KR20250028375A - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

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Publication number
KR20250028375A
KR20250028375A KR1020257001713A KR20257001713A KR20250028375A KR 20250028375 A KR20250028375 A KR 20250028375A KR 1020257001713 A KR1020257001713 A KR 1020257001713A KR 20257001713 A KR20257001713 A KR 20257001713A KR 20250028375 A KR20250028375 A KR 20250028375A
Authority
KR
South Korea
Prior art keywords
unit
plasma processing
power
capacitor
processing device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257001713A
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English (en)
Korean (ko)
Inventor
노조무 나가시마
다이스케 요시코시
구니히코 야마가타
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20250028375A publication Critical patent/KR20250028375A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/10—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/90—Regulation of charging or discharging current or voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
KR1020257001713A 2022-06-29 2023-02-15 플라즈마 처리 장치 Pending KR20250028375A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263356713P 2022-06-29 2022-06-29
US63/356,713 2022-06-29
PCT/JP2023/005254 WO2024004256A1 (ja) 2022-06-29 2023-02-15 プラズマ処理装置

Publications (1)

Publication Number Publication Date
KR20250028375A true KR20250028375A (ko) 2025-02-28

Family

ID=89381866

Family Applications (5)

Application Number Title Priority Date Filing Date
KR1020257001713A Pending KR20250028375A (ko) 2022-06-29 2023-02-15 플라즈마 처리 장치
KR1020257001731A Pending KR20250029135A (ko) 2022-06-29 2023-05-11 플라즈마 처리 장치
KR1020257001799A Pending KR20250029138A (ko) 2022-06-29 2023-05-11 플라즈마 처리 장치
KR1020257001716A Pending KR20250029884A (ko) 2022-06-29 2023-05-23 플라즈마 처리 장치 및 축전량의 제어 방법
KR1020257001714A Pending KR20250033227A (ko) 2022-06-29 2023-05-31 플라즈마 처리 장치

Family Applications After (4)

Application Number Title Priority Date Filing Date
KR1020257001731A Pending KR20250029135A (ko) 2022-06-29 2023-05-11 플라즈마 처리 장치
KR1020257001799A Pending KR20250029138A (ko) 2022-06-29 2023-05-11 플라즈마 처리 장치
KR1020257001716A Pending KR20250029884A (ko) 2022-06-29 2023-05-23 플라즈마 처리 장치 및 축전량의 제어 방법
KR1020257001714A Pending KR20250033227A (ko) 2022-06-29 2023-05-31 플라즈마 처리 장치

Country Status (6)

Country Link
US (5) US20250132130A1 (https=)
JP (5) JPWO2024004256A1 (https=)
KR (5) KR20250028375A (https=)
CN (5) CN119404597A (https=)
TW (5) TW202408318A (https=)
WO (5) WO2024004256A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250299937A1 (en) * 2024-03-25 2025-09-25 Applied Materials, Inc. Cryogenic moisture trap for improved etch and particle reduction

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015173027A (ja) 2014-03-11 2015-10-01 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4286404B2 (ja) * 1999-10-15 2009-07-01 東京エレクトロン株式会社 整合器およびプラズマ処理装置
WO2013088640A1 (ja) * 2011-12-14 2013-06-20 パナソニック株式会社 非接触コネクタ装置及びシステム
JP6257071B2 (ja) * 2012-09-12 2018-01-10 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP2014176155A (ja) * 2013-03-07 2014-09-22 Hitachi Maxell Ltd 非接触電力伝送装置及び非接触電力伝送方法
WO2016129638A1 (ja) * 2015-02-10 2016-08-18 株式会社ＥｘＨ 電力供給システム
JP2017054646A (ja) * 2015-09-08 2017-03-16 株式会社ダイヘン 高周波電源装置、当該高周波電源装置を備えているプラズマ処理システムおよび非接触給電システム
WO2019182260A1 (ko) * 2018-03-23 2019-09-26 홍잉 인라인 박막 프로세싱 장치
JP7224165B2 (ja) * 2018-12-14 2023-02-17 キヤノントッキ株式会社 アライメント装置、蒸着装置、および、電子デバイスの製造装置
WO2021211269A1 (en) * 2020-04-14 2021-10-21 Lam Research Corporation Transformer isolator having rf shield structure for effective magnetic power transfer
KR102378573B1 (ko) * 2020-06-12 2022-03-23 한양대학교 산학협력단 플라즈마 생성기
WO2023008448A1 (ja) * 2021-07-30 2023-02-02 東京エレクトロン株式会社 プラズマ処理システム及びプラズマ処理方法
JPWO2024070848A1 (https=) * 2022-09-30 2024-04-04
WO2025126436A1 (ja) * 2023-12-14 2025-06-19 東京エレクトロン株式会社 プラズマ処理装置
WO2025126437A1 (ja) * 2023-12-14 2025-06-19 東京エレクトロン株式会社 プラズマ処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015173027A (ja) 2014-03-11 2015-10-01 東京エレクトロン株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
CN119404599A (zh) 2025-02-07
US20250149307A1 (en) 2025-05-08
US20250132130A1 (en) 2025-04-24
US20250149308A1 (en) 2025-05-08
KR20250029138A (ko) 2025-03-04
TW202408319A (zh) 2024-02-16
WO2024004400A1 (ja) 2024-01-04
KR20250029884A (ko) 2025-03-05
JPWO2024004399A1 (https=) 2024-01-04
CN119404597A (zh) 2025-02-07
US20250149297A1 (en) 2025-05-08
JPWO2024004497A1 (https=) 2024-01-04
CN119404596A (zh) 2025-02-07
CN119452735A (zh) 2025-02-14
TW202416340A (zh) 2024-04-16
JPWO2024004256A1 (https=) 2024-01-04
TW202408320A (zh) 2024-02-16
TW202420378A (zh) 2024-05-16
JPWO2024004400A1 (https=) 2024-01-04
JPWO2024004444A1 (https=) 2024-01-04
CN119404598A (zh) 2025-02-07
WO2024004444A1 (ja) 2024-01-04
WO2024004399A1 (ja) 2024-01-04
WO2024004497A1 (ja) 2024-01-04
KR20250033227A (ko) 2025-03-07
KR20250029135A (ko) 2025-03-04
US20250149298A1 (en) 2025-05-08
TW202408318A (zh) 2024-02-16
WO2024004256A1 (ja) 2024-01-04

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PA0105 International application

Patent event date: 20250117

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application