WO2023279590A1 - 一种igbt封装散热结构及其应用的电机控制器 - Google Patents
一种igbt封装散热结构及其应用的电机控制器 Download PDFInfo
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- WO2023279590A1 WO2023279590A1 PCT/CN2021/127341 CN2021127341W WO2023279590A1 WO 2023279590 A1 WO2023279590 A1 WO 2023279590A1 CN 2021127341 W CN2021127341 W CN 2021127341W WO 2023279590 A1 WO2023279590 A1 WO 2023279590A1
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 98
- 229910000679 solder Inorganic materials 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000001816 cooling Methods 0.000 claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 18
- 238000004806 packaging method and process Methods 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 239000002352 surface water Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C249/00—Preparation of compounds containing nitrogen atoms doubly-bound to a carbon skeleton
- C07C249/02—Preparation of compounds containing nitrogen atoms doubly-bound to a carbon skeleton of compounds containing imino groups
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
- C07C251/02—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups
- C07C251/30—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having nitrogen atoms of imino groups quaternised
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D401/00—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom
- C07D401/02—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings
- C07D401/04—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings directly linked by a ring-member-to-ring-member bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
Definitions
- the invention relates to IGBT heat dissipation technology, in particular to an IGBT package heat dissipation structure and a motor controller for its application.
- IGBT is the core device of energy conversion and transmission, and it is widely used in rail transit, smart grid, aerospace, electric vehicles and new energy equipment. Due to the large current and high power density carried by the IGBT device in the circuit, a good heat dissipation capability is required to ensure the normal operation of the IGBT. The heat dissipation of IGBT is very important, and poor heat dissipation will seriously affect the service life of IGBT. Due to the late start of IGBT research in my country, the heat dissipation performance cannot be optimal in the current packaging structure design.
- the object of the present invention is: provide a kind of IGBT encapsulation cooling structure and the motor controller of its application, the technical problem that solves:
- An IGBT package heat dissipation structure including a heat dissipation substrate main body and heat dissipation fins and electrodes fixed on both sides of the heat dissipation fin; the heat dissipation fin has an inner cavity structure, and the wafer, the first DBC layer, and the second DBC layer are placed in the inner cavity ; The electrodes pass through the main body of the heat dissipation substrate, and are respectively connected to the wafer through the first DBC layer and the second DBC layer in the inner cavity of the heat dissipation fin.
- the left and right surfaces of the wafer are respectively connected to the right copper clad layer of the first DBC layer and the left copper clad layer of the second DBC layer through the second solder layer and the third solder layer.
- the electrodes are respectively connected to the copper clad layer on the right surface of the first DBC layer and the copper clad layer on the left surface of the second DBC layer to complete the input and output of current.
- the copper clad layer on the left surface of the first DBC layer and the copper clad layer on the right surface of the second DBC layer are respectively connected to the left and right inner cavity surfaces of the cooling fins through the first solder layer and the fourth solder layer.
- the main body of the heat dissipation substrate is provided with an insulating shell at a position corresponding to the inner cavity of the heat dissipation fin, and the electrodes enter the inner cavity of the heat dissipation fin through the insulating shell.
- the cavity of the heat dissipation fin is filled with heat dissipation material.
- the internal cavity of the heat dissipation fin is one of a U-shaped cavity with a closed bottom, a U-shaped cavity, and a trapezoidal cavity.
- the bottom of the heat dissipation fin cavity is not closed.
- a motor controller comprising a main housing and its internal film capacitors, a PCB board, a three-phase output module, an IGBT module, and a DC bus passing through the main housing;
- the IGBT module uses the IGBT package for heat dissipation Structure, multiple IGBT package heat dissipation structures share a heat dissipation substrate body.
- a cooling channel is provided in the main housing, and the cooling fins of the IGBT module are placed in the cooling channel.
- the IGBT package heat dissipation structure proposed by the present invention combines the IGBT package shell and the heat dissipation water channel fins into one, rationally utilizes the space, reduces the package volume, and facilitates the miniaturization design of the motor controller;
- the IGBT package heat dissipation structure proposed by the present invention can realize multi-surface water cooling and heat dissipation, with large heat dissipation area, high heat dissipation efficiency and good effect;
- Figure 1 is a schematic diagram of the overall structure of the motor controller
- Figure 2 is a schematic diagram of the structure of the motor controller after removing the PCB board
- Fig. 3 is a structural schematic diagram of the heat dissipation system of the motor controller
- Fig. 4 is a schematic diagram of the structure of the IGBT module
- Fig. 5 is a structural schematic diagram of another angle of the IGBT module
- Fig. 6 is a cross-sectional view of the structure of the IGBT module
- FIG. 7 is a top view of one side of the electrode of the IGBT module structure
- Figure 8 is an enlarged view of the heat dissipation structure of the IGBT package.
- the motor controller includes a main housing 1, a bus input 2, a film capacitor 3, a PCB board 4, a three-phase output 5, and an IGBT module 6 and other structures.
- the working current of the entire motor controller enters the inside of the film capacitor 3 from the bus input 2, and then enters the input electrode of the IGBT module 6 through the PCB board 4, and then connects the three-phase output 5 from the IGBT output electrode through the PCB board 4, and then enters the inside of the motor to drive the motor to work .
- the principle of the heat dissipation system of the motor controller is: the coolant enters the water channel from the water inlet 11 of the main casing 1, and then contacts the heat dissipation fins 612 of the IGBT module 6, and the crystal element inside the heat dissipation fins The heat is dissipated around the periphery, and finally enters the vehicle cooling circulation system through the water outlet 12 of the main housing 1 .
- the heat dissipation structure can realize multi-faceted heat dissipation of the IGBT wafer, greatly improving heat dissipation efficiency.
- the heat dissipation structure of the IGBT package includes a heat dissipation substrate body 611 and heat dissipation fins 612 and electrodes 65 respectively fixed on both sides thereof; the heat dissipation fins 612 have an inner cavity structure, and the wafer is placed in the inner cavity 64.
- the copper clad layer on the left surface of the first DBC layer 631 and the copper clad layer on the right surface of the second DBC layer 632 pass through the second solder layer 622, the fourth solder layer 624 and the left and right inner cavity surfaces of the heat dissipation fins 612 respectively. connect.
- the heat dissipation substrate main body 611 is provided with an insulating shell 66 at a position corresponding to the inner cavity of the heat dissipation fin 612 , and the insulating shell 66 serves as a support for the electrode 65 while ensuring insulation from the heat dissipation substrate main body 611 .
- the electrode 65 passes through the insulating shell 66 and enters the cavity of the cooling fin 612 .
- the lower ends of the electrodes 65 are respectively connected to the copper clad layer on the right surface of the first DBC layer 631 and the copper clad layer on the left surface of the second DBC layer 632 to complete the input and output of current with the wafer 64 .
- the cavity of the heat dissipation fin 612 is filled with thermal silica gel or other heat dissipation materials to enhance the heat dissipation effect of the IGBT module.
- the heat dissipation fins 612 of this embodiment are not limited to those shown in FIG. 8.
- the bottom of the cavity may also not be closed.
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
- Inverter Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
本发明公开了一种IGBT封装散热结构及其应用的电机控制器,IGBT封装散热结构包括散热基板主体及分别固定于其两侧的散热翅片、电极;散热翅片带有内腔结构,内腔中放置晶元、第一DBC层、第二DBC层;所述晶元左、右两侧表面分别通过第二焊料层、第三焊料层与第一DBC层的右表面覆铜层、第二DBC层的左表面覆铜层连接。所述电极分别与第一DBC层的右表面覆铜层、第二DBC层的左表面覆铜层连接。所述第一DBC层的左表面覆铜层、第二DBC层的右表面覆铜层分别通过第一焊料层、第四焊料层与散热翅片的左、右内腔表面连接。本发明的IGBT封装散热结构,将IGBT的封装外壳与散热水道翅片合二为一,降低封装体积,实现多面水冷散热,解决了高度集成后控制器IGBT散热问题。
Description
本发明涉及IGBT散热技术,特别涉及一种IGBT封装散热结构及其应用的电机控制器。
IGBT是能源变换与传输的核心器件,在轨道交通、智能电网、航空航天、电动汽车与新能源装备等领域应用极广。由于IGBT器件在电路中承载的电流大,功率密度高,因此需要很好的散热能力,才能保证IGBT正常工作。IGBT的散热非常重要,散热不好会严重影响IGBT的使用寿命。由于我国对IGBT研究起步晚,目前的封装结构设计中,散热性能不能达到最佳。因此,在现有电机控制器产品功率密度要求越来越高,急需开发结构简单且散热性能好的IGBT封装散热结构。由于IGBT在电力电子装置上的重要作用,对于IGBT的散热要求来越来越高。
现有IGBT封装结构多将晶元水平布置在大的基板平面上,封装体积大;散热依赖于底部散热板,散热效率低,效果差。
发明内容
本发明目的是:提供一种IGBT封装散热结构及其应用的电机控制器,解决的技术问题:
1、将IGBT的封装外壳与散热水道翅片合二为一,合理利用空间,降低封装体积;
2、实现多面水冷散热,提高散热面积及散热效率;
3、解决高度集成后控制器系统IGBT散热问题,提升系统的功率密度。
本发明的技术方案是:
一种IGBT封装散热结构,包括散热基板主体及分别固定于其两侧的散热翅片、电极;散热翅片带有内腔结构,内腔中放置晶元、第一DBC层、第二DBC层;电极穿过散热基板主体,在散热翅片内腔中分别通过第一DBC层、第二DBC层与晶元接通。
优选的,所述晶元左、右两侧表面分别通过第二焊料层、第三焊料层与第一DBC层的右表面覆铜层、第二DBC层的左表面覆铜层连接。
优选的,所述电极分别与第一DBC层的右表面覆铜层、第二DBC层的左表面覆铜层连接,完成电流的输入输出。
优选的,所述第一DBC层的左表面覆铜层、第二DBC层的右表面覆铜层分别通过第一焊料层、第四焊料层与散热翅片的左、右内腔表面连接。
优选的,所述散热基板主体在对应散热翅片内腔位置设置有绝缘外壳,电极穿过绝缘外壳进入散热翅片内腔。
优选的,所述散热翅片内腔的空隙填充有散热材料。
优选的,所述散热翅片内腔为底部封闭的U型腔、凵型腔、梯型腔中的一种。
优选的,所述散热翅片内腔的底部不封闭。
一种电机控制器,包括主壳体及其内部的薄膜电容、PCB板、三相输出模块、IGBT模块,还包括穿过主壳体的直流母线;所述IGBT模块采用所述的IGBT封装散热结构,多个IGBT封装散热结构共用一个散热基板主体。
优选的,主壳体内设置有散热水道,IGBT模块的散热翅片置于散热水道中。
本发明的优点是:
1、本发明提出的IGBT封装散热结构,将IGBT的封装外壳与散热水道翅片合二为一,合理利用空间,降低封装体积,利于电机控制器小型化设计;
2、本发明提出的IGBT封装散热结构可以实现多面水冷散热,散热面积大,散热效率高,效果好;
3、本发明技术的应用于电机控制器,解决了高度集成后控制器系统IGBT散热问题,极大提升了系统的功率密度。
下面结合附图及实施例对本发明作进一步描述:
图1为电机控制器整体结构示意图;
图2为电机控制器拆除PCB板后的结构示意图;
图3为电机控制器散热系统结构示意图;
图4为IGBT模块结构示意图;
图5为IGBT模块另一角度结构示意图;
图6为IGBT模块结构剖面图;
图7为IGBT模块结构电极一侧的俯视图;
图8为IGBT封装散热结构放大图。
实施例1
如图1、2所示,电机控制器包括主壳体1,母线输入2,薄膜电容3,PCB板4,三相输出5,IGBT模块6等结构。整个电机控制器工作电流从母线输入2进入薄膜电容3内部,再通过PCB板4进入IGBT模块6输入电极,后从IGBT输出电极通过PCB板4连接三相输出5,进而进入电机内部驱动电机工作。
如图3所示,电机控制器的散热系统原理是:冷却液从主壳体1的进水口11进入水道内部,后与IGBT模块6的散热翅片612接触,对散热翅片内部的晶元周边进行散热,最后通过主壳体1出水口12进入整车冷却循环系统。该散热结构可以实现对IGBT晶元多面散热,极大提高散热效率。
实施例2
如图4-8所示,IGBT封装散热结构,包括散热基板主体611及分别固定于其两侧的散热翅片612、电极65;散热翅片612带有内腔结构,内腔中放置晶元64、第一DBC层631、第二DBC层632;所述晶元64左、右两侧表面分别通过第二焊料层622、第三焊料层623与第一DBC层631的右表面覆铜层、第二DBC层632的左表面覆铜层连接。所述第一DBC层631的左表面覆铜层、第二DBC层632的右表面覆铜层分别通过第二焊料层622、第四焊料层624与散热翅片612的左、右内腔表面连接。
所述散热基板主体611在对应散热翅片612内腔位置设置有绝缘外壳66,绝缘外壳66作为电极65支撑件,同时保障与散热基板主体611之间的绝缘。电极65穿过绝缘外壳66进入散热翅片612内腔。所述电极65下端分别与第一DBC层631的右表面覆铜层、第二DBC层632的左表面覆铜层连接,完成与晶元64电流的输入输出。所述散热翅片612内腔的空隙填充有导热硅胶或其他散热材料,以增强IGBT模块的散热效果。
本实施例的所述散热翅片612不局限于图8所示,例如在图8中,散热翅片612的内腔底部封闭的凵型腔,还可以为U型腔或梯型腔,内腔的底部也可以不封闭。
上述实施例只为说明本发明的技术构思及特点,其目的在于让熟悉此项技术的人能够了解本发明的内容并据以实施,并不能以此限制本发明的保护范围。凡根据本发明主要技术方案的精神实质所做的修饰,都应涵盖在本发明的保护范围之内。
Claims (10)
- 一种IGBT封装散热结构,其特征在于,包括散热基板主体(611)及分别固定于其两侧的散热翅片(612)、电极(65);散热翅片(612)带有内腔结构,内腔中放置晶元(64)、第一DBC层(631)、第二DBC层(632);电极(65)穿过散热基板主体(611),在散热翅片(612)内腔中分别通过第一DBC层(631)、第二DBC层(632)与晶元(64)接通。
- 根据权利要求1所述的IGBT封装散热结构,其特征在于,所述晶元(64)左、右两侧表面分别通过第二焊料层(622)、第三焊料层(623)与第一DBC层(631)的右表面覆铜层、第二DBC层(632)的左表面覆铜层连接。
- 根据权利要求2所述的IGBT封装散热结构,其特征在于,所述电极(65)分别与第一DBC层(631)的右表面覆铜层、第二DBC层(632)的左表面覆铜层连接,完成电流的输入输出。
- 根据权利要求3所述的IGBT封装散热结构,其特征在于,所述第一DBC层(631)的左表面覆铜层、第二DBC层(632)的右表面覆铜层分别通过第二焊料层(622)、第四焊料层(624)与散热翅片(612)的左、右内腔表面连接。
- 根据权利要求3所述的IGBT封装散热结构,其特征在于,所述散热基板主体(611)在对应散热翅片(612)内腔位置设置有绝缘外壳(66),电极(65)穿过绝缘外壳(66)进入散热翅片(612)内腔。
- 根据权利要求5所述的IGBT封装散热结构,其特征在于,所述散热翅片(612)内腔的空隙填充有散热材料。
- 根据权利要求1-6任一项所述的IGBT封装散热结构,其特征在于,所述散热翅片(612)内腔为底部封闭的U型腔、凵型腔、梯型腔中的一种。
- 根据权利要求1-6任一项所述的IGBT封装散热结构,其特征在于,所述散热翅片(612)内腔的底部不封闭。
- 一种电机控制器,包括主壳体(1)及其内部的薄膜电容(3)、PCB板(4)、三相输出模块(5)、IGBT模块(6),还包括穿过主壳体(1)的直流母线(2);其特征在于,所述IGBT模块(6)采用权利要求1-6任一项所述的IGBT封装散热结构,多个IGBT封装散热结构共用一个散热基板主体(611)。
- 根据权利要求9所述的一种电机控制器,其特征在于,主壳体(1)内设置有散热水道,IGBT模块(6)的散热翅片(612)置于散热水道中。
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