by the rectification/smoothing section 150 is stored in the power storage section 160.
  • Power storage unit 160 is electrically connected between rectification/smoothing unit 150 and constant voltage control unit 180. Note that the rectification/smoothing unit 150 may generate DC power by half-wave rectification and smoothing of the transmitted AC power from the power receiving coil unit 140.
  • the rectification/smoothing section 150 and the power transmission section 120 are electrically connected to each other by a signal line 1250.
  • Rectification/smoothing section 150 transmits an instruction signal to power transmission section 120 via signal line 1250.
  • the instruction signal is a signal for instructing the power transmission unit 120 to supply transmission AC power or to stop supplying transmission AC power.
  • the instruction signal may include a status signal, an abnormality detection signal, and a cooling control signal for power transmission coil section 130 and power reception coil section 140.
  • the status signal is a value such as the magnitude and/or phase of the voltage, current, and power detected by the voltage detector 155v (see FIG. 14) and the current detector 155i (see FIG. 14) of the rectifier/smoothing section 150.
  • the abnormality detection signal is a signal for transmitting the occurrence of a failure and/or temperature abnormality in the rectifying/smoothing section 150 to the power transmission section 120.
  • the cooling control signal controls a cooling mechanism provided in the power transmitting coil section 130 and the power receiving coil section 140. For example, in the case of air cooling, the cooling control signal controls the rotation speed of the fan. In the case of liquid cooling, the flow rate and/or temperature of the refrigerant is controlled.
  • the constant voltage control unit 180 applies a voltage to at least the power consumption member 240 using the power stored in the power storage unit 160.
  • the constant voltage control unit 180 can control at least application of voltage to the power consumption member 240 and stopping of the voltage application.
  • the power receiving coil 141 functions as a filter for high frequency noise caused by high frequency power such as the first RF signal and/or the second RF signal. Therefore, propagation of high frequency noise to a power source external to the plasma processing apparatus is suppressed.
  • FIG. 4 is a diagram schematically illustrating a plasma processing apparatus according to another exemplary embodiment.
  • the plasma processing apparatus 100B shown in FIG. 4 will be described below from the viewpoint of its differences from the plasma processing apparatus 100A.
  • the plasma processing apparatus 100B further includes a voltage control converter 170.
  • Voltage control converter 170 is a DC-DC converter, and is connected between power storage unit 160 and constant voltage control unit 180.
  • Voltage control converter 170 may be configured to input a constant output voltage to constant voltage control unit 180 even when voltage fluctuation occurs in power storage unit 160. Note that voltage fluctuations in power storage unit 160 may occur as a voltage drop depending on the stored power, for example, when power storage unit 160 is configured with an electric double layer.
  • FIG. 5 is a diagram schematically illustrating a plasma processing apparatus according to yet another exemplary embodiment.
  • the plasma processing apparatus 100C shown in FIG. 5 will be described below from the viewpoint of its differences from the plasma processing apparatus 100B.
  • the plasma processing apparatus 100C further includes an RF filter 190.
  • RF filter 190 is connected between rectification/smoothing section 150 and power transmission section 120.
  • RF filter 190 forms part of signal line 1250.
  • the RF filter 190 has a characteristic of suppressing propagation of high frequency power (high frequency noise) via the signal line 1250. That is, the RF filter 190 includes a low-pass filter that has a high impedance against high-frequency noise (conductive noise) but has a characteristic of passing an instruction signal of a relatively low frequency.
  • power storage unit 160, voltage control converter 170, and constant voltage control unit 180 are integrated with each other. That is, power storage unit 160, voltage control converter 170, and constant voltage control unit 180 are all arranged in a single metal housing or formed on a single circuit board. This reduces the length of each of the pair of power supply lines (plus line and minus line) that connect power storage unit 160 and voltage control converter 170 to each other. Furthermore, it is possible to make the lengths of a pair of power supply lines that connect power storage unit 160 and voltage control converter 170 to be equal to each other. Also. The length of each of the pair of power supply lines (plus line and minus line) that connect voltage control converter 170 and constant voltage control section 180 to each other becomes shorter.
  • FIG. 6 is a diagram schematically illustrating a plasma processing apparatus according to yet another exemplary embodiment.
  • the plasma processing apparatus 100D shown in FIG. 6 will be described below from the viewpoint of differences from the plasma processing apparatus 100C.
  • the plasma processing apparatus 100D does not include the RF filter 190.
  • the rectification/smoothing section 150 includes a communication section 151 that is a wireless section.
  • the power transmission unit 120 includes a communication unit 121 that is a wireless unit. The above-mentioned instruction signal is transmitted between the rectification/smoothing section 150 and the power transmission section 120 using the communication section 151 and the communication section 121. Details of the communication unit 121 and the communication unit 151 will be described later.
  • FIG. 7 is a diagram schematically illustrating a plasma processing apparatus according to yet another exemplary embodiment.
  • the plasma processing apparatus 100E shown in FIG. 7 will be described below from the viewpoint of its differences from the plasma processing apparatus 100D.
  • the plasma processing apparatus 100E further includes an RF filter 200.
  • RF filter 200 is connected between power receiving coil section 140 and rectification/smoothing section 150.
  • the RF filter 200 has a characteristic of reducing or blocking high frequency noise propagating from the power receiving coil section 140 to the power transmitting coil 131 and the power transmitting section 120. Details of the RF filter 200 will be described later.
  • FIG. 8 is a diagram illustrating a power transmission unit according to one exemplary embodiment.
  • power transmission unit 120 receives the frequency of AC power from AC power supply 400 and converts the frequency of the AC power into a transmission frequency, thereby generating transmission AC power having the transmission frequency.
  • the power transmission section 120 includes a control section 122, a rectification/smoothing section 123, and an inverter 124.
  • the control unit 122 includes a processor such as a CPU or a programmable logic device such as a field-programmable gate array (FPGA).
  • FPGA field-programmable gate array
  • the rectification/smoothing section 123 includes a rectification circuit and a smoothing circuit.
  • the rectifier circuit includes, for example, a diode bridge.
  • the smoothing circuit includes, for example, a line capacitor.
  • the rectifier/smoothing unit 123 performs full-wave rectification and smoothing on the AC power from the AC power supply 400 to generate DC power. Note that the rectification/smoothing unit 123 may generate DC power by half-wave rectification and smoothing of the AC power from the AC power supply 400.
  • the inverter 124 generates transmission AC power having a transmission frequency from the DC power output by the rectification/smoothing section 123.
  • Inverter 124 is, for example, a full bridge inverter and includes multiple triacs or multiple switching elements (eg, FETs).
  • the inverter 124 generates transmission AC power through ON/OFF control of a plurality of triacs or a plurality of switching elements by the control unit 122.
  • the transmitted AC power output from the inverter 124 is output to the power transmission coil section 130.
  • the power transmission unit 120 may further include a voltage detector 125v, a current detector 125i, a voltage detector 126v, and a current detector 126i.
  • Voltage detector 125v detects a voltage value between a pair of power supply lines that connect rectifier/smoothing section 123 and inverter 124 to each other.
  • Current detector 125i detects the current value between rectifier/smoothing section 123 and inverter 124.
  • Voltage detector 126v detects a voltage value between a pair of power supply lines that connect inverter 124 and power transmission coil section 130 to each other.
  • Current detector 126i detects the current value between inverter 124 and power transmission coil section 130.
  • the voltage value detected by the voltage detector 125v, the current value detected by the current detector 125i, the voltage value detected by the voltage detector 126v, and the current value detected by the current detector 126i are sent to the control unit 122. Be notified.
  • the power transmission unit 120 includes the communication unit 121 described above.
  • the communication unit 121 includes a driver 121d, a transmitter 121tx, and a receiver 121rx.
  • the transmitter 121tx is a wireless signal transmitter or an optical signal transmitter.
  • the receiver 121rx is a radio signal receiver or an optical signal receiver.
  • the communication unit 121 drives the transmitter 121tx using the driver 121d to output the signal from the control unit 122 from the transmitter 121tx as a wireless signal or an optical signal.
  • the signal output from the transmitter 121tx is received by the communication unit 151 (see FIG. 14), which will be described later.
  • the communication unit 121 receives a signal such as the above-mentioned instruction signal from the communication unit 151 using the receiver 121rx, and inputs the received signal to the control unit 122 via the driver 121d.
  • the control unit 122 receives an instruction signal from the communication unit 151 via the communication unit 121, a voltage value detected by the voltage detector 125v, a current value detected by the current detector 125i, and a current value detected by the voltage detector 126v.
  • the inverter 124 By controlling the inverter 124 according to the voltage value and the current value detected by the current detector 126i, output and stop of the transmitted AC power are switched.
  • FIGS. 9-11 are diagram illustrating a power transmitting coil section and a power receiving coil section according to one exemplary embodiment.
  • the power transmission coil section 130 may include, in addition to the power transmission coil 131, a resonance capacitor 132a and a resonance capacitor 132b.
  • the resonant capacitor 132a is connected between one end of the power transmission coil 131 and one of a pair of power supply lines that connect the power transmission section 120 and the power transmission coil section 130 to each other.
  • the resonant capacitor 132b is connected between the other of the pair of power supply lines and the other end of the power transmission coil 131.
  • the power transmission coil 131, the resonant capacitor 132a, and the resonant capacitor 132b constitute a resonant circuit with respect to the transmission frequency. That is, the power transmission coil 131, the resonant capacitor 132a, and the resonant capacitor 132b have a resonant frequency that substantially matches the transmission frequency. Note that the power transmission coil section 130 does not need to include either the resonance capacitor 132a or the resonance capacitor 132b.
  • the power transmission coil section 130 may further include a metal casing 130g.
  • the metal housing 130g has an open end and is grounded.
  • the power transmission coil 131 is arranged within the metal casing 130g with an insulated distance secured therebetween.
  • Power transmission coil section 130 may further include a heat sink 134, ferrite material 135, and thermally conductive sheet 136.
  • the heat sink 134 is disposed within the metal housing 130g and is supported by the metal housing 130g. Ferrite material 135 is placed on heat sink 134 .
  • the heat conductive sheet 136 is placed on the ferrite material 135.
  • the power transmitting coil 131 is arranged on the heat conductive sheet 136, and faces the power receiving coil 141 through the open end of the metal housing 130g.
  • a resonance capacitor 132a and a resonance capacitor 132b may be further housed in the metal housing 130g.
  • the power receiving coil section 140 includes a power receiving coil 141.
  • Power receiving coil 141 is electromagnetically coupled to power transmitting coil 131 .
  • the power receiving coil section 140 may include a resonant capacitor 142a and a resonant capacitor 142b.
  • the resonant capacitor 142a is connected between one end of the pair of power feeding lines extending from the power receiving coil section 140 and one end of the power receiving coil 141.
  • the resonant capacitor 142b is connected between the other of the pair of power feeding lines and one end of the power receiving coil 141. connected to the other end.
  • the receiving coil 141, the resonant capacitor 142a, and the resonant capacitor 142b constitute a resonant circuit with respect to the transmission frequency. That is, the power receiving coil 141, the resonant capacitor 142a, and the resonant capacitor 142b have a resonant frequency that substantially matches the transmission frequency. Note that the power receiving coil section 140 does not need to include either the resonant capacitor 142a or the resonant capacitor 142b.
  • the power receiving coil section 140 may further include a metal casing 140g.
  • the metal housing 140g has an open end and is grounded.
  • the power receiving coil 141 is arranged within the metal casing 140g with an insulation distance secured therebetween.
  • the power receiving coil section 140 may further include a spacer 143, a heat sink 144, a ferrite material 145, and a heat conductive sheet 146.
  • the spacer 143 is disposed within the metal casing 140g and is supported by the metal casing 140g. The spacer 143 will be described later.
  • Heat sink 144 is arranged on spacer 143.
  • Ferrite material 145 is placed on heat sink 144 .
  • Thermal conductive sheet 146 is arranged on ferrite material 145.
  • the power receiving coil 141 is arranged on the heat conductive sheet 146, and faces the power transmitting coil 131 through the open end of the metal housing 140g. As shown in FIG. 11, a resonance capacitor 142a and a resonance capacitor 142b may be further housed in the metal housing 140g.
  • the spacer 143 is formed from a dielectric material and is provided between the power receiving coil 141 and the metal casing 140g (ground).
  • the spacer 143 provides a spatial stray capacitance between the power receiving coil 141 and the ground.
  • FIG. 12 is a graph illustrating impedance characteristics of a receiving coil section according to one exemplary embodiment.
  • FIG. 12 shows the impedance characteristics of the power receiving coil section 140 depending on the thickness of the spacer 143.
  • the thickness of the spacer 143 corresponds to the distance between the heat sink 144 and the metal housing 140g.
  • the power receiving coil section 140 can adjust the impedance of each of the frequency fH and the frequency fL according to the thickness of the spacer 143. Therefore, according to the power receiving coil section 140, it is possible to provide high impedance at each of the two high frequency power frequencies used in the plasma processing apparatus, such as the first RF signal and the second RF signal. . Further, since high impedance can be obtained in the power receiving coil section 140, loss of high frequency power can be suppressed and a high processing rate (for example, etching rate) can be obtained.
  • a high processing rate for example, etching rate
  • FIG. 13 is a diagram illustrating an RF filter according to one exemplary embodiment.
  • the RF filter 200 is connected between the power receiving coil section 140 and the rectification/smoothing section 150.
  • RF filter 200 includes an inductor 201a, an inductor 201b, a termination capacitor 202a, and a termination capacitor 202b.
  • One end of the inductor 201a is connected to the resonant capacitor 142a, and the other end of the inductor 201a is connected to the rectifying/smoothing section 150.
  • Termination capacitor 202a is connected between one end of inductor 201a and ground.
  • Termination capacitor 202b is connected between one end of inductor 201b and ground.
  • Inductor 201a and termination capacitor 202a form a low pass filter.
  • the inductor 201b and the termination capacitor 202b form a low-pass filter.
  • the RF filter 200 provides high impedance at each of the two radio frequency power frequencies used in the plasma processing apparatus, such as the first RF signal and the second RF signal. Therefore, loss of high frequency power is suppressed, and a high processing rate (for example, etching rate) can be obtained.
  • FIG. 14 is a diagram illustrating a rectifying and smoothing section according to one exemplary embodiment.
  • the rectification/smoothing section 150 includes a control section 152, a rectification circuit 153, and a smoothing circuit 154.
  • the rectifier circuit 153 is connected between the power receiving coil section 140 and the smoothing circuit 154.
  • Smoothing circuit 154 is connected between rectifier circuit 153 and power storage unit 160.
  • the control unit 152 includes a processor such as a CPU or a programmable logic device such as an FPGA (Field-Programmable Gate Array). Note that the control unit 152 may be the same as the control unit 122 or may be different.
  • the rectifier circuit 153 outputs power generated by full-wave rectification of the AC power from the power receiving coil section 140.
  • the rectifier circuit 153 is, for example, a diode bridge. Note that the rectifier circuit 153 may output power generated by half-wave rectification of the AC power from the power receiving coil section 140.
  • the smoothing circuit 154 generates DC power by smoothing the power from the rectifier circuit 153.
  • Smoothing circuit 154 may include an inductor 1541a, a capacitor 1542a, and a capacitor 1542b.
  • One end of the inductor 1541a is connected to one of the pair of inputs of the smoothing circuit 154.
  • the other end of the inductor 1541a is connected to the positive output (V OUT+ ) of the rectifier/smoothing section 150.
  • the positive output of the rectifying/smoothing unit 150 is connected to one or more capacitors of the power storage unit 160 via a positive line 160p (see FIGS. 23(a) and 23(b)) among a pair of power supply lines to be described later. connected to one end of each.
  • One end of the capacitor 1542a is connected to one of a pair of inputs of the smoothing circuit 154 and one end of the inductor 1541a.
  • the other end of the capacitor 1542a is connected to the other of the pair of outputs of the smoothing circuit 154 and the negative output (V OUT- ) of the rectifier/smoothing section 150.
  • the negative output of the rectifying/smoothing unit 150 is connected to one or more capacitors of the power storage unit 160 via a negative line 160m (see FIGS. 23(a) and 23(b)) among a pair of power supply lines to be described later. connected to the other end of each.
  • One end of capacitor 1542b is connected to the other end of inductor 1541a.
  • the other end of the capacitor 1542b is connected to the other of the pair of outputs of the smoothing circuit 154 and the negative output (V OUT- ) of the rectifier/smoothing section 150.
  • the rectification/smoothing section 150 may further include a voltage detector 155v and a current detector 155i.
  • Voltage detector 155v detects a voltage value between the positive output and negative output of rectifier/smoothing section 150.
  • Current detector 155i detects a current value between rectifier/smoothing section 150 and power storage section 160. The voltage value detected by the voltage detector 155v and the current value detected by the current detector 155i are notified to the control unit 152.
  • Control unit 152 generates the above-mentioned instruction signal according to the power stored in power storage unit 160.
  • control unit 152 when the power stored in power storage unit 160 is less than or equal to a first threshold value, control unit 152 generates an instruction signal to instruct power transmission unit 120 to supply power, that is, to output transmitted AC power.
  • the first threshold value is, for example, the power consumption in a load such as the power consumption member 240.
  • a value obtained by multiplying the power consumption in a load such as the power consuming member 240 by a certain value may be used in consideration of margin.
  • control unit 152 if the power stored in power storage unit 160 is larger than the second threshold, control unit 152 instructs power transmission unit 120 to stop power supply, that is, to stop outputting transmitted AC power. generates an instruction signal.
  • the second threshold is a value that does not exceed the limit stored power of power storage unit 160.
  • the second threshold is, for example, a value obtained by multiplying the limit stored power of power storage unit 160 by a certain value (for example, a value of 1 or less).
  • the rectification/smoothing section 150 includes the communication section 151 described above.
  • the communication unit 151 includes a driver 151d, a transmitter 151tx, and a receiver 151rx.
  • the transmitter 151tx is a wireless signal transmitter or an optical signal transmitter.
  • the receiver 151rx is a radio signal receiver or an optical signal receiver.
  • the communication unit 151 drives the transmitter 151tx using the driver 151d to output a signal from the control unit 122, such as an instruction signal, from the transmitter 151tx as a wireless signal or an optical signal.
  • the signal output from the transmitter 151tx is received by the communication unit 121 of the power transmission unit 120.
  • the communication unit 151 receives a signal from the communication unit 121 using the receiver 151rx, and inputs the received signal to the control unit 152 via the driver 151d.
  • FIG. 15 is a diagram illustrating an RF filter 190 according to one exemplary embodiment.
  • the signal line 1250 is a first signal line that electrically connects the signal output (Tx) of the power transmission section 120 and the signal input (Rx) of the rectification/smoothing section 150, and It may include a second signal line that electrically connects the signal input (Rx) of the rectifying/smoothing section 150 to the signal output (Tx) of the rectifying/smoothing section 150.
  • the signal line 1250 is a signal line that connects the first reference voltage terminal (VCC) of the power transmission section 120 and the first reference voltage terminal (VCC) of the rectification/smoothing section 150, and the second reference voltage terminal (VCC) of the power transmission section 120.
  • a signal line connecting the voltage terminal (GND) and the second reference voltage terminal (GND) of the rectification/smoothing section 150 may be included.
  • Signal line 1250 may be a shielded cable covered with a shield at ground potential. In this case, the plurality of signal lines constituting the signal line 1250 may be individually covered with a shield one by one, or may be covered with a shield all together.
  • the RF filter 190 provides a low pass filter to each of the plurality of signal lines that make up signal line 1250.
  • the low pass filter may be an LC filter including an inductor and a capacitor.
  • the inductor of the low-pass filter forms part of the corresponding signal line.
  • the capacitor is connected between one end of the inductor connected to power transmission section 120 and ground. According to the RF filter 190, it is possible to suppress the propagation of high frequency power (high frequency noise) via the signal line 1250 between the rectification/smoothing section 150 and the power transmission section 120.
  • FIG. 16 is a diagram illustrating a communication section of a power transmission section and a communication section of a rectification/smoothing section according to an exemplary embodiment.
  • FIGS. 17 and 18 each schematically illustrate a plasma processing apparatus according to yet another exemplary embodiment.
  • the communication unit 121 and the communication unit 151 transmit signals such as the above-mentioned instruction signal via wireless communication between each other. It may be configured as follows. Communication via wireless communication may be performed by optical communication. When the communication unit 121 and the communication unit 151 transmit signals between them via wireless communication, the communication unit 121 and the communication unit 151 can be placed at any position unless a shield is interposed between them.
  • the signal line 1250 may be a shielded cable covered with a shield at ground potential.
  • the plurality of signal lines constituting the signal line 1250 may be individually covered with a shield one by one, or may be covered with a shield all together.
  • FIG. 19 is a diagram illustrating a communication section of a power transmission section and a communication section of a rectification/smoothing section according to another exemplary embodiment.
  • FIGS. 20-22 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • the communication unit 121 and the communication unit 151 communicate signals (optical signals) such as the above-mentioned instruction signal between each other via an optical fiber 1260, that is, by optical fiber communication. It may be configured to perform transmission.
  • the communication unit 121 and the communication unit 151 transmit signals between them via the optical fiber 1260
  • the communication unit 121 and the communication unit 151 make sure that the bending radius of the optical fiber 1260 is within an allowable range. For example, it may be placed at any position. In the examples shown in these figures, the RF filter 190 is also unnecessary.
  • FIGS. 23A and 23B are diagram illustrating a power storage unit according to one exemplary embodiment.
  • power storage unit 160 includes a capacitor 161.
  • the capacitor 161 is connected between a pair of power supply lines, that is, a positive line 160p and a negative line 160m.
  • the positive line 160p extends from the positive output (V OUT+ ) of the rectifying/smoothing section 150 toward the load.
  • the negative line 160m extends from the negative output (V OUT- ) of the rectifying/smoothing section 150 toward the load.
  • Capacitor 161 may be a polar capacitor.
  • Capacitor 161 may be an electric double layer or a lithium ion battery.
  • power storage unit 160 may include a plurality of capacitors 161.
  • the plurality of capacitors 161 are connected in series between the plus line 160p and the minus line 160m.
  • the plurality of capacitors 161 may have the same capacitance or may have different capacitances.
  • Each of the plurality of capacitors 161 may be a polar capacitor.
  • Each of the plurality of capacitors 161 may be an electric double layer or a lithium ion battery.
  • Power storage unit 160 needs to be used under the condition that the total value of the input voltage thereto and the line potential difference due to normal mode noise is lower than the allowable input voltage.
  • the allowable input voltage of power storage unit 160 becomes high. Therefore, according to the example shown in FIG. 23(b), the noise resistance of power storage unit 160 is improved.
  • FIG. 24 is a diagram illustrating a voltage controlled converter according to one exemplary embodiment.
  • Voltage control converter 170 is a DC-DC converter. Voltage control converter 170 is connected between power storage unit 160 and constant voltage control unit 180. A positive line 160p is connected to the positive input (V IN+ ) of the voltage controlled converter 170. A negative line 160m is connected to the negative input (V IN- ) of the voltage control converter 170. A positive output (V OUT+ ) of the voltage control converter 170 is connected to a positive input (V IN+ ) of the constant voltage control section 180 . A negative output (V OUT- ) of the voltage control converter 170 is connected to a negative input (V IN- ) of the constant voltage control section 180.
  • Voltage control converter 170 may include a control section 172, a low-pass filter 173, a transformer 174, and a capacitor 175.
  • Low-pass filter 173 may include an inductor 1731a, a capacitor 1732a, and a capacitor 1732b.
  • One end of inductor 1731a is connected to the positive input (V IN+ ) of voltage-controlled converter 170.
  • the other end of the inductor 1731a is connected to one end of the primary coil of the transformer 174.
  • One end of capacitor 1732a is connected to one end of inductor 1731a and the positive input (V IN+ ) of voltage-controlled converter 170.
  • the other end of capacitor 1732a is connected to the negative input (V IN- ) of voltage controlled converter 170.
  • One end of capacitor 1732b is connected to the other end of inductor 1731a.
  • the other end of capacitor 1732b is connected to the negative input (V IN- ) of voltage controlled converter 170.
  • the transformer 174 includes a primary coil 1741, a secondary coil 1742, and a switch 1743.
  • the other end of the primary coil 1741 is connected to the negative input (V IN- ) of the voltage control converter 170 via a switch 1743.
  • One end of the secondary coil 1742 is connected to one end of the capacitor 175 and the positive output (V OUT+ ) of the voltage control converter 170.
  • the other end of the secondary coil 1742 is connected to the other end of the capacitor 175 and the negative output (V OUT ⁇ ) of the voltage control converter 170.
  • a driver 1744 is connected to the switch 1743.
  • Driver 1744 opens and closes switch 1743.
  • the switch 1743 is closed, that is, when the other end of the primary coil 1741 and the negative input (V IN- ) are in a conductive state, the other end of the primary coil 1741 is connected to the negative input (V IN- ) , and the DC power from the voltage control converter 170 is applied to the constant voltage control section 180.
  • Voltage controlled converter 170 may further include a voltage detector 176v and a current detector 176i.
  • Voltage detector 176v detects the voltage value between both ends of secondary coil 1742 or the voltage value between the positive output and negative output of voltage control converter 170.
  • Current detector 176i measures the current value between the other end of secondary coil 1742 and the negative output of voltage control converter 170.
  • the control unit 172 is notified of the voltage value detected by the voltage detector 176v and the current value detected by the current detector 176i. Note that the control section 172 may be the same as or different from at least one of the control section 122 and the control section 152.
  • Control unit 172 controls driver 1744 to cut off the supply of DC power from voltage control converter 170 to constant voltage control unit 180 when the voltage value detected by voltage detector 176v is equal to or higher than the threshold value.
  • the voltage value between the positive output and the negative output of voltage control converter 170 is the sum of the output voltage value of voltage control converter 170 and the line potential difference due to normal mode noise. In this embodiment, damage to the load of voltage control converter 170 due to overvoltage caused by line potential difference due to normal mode noise can be suppressed.
  • Constant voltage control unit 180 is connected between power storage unit 160 and at least one power consumption member 240, and controls application of voltage (application of DC voltage) to at least one power consumption member 240 and stopping thereof. It is configured as follows.
  • Constant voltage control section 180 includes a control section 182 and at least one switch 183.
  • a positive input (V IN+ ) of the constant voltage control section 180 is connected to the power consumption member 240 via a switch 183 .
  • a negative input (V IN- ) of the constant voltage control section 180 is connected to the power consumption member 240.
  • Switch 183 is controlled by control section 182. When switch 183 is closed, DC voltage from constant voltage control section 180 is applied to power consumption member 240 . When switch 183 is open, application of DC voltage from constant voltage control section 180 to power consumption member 240 is stopped.
  • the control unit 182 may be the same as or different from at least one of the control unit 122, the control unit 152, and the control unit 172.
  • the plasma processing apparatus includes a plurality of power consuming members 240.
  • Constant voltage control section 180 includes a control section 182 and a plurality of switches 183.
  • a positive input (V IN+ ) of the constant voltage control section 180 is connected to a plurality of power consumption members 240 via a plurality of switches 183 .
  • a negative input (V IN- ) of the constant voltage control section 180 is connected to the plurality of power consumption members 240.
  • the plurality of power consuming members 240 may include a plurality of heaters (resistance heating elements).
  • a plurality of heaters may be provided within the substrate support section 11.
  • a plurality of resistors 260 are arranged near each of the plurality of heaters.
  • Each of the plurality of resistors 260 has a resistance value that changes depending on temperature.
  • Each of the plurality of resistors 260 is, for example, a thermistor.
  • Each of the plurality of resistors 260 is connected in series with a reference resistor (not shown).
  • Constant voltage control section 180 includes a plurality of measurement sections 184.
  • Each of the plurality of measurement units 184 applies a reference voltage to a series connection of a corresponding resistor among the plurality of resistors 260 and a reference resistor, and detects a voltage value between both ends of the resistor.
  • Each of the plurality of measurement units 184 notifies the control unit 182 of the detected voltage value.
  • the control unit 182 identifies the temperature of the region where the corresponding heater is arranged among the plurality of heaters from the notified voltage value, and controls the DC voltage to the corresponding heater so as to bring the temperature of the region closer to the target temperature.
  • an optical fiber thermometer may be arranged instead of the plurality of resistors 260. In this case, since wiring between the plurality of resistors 260 and the plurality of measurement units 184 is not necessary, the influence of high frequency conductive noise on the power consumption member 240 can be eliminated.
  • the constant voltage control section 180 includes a voltage detector 185v and a plurality of current detectors 185i.
  • Voltage detector 185v detects the voltage value applied to each of the plurality of heaters.
  • the plurality of current detectors 185i measure the value of the current supplied to the corresponding heater among the plurality of heaters, that is, the current value.
  • the plurality of measurement units 184 measure the resistance value of a corresponding one of the plurality of heaters by measuring the current value detected by the corresponding one of the plurality of current detectors 185i and the voltage value detected by the voltage detector 185v.
  • the control unit 182 Specify from The control unit 182 identifies the temperature of each of the plurality of regions in which each of the plurality of heaters is arranged, based on the detected resistance value of each of the plurality of heaters.
  • the control unit 182 controls the application of DC voltage to each of the plurality of heaters so that the temperature of each of the plurality of regions approaches the target temperature.
  • FIGS. 27 to 29 Each of FIGS. 27-29 schematically illustrates a plasma processing apparatus according to yet another exemplary embodiment.
  • Each of the plasma processing apparatuses 100Ga, 100Gb, and 100Gc shown in FIGS. 27 to 29 will be described below from the viewpoint of their differences from the plasma processing apparatus 100E (see FIG. 7).
  • the rectifying/smoothing section 150 and the power storage section 160 are integrated with each other. That is, in each of the plasma processing apparatuses 100Ga, 100Gb, and 100Gc, the rectifying/smoothing section 150 and the power storage section 160 are both arranged in a single metal housing or formed on a single circuit board. In each of the plasma processing apparatuses 100Ga, 100Gb, and 100Gc, an insulating distance may be ensured between each of the rectifying/smoothing section 150, the power storage section 160, and the ground frame 110.
  • the power transmission coil section 130 (or power transmission coil 131) and the power reception coil section 140 (or power reception coil 141) are arranged in a single grounded metal housing. It's okay.
  • both the rectifying/smoothing section 150 and the power storage section 160 may be arranged in the space 110h.
  • both the rectifying/smoothing section 150 and the power storage section 160 may be arranged in the space 110a.
  • an RF filter 200 may be connected between power storage unit 160 and voltage control converter 170 arranged in space 110h.
  • rectifying/smoothing section 150, power storage section 160, and voltage control converter 170 may all be arranged in space 110a.
  • an RF filter 200 may be connected between power storage unit 160 and constant voltage control unit 180 arranged in space 110h.
  • RF filter 200 high frequency conductive noise (common mode noise) is reduced, and a withstand voltage margin of power storage unit 160 is ensured. Further, according to the RF filter 200, it is possible to suppress loss of high frequency power and obtain a high processing rate (for example, etching rate).
  • the RF filter 200 is not provided if an insulation distance is ensured between each of the rectifying/smoothing section 150 and the power storage section 160 and the ground frame 110. You don't have to.
  • FIG. 30 is a diagram illustrating the arrangement of a rectifying and smoothing section according to one exemplary embodiment.
  • FIG. 31 is a diagram illustrating the arrangement of a rectifying and smoothing section according to another exemplary embodiment.
  • the rectifying/smoothing section 150 may be arranged in the space 110h.
  • the power transmitting coil section 130 and the power receiving coil section 140 may be arranged in the metal casing 115 in the space 110a.
  • the metal housing 115 is grounded together with the ground frame 110.
  • the RF filter 200 may be connected between the power receiving coil section 140 and the rectifying/smoothing section 150, or may be arranged in the metal casing 115. In this case, as shown in FIG.
  • the termination capacitor 202a (see FIG. 13) of the RF filter 200 is connected to the metal casing 115, which is the ground, via the wiring 203a.
  • Termination capacitor 202b (see FIG. 13) is connected to metal casing 115, which is the ground, via wiring 203b.
  • an insulating distance may be ensured between the rectifying/smoothing section 150 and the ground frame 110. Furthermore, an insulating distance may be maintained between each power supply line that connects the rectifying/smoothing section 150 and the power receiving coil section 140 to each other and each of the ground frame 110 and the metal casing 115. Further, an insulating distance may be ensured between the RF filter 200 and each of the ground frame 110 and metal housing 115. Further, an insulating distance may be ensured between the power receiving coil section 140 and each of the ground frame 110 and the metal housing 115. Further, an insulating distance may be ensured between the power transmission coil section 130 and each of the ground frame 110 and the metal housing 115.
  • FIGS. 32 and 33 each schematically illustrate a plasma processing apparatus according to yet another exemplary embodiment.
  • FIGS. 34-39 is a diagram illustrating the arrangement of a rectifying/smoothing section according to yet another exemplary embodiment.
  • Each of the plasma processing apparatuses 100Ha and 100Hb shown in FIGS. 32 and 33 will be described below from the viewpoint of their differences from the plasma processing apparatus 100E (see FIG. 7).
  • the rectifying/smoothing section 150 is arranged in the space 110a. This increases the degree of freedom in the layout of other components within the space 110h.
  • rectifying/smoothing section 150 is connected to power storage section 160 provided in space 110h without using RF filter 200. Further, in the plasma processing apparatus 100Ha, the rectifying/smoothing section 150 is connected to the power receiving coil section 140 without using the RF filter 200.
  • the power transmission coil section 130, the power reception coil section 140, and the rectification/smoothing section 150 may be arranged in a metal casing 115 that is grounded together with the ground frame 110. Further, both the power transmitting coil section 130 and the power receiving coil section 140 may be arranged in a single metal housing. As shown in FIG.
  • the rectifying/smoothing section 150 may be separated from the power receiving coil section 140.
  • the rectifying/smoothing section 150 may be integrated with the power receiving coil section 140. That is, both the rectifying/smoothing section 150 and the power receiving coil section 140 may be arranged in a single metal housing, or may be provided on a single circuit board.
  • a power transmitting coil section 130, a power receiving coil section 140, a rectifying/smoothing section 150, a power storage section 160, a power receiving coil section 140 and a rectifying/smoothing section 150 are connected.
  • Each of the pair of power supply lines and the pair of power supply lines connecting rectification/smoothing section 150 and power storage section 160 may have an insulating distance from ground frame 110 and metal casing 115. This may reduce common mode noise.
  • high impedance to high frequency power can be obtained in the rectifying/smoothing section 150 and/or the power receiving coil section 140. Therefore, loss of high frequency power is suppressed, and a high processing rate (for example, etching rate) can be obtained.
  • rectifying/smoothing section 150 is connected to power storage section 160 provided in space 110h without using RF filter 200. Further, in the plasma processing apparatus 100Hb, the rectification/smoothing section 150 is connected to the power receiving coil section 140 via the RF filter 200. In the space 110a, the power transmission coil section 130, the power reception coil section 140, the RF filter 200, and the rectification/smoothing section 150 may be arranged in a metal casing 115 that is grounded together with the ground frame 110. In this case, as shown in FIGS. 36 and 37, the termination capacitor 202a (see FIG.
  • both the power transmitting coil section 130 and the power receiving coil section 140 may be arranged in a single metal housing.
  • the rectifying/smoothing section 150 may be separated from the power receiving coil section 140 and the RF filter 200.
  • the rectification/smoothing section 150 may be integrated with the RF filter 200 and the power receiving coil section 140. That is, the rectifying/smoothing section 150, the RF filter 200, and the power receiving coil section 140 may all be arranged in a single metal housing, or may be provided on a single circuit board.
  • a power transmitting coil section 130, a power receiving coil section 140, an RF filter 200, a rectifying/smoothing section 150, a power storage section 160, a power receiving coil section 140, and an RF filter 200 are connected.
  • a pair of power supply lines connecting RF filter 200 and rectification/smoothing unit 150 , and a pair of power supply lines connecting rectification/smoothing unit 150 and power storage unit 160 are connected to ground frame 110 and power storage unit 160 , respectively. It may have an insulating distance with respect to the metal housing 115. This may reduce common mode noise.
  • the RF filter 200 provides high impedance to high frequency power. Therefore, loss of high frequency power is suppressed, and a high processing rate (for example, etching rate) can be obtained.
  • the RF filter 200 may be connected between the rectifying/smoothing section 150 and the power storage section 160 provided in the space 110h.
  • the power transmitting coil section 130, the power receiving coil section 140, the rectifying/smoothing section 150, and the RF filter 200 may be arranged in a metal casing 115 that is grounded together with the ground frame 110 in the space 110a.
  • the termination capacitor 202a (see FIG. 13) of the RF filter 200 is connected to the metal casing 115, which is the ground, via the wiring 203a.
  • Termination capacitor 202b (see FIG. 13) is connected to metal casing 115, which is the ground, via wiring 203b.
  • both the power transmitting coil section 130 and the power receiving coil section 140 may be arranged in a single metal housing.
  • the rectifying/smoothing section 150 may be separated from the power receiving coil section 140 and the RF filter 200.
  • the rectification/smoothing section 150 may be integrated with the RF filter 200 and the power receiving coil section 140. That is, the rectifying/smoothing section 150, the RF filter 200, and the power receiving coil section 140 may all be arranged in a single metal housing, or may be provided on a single circuit board.
  • the power transmission coil section 130, the power reception coil section 140, the rectification/smoothing section 150, the RF filter 200, the power storage section 160, the power reception coil section 140, and the rectification/smoothing section 150 are Each of the pair of power supply lines to be connected, the pair of power supply lines to be connected to the rectifier/smoothing section 150 and the RF filter 200, and the pair of power supply lines to be connected to the RF filter 200 and the power storage section 160 are connected to the ground frame 110 and the metal casing. 115 may have an insulating distance. This may reduce common mode noise. Further, the RF filter 200 provides high impedance to high frequency power. Therefore, loss of high frequency power is suppressed, and a high processing rate (for example, etching rate) can be obtained.
  • a high processing rate for example, etching rate
  • the power transmission voltage may be set to a high voltage level in order to transmit large amounts of power with high efficiency. Therefore, the withstand voltage of each part of the plasma processing apparatus can be improved.
  • power storage unit 160 may include a plurality of capacitors connected in series between positive line 160p and negative line 160m that constitute a pair of power supply lines.
  • the plus line and the minus line forming the pair of power supply lines may have the same length and may have an insulating distance between them. This increases the withstand voltage against conductive noise.
  • the withstand voltage of each of the power transmitting coil 131 and the power receiving coil 141 can be increased by selecting the pitch between the windings constituting them and the material and thickness of the coating or film of the winding. Further, the low-pass filter capacitor and the resonant capacitor, such as the above-mentioned termination capacitor, are selected to have a withstand voltage higher than the transmission voltage. Furthermore, in order to increase the withstand voltage, the ferrite material of each of the power transmitting coil section 130 and the power receiving coil section 140 is arranged so as to have an insulating distance from the ground. Further, in order to increase the withstand voltage, each of the heat conductive sheets of the power transmitting coil section 130 and the power receiving coil section 140 is selected to have a dielectric strength higher than the transmission voltage.
  • FIGS. 40-43 are diagrams illustrating exemplary embodiments for reducing line-to-line potential differences due to conducted noise.
  • Conducted noise can be caused by the impedance difference between the positive and negative lines.
  • the line between the plus line and the minus line that constitutes the power supply line between the power storage unit 160 and the power consumption member 240 is One or more capacitors may be connected to.
  • Each capacitor may be a non-polar capacitor.
  • the non-polar capacitor is selected from film capacitors, ceramic capacitors, multilayer ceramic capacitors, etc., depending on the frequency of high-frequency power used in the plasma processing apparatus. This reduces the line-to-line potential difference that occurs between the plus line and the minus line due to conductive noise.
  • one or more capacitors may be connected between a positive line and a negative line that connect power storage unit 160 and each of one or more voltage-controlled converters 170 to each other.
  • one or more capacitors are connected between the positive line and the negative line that connect each of the one or more voltage control converters 170 and the corresponding constant voltage control section 180 to each other. may have been done.
  • a capacitor 511 is connected between a positive line 160p and a negative line 160m that connect power storage unit 160 and voltage control converter 170 to each other.
  • a capacitor 521 is connected between a positive line 178p and a negative line 178m that connect the voltage control converter 170 and the constant voltage control section 180 to each other.
  • the positive line 178p connects the positive output (V OUT+ ) of the voltage control converter 170 and the positive input (V IN+ ) of the constant voltage control section 180 to each other.
  • the negative line 178m connects the negative output (V OUT- ) of the voltage control converter 170 and the negative input (V IN- ) of the constant voltage control section 180 to each other.
  • Each of capacitor 511 and capacitor 521 may be a non-polar capacitor.
  • a capacitor 511 and a capacitor 512 are connected in parallel between a positive line 160p and a negative line 160m that connect power storage unit 160 and voltage control converter 170 to each other.
  • Capacitor 511 and capacitor 512 may have the same capacitance or may have different capacitances.
  • a capacitor 521 and a capacitor 522 are connected in parallel between a positive line 178p and a negative line 178m that connect the voltage control converter 170 and the constant voltage control unit 180 to each other.
  • Capacitor 521 and capacitor 522 may have the same capacitance or may have different capacitances.
  • Each of capacitor 511, capacitor 512, capacitor 521, and capacitor 522 may be a non-polar capacitor.
  • capacitors with different capacitances may be connected in parallel between the positive line and the negative line, this characteristic reduces the line-to-line potential difference caused by higher frequency conductive noise.
  • Two or more capacitors may be arranged such that the capacitor having the power dissipating member 240 is connected at a position where the electrical length from the power consuming member 240 is shorter. That is, a high frequency capacitor (a capacitor with a relatively small capacitance) may be placed closer to the power consumption member 240.
  • capacitor 512 and capacitor 522 are high frequency capacitors.
  • the capacitor 511 and the capacitor 521 are low frequency capacitors.
  • two voltage control converters 170 are connected in parallel between power storage unit 160 and constant voltage control unit 180.
  • a positive line 160p connected to power storage unit 160 branches into positive lines 160pa and 160pb.
  • the positive line 160pa is connected to the positive input (V IN+ ) of one of the two voltage-controlled converters 170.
  • the positive line 160pb is connected to the other positive input (V IN+ ) of the two voltage controlled converters 170.
  • Minus line 160m connected to power storage unit 160 is branched into minus lines 160ma and 160mb.
  • the negative line 160ma is connected to the negative input (V IN- ) of one of the two voltage-controlled converters 170.
  • the negative line 160mb is connected to the negative input (V IN- ) of the other of the two voltage controlled converters 170.
  • V IN- negative input
  • three or more voltage-controlled converters 170 may be connected in parallel. In this case, the maximum output powers of the three or more voltage-controlled converters 170 may be the same or different.
  • the positive line 178p connected to the positive input (V IN+ ) of the constant voltage control section 180 is branched into a positive line 178pa and a positive line 178pb.
  • the positive line 178pa is connected to the positive output (V OUT+ ) of one of the two voltage control converters 170.
  • the positive line 178pb is connected to the other positive output (V OUT+ ) of the two voltage-controlled converters 170.
  • the negative line 178m connected to the negative input (V IN- ) of the constant voltage control section 180 is branched into a negative line 178ma and a negative line 178mb.
  • the negative line 178ma is connected to the negative output (V OUT- ) of one of the two voltage-controlled converters 170.
  • the negative line 178mb is connected to the negative output (V OUT- ) of the other of the two voltage controlled converters 170. Note that each of the positive line 178p connected to the positive input (V IN+ ) of the constant voltage control unit 180 and the negative line 178m connected to the negative input (V IN ⁇ ) of the constant voltage control unit 180 has three or more May branch into lines.
  • a capacitor 511 is connected between the plus line 160pa and the minus line 160ma. Further, a capacitor 512 is connected between the plus line 160 pb and the minus line 160 mb. Further, a capacitor 521 is connected between the plus line 178p and the minus line 178m.
  • Each of capacitor 511, capacitor 512, and capacitor 521 may be a non-polar capacitor. Further, each of the capacitors 511, 512, and 521 may have the same capacitance or may have different capacitances.
  • two power supply systems are connected to power storage unit 160.
  • Each of the two power supply systems includes a voltage control converter 170 and a constant voltage control section 180.
  • the two power supply systems are connected to two power consumption members 240, respectively. That is, two voltage control converters 170 are connected to power storage unit 160, two constant voltage control units 180 are respectively connected to two voltage control converters 170, and two constant voltage control units 180 are connected to each other. It is connected to two power consumption members 240, respectively. Note that three or more power supply systems may be connected to power storage unit 160.
  • a positive line 160p connected to power storage unit 160 branches into positive lines 160pa and 160pb.
  • the positive line 160pa is connected to the positive input (V IN+ ) of one of the two voltage-controlled converters 170.
  • the positive line 160pb is connected to the other positive input (V IN+ ) of the two voltage controlled converters 170.
  • Minus line 160m connected to power storage unit 160 is branched into minus lines 160ma and 160mb.
  • the negative line 160ma is connected to the negative input (V IN- ) of one of the two voltage-controlled converters 170.
  • the negative line 160mb is connected to the negative input (V IN- ) of the other of the two voltage controlled converters 170.
  • the positive line 178pc connects the positive output (V OUT+ ) of one of the two voltage control converters and the positive input (V IN+ ) of one of the two constant voltage control units 180 to each other.
  • a negative line 178mc connects the negative output (V OUT ⁇ ) of one of the two voltage control converters and the negative input (V IN+ ) of one of the two constant voltage control units 180 to each other.
  • a positive line 178pd connects the positive output (V OUT+ ) of the other of the two voltage control converters and the positive input (V IN+ ) of the other of the two constant voltage control units 180 to each other.
  • a negative line 178md connects the negative output (V OUT ⁇ ) of the other of the two voltage control converters and the negative input (V IN+ ) of the other of the two constant voltage control units 180 to each other.
  • a capacitor 511 is connected between the plus line 160pa and the minus line 160ma. Further, a capacitor 512 is connected between the plus line 160 pb and the minus line 160 mb. Further, a capacitor 521 is connected between the plus line 178pc and the minus line 178mc. Further, a capacitor 522 is connected between the plus line 178pd and the minus line 178md.
  • Each of capacitor 511, capacitor 512, capacitor 521, and capacitor 522 may be a non-polar capacitor. Further, each of capacitor 511, capacitor 512, capacitor 521, and capacitor 522 may have the same capacitance or may have different capacitance.
  • FIG. 14 and FIGS. 44 to 46 are diagrams illustrating a rectifying and smoothing section according to another exemplary embodiment.
  • the voltage after rectification by the rectifier circuit 153 of the rectifier/smoothing section 150 (output voltage of the rectifier circuit 153) has an amplitude that fluctuates at a frequency twice the transmission frequency.
  • the smoothing circuit 154 can be configured to reduce the fluctuation (amplitude) of the output voltage even if the load fluctuation as described above occurs. Thereby, rectifier/smoothing unit 150 enables power supply even when load fluctuation occurs, and ensures a withstand voltage margin of power storage unit 160.
  • the smoothing circuit 154 is configured so that the ratio (amplitude ratio) of the output voltage of the smoothing circuit 154 to the amplitude of the output voltage of the rectifier circuit 153 is 3% or less. Further, the smoothing circuit 154 is configured so that the cutoff frequency/(2 ⁇ transmission frequency) is smaller than 1/10.
  • the capacitance of at least one smoothing capacitor is set so that the smoothing circuit 154 has the above-described characteristics.
  • the capacitance of the capacitor 1542b is set so that the smoothing circuit 154 has the above-described characteristics.
  • a capacitor 1542b and a capacitor 1542c are connected in parallel between the plus line and the minus line between the inductor 1541a and the positive output (V OUT+ ) of the rectifying/smoothing section 150.
  • the combined capacitance of capacitor 1542b and capacitor 1542c is set so that smoothing circuit 154 has the above-mentioned characteristics.
  • an inductor 1541b is connected between the other end of the capacitor 1542a and the other end of the capacitor 1542b.
  • the rectifying/smoothing section 150 shown in FIG. 45 does not need to include the capacitor 1542a.
  • the rectifying/smoothing section 150 shown in FIG. 45 does not need to include the capacitor 1542a and the inductor 1541b.
  • the rectifying/smoothing section 150 shown in FIG. 45 does not need to include the inductor 1541a and the inductor 1541b.
  • an inductor 1541a and an inductor 1541c are connected in series between one end of a capacitor 1542a and one end of a capacitor 1542b. Further, an inductor 1541v and an inductor 1541d are connected in series between the other end of the capacitor 1542a and the other end of the capacitor 1542b.
  • the rectifying/smoothing section 150 shown in FIG. 46 does not need to include the inductor 1541b and the inductor 1541d.
  • FIG. 47 is a diagram illustrating a rectifying/smoothing section and a constant voltage control section according to another exemplary embodiment.
  • the constant voltage control unit 180 controls the voltage application to the power consumption member 240 and the voltage application in synchronization with the transmission AC power transmitted between the power transmission coil unit 130 and the power reception coil unit 140. Configured to control outage.
  • the rectification/smoothing section 150 may include a synchronous pulse generation section 156. Further, the rectification/smoothing section 150 may further include a level adjustment section 157.
  • FIG. 48 is a timing chart of an example of the output voltage in the power receiving coil section and the signals output from each section of the rectification/smoothing section.
  • the output power of power receiving coil section 140 has a transmission frequency.
  • the rectifier circuit 153 performs full-wave rectification on the output power of the power receiving coil section 140 to output a voltage having a frequency twice the transmission frequency.
  • the synchronous pulse generator 156 generates a pulsed signal from the output voltage of the rectifier circuit 153.
  • the synchronous pulse generation unit 156 rises when the output voltage of the rectifier circuit 153 has the first reference voltage level while the voltage level is rising, and the synchronous pulse generator 156 rises when the output voltage of the rectifier circuit 153 has the first reference voltage level while the voltage level is rising.
  • a pulsed signal that falls when the second reference voltage level is present is generated.
  • the synchronization pulse generation unit 156 generates a synchronization pulse signal that alternately changes to an ON state and an OFF state at the rising edge of a pulsed signal.
  • the signal level of the synchronization pulse signal may be adjusted by the level adjustment section 157.
  • the constant voltage control unit 180 shown in FIG. 47 is configured to adjust the timing of applying voltage to the power consumption member 420 and the timing of stopping the voltage application based on a synchronization pulse signal (or a synchronization pulse signal whose level has been adjusted). ing.
  • FIGS. 49 and 50 is an example timing chart related to the constant voltage control section shown in FIG. 47.
  • the operating clock is the operating clock OC of the control section 182 of the constant voltage control section 180 (see FIG. 47).
  • each control signal is a signal for applying and stopping voltage application to the corresponding power consumption member 240. When the control signal has an ON state, a voltage is applied from the constant voltage control unit 180 to the corresponding power consumption member 240, and when the control signal has an OFF state, a voltage is applied from the constant voltage control unit 180 to the corresponding power consumption member 240. The voltage application is stopped.
  • the control unit 182 controls a plurality of states that alternately transition to an ON state and an OFF state at a cycle of a synchronization pulse signal (or a level-adjusted synchronization pulse signal), that is, a cycle that is twice the transmission AC power. generates a control signal.
  • the control unit 182 sets the delay amount of each control signal so that the delay amount of the synchronization pulse signal (or the level-adjusted synchronization pulse signal) is an integral multiple of the period of the operation clock. This makes it possible to arbitrarily control the timing of voltage application from the constant voltage control section 180 to the power consumption member 240.
  • the constant voltage control unit 180 may communicate with the control unit 2 of the plasma processing system.
  • the constant voltage control unit 180 can select synchronous or asynchronous control of the power consumption member 240 and other units that can communicate with the control unit 2, optimizing plasma processing and/or concentrating power consumption. It is possible to avoid this.
  • the other units are, for example, the first RF generation section 31a, the second RF generation section 32a, the gas supply section 20, and/or the exhaust system 40.
  • the control unit 182 controls a plurality of control signals that alternately transition to an ON state and an OFF state at the cycle of the synchronization pulse signal (or the level-adjusted synchronization pulse signal), that is, the cycle of the transmitted AC power. generate.
  • the control unit 182 sets the delay amount of each control signal so that the delay amount of the synchronization pulse signal (or the level-adjusted synchronization pulse signal) is an integral multiple of the period of the operation clock. This makes it possible to arbitrarily control the timing of voltage application from the constant voltage control section 180 to the power consumption member 240.
  • the constant voltage control unit 180 may communicate with the control unit 2 of the plasma processing system.
  • the constant voltage control unit 180 can select synchronous or asynchronous control of the power consumption member 240 and other units that can communicate with the control unit 2, optimizing plasma processing and/or concentrating power consumption. It is possible to avoid this.
  • the other units are, for example, the first RF generation section 31a, the second RF generation section 32a, the gas supply section 20, and/or the exhaust system 40.
  • FIG. 51 is a diagram schematically illustrating a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 52 is a diagram illustrating a power storage unit in a plasma processing apparatus according to yet another exemplary embodiment.
  • the plasma processing apparatus 100Ja shown in FIG. 51 will be described below from the viewpoint of its differences from the plasma processing apparatus 100C (see FIG. 5).
  • Plasma processing apparatus 100Ja includes power storage unit 160J instead of power storage unit 160.
  • power storage unit 160J includes a plurality of non-polar capacitors 161J.
  • the plurality of non-polar capacitors 161J are connected in parallel between the plus line 160p and the minus line 160m.
  • Each of the plurality of non-polar capacitors 161J is selected from film capacitors, ceramic capacitors, multilayer ceramic capacitors, and the like.
  • Such power storage unit 160J has a high withstand voltage.
  • the plurality of non-polar capacitors 161J may have the same capacitance or may have different capacitances.
  • the plasma processing apparatus 100Ja includes one or more input/output devices 241 and one or more sensors 242 as other power consumption members.
  • the one or more input/output devices 241 include an actuator (stepping motor or servo motor) used in the plasma processing apparatus 100Ja, a light emitting device, a control circuit, a power generation unit for each input/output device 241, and a power source for an electrostatic chuck. , a switch, and a thermistor.
  • the one or more sensors 242 include one or more of various sensors and cameras that detect conditions within the chamber 10. A DC voltage is applied to each of the one or more input/output devices 241 and the one or more sensors 242 from one of the power storage unit 160J, the voltage control converter 170, and the constant voltage control unit 180.
  • FIG. 53 is a diagram schematically illustrating a plasma processing apparatus according to yet another exemplary embodiment.
  • the plasma processing apparatus 100Jb shown in FIG. 53 will be described below from the viewpoint of its differences from the plasma processing apparatus 100Ja.
  • Plasma processing apparatus 100Jb includes power storage unit 160 described above in addition to power storage unit 160J.
  • a voltage is applied from constant voltage control section 180 to power consumption member 240 such as a heater that requires relatively large amount of power, using the power stored in power storage section 160 .
  • power consumption member 240 such as a heater that requires relatively large amount of power
  • power stored in power storage unit 160J is used to provide power storage unit 160J
  • a DC voltage is applied from either the voltage control converter 170 or the constant voltage control section 180.
  • FIG. 54 is a diagram illustrating a power storage unit in a plasma processing apparatus according to yet another exemplary embodiment.
  • the plus line 160p connected to the positive output (V OUT+ ) of the rectifying/smoothing section 150 is branched into a plus line 160pa and a plus line 160pb.
  • the plus line 160pa is a part of the plus line connected between the rectifying/smoothing section 150 and the constant voltage control section 180.
  • the positive line 160pb is a part of the positive line connected between the rectifying/smoothing section 150 and the sensor 242.
  • the minus line 160m connected to the negative output (V OUT- ) of the rectifying/smoothing section 150 is branched into a minus line 160ma and a minus line 160mb.
  • the minus line 160ma is a part of the minus line connected between the rectification/smoothing section 150 and the constant voltage control section 180.
  • the minus line 160mb is a part of the minus line connected between the rectifying/smoothing section 150 and the sensor 242.
  • Power storage unit 160 includes at least one capacitor 161 that is a polar capacitor. As described above in relation to the plasma processing apparatus 100Jb, the power consumption member 240, such as the heater, which requires relatively large power, uses the power stored in the power storage unit 160 to operate the constant voltage control unit 180. A voltage is applied from
  • the positive line 160pb includes a switch 162p and a switch 163p.
  • Minus line 160mb includes switch 162m and switch 163m.
  • Power storage unit 160J is connected to positive line 160pb between switch 162p and switch 163p. Furthermore, power storage unit 160J is connected to negative line 160mb between switch 162m and switch 163m.
  • Switch 162p and switch 162m are closed until charging of power storage unit 160J is completed.
  • the opening and closing of the switch 162p and the switch 162m is controlled by the control section 152 of the rectification/smoothing section 150.
  • Switch 163p and switch 163m are open when the plasma processing apparatus is in a normal operating state. That is, when the plasma processing apparatus is in a normal operating state, voltage application from power storage unit 160J to one or more sensors 242 is stopped.
  • the switch 163p and the switch 163m are closed by a signal from a control mechanism such as an interlock mechanism when an abnormality in the plasma processing apparatus is detected.
  • power storage unit 160J can be used as a low-power power storage unit for data acquisition and data logging of one or more sensors 242 placed at a position exposed to high frequency energy.
  • FIG. 55 is a diagram schematically illustrating a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 56 is a diagram illustrating connections of multiple voltage controlled converters in a plasma processing apparatus according to yet another exemplary embodiment.
  • the plasma processing apparatus 100Ka shown in FIG. 55 will be described below from the viewpoint of its differences from the plasma processing apparatus 100E (see FIG. 7).
  • the plasma processing apparatus 100Ka includes a plurality of voltage control converters 170Ka and Kb. Each of the plurality of voltage controlled converters 170Ka, Kb has the same configuration as the voltage controlled converter 170. A plurality of voltage control converters 170Ka and Kb are connected in parallel between power storage unit 160 and constant voltage control unit 180.
  • the positive line 160p is connected to the positive input (V IN+ ) of each of the plurality of voltage controlled converters 170Ka and Kb.
  • the negative line 160m is connected to the negative input (V IN- ) of each of the plurality of voltage controlled converters 170Ka and Kb.
  • the positive output (V OUT+ ) of each of the plurality of voltage control converters 170Ka, Kb is connected to the positive input (V IN+ ) of the constant voltage control section 180.
  • the negative output (V OUT ⁇ ) of each of the plurality of voltage control converters 170Ka, Kb is connected to the negative input (V IN ⁇ ) of the constant voltage control section 180.
  • the plasma processing apparatus 100Ka by connecting the plurality of voltage control converters 170Ka and Kb in parallel, a large output current capacity can be obtained, and a large maximum output power can be obtained.
  • the maximum output power of each of the plurality of voltage control converters 170Ka and voltage control converter 170Kb may be the same or different.
  • FIG. 57 is a diagram schematically illustrating a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 58 is a diagram schematically illustrating a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 59 is a diagram illustrating connections of a plurality of voltage controlled converters in a plasma processing apparatus according to yet another exemplary embodiment.
  • the plasma processing apparatus 100Kb shown in FIG. 57 and the plasma processing apparatus 100Kc shown in FIG. 58 will be described below from the viewpoint of their differences from the plasma processing apparatus 100Ka.
  • each of the plasma processing apparatuses 100Kb and Kc a plurality of power supply systems are connected to the power storage unit 160.
  • each of the plasma processing apparatuses 100Kb and Kc includes a plurality of constant voltage control sections 180Ka and 180Kb.
  • One of the plurality of power supply systems includes a voltage control converter 170Ka and a constant voltage control section 180Ka.
  • Another one of the plurality of power supply systems includes a voltage control converter 170Kb and a constant voltage control section 180Kb.
  • the positive line 160p is connected to the positive input (V IN+ ) of each of the plurality of voltage controlled converters 170Ka and Kb.
  • the negative line 160m is connected to the negative input (V IN- ) of each of the plurality of voltage controlled converters 170Ka and Kb.
  • the positive output (V OUT+ ) of the voltage control converter 170Ka is connected to the positive input (V IN+ ) of the constant voltage control unit 180Ka
  • the negative output (V OUT ⁇ ) of the voltage control converter 170Ka is connected to the constant voltage control unit 180Ka.
  • the plurality of constant voltage control sections 180Ka and 180Kb are connected to one or more power consumption members such as one or more heaters provided in the substrate support section 11. 240.
  • the constant voltage control section 180Ka is connected to one or more power consumption members 240, such as one or more heaters provided in the substrate support section 11. ing.
  • the constant voltage control section 180Kb is connected to at least one input/output device 241 and/or at least one sensor 242.
  • the plasma processing apparatuses 100Kb and 100Kc According to the plasma processing apparatuses 100Kb and 100Kc, a large maximum output power can be obtained due to the plurality of power supply systems. Further, according to the plasma processing apparatuses 100Kb and 100Kc, it is possible to control voltage application to separate power consumption members for each power supply system.
  • FIG. 60 is a diagram schematically illustrating a plasma processing apparatus according to yet another exemplary embodiment.
  • the plasma processing apparatus 100La shown in FIG. 60 will be described below from the viewpoint of its differences from the plasma processing apparatus 100E (see FIG. 7).
  • the plasma processing apparatus 100La includes a power transmission section 120L having a communication section 121L, a power transmission coil section 130L, a power receiving coil section 140L, an RF filter 200L, a rectification/smoothing section 150L having a communication section 151L, a power storage section 160L, a voltage control converter 170L, and It further includes a constant voltage control section 180L.
  • the power transmission section 120L, the communication section 121L, the power transmission coil section 130L, the power reception coil section 140L, the RF filter 200L, the rectification/smoothing section 150L, the communication section 151L, the power storage section 160L, the voltage control converter 170L, and the constant voltage control section 180L are respectively configured to transmit power. 120, communication section 121, power transmission coil section 130, power reception coil section 140, RF filter 200, rectification/smoothing section 150, communication section 151, power storage section 160, voltage control converter 170, and constant voltage control section 180L. ing.
  • the power transmission section 120, the power transmission coil section 130, the power reception coil section 140, the RF filter 200, the rectification/smoothing section 150, the power storage section 160, the voltage control converter 170, and the constant voltage control section 180 constitute a first power supply system.
  • the power transmission section 120L, the power transmission coil section 130L, the power reception coil section 140L, the RF filter 200L, the rectification/smoothing section 150L, the power storage section 160L, the voltage control converter 170L, and the constant voltage control section 180L constitute a second power supply system. There is.
  • the power transmission unit 120L In the second power supply system, the power transmission unit 120L generates transmitted AC power from the AC power supply 400L.
  • the power transmitting section 120L is connected to the power transmitting coil section 130L, and the power transmitting coil section 130L is electromagnetically coupled to the power receiving coil section 140L.
  • the power receiving coil section 140L is connected to a rectifying/smoothing section 150L via an RF filter 200L.
  • Power storage unit 160L is connected between rectifier/smoothing unit 150L and voltage control converter 170L.
  • the constant voltage control section 180L is connected to at least one input/output device 241 and/or at least one sensor 242.
  • the plasma processing apparatus 100La has a plurality of power supply systems each including a power transmission coil section and a power reception coil section. Therefore, the plasma processing apparatus 100La can employ small-sized coils as each power transmitting coil and each power receiving coil, increasing the degree of freedom in the layout of their arrangement. Furthermore, it is possible to supply large amounts of power by wireless power supply. Each of the plurality of power supply systems may supply the same power or may supply different power.
  • FIG. 61 is a diagram schematically illustrating a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 62 is a diagram illustrating a rectifying and smoothing section according to yet another exemplary embodiment.
  • the plasma processing apparatus 100Lb shown in FIG. 61 will be described below from the viewpoint of its differences from the plasma processing apparatus 100La.
  • the plasma processing apparatus 100Lb includes a first power supply system and a second power supply system similarly to the plasma processing apparatus 100La.
  • a single rectifying/smoothing section 150 is connected between RF filter 200 and power storage section 160, and between RF filter 200L and power storage section 160L. That is, the first power supply system and the second power supply system share the rectification/smoothing section 150.
  • the single power transmission section 120 is connected to the power transmission coil section 130 and the power transmission coil section 130L. That is, the first power supply system and the second power supply system share the power transmission section 120.
  • the rectification/smoothing section 150 further includes a rectification circuit 153L and a smoothing circuit 154L.
  • the rectifier circuit 153L and the smoothing circuit 154L are configured similarly to the rectifier circuit 153 and the smoothing circuit 154, respectively.
  • Rectifier circuit 153 is connected to smoothing circuit 154, and smoothing circuit 154 is connected to power storage unit 160.
  • rectifier circuit 153L is connected to smoothing circuit 154L, and smoothing circuit 154L is connected to power storage unit 160L.
  • the rectification/smoothing unit 150 sends an instruction signal to the power transmission unit 120 to individually control the power supply by the power supply system including the power transmission coil unit 130 and the power supply by the power supply system including the power transmission coil unit 130L. Can be sent.
  • FIG. 63 is a diagram schematically illustrating a plasma processing apparatus according to yet another exemplary embodiment.
  • FIG. 64 is a diagram illustrating a rectifying and smoothing section according to yet another exemplary embodiment.
  • the plasma processing apparatus 100Lc shown in FIG. 63 will be described below from the viewpoint of its differences from the plasma processing apparatus 100Lb.
  • the plasma processing apparatus 100Lc includes a first power supply system and a second power supply system similarly to the plasma processing apparatus 100Lb. However, in the plasma processing apparatus 100Lc, the first power supply system and the second power supply system share the rectification/smoothing section 150, the power storage section 160, the voltage control converter 170, and the constant voltage control section 180. Specifically, rectification/smoothing section 150 is connected between RF filter 200 and power storage section 160, and between RF filter 200L and power storage section 160L.
  • the rectification/smoothing section 150 includes a rectification circuit 153L in addition to a rectification circuit 153 and a smoothing circuit 154.
  • the rectifier circuit 153 is connected between the power receiving coil section 140 and the smoothing circuit 154, and the rectifier circuit 153L is connected between the power receiving coil section 140L and the smoothing circuit 154.
  • rectifier circuit 153L may be connected to power storage unit 160 via another smoothing circuit 154L.
  • the rectification/smoothing unit 150 sends an instruction signal to the power transmission unit 120 to individually control the power supply by the power supply system including the power transmission coil unit 130 and the power supply by the power supply system including the power transmission coil unit 130L. Can be sent.
  • FIG. 65 is a diagram showing a power transmitting coil section and a power receiving coil section in a plasma processing apparatus according to yet another exemplary embodiment.
  • the power transmission coil section 130 includes a plurality of power transmission coils 131.
  • the plurality of power transmission coils 131 are connected in series between a resonance capacitor 132a and a resonance capacitor 132b.
  • the power receiving coil section 140 includes a plurality of power receiving coils 141.
  • the plurality of power receiving coils 141 are electromagnetically coupled to their corresponding power transmitting coils 131.
  • the plurality of power receiving coils 141 are connected in series between a resonant capacitor 142a and a resonant capacitor 142b.
  • each of the power transmitting coil section 130 and the power receiving coil section 140 includes a plurality of coils connected in series, a coil having a small inductance and a small size may be employed as each of the plurality of coils. Therefore, the degree of freedom in layout of the plurality of coils is increased. Furthermore, it becomes possible to supply large amounts of power.
  • FIG. 66 is a diagram showing a power transmitting coil section and a power receiving coil section in a plasma processing apparatus according to yet another exemplary embodiment.
  • the power transmission coil section 130 includes a plurality of power transmission coils 131.
  • the plurality of power transmission coils 131 are connected in parallel between a resonance capacitor 132a and a resonance capacitor 132b.
  • the power receiving coil section 140 includes a plurality of power receiving coils 141.
  • the plurality of power receiving coils 141 are electromagnetically coupled to their corresponding power transmitting coils 131.
  • the plurality of receiving coils 141 are connected in parallel between a resonant capacitor 142a and a resonant capacitor 142b.
  • FIG. 67 is a diagram showing a power transmitting coil section and a power receiving coil section in a plasma processing apparatus according to yet another exemplary embodiment.
  • the power transmission coil section 130 includes a plurality of power transmission coils 131, a plurality of resonance capacitors 132a, and a plurality of resonance capacitors 132b.
  • the plurality of power transmitting coils 131, the plurality of resonant capacitors 132a, and the plurality of resonant capacitors 132b constitute a plurality of resonant circuits connected in parallel to the power transmitting unit 120.
  • Each of the plurality of resonant circuits includes a resonant capacitor 132a, a power transmission coil 131, and a resonant capacitor 132b connected in series.
  • the power receiving coil section 140 includes a plurality of power receiving coils 141, a plurality of resonance capacitors 142a, and a plurality of resonance capacitors 142b.
  • the plurality of power receiving coils 141 are electromagnetically coupled to their corresponding power transmitting coils 131.
  • the plurality of power receiving coils 141, the plurality of resonant capacitors 142a, and the plurality of resonant capacitors 142b constitute a plurality of resonant circuits connected in parallel to the RF filter 200.
  • Each of the plurality of resonant circuits includes a resonant capacitor 142a, a power receiving coil 141, and a resonant capacitor 142b connected in series.
  • each of the power transmitting coil section 130 and the power receiving coil section 140 includes a plurality of coils connected in parallel, and has a plurality of resonant circuits each including a plurality of coils. There is. Since a plurality of resonant circuits can be configured individually in this way, high power feeding efficiency is maintained. Furthermore, the degree of freedom in layout of the plurality of coils is increased. Furthermore, it becomes possible to supply large amounts of power.
  • FIG. 68 is a flowchart of a method for storing power in a power storage unit according to one exemplary embodiment.
  • power can be stored in power storage unit 160 (or power storage unit 160J) by the power storage method shown in FIG. 68.
  • step STAa power is supplied from the mounted power storage unit 160 to the rectification/smoothing unit 150.
  • step STAb communication is established between the rectification/smoothing section 150 and the power transmission section 120.
  • step STAc it is determined whether the electric power of power storage unit 160 is sufficient to operate rectification/smoothing unit 150. This determination may be performed in the control section 152 of the rectification/smoothing section 150. If the power of power storage unit 160 is insufficient to operate rectification/smoothing unit 150, step STAd is performed. In step STAd, the rectification/smoothing section 150 transmits an instruction signal to the power transmission section 120, so that power supply from the power transmission section 120 is started, and power storage (initial charging) of the power storage section 160 is performed.
  • step STAe the constant voltage control unit 180 starts outputting voltage to a load such as the power consumption member 240.
  • step STAf it is determined whether the power in power storage unit 160 is sufficient to power a load such as power consumption member 240. This determination may be performed in the control section 152 of the rectification/smoothing section 150.
  • step STAf the power of power storage unit 160 is determined to be insufficient, for example, when the power is equal to or less than the above-mentioned first threshold value. If the power in power storage unit 160 is insufficient, step STAg is performed.
  • step STAg the rectifying/smoothing unit 150 transmits an instruction signal to the power transmitting unit 120 to instruct the power transmitting unit 120 to supply power.
  • step STAh power transmission unit 120 starts supplying power to power storage unit 160. After that, the process proceeds to step STAj.
  • step STAf determines whether the power in power storage unit 160 is sufficient. If it is determined in step STAf that the power in power storage unit 160 is sufficient, the power supply by power transmission unit 120 is stopped by transmitting an instruction signal from rectification/smoothing unit 150 to power transmission unit 120. In step STAf, the power of power storage unit 160 is determined to be sufficient, for example, when the power is greater than the above-mentioned second threshold. After that, the process proceeds to step STAj.
  • step STAj it is determined whether or not it is necessary to continue supplying power to a load such as the power consuming member 240. This determination may be performed in the control section 152 of the rectification/smoothing section 150. If it is determined that it is necessary to continue power supply to the load, the process returns to step STAc. On the other hand, if it is determined that there is no need to continue supplying power to the load, the process of the power storage method ends.
  • a plasma processing apparatus comprising:
  • the spacer is formed from a dielectric material and is provided between the at least one power receiving coil and the ground, and further includes a spacer that provides a spatial stray capacitance between the at least one power receiving coil and the ground. , E1 to E3.
  • the distance between the at least one power receiving coil and the at least one power transmitting coil is such that the amount of attenuation of the high frequency power between the at least one power receiving coil and the at least one power transmitting coil is ⁇ 20 dB or less. , and is configured such that the at least one power receiving coil can receive power from the at least one power transmitting coil.
  • E7 a rectifier circuit connected to the at least one power receiving coil; a smoothing circuit connected between the rectifier circuit and the at least one power storage unit;
  • the plasma processing apparatus according to any one of E1 to E6, further comprising a rectifying/smoothing section.
  • E8 further comprising a power transmission unit electrically connected to the at least one power transmission coil to supply power to the at least one power transmission coil
  • the rectifying/smoothing unit includes a control unit configured to instruct the power transmission unit to supply or stop power depending on the power stored in the at least one power storage unit.
  • Each of the rectification/smoothing section and the power transmission section includes a communication section, The communication section of the rectification/smoothing section and the communication section of the power transmission section are connected by wireless communication or optical fiber communication, An instruction signal instructing to supply the power or stop the power is transmitted from the communication unit of the rectification/smoothing unit to the communication unit of the power transmission unit by the wireless communication or the optical fiber communication.
  • E12 a ground frame surrounding the substrate support along with the plasma processing chamber; an RF filter having a characteristic of suppressing propagation of the high frequency power and connected between the at least one power receiving coil and the rectifying/smoothing section; further comprising; The rectifying/smoothing section and the at least one power storage section are arranged in a space surrounded by the ground frame.
  • E14 The plasma processing apparatus according to E13, further comprising an RF filter having a characteristic of suppressing propagation of the high frequency power and configured to suppress propagation of the high frequency power to the at least one power transmission coil.
  • the at least one power storage unit is arranged in a space surrounded by the ground frame,
  • the rectifying/smoothing section is arranged outside the space surrounded by the ground frame.
  • E16 further comprising a ground frame surrounding the substrate support along with the plasma processing chamber;
  • the at least one power storage unit is arranged in a space surrounded by the ground frame,
  • the rectifying/smoothing section is arranged outside the space surrounded by the ground frame.
  • E17 The plasma processing apparatus according to E16, further comprising an RF filter having a characteristic of suppressing propagation of the high-frequency power and connected between the rectifying/smoothing section and the at least one power receiving coil.
  • the at least one power transmitting coil together with a first capacitor connected to one end thereof and a second capacitor connected to the other end thereof, transmits power between the at least one power transmitting coil and the at least one power receiving coil.
  • a resonant circuit is configured for the power transmission frequency
  • the at least one power receiving coil together with a third capacitor connected to one end thereof and a fourth capacitor connected to the other end thereof, constitutes a resonant circuit with respect to the transmission frequency
  • the plasma processing apparatus further includes an RF filter having a characteristic of suppressing propagation of the high frequency power and connected between the rectifying/smoothing section and the at least one power receiving coil,
  • the RF filter is a first inductor including one end connected to the third capacitor and the other end connected to the rectification/smoothing section; a second inductor including one end connected to the fourth capacitor and the other end connected to the rectification/smoothing section; a fifth capacitor connected between the one end of the first inductor and ground; a sixth capacitor connected between
  • the smoothing circuit has at least one line connected between a positive line that connects the rectifier circuit and the at least one power storage unit to each other and a negative line that connects the rectifier circuit and the at least one power storage unit to each other.
  • the smoothing circuit has a ratio of an amplitude of an output voltage of the smoothing circuit to an amplitude of an output voltage of the rectifier circuit of 3% or less, and a cutoff frequency of the smoothing circuit is set to be equal to that of the at least one power transmission coil. It is configured such that the value divided by twice the transmission frequency of the power transmitted between at least one power receiving coil is 1/10 or less,
  • the plasma processing apparatus according to any one of E7 to E10.
  • At least one voltage control connected between the at least one power storage unit and the at least one power consumption member, and configured to control application of voltage to the at least one power consumption member and stoppage thereof.
  • the plasma processing apparatus according to any one of E1 to E6, further comprising: a part.
  • At least one voltage control connected between the at least one power storage unit and the at least one power consumption member, and configured to control application of voltage to the at least one power consumption member and stoppage thereof.
  • the plasma processing apparatus according to any one of E7 to E20, further comprising:
  • E23 Further comprising a pulse generation unit configured to generate a synchronous pulse signal synchronized with power transmitted between the at least one power transmission coil and the at least one power reception coil from the output voltage of the rectifier circuit,
  • the at least one voltage control unit is configured to adjust timings of applying and stopping voltage to the at least one power consuming member based on the synchronization pulse signal.
  • the at least one voltage controlled converter comprises: a voltage detector configured to detect a voltage between the pair of outputs; a drive circuit configured to switch between voltage output and shutdown of the voltage controlled converter; a control unit configured to control the drive circuit to stop voltage output of the at least one voltage-controlled converter when the value of the voltage detected by the voltage detector is equal to or higher than a threshold;
  • the plasma processing apparatus according to E24 or E25, comprising:
  • the at least one voltage-controlled converter includes a plurality of voltage-controlled converters connected in parallel between the at least one voltage control unit and the at least one power storage unit, according to any one of E24 to E26. Plasma processing equipment.
  • the at least one power consuming member includes a first power consuming member and a second power consuming member;
  • the at least one power storage unit includes a first power storage unit connected to a first power consumption member and a second power storage unit connected to the second power consumption member, the second power consumption member includes a sensor;
  • the second power consumption member is configured to receive power from the second power storage unit when an abnormality occurs in the plasma processing apparatus.
  • the plasma processing apparatus according to any one of E1 to E27.
  • the at least one power transmission coil includes a plurality of power transmission coils
  • the at least one power receiving coil includes a plurality of power receiving coils each electromagnetically coupled to the plurality of power transmitting coils.
  • the plurality of power transmission coils are connected in series or in parallel, The plurality of power receiving coils are connected in series or in parallel, The plasma processing apparatus described in E29.
  • SYMBOLS 1... Plasma processing apparatus, 10... Chamber, 11... Substrate support part, 110... Ground frame, 120... Power transmission part, 130... Power transmission coil part, 140... Power reception coil part, 150... Rectification/smoothing part, 160... Power storage part, 170... Voltage control converter, 180... Constant voltage control section, 240... Power consumption member, 300... High frequency power supply.

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