WO2023238783A1 - Unité de composant électronique - Google Patents

Unité de composant électronique Download PDF

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Publication number
WO2023238783A1
WO2023238783A1 PCT/JP2023/020582 JP2023020582W WO2023238783A1 WO 2023238783 A1 WO2023238783 A1 WO 2023238783A1 JP 2023020582 W JP2023020582 W JP 2023020582W WO 2023238783 A1 WO2023238783 A1 WO 2023238783A1
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WO
WIPO (PCT)
Prior art keywords
shield layer
case
electronic component
type
component unit
Prior art date
Application number
PCT/JP2023/020582
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English (en)
Japanese (ja)
Inventor
彰一 齋藤
弘利 青木
彰夫 門馬
市朗 熊倉
明 喜多村
天祐 伊達
Original Assignee
株式会社タムラ製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社タムラ製作所 filed Critical 株式会社タムラ製作所
Publication of WO2023238783A1 publication Critical patent/WO2023238783A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G—PHYSICS
    • G12—INSTRUMENT DETAILS
    • G12B—CONSTRUCTIONAL DETAILS OF INSTRUMENTS, OR COMPARABLE DETAILS OF OTHER APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G12B17/00—Screening
    • G12B17/02—Screening from electric or magnetic fields, e.g. radio waves
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields

Definitions

  • the present invention relates to an electronic component unit having electronic components.
  • Patent Document 1 discloses a current detector.
  • the four sides of the central space are covered with shield members.
  • a novel structure is desired for such electronic component units such as current detectors.
  • an object of the present invention is to provide a technology that can realize a novel structure.
  • the present invention employs the following solving means to solve the above problems.
  • the following solutions and the words in parentheses are merely examples, and the present invention is not limited thereto.
  • the present invention can be an invention that includes at least one of each invention specific matter shown in the following solution means.
  • each invention specifying matter shown in the solution below can be made into a lower concept by adding elements that limit the invention specifying matter, or it can be made into a higher concept by deleting the elements that limit the invention specifying matter. .
  • the electronic component unit of the present solution includes an electronic component, a case for storing the electronic component inside, and a conductive shield layer disposed on a part of the inner surface of the case.
  • the case includes a first annular member having an opening in the center, a second member formed upright on the outer periphery of the first member, and a second member formed upright on the inner periphery of the first member.
  • a third member a conductor can be placed inside the third member, and the shield layer has a first surface on the inside of the first member and a third surface on the outside of the third member.
  • the electronic component unit is arranged on at least one surface of the electronic component unit, and is not arranged on a second surface inside the second member.
  • the electronic component unit of the present solution has the following configuration.
  • Electronic components are electronic elements necessary for electronic component units.
  • the electronic components are, for example, cores, substrates, and the like.
  • the case may or may not be partially open.
  • One or more electronic components are housed inside the case.
  • a conductive shield layer is arranged on a part of the inner surface of the case.
  • the inner surface of the case is a surface other than the outer surface of the outermost member of the members constituting the case. Therefore, among the members constituting the case, the surfaces facing the outside of the members disposed inside the case are also the inner surfaces of the case.
  • the case includes a first annular member having an opening in the center, a second member formed upright on the outer periphery of the first member, and a third member formed upright on the inner periphery of the first member. It is equipped with a member.
  • the case may include members other than the first to third members.
  • a conductor can be placed inside the third member. The conductor may be disposed at least partially inside the third member, and may be disposed protruding from the opening of the first member.
  • a conductor is a member through which current flows, such as wiring or a bus bar.
  • a conductor is a member that acts on electronic components (effects by an electric field). Electronic components can measure the current flowing through a conductor.
  • the shield layer is arranged on at least one of the inner first surface of the first member and the outer third surface of the third member, and the shield layer is arranged on the inner second surface of the second member. It has not been. That is, the shield layer is arranged only on the first surface, only on the third surface, or on the first and third surfaces, but not on the second surface.
  • the shield layer is placed on the first and third surfaces, but the shield layer is not placed on the second side, so the shield layer is placed on the entire inner surface of the case. Compared to this, manufacturing costs can be reduced by limiting the arrangement of the shield layer.
  • the shield layer is placed on the first and third surfaces where the shield layer's effectiveness is more likely to be exhibited, while the shield layer is placed on the second side where the effect of the shield layer is reduced. Therefore, the dV/dt characteristics (output characteristics) of the electronic component unit can be efficiently improved.
  • the electronic component unit of the present solution is an electronic component unit according to any of the above solutions, characterized in that the shield layer is disposed on the first surface and the third surface. be.
  • the shield layer is arranged on both the first surface and the third surface.
  • the shield layer is arranged on both the first surface and the third surface.
  • the shield layer is arranged on the first surface and the third surface, so that the first surface is more likely to exhibit the effect of the shield layer, and the third surface is more likely to exhibit the effect of the shield layer. Accordingly, the effect of the shield layer can be synergistically improved.
  • the electronic component unit of the present solution is an electronic component unit according to any of the above solutions, characterized in that the shield layer is formed of carbon paste or metal paste.
  • the shield layer is formed of carbon paste or metal paste (coating material).
  • the shield layer may be a single layer, a plurality of layers, or a layer formed by layering carbon paste and metal paste.
  • the shield layer is formed of paste, the shield layer can be formed by coating, making it easy to manufacture and reducing costs.
  • the electronic component unit of the present solution is an electronic component unit according to any of the above-mentioned solutions, characterized in that the shield layer is grounded.
  • the shield layer is grounded.
  • the shield layer may be grounded by being connected to the ground of the substrate, or may be grounded by being connected to another ground.
  • FIG. 1 is a diagram showing a first type of case 10.
  • FIG. 1 is a diagram showing a first type of case 10.
  • FIG. 3 is a diagram showing a second type of case 10.
  • FIG. 3 is a diagram showing a second type of case 10.
  • FIG. It is a figure which shows the case 10 of a 3rd type. It is a figure which shows the case 10 of a 3rd type. It is a figure which shows the case 10 of a 4th type. It is a figure which shows the case 10 of a 4th type. It is a figure which shows the verification result of the current sensor using the case without a shield layer.
  • FIG. 3 is a diagram showing a list of verification results.
  • FIG. 1 is a perspective view showing a current sensor 100 of this embodiment.
  • FIG. 2 is an exploded perspective view showing the current sensor 100 of this embodiment.
  • the current sensor 100 is a sensor for measuring current, and includes a case 10, a core 20 (electronic component), and a substrate 30 (electronic component).
  • the case 10 is a box-shaped member that houses the core 20 and the substrate 30 therein, and has a through hole formed in the center.
  • the periphery of the through hole in the case 10 is open on the front side in the figure, and is not open on the back side in the figure.
  • a primary conductor (bus bar BU) can be placed in the through hole of the case 10.
  • the primary conductor may be placed at the center of the through hole of the case 10, may be placed at a position shifted from the center, or a plurality of primary conductors may be placed.
  • a core 20 is housed in the case 10 (case storage space), and a substrate 30 is housed so as to overlap the core 20.
  • the case 10 includes an annular first member 11 having an opening 40 (see FIG. 3) in the center, a second member 12 formed upright on the outer periphery of the first member 11, and a second member 12 formed on the inner periphery of the first member 11. and a third member 13 formed in an upright manner.
  • Core 20 is a laminated core.
  • the core 20 is capable of converging a magnetic field generated by conduction of a primary current in a state where a primary conductor (bus bar BU; see FIG. 1) is inserted inside the core 20 .
  • An air gap 21 is formed in the core 20 at least at one location in the circumferential direction.
  • a magnetic detection element magnetic sensing element, magnetoelectric transducer, etc.
  • Hall element 31 is arranged within the air gap 21, and the Hall element 31 outputs a detection signal according to the magnetic field intensity converged by the core 20. do.
  • the board 30 has a horizontal U-shape to match the shape of the storage space of the case 10.
  • a current detection circuit is formed on the substrate 30 by mounting not only the Hall element 31 but also various components, IC chips, etc. (not shown). The current detection circuit amplifies the voltage signal output from the Hall element 31, performs various electrical processing, and outputs a detected voltage.
  • An external connector 32 is mounted on the substrate 30, and the external connector 32 is arranged to protrude from the case 10 when the current sensor 100 is assembled.
  • the current sensor 100 can supply power to an output circuit through the external connector 32 and can output a detected voltage from a current detection circuit.
  • the influence of such noise on the output signal can be suppressed by grounding the core 20 to the ground (GND) of the current detection circuit.
  • the reason for this is that by grounding the core 20, most of the noise components are absorbed by the ground side, making it difficult for them to be conducted to the current detection circuit.
  • the core 20 is grounded to the ground of the current detection circuit through a plate-shaped nickel terminal 33 bonded to the surface (outer peripheral surface) of the core 20.
  • a shield layer is disposed in the current sensor 100 in order to improve the dV/dt characteristics.
  • the dV/dt characteristic may be improved by this shield layer, by grounding the core 20 as described above, or by a combination of both measures.
  • the shield layer is a layer that is arranged on a part of the inner surface of the case 10 and has conductivity.
  • the dV/dt characteristic as described above, is the characteristic of noise due to electric field coupling between the primary conductor (bus bar BU) and the current detection circuit (sensor circuit, ASIC, etc.).
  • the shield layer is arranged by applying carbon paste to the inner surface of the case 10.
  • the shield layer can be grounded by contacting the ground of the current detection circuit with a metal pin or the like. Note that the ground of the current detection circuit can be connected to the ground terminal of the power supply (Vcc power supply).
  • the location where the shield layer is placed can vary depending on the location and performance of electronic components inside the current sensor 100, the size and shape of the case 10, and the location and performance of the primary conductor. That is, the position at which the carbon paste is applied can be determined in consideration of the position at which the primary conductor is arranged. In the case of a through-type current sensor like the present embodiment, it is preferable to arrange it at a specific location inside the case where it can easily be coupled to the primary conductor. In this embodiment, among the four types shown below, any type other than the first type, that is, any one of the second to fourth types can be adopted. Each type will be explained in turn below.
  • FIG. 3 is a diagram showing the first type of case 10, with FIG. 3A showing a perspective view and FIG. 3B showing a front view.
  • the shield layer 50 is disposed on the inner second surface 12a of the second member 12 of the case 10 (in the figure, the member forming the side surface (periphery) of the case 10).
  • the first type is not adopted.
  • FIG. 4 is a diagram showing the second type of case 10, with FIG. 4A showing a perspective view and FIG. 4B showing a front view.
  • a shield layer 50 is arranged on the outer third surface 13a of the third member 13 (the member forming the through hole) of the case 10. According to the second type, the influence from the primary conductor (bus bar BU) placed at the center of the case 10 can be reduced.
  • FIG. 5 is a diagram showing the third type of case 10, with FIG. 5A showing a perspective view and FIG. 5B showing a front view.
  • a shield layer 50 is arranged on the inner first surface 11a of the first member 11 (in the figure, the member forming the bottom surface) of the case 10. According to the third type, the influence from the bottom side of the case 10 can be reduced.
  • FIG. 6 is a diagram showing a fourth type of case 10, with FIG. 6A showing a perspective view and FIG. 6B showing a front view.
  • the fourth type is a combination of the second type and the third type, in which a shield layer 50 is arranged on the first surface 11a and the third surface 13a of the case 10. According to the fourth type, the influence from the primary conductor (bus bar) placed at the center of the case 10 and the influence from the bottom side of the case 10 can be reduced.
  • the shield layer 50 may be arranged on at least a portion of each of the first surface 11a and the third surface 13a.
  • the shield layer 50 is arranged on at least one of the first surface 11a and the third surface 13a, and is not arranged on the second surface 12a. Note that the shield layer 50 is not arranged on the outer surface of the second member 12 either.
  • FIG. 7 is a diagram showing the verification results of a current sensor using a case without a shield layer. Verification involves applying an input voltage to the primary conductor and checking how the output voltage changes (hereinafter, the same applies to FIGS. 8 to 11).
  • (A) in the figure shows the input voltage input to the primary conductor
  • (B) in the figure shows the output voltage detected by the current sensor (this point is also noted in Figs. 8 to 11). similar).
  • the substrate and the core are grounded
  • FIGS. 8 to 11 the substrate and the shield layer are grounded.
  • (A) in FIG. 7 The waveform of the input voltage changes significantly at three locations (left, middle, and right) in the figure.
  • (B) in FIG. 7 In this case, the waveform of the output voltage also changes significantly at three locations, similar to the waveform of the input voltage.
  • the amount of malfunction (the amount of malfunction in dV/dt) was "888 mVp-p.”
  • the amount of malfunction indicates the disturbance in the waveform of the output voltage. The more the waveform is disturbed (the larger the value of the amount of malfunction), the worse the dV/dt characteristics become; the closer the waveform approaches a straight line (the smaller the value of the amount of malfunction), the worse the ), the dV/dt characteristics improve.
  • the amount of malfunction is "888 mVp-p", which is the reference value. Therefore, if the value becomes smaller than "888 mVp-p", the dV/dt characteristic is improved, and if the value becomes larger than "888mVp-p", the dV/dt characteristic deteriorates.
  • FIG. 8 is a diagram showing the verification results of the current sensor using the first type case.
  • A in FIG. 8: The waveform of the input voltage changes significantly at three locations in the figure.
  • B in FIG. 8: In this case, the waveform of the output voltage also changes significantly at three locations, similar to the waveform of the input voltage.
  • the amount of malfunction was "1040 mVp-p". In the case of the first type, the amount of malfunction is larger than the reference value of "888 mVp-p.” Therefore, in this embodiment, the first type of case is not adopted.
  • FIG. 9 is a diagram showing the verification results of the current sensor using the second type case.
  • A in FIG. 9: The waveform of the input voltage changes significantly at three locations in the figure.
  • B in FIG. 9: In this case, the waveform of the output voltage also changes at three locations along with the change in the waveform of the input voltage, but does not change as greatly as in FIG. 7(B).
  • the amount of malfunction was "168 mVp-p".
  • the amount of malfunction is smaller than the reference value of "888 mVp-p.” Therefore, in this embodiment, the second type of case can be adopted.
  • FIG. 10 is a diagram showing the verification results of the current sensor using the third type case.
  • A in FIG. 10: The waveform of the input voltage changes significantly at three locations in the figure.
  • B in FIG. 10: In this case, the waveform of the output voltage also changes at three locations along with the change in the waveform of the input voltage, and although it changes more than in FIG. 9(B), It has not changed as much as (B).
  • the amount of malfunction was "424 mVp-p".
  • the amount of malfunction is smaller than the reference value of "888 mVp-p.” Therefore, in this embodiment, the third type of case can be adopted.
  • FIG. 11 is a diagram showing the verification results of the current sensor using the fourth type case.
  • A in FIG. 11: The waveform of the input voltage changes significantly at three locations in the figure.
  • B in FIG. 11: In this case, the waveform of the output voltage is different from the waveform of the input voltage and hardly changes.
  • the amount of malfunction was "96 mVp-p".
  • the amount of malfunction is smaller than the reference value of "888 mVp-p.” Therefore, in this embodiment, the fourth type of case can be adopted.
  • FIG. 12 is a diagram showing a list of verification results.
  • the amount of malfunction is "888 mVp-p" (see FIG. 7).
  • the amount of malfunction is "1040 mVp-p" (see FIG. 8).
  • the amount of malfunction is "168 mVp-p” (see FIG. 9).
  • the amount of malfunction is "424 mVp-p” (see FIG. 10).
  • the amount of malfunction is "96 mVp-p" (see FIG. 11).
  • the location where the shield layer 50 of the second type case (FIG. 4) is arranged has better characteristics because the coupling with the primary conductor can be better shielded.
  • a fourth type case (FIG. 6) which is a combination of the second type and the third type, the shielding characteristics are improved and the dV/dt characteristics are further improved.
  • the present embodiment employs a case in which the shield layer 50 is placed (coated with carbon paste) in a location where coupling with the primary conductor can be easily shielded. Furthermore, in the through-type current sensor 100 such as the present embodiment, the dV/dt characteristics may be improved or deteriorated depending on the location where the shield layer 50 is placed. The location where the layer 50 is placed is the most dominant location (the location where the shield layer functions most effectively).
  • the present embodiment has the following effects.
  • the shield layer 50 is arranged on the first surface 11a and the third surface 13a, but the shield layer 50 is not arranged on the second surface 12a, so that the inner surface of the case 10 Compared to a method of arranging a shield layer over the entire area, manufacturing costs can be reduced by limiting the arrangement of the shield layer 50.
  • the shield layer 50 is arranged on the first surface 11a and the third surface 13a where the effect of the shield layer 50 is likely to be exhibited, while on the second surface 12a where the effect of the shield layer 50 is reduced. Since the shield layer 50 is not arranged, the dV/dt characteristics (output characteristics) of the current sensor 100 can be efficiently improved.
  • the overall current sensor performance can be improved.
  • the idea that manufacturing costs can be reduced while improving dV/dt characteristics is an idea that has not existed in the past, and the structure of this embodiment, which realizes such an idea, This is a new structure that does not exist.
  • the shield layer 50 is disposed on the first surface 11a and the third surface 13a, the effect of the shield layer 50 is easily exerted on the first surface 11a and the shield layer 50 is disposed on the first surface 11a and the third surface 13a.
  • the effect of the shield layer 50 can be synergistically improved by the third surface 13a where the effect is more likely to be exhibited.
  • by selecting two orthogonal surfaces (the first surface 11a and the third surface 13a) instead of simply selecting two surfaces influences from various directions can be shielded.
  • the shield layer 50 is formed of paste, the shield layer 50 can be formed by coating, making it easy to manufacture and reducing costs.
  • the current sensor 100 of this embodiment is a current sensor in which carbon paste is applied inside the case 10.
  • Conventional current sensors have a metal plate placed inside the case and connected to the ground (GND) to improve the dV/dt characteristics, or a core inside the case is connected to the ground to improve the dV/dt characteristics. It was improving.
  • the core in the case of a ferrite core, it cannot be connected to ground.
  • the core in the case of a silicon steel plate core, the core can be connected to the ground, but since the core is coated with insulating varnish, it is difficult to make a connection, which may cause soldering defects, or the core may be connected to the ground.
  • the metal is connected to the core using laser processing, resistance welding, etc., and then connected to the ground, which makes the configuration complicated.
  • the core has a predetermined shape solely for collecting magnetic flux, and is not shaped to improve the dV/dt characteristics.
  • the metal plate is connected to ground, and the core is also connected to ground, it is necessary to connect both the metal plate and the core to ground.
  • using metal plates increases weight.
  • a conductive shield layer (a layer coated with carbon paste) on the inner surface of the case, weight and cost reductions are achieved, and the shield layer can be formed where necessary. It is said that Since the shield layer is formed of paste, it can be constructed at a lower cost than a metal shield (vacuum film formation such as evaporation or sputtering). Further, good connection to the shield layer inside the case can be obtained by simply making contact with a metal pin or the like.
  • the present invention is not limited to the embodiments described above, and can be implemented with various modifications.
  • Electronic component units have been explained using the example of a current sensor, but electronic component units other than current sensors (e.g., gate drivers, power supply modules, LED drivers, transformers, reactors, personal digital assistants, mobile phones, chargers, etc.) ).
  • the shield layer When the shield layer is grounded, the core can also be grounded. Further, the shield layer does not need to be grounded.
  • the electronic component unit may be a filled product or an unfilled product (unfilled product).
  • the filled product is one in which the inside of the storage space of the case is filled with sealing resin or the like.
  • An unfilled product is one in which the inside of the storage space of the case is not filled with sealing resin or the like.
  • the sealing resin is an insulator and has a dielectric constant, so electric field concentration occurs, and the amount of dV/dt malfunction may be larger than that of a "non-filled product”. .
  • the shield layer of the embodiment described above even a filled product can be made into a product with sufficient quality.
  • the shield layer may be a metal film (metal layer) formed by plating, sputtering, vapor deposition, or the like.
  • the electronic component unit may include not only a shield layer but also an insulating layer (insulating paste).
  • the material constituting the shield layer may not only be applied to the inner surface of the case, but may also be mixed into the case.
  • the shield layer may be formed of metal paste.
  • the nickel terminal 33 does not have to be mounted.
  • the shape of the case 10 and the thickness of the shield layer 50 can be changed arbitrarily. Looking at each surface of the case 10 individually, the shield layer 50 on the third surface 13a contributes the most to improving the dV/dt characteristics (the second type in FIG. 4), followed by the shield layer 50 on the first surface 11a. contributes (the third type in Figure 5).
  • the area of the shield layer 50 on the third surface 13a" ⁇ "the area of the shield layer 50 on the first surface 11a” can be satisfied.
  • the shielding effect of the third surface 13a can be improved. Note that as the area of the shield layer 50 increases, the shielding effect improves.
  • the Hall element 31 may be replaced with an element that detects a magnetic field and varies its output, such as a GMR (Giant Magneto Resistive) element or a TMR (Tunnel Magneto Resistance) element.
  • a GMR Gate Magneto Resistive
  • TMR Tunnelnel Magneto Resistance
  • the present invention provides a technology that can realize a new structure regarding an electronic component unit having electronic components.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Details Of Measuring And Other Instruments (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)

Abstract

L'invention concerne une technologie qui permet de réaliser une nouvelle structure.　Une couche de protection 50 est disposée sur une première surface 11a ou une troisième surface 13a du boîtier 10 d'un composant électronique (capteur de courant), tandis que la couche de protection 50 n'est pas disposée sur une deuxième surface 12a. Ainsi, par rapport à un procédé consistant à disposer la couche de protection sur toute la surface intérieure du boîtier 10, le coût de fabrication peut être réduit en limitant la disposition de la couche de protection 50. En outre, la couche de protection 50 est disposée sur la première surface 11a ou la troisième surface 13a, sur lesquelles l'effet de la couche de protection 50 s'exerce facilement, tandis que la couche de protection 50 n'est pas disposée sur la deuxième surface 12a, sur laquelle l'effet de la couche de protection 50 est réduit. Ainsi, il est possible d'améliorer efficacement les caractéristiques dV/dt (caractéristiques de sortie) du composant électronique (capteur de courant).
PCT/JP2023/020582 2022-06-08 2023-06-02 Unité de composant électronique WO2023238783A1 (fr)

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JP2022093014A JP2023179994A (ja) 2022-06-08 2022-06-08 電子部品ユニット
JP2022-093014 2022-06-08

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0462482A (ja) * 1990-06-30 1992-02-27 Akutasu Power Drive Kk 電流検出器
JP2020085676A (ja) * 2018-11-27 2020-06-04 株式会社タムラ製作所 電流検出器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0462482A (ja) * 1990-06-30 1992-02-27 Akutasu Power Drive Kk 電流検出器
JP2020085676A (ja) * 2018-11-27 2020-06-04 株式会社タムラ製作所 電流検出器

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